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| Number | Title | Issue Date |
| 8152954 | Showerhead electrode assemblies and plasma processing chambers incorporating the same The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal con... | 04/10/2012 |
| 8142606 | Apparatus for depositing a uniform silicon film and methods for manufacturing the same Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell appl... | 03/27/2012 |
| 8110068 | Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes Systems, system components, and methods for plasma stripping are provided. In an embodiment, a gas flow distribution receptacle may have a rounded section that includes an inner surface defining a reception cavity, an outer surface forming an enclosed end, and a cen... | 02/07/2012 |
| 8070910 | Shower head structure and treating device A shower head structure characterized by comprising a shower head section, opposed to the upper surface of a mounting table in an evacuable treating vessel, for injecting a processing gas into the treating vessel; a temperature observation through-hole which opens i... | 12/06/2011 |
| 8043470 | Electrode/probe assemblies and plasma processing chambers incorporating the same The present invention relates generally to plasma processing chambers and electrode assemblies used therein. According to one embodiment, an electrode assembly comprises a thermal control plate, a silicon-based showerhead electrode, and a probe assembly comprising a... | 10/25/2011 |
| 8038835 | Processing device, electrode, electrode plate, and processing method A processing gas fed from a gas feed pipe (8) through a gas introducing port (9) flows first into an outer annular gas flow channel (20a), where it is circumferentially diffused, and then into an inner annular gas flow channel (20 | 10/18/2011 |
| 8016975 | Etching system An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etchi... | 09/13/2011 |
| 7988813 | Dynamic control of process chemistry for improved within-substrate process uniformity A method and system for dynamically controlling a process chemistry above a substrate is described. The system for adjusting the process chemistry comprises a ring configured to surround a peripheral edge of a substrate in a vacuum processing system. The ring compri... | 08/02/2011 |
| 7922864 | Quick-change precursor manifold for large-area CVD and PECVD A tube-array showerhead for CVD or PECVD on large substrates delivers precursors to a process chamber via an array of tubes drilled with precision holes. The tubes rapidly become contaminated with use and must be changed frequently to maintain process quality. An im... | 04/12/2011 |
| 7922863 | Apparatus for integrated gas and radiation delivery An apparatus for photo-assisted or photo-induced processes is disclosed, comprising a process chamber having an integrated gas and radiation distribution plate. In one embodiment, the plate has one set of apertures for distributing one or more process gases, and ano... | 04/12/2011 |
| 7887670 | Gas introducing mechanism and processing apparatus for processing object to be processed The present invention provides a gas introducing mechanism and a processing apparatus for processing an object to be processed, which can supply a gas uniformly over the whole region of a processing space so as to enhance uniformity of a process in the surface of th... | 02/15/2011 |
| 7879183 | Apparatus and method for front side protection during backside cleaning Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substr... | 02/01/2011 |
| 7862682 | Showerhead electrode assemblies for plasma processing apparatuses Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to ... | 01/04/2011 |
| 7854820 | Upper electrode backing member with particle reducing features Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, t... | 12/21/2010 |
| 7811409 | Bare aluminum baffles for resist stripping chambers Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide laye... | 10/12/2010 |
| 7803246 | Etching system An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etchi... | 09/28/2010 |
| 7776178 | Suspension for showerhead in process chamber Stress within a suspension wall for suspending a showerhead in a process chamber is ameliorated by one or more of: (1) Openings in the suspension wall that reduce exposure of the suspension wall to process gas or ambient atmosphere when the chamber lid is opened. (2... | 08/17/2010 |
| 7744720 | Suppressor of hollow cathode discharge in a shower head fluid distribution system A chamber component configured to be coupled to a process chamber and a method of fabricating the chamber component is described. The chamber component comprises a chamber element comprising a first surface on a supply side of the chamber element and a second surfac... | 06/29/2010 |
| 7713378 | Ozone processing device A substrate ozone processing device includes: a substrate-carrying/heating platform; above the platform, a gas supply head made up of a main head unit bored with platform-directed vent holes, gas conduits connected at their basal ends to the gas vent holes and separ... | 05/11/2010 |
| 7708859 | Gas distribution system having fast gas switching capabilities A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching se... | 05/04/2010 |
| 7674352 | System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from... | 03/09/2010 |
| 7651584 | Processing apparatus A shower head structure (26) includes a shower head main body (78) of a one-piece structure formed in a generally cup shape and having a bottom wall (78A) provided with a plurality of gas injection holes (30A, 30B) formed therein a... | 01/26/2010 |
