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| Number | Title | Issue Date |
| 8038833 | Plasma processing apparatus In a plasma processing apparatus, a member for propagating high frequency from a high frequency power supply and/or to which the high frequency is applied. A power feed rod is electromagnetically shielded between a matching unit and a bottom plate of a chamber by a ... | 10/18/2011 |
| 8012305 | Exhaust assembly for a plasma processing system An exhaust assembly is described for use in a plasma processing system, whereby secondary plasma is formed in the exhaust assembly between the processing space and chamber exhaust ports in order to reduce plasma leakage to a vacuum pumping system, or improve the uni... | 09/06/2011 |
| 8002945 | Method of plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in synchronism with the transient. ... | 08/23/2011 |
| 7993487 | Plasma processing apparatus and method of measuring amount of radio-frequency current in plasma In the present invention, two coil-shaped probes each detecting the intensity of a magnetic field in a direction around a center axis of a processing space are provided in a process vessel of a plasma processing apparatus. Each of the probes detects an induced elect... | 08/09/2011 |
| 7967944 | Method of plasma load impedance tuning by modulation of an unmatched low power RF generator A workpiece is processed in a plasma reactor chamber using stabilization RF power delivered into the chamber, by determining changes in load impedance from RF parameters sensed at an RF source or bias power generator and resolving the changes in load impedance into ... | 06/28/2011 |
| 7922862 | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply syste... | 04/12/2011 |
| 7883600 | RF supply system and plasma processing apparatus An RF supply system is to be connected to an RF electrode disposed outside or inside a process chamber to assist a plasma process performed in the process chamber. This system includes an RF power supply, a matching unit, and an impedance converter. The RF power sup... | 02/08/2011 |
| 7867355 | Adjustable height PIF probe A plasma probe assembly for use in a plasma processing chamber is provided. A semiconductor probe element with a probe surface at a first end of the semiconductor probe element is provided. An electrical connector is electrically connected to the semiconductor probe... | 01/11/2011 |
| 7862681 | Plasma processing system and method of contolling the same Provided is a plasma processing system comprising: a plasma reactor generating plasma by receiving an input gas; and a radio frequency generator supplying radio frequency. The radio frequency generator supplies radio frequency power for plasma generation to the plas... | 01/04/2011 |
| 7850818 | Method of manufacturing semiconductor device and cleaning apparatus The disclosure concerns a manufacturing method of a semiconductor device includes dry-etching a semiconductor substrate or a structure formed on the semiconductor substrate; supplying a solution onto the semiconductor substrate; measuring a specific resistance or a ... | 12/14/2010 |
| 7767053 | Substrate processing apparatus and substrate processing method To effectively prevent a micro arc causing damage to an apparatus and a substrate, by detecting a generation of the micro arc. A substrate processing apparatus is constituted so as to generate a plasma P, by applying a high frequency power to an electrode 210... | 08/03/2010 |
| 7682480 | Photoresist conditioning with hydrogen ramping A method for etching a feature in an etch layer through a photoresist mask over a substrate is provided. A substrate with an etch layer disposed below a photoresist mask is placed in a process chamber. The photoresist mask is conditioned, wherein the conditioning co... | 03/23/2010 |
| 7520956 | On-wafer monitoring system An on-wafer monitoring system is placed at a position of a substrate to be treated in a plasma treatment device. The on-wafer monitoring system includes various sensors, a data I/O unit for optically inputting/outputting data to/from outside, and an internal power s... | 04/21/2009 |
| 7440859 | Method for determining plasma characteristics Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of a plasma at two different frequencies, and determining at least one characteristic of the plasma u... | 10/21/2008 |
| 7438018 | Confinement ring assembly of plasma processing apparatus A confinement ring assembly of a plasma treatment apparatus includes a cam ring disposed above the process chamber, a plurality of plungers disposed about a process chamber of the apparatus and operated by the cam ring, and a plurality of confinement rings coupled t... | 10/21/2008 |
| 7422511 | Element for detecting the amount of lapping having a resistive film electrically connected to the substrate An element for detecting an amount of lapping of a stacked structure that includes a substrate and a magnetic field detecting sensor is provided. The element comprises: a resistive film that is arranged on a lapping surface of the stacked structure, the resistive fi... | 09/09/2008 |
| 7407433 | Pad characterization tool Tools and methods for in-situ characterizing of a surface of a polishing pad are described. A characterization tool is integrated with polishing tool so that the polishing pad can be monitored in-situ. The characterization tool and the polishing pad can be rotated o... | 08/05/2008 |
| 7408151 | Dynamic biasing of ion optics in a mass spectrometer A device for dynamically biasing an ion optic element, for example, in a mass spectrometer. The device includes a voltage source, a first ion optical element coupled with the voltage source, a second ion optical element resistively coupled with the first ion optical... | 08/05/2008 |
| 7405521 | Multiple frequency plasma processor method and apparatus A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The... | 07/29/2008 |
