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| Number | Title | Issue Date |
| 4235651 | Fabrication of GaAs-GaAlAs solar cells The specification describes an improved III-V compound solar cell structure and fabrication process therefor wherein a P-type layer of gallium aluminum arsenide is epitaxially grown on an N-type gallium arsenide substrate to form a P-type region and a PN ... | 11/25/1980 |
| 4227941 | Shallow-homojunction solar cells Improvements in shallow-homojunction solar cells based upon a plurality of layers of a direct gap semiconductor material such as GaAs, as well as their fabrication, are disclosed. The shallow-homojunction solar cells have a n+ /p/p+ ... | 10/14/1980 |
| 4227943 | Schottky barrier solar cell A solar cell is constructed by coating an n-type conductivity semiconductor with a thin layer of bromine doped, polymeric sulfur-nitride, (SNBr0.4)x. Metal deposits are provided on both materials for making electrical contact to the ... | 10/14/1980 |
| 4213801 | Ohmic contact of N-GaAs to electrical conductive substrates by controlled growth of N-GaAs polycrystalline layers Thin layers of polycrystalline n-type GaAs have been deposited on a conducting substrate such as graphite. These contacted GaAs layers exhibit desirable properties for device applications, i.e., adequate cohesion between the GaAs and the substrate, good e... | 07/22/1980 |
| 4207586 | Semiconductor device having a passivating layer A semiconductor device includes a passivating layer to reduce and stabilize the surface recombination rate. The passivating layer is of polycrystalline semiconductor material and is of the same conductivity type as that of the underlying semiconductor mat... | 06/10/1980 |
| 4197141 | Method for passivating imperfections in semiconductor materials A method of passivating imperfections, such as grain boundaries and/or dislocations, in semiconductor materials is disclosed which comprises selectively passing electrical current along the imperfections by employing the semiconductor material as an elect... | 04/08/1980 |
| 4195305 | Lattice constant grading in the Aly Ga1-y As1-x Sbx alloy system Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration o... | 03/25/1980 |
| 4191593 | Double heterojunction solar cells Photovoltaic cell comprising two heterojunctions between three component semiconductors Ga1-x ALx As with x varying from 0 to 0.9, GaAs, and Ge which have respective bandgaps of 0.66, 1.43 and 2.4 eV, lattice constants matching at 0.... | 03/04/1980 |
| 4179702 | Cascade solar cells A monolithic cascade cell for converting incident radiation, particularly solar radiation, into electrical energy at a high efficiency with at least three layers of semi-conductive Group III-IV material. The top layer is doped into p and n regions with a ... | 12/18/1979 |
| 4179308 | Low cost high efficiency gallium arsenide homojunction solar cell incorporating a layer of indium gallium phosphide A new low cost high efficiency gallium arsenide homojunction solar cell incorporating a passivating surface layer of indium gallium phosphide. The thickness of the indium gallium phosphide layer is selected so that it is transmissive to photons having wav... | 12/18/1979 |
| 4178195 | Semiconductor structure A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the bin... | 12/11/1979 |
| 4165558 | Fabrication of photovoltaic devices by solid phase epitaxy Fabrication of photovoltaic devices by solid phase epitaxy; devices produced by this method consisting of a semiconductor base and a semiconductor junction-forming epitaxial layer. The epitaxial layer grown by solid phase means from a metal-semiconductor ... | 08/28/1979 |
| 4163987 | GaAs-GaAlAs solar cells The specification describes an improved III-V compound solar cell structure and fabrication process therefor wherein a P-type layer of gallium aluminum arsenide is epitaxially grown on an N-type gallium arsenide substrate to form a P-type region and a PN ... | 08/07/1979 |
| 4158577 | High output solar cells A high output solar cell comprises a three-layer semiconductor compound article, the layers being doped in pn1 n2 order in the direction of light travel, the pn1 junction being a homojunction and the n1 n2 | 06/19/1979 |
| 4156310 | High bandgap window layer for gaas solar cells and fabrication process therefor The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of ... | 05/29/1979 |
