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| Number | Title | Issue Date |
| 8123902 | Gas flow diffuser A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a chamber body having an interior volume, a substrate support disposed in the interior volume and a gas distrib... | 02/28/2012 |
| 8097120 | Process tuning gas injection from the substrate edge Broadly speaking, the embodiments of the present invention provides an improved plasma processing mechanism, apparatus, and method to increase the process uniformity at the very edge of the substrate. In one embodiment, a plasma processing chamber comprises a substr... | 01/17/2012 |
| 8092640 | Plasma processing apparatus and semiconductor device manufactured by the same apparatus A plasma processing apparatus of this invention includes a sealable chamber, a gas supply source of reactive material gas, placed outside the chamber, a gas introduction pipe connected to the gas supply source, for introducing the material gas into the chamber, and ... | 01/10/2012 |
| 8088248 | Gas switching section including valves having different flow coefficients for gas distribution system A gas switching system for a gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus, is provided. The chamber can include multiple zones, and the gas switching section can s... | 01/03/2012 |
| 8075731 | Substrate processing apparatus and a substrate processing method A gas injection head 200 is provided above a substantial center of a substrate W. Nitrogen gas introduced from a gas feed port 291 is injected from a slit-shaped injection port 293 via an internal buffer space BF. In this way, a radial gas flow ... | 12/13/2011 |
| 8021514 | Remote plasma source for pre-treatment of substrates prior to deposition A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a... | 09/20/2011 |
| 7976671 | Mask etch plasma reactor with variable process gas distribution A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an ext... | 07/12/2011 |
| 7879182 | Shower plate, plasma processing apparatus, and product manufacturing method A system for processing a substrate uniformly by increasing the number of gas discharge holes being arranged per unit area of a shower plate as receding from the center of the shower plate or increasing the radii of the gas discharge holes as receding from the cente... | 02/01/2011 |
| 7846292 | Gas injector and apparatus including the same A gas injector includes: a plate including at least one first injection hole; and at least one nozzle module combined with the plate, the at least one nozzle module including at least one second injection hole connected to the at least one first injection hole. ... | 12/07/2010 |
| 7722737 | Gas distribution system for improved transient phase deposition Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a g... | 05/25/2010 |
| 7585384 | Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width ... | 09/08/2009 |
| 7510624 | Self-cooling gas delivery apparatus under high vacuum for high density plasma applications A gas distributor for use in a semiconductor processing chamber is provided. The gas distributor comprises a gas inlet, a gas outlet, and a stem section having a spiral thread. The gas distributor further comprises a body having a gas deflecting surface that extends... | 03/31/2009 |
| 7488400 | Apparatus for etching wafer by single-wafer process An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas t... | 02/10/2009 |
| 7476291 | High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation A vacuum chamber for passivation and/or stripping a photoresist layer formed on a semiconductor substrate. The chamber includes an internal chamber body that forms a cavity to surround the substrate and has a plurality of gas passages extending therethrough to the c... | 01/13/2009 |
| 7430986 | Plasma confinement ring assemblies having reduced polymer deposition characteristics Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes ... | 10/07/2008 |
| 7431772 | Gas distributor having directed gas flow and cleaning method A gas distributor distributes a gas across a surface of a substrate processing chamber. The gas distributor has a hub, a baffle extending radially outward from the hub, a first set of vanes and a second set of vanes. In one version, the hub has a gas inlet and a gas... | 10/07/2008 |
| 7422635 | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces The present disclosure suggests several systems and methods for batch processing of microfeature workpieces, e.g., semiconductor wafers or the like. One exemplary implementation provides a method of depositing a reaction product on each of a batch of workpieces posi... | 09/09/2008 |
| 7416635 | Gas supply member and plasma processing apparatus A gas supply member is disposed in a chamber of a plasma processing apparatus and has a planar surface facing an inner space of the chamber and a plurality of gas holes bored in the planar surface to supply a gas through the gas holes to the inner space. An outer pe... | 08/26/2008 |
| 7413639 | Energy and media connection for a coating installation comprising several chambers The invention relates to an energy and media connection module for coating installations. Said module serves for supplying with cooling water, compressed air, process gases, signal, control and cathode power. It can be moved from one coating chamber to another coati... | 08/19/2008 |
| 7413627 | Deposition chamber and method for depositing low dielectric constant films An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is deliver... | 08/19/2008 |