| 7641762 | Gas sealing skirt for suspended showerhead in process chamber Stress within a suspension wall for suspending a showerhead in a process chamber is ameliorated by one or more of: (1) A gas sealing skirt that helps protect the suspension wall from direct contact with process gas. The gas sealing skirt is connected to either the c... | 01/05/2010 |
| 7641761 | Apparatus and method for forming thin film using surface-treated shower plate A plasma CVD apparatus includes a showerhead comprised of a body having a hollow structure. The shower plate is detachably integrated with the body at a peripheral surface of the body and a peripheral surface of the shower plate, and at least one of the peripheral s... | 01/05/2010 |
| 7494560 | Non-plasma reaction apparatus and method An apparatus and method for forming a self-limiting etchable layer on a workpiece. The apparatus comprises: a chamber adapted for holding a workpiece; a distribution plate within the chamber, wherein the distribution plate includes channels for introducing a first f... | 02/24/2009 |
| 7431859 | Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation A plasma etch process includes injecting process gases with different compositions of chemical species through different radial gas injection zones of an overhead electrode to establish a desired distribution of chemical species among the plural gas injection zones.... | 10/07/2008 |
| 7431772 | Gas distributor having directed gas flow and cleaning method A gas distributor distributes a gas across a surface of a substrate processing chamber. The gas distributor has a hub, a baffle extending radially outward from the hub, a first set of vanes and a second set of vanes. In one version, the hub has a gas inlet and a gas... | 10/07/2008 |
| 7416635 | Gas supply member and plasma processing apparatus A gas supply member is disposed in a chamber of a plasma processing apparatus and has a planar surface facing an inner space of the chamber and a plurality of gas holes bored in the planar surface to supply a gas through the gas holes to the inner space. An outer pe... | 08/26/2008 |
| 7396415 | Apparatus and methods for isolating chemical vapor reactions at a substrate surface An apparatus and method for processing a substrate is provided. The apparatus comprises a reaction chamber, a substrate holder within the chamber, and first and second injector components. The reaction chamber has an upstream end and a downstream end, between which ... | 07/08/2008 |
| 7387685 | Apparatus and method for depositing materials onto microelectronic workpieces Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reactio... | 06/17/2008 |
| 7381274 | Gas valve assembly and apparatus using the same A gas valve assembly for a deposition apparatus includes: a driving shaft including a plurality of gas supply paths therein; a housing surrounding the driving shaft and including a plurality of through holes therein; a plurality of magnetic seal pairs between the dr... | 06/03/2008 |
| 7381943 | Neutral particle beam processing apparatus The present invention relates to a neutral particle beam processing apparatus. More specifically, the present invention relates to a neutral particle beam processing apparatus comprising a plasma discharging space inside which processing gases are converted to plasm... | 06/03/2008 |
| 7361228 | Showerheads for providing a gas to a substrate and apparatus Showerheads including a plate having a plurality of gas outlet holes extending therethrough and a head cover coupled to the plate to form a space between the plate and the head cover. A gas supply inlet member is configured to provide gas to the space directed towar... | 04/22/2008 |
| 7361287 | Method for etching structures in an etching body by means of a plasma A method is proposed for etching structures into an etching body, in particular, recesses which are laterally precisely defined by an etching mask, into a silicon body, using a plasma. In the process, a high-frequency pulsed, low-frequency modulated high-frequency p... | 04/22/2008 |
| 7358484 | Hyperthermal neutral beam source and method of operating Method and system for pumping a hyperthermal neutral beam source is described. The pumping system enables use of the hyperthermal neutral beam source for semiconductor processing applications, such as etching processes. An embodiment is described having a neutral be... | 04/15/2008 |
| 7347900 | Chemical vapor deposition apparatus and method A chemical vapor deposition (CVD) apparatus includes a process chamber where a deposition process is performed on a wafer. A gas supply assembly is mounted in the process chamber for supplying a process gas to the process chamber, and a vacuum pump is mounted in the... | 03/25/2008 |
| 7338901 | Method of preparing a film layer-by-layer using plasma enhanced atomic layer deposition A method for forming a thin film on a substrate layer by layer using plasma enhanced atomic layer deposition is described. The method comprises using a low power reduction step for at least one cycle in order to substantially avoid partial layer film growth, followe... | 03/04/2008 |
| 7331307 | Thermally sprayed member, electrode and plasma processing apparatus using the electrode A thermally sprayed member or an electrode includes a basic material, a thermally sprayed film formed on the surface of the basic material, the thermally sprayed film being made of an insulating ceramic and a metallic intermediate layer provided between the basic ma... | 02/19/2008 |
| 7332039 | Plasma processing apparatus and method thereof A nozzle head NH of a plasma processing apparatus comprises an annular inner holder 3, an annular inner electrode 11 surrounding this holder 3, an annular outer electrode 21 surrounding this electrode 11, and an annular outer holde... | 02/19/2008 |
| RE40046 | Processing system A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly(ether imide) resin or the like. Eac... | 02/12/2008 |