| 7373259 | Method and apparatus for performing chemical reactions in a plurality of samples A method and apparatus for simultaneously performing chemical reactions and determining molecular transport dynamics on a plurality of samples such as thin film samples. The apparatus of the present invention is capable of containing multiple samples in individual s... | 05/13/2008 |
| 7361287 | Method for etching structures in an etching body by means of a plasma A method is proposed for etching structures into an etching body, in particular, recesses which are laterally precisely defined by an etching mask, into a silicon body, using a plasma. In the process, a high-frequency pulsed, low-frequency modulated high-frequency p... | 04/22/2008 |
| 7359177 | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply a... | 04/15/2008 |
| 7353771 | Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator According to a first aspect, a power supply and a method of providing power for igniting a plasma in a reactive gas generator is provided that includes (i) coupling a series resonant circuit that comprises a resonant inductor and a resonant capacitor between a switc... | 04/08/2008 |
| 7354482 | Film deposition device A film deposition device for depositing a film includes a depositing chamber for depositing the film with plasma. A plasma quantity monitoring device is disposed in the depositing chamber for monitoring a plasma quantity entering the depositing chamber at real time.... | 04/08/2008 |
| 7353141 | Method and system for monitoring component consumption A method for monitoring consumption of a component, including the steps of emitting a radiation beam onto a first area of the component and detecting a portion of the radiation beam that is refracted by the component. A radiation level signal is generated based at l... | 04/01/2008 |
| 7338577 | Inductively coupled plasma processing apparatus having internal linear antenna for large area processing An inductively coupled plasma processing apparatus for a large area processing, the inductively coupled plasma processing apparatus comprising: a reaction chamber; a plurality of linear antennas horizontally arranged at an inner upper portion of the reaction chamber... | 03/04/2008 |
| 7336471 | Charge eliminating mechanism for stage and testing apparatus A charge eliminating mechanism of the invention includes a mechanical switching mechanism (e.g., a POGO pin), and a wiring line so connected as to be able to be electrically connected to the POGO pin. The wiring line can include a resistor. A block holds the POGO pi... | 02/26/2008 |
| 7334477 | Apparatus and methods for the detection of an arc in a plasma processing system In a plasma processing system, a method for detecting an arc event on a substrate in a plasma chamber having a chuck is disclosed. The method includes positioning a substrate on the chuck. The method also includes providing a vibration-sensing arrangement in the pla... | 02/26/2008 |
| 7336209 | Method and device for data transmission A method for serially transmitting data between a first and a second station is provided, the first station unidirectionally transmitting at least two signals to the second station on two signal paths. In this method, a shift register is provided in each station, th... | 02/26/2008 |
| 7320734 | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceil... | 01/22/2008 |
| 7314537 | Method and apparatus for detecting a plasma The present invention presents an improved apparatus and method for monitoring a material processing system, where the material processing system includes a processing tool, test signal source, and a filter/detector. The test signal source providing a first test sig... | 01/01/2008 |
| 7314401 | Methods and systems for conditioning planarizing pads used in planarizing substrates Monitoring the process of planarizing a workpiece, e.g., conditioning a CMP pad, can present some difficulties. Aspects of this invention provide methods and systems for monitoring and/or controlling such a planarization cycle. For example, a control system may moni... | 01/01/2008 |
| 7313451 | Plasma processing method, detecting method of completion of seasoning, plasma processing apparatus and storage medium With analysis data in the prior art, it is difficult to find out if a change regarded as a judgmental standard of the completion of seasoning has come from a change due to the seasoning, namely, change in condition of the interior of a processing container or come f... | 12/25/2007 |
| 7312865 | Method for in situ monitoring of chamber peeling A method for in situ monitoring of particles generated by a reaction by-product film peeling from an interior wall of a reaction chamber of a semiconductor fabrication apparatus to determine reaction chamber condition. The method includes the steps of: exciting the ... | 12/25/2007 |
| 7303462 | Edge bead removal by an electro polishing process A method and apparatus for the removal of a deposited conductive layer along an edge of a substrate using an electrode configured to electro polish a substrate edge are disclosed. The electro polishing of the substrate edge may occur simultaneously during electroche... | 12/04/2007 |
| 7303982 | Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpi... | 12/04/2007 |
| 7301159 | Charged particle beam apparatus and method of forming electrodes having narrow gap therebetween by using the same A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measu... | 11/27/2007 |
| 7300684 | Method and system for coating internal surfaces of prefabricated process piping in the field The coating of internal surfaces of a workpiece is achieved by connecting a bias voltage such that the workpiece functions as a cathode and by connecting an anode at each opening of the workpiece. A source gas is introduced at an entrance opening, while a vacuum sou... | 11/27/2007 |
| 7298091 | Matching network for RF plasma source A compact matching network couples an RF power supply to an RF antenna in a plasma generator. The simple and compact impedance matching network matches the plasma load to the impedance of a coaxial transmission line and the output impedance of an RF amplifier at rad... | 11/20/2007 |
| 7291545 | Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking... | 11/06/2007 |