| 7396415 | Apparatus and methods for isolating chemical vapor reactions at a substrate surface An apparatus and method for processing a substrate is provided. The apparatus comprises a reaction chamber, a substrate holder within the chamber, and first and second injector components. The reaction chamber has an upstream end and a downstream end, between which ... | 07/08/2008 |
| 7396431 | Plasma processing system for treating a substrate A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a proces... | 07/08/2008 |
| 7390366 | Apparatus for chemical vapor deposition An apparatus for CVD is disclosed. Processing gas is injected to an upper center portion of a wafer supporting member by a gas focus ring installed at an inner side surface of a reaction chamber. The processing gas is prevented from coming down to a lower space of t... | 06/24/2008 |
| 7387685 | Apparatus and method for depositing materials onto microelectronic workpieces Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reactio... | 06/17/2008 |
| 7381274 | Gas valve assembly and apparatus using the same A gas valve assembly for a deposition apparatus includes: a driving shaft including a plurality of gas supply paths therein; a housing surrounding the driving shaft and including a plurality of through holes therein; a plurality of magnetic seal pairs between the dr... | 06/03/2008 |
| 7371332 | Uniform etch system Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, wher... | 05/13/2008 |
| 7361228 | Showerheads for providing a gas to a substrate and apparatus Showerheads including a plate having a plurality of gas outlet holes extending therethrough and a head cover coupled to the plate to form a space between the plate and the head cover. A gas supply inlet member is configured to provide gas to the space directed towar... | 04/22/2008 |
| 7351449 | Chemical vapor deposition methods for making powders and coatings, and coatings made using these methods Flame produced vapors for combustion chemical vapor deposition are redirected from the direction of the flame by differential atmospheric pressure, such as positive pressure provided by a blower or negative pressure provided by a vacuum. This allows, for example, lo... | 04/01/2008 |
| 7347900 | Chemical vapor deposition apparatus and method A chemical vapor deposition (CVD) apparatus includes a process chamber where a deposition process is performed on a wafer. A gas supply assembly is mounted in the process chamber for supplying a process gas to the process chamber, and a vacuum pump is mounted in the... | 03/25/2008 |
| 7332039 | Plasma processing apparatus and method thereof A nozzle head NH of a plasma processing apparatus comprises an annular inner holder 3, an annular inner electrode 11 surrounding this holder 3, an annular outer electrode 21 surrounding this electrode 11, and an annular outer holde... | 02/19/2008 |
| 7332038 | Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is heated with a high frequency and is formed of inertly coated graphite; a g... | 02/19/2008 |
| 7331307 | Thermally sprayed member, electrode and plasma processing apparatus using the electrode A thermally sprayed member or an electrode includes a basic material, a thermally sprayed film formed on the surface of the basic material, the thermally sprayed film being made of an insulating ceramic and a metallic intermediate layer provided between the basic ma... | 02/19/2008 |
| 7323080 | Apparatus for treating substrate The present is directed to an apparatus for etching the top edge and bottom of a wafer. The apparatus includes a substrate support part for supporting a wafer and a movable protect part for preventing fluid for an etch from flowing into a non-etch portion of the waf... | 01/29/2008 |
| 7318869 | Variable gas conductance control for a process chamber A deposition system in accordance with one embodiment of the present invention includes a process chamber, a stationary pedestal for supporting a substrate in the process chamber, and a moveable shield forming at least a portion of an enclosure defining the process ... | 01/15/2008 |
| 7314526 | Reaction chamber for an epitaxial reactor Reaction chamer (10) for an epitaxial reactor comprising a belljar (14) made of insulating, transparent and chemically resistant material, a susceptor (24) provided with disk-shaped cavities (34a-n) for receiving wafers (... | 01/01/2008 |
| 7314527 | Reactor system A gas delivery system for delivering a gas to a reactor. The reactor has a reactor chamber, a gas inlet port, and a gas exhaust port. The gas delivery system included a torch chamber having an outer wall extending along a first axis. A torch injector extends into th... | 01/01/2008 |
| 7312415 | Plasma method with high input power A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside... | 12/25/2007 |
| 7312163 | Atomic layer deposition methods, and methods of forming materials over semiconductor substrates The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a material over at least a portion of a substrate, and in which at least... | 12/25/2007 |
| 7306829 | RF plasma reactor having a distribution chamber with at least one grid A plasma reactor has a reactor vessel and a pair of electrodes in the form of spaced apart and oppositely disposed metallic surfaces defining therebetween a plasma discharge space. At least one of the metallic surfaces is the surface of a metallic plate having a plu... | 12/11/2007 |
| 7306707 | Adaptable processing element for a processing system and a method of making the same The present invention presents an adaptable processing element for use in a processing system having multiple configurations. The processing element comprises a primary component and at least one detachable component, wherein the at least one detachable component ca... | 12/11/2007 |