| 4154625 | Annealing of uncapped compound semiconductor materials by pulsed energy deposition Damaged semiconductor materials are annealed using localized short term energy deposition. In a specific embodiment gallium arsenide damaged during ion implantation is annealed by exposure to short laser pulses.... | 05/15/1979 |
| 4128843 | GaP Directed field UV photodiode A GaP photodiode having a shallow PN junction and an internal directed surface electric field exhibits high quantum efficiency in detecting ultraviolet wavelengths.... | 12/05/1978 |
| 4128733 | Multijunction gallium aluminum arsenide-gallium arsenide-germanium solar cell and process for fabricating same The specification describes a gallium aluminum arsenide-gallium arsenide-germanium solar cell and fabrication process therefor wherein the deposition of a layer of gallium aluminum arsenide establishes a first PN junction in the GaAs of one bandgap energy... | 12/05/1978 |
| 4126930 | Magnesium doping of AlGaAs Aluminum gallium arsenide is used as a transparent, conducting contact layer on the exposed surface of a gallium arsenide photovoltaic cell. Increased conductivity for the high current generated when concentrated solar radiation strikes the cell, is provi... | 11/28/1978 |
| 4122476 | Semiconductor heterostructure A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the bin... | 10/24/1978 |
| 4122407 | Heterostructure junction light emitting or responding or modulating devices Practice of this disclosure reduces the concentration of intrinsic defects heretofore grown into semiconducting materials. Thereby, the operational lifetime is increased of heterostructure junction light emitting or responding or modulating devices which ... | 10/24/1978 |
| 4116717 | Ion implanted eutectic gallium arsenide solar cell An improved gallium arsenide solar cell is provided by ion implanting both the top and bottom of a plural vertical PN junction eutectic gallium arsenide cell body to obtain an electrical drift field, with multiple ion implants progressively larger in dose... | 09/26/1978 |
| 4107723 | High bandgap window layer for GaAs solar cells and fabrication process therefor The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of ... | 08/15/1978 |
| 4104091 | Application of semiconductor diffusants to solar cells by screen printing Diffusants are applied onto semiconductor solar cell substrates using screen printing techniques. The method is applicable to square and rectangular cells and can be used to apply dopants of opposite types to the front and back of the substrate. Then, sim... | 08/01/1978 |
| 4070205 | Aluminum arsenide eutectic gallium arsenide solar cell An improved gallium arsenide solar cell is provided by forming a P+ layer on top of a wafer of plural vertical PN junction eutectic gallium arsenide crystal by liquid phase epitaxial growth of P doped GaAs followed by liquid phase epitaxial growth at Al | 01/24/1978 |
| 4062698 | Photoelectrical converter Photoelectrical conversion cells may be assembled on an electrically conducting heat sink and each may be electrically isolated therefrom by employing insulating substrate material between the photoresponsive region of each cell and the heat sink.... | 12/13/1977 |
| 4053918 | High voltage, high current Schottky barrier solar cell A Schottky barrier solar cell is disclosed, consisting of a layer of wide band gap semiconductor material such as AlGaAs on which a very thin film of semi-transparent metal is deposited to form a Schottky barrier. The layer of the wide band gap semiconduc... | 10/11/1977 |
| 4034396 | Light sensor having good sensitivity to visible light A light sensor includes a body of semiconductor material having an energy gap within the range of between 1.65 eV and 2.0 eV and a main surface. A rectifying junction is formed in the body of semiconductor material at a depth of at most 1.5 microns beneat... | 07/05/1977 |
| 4017332 | Solar cells employing stacked opposite conductivity layers A cell for converting received light energy to electrical energy comprises, in the simplest embodiment, four layers of differing types of semiconductive material stacked so as to form three opposite conductivity junctions. The outer two, "active", junctio... | 04/12/1977 |
| 4016586 | Photovoltaic heterojunction device employing a wide bandgap material as an active layer A semiconductive heterojunction device particularly useful as a photovoltaic device such as a solar cell comprises a heterojunction formed between a first layer of semiconductor material exhibiting one type of electronic conductivity (N or P) and a second... | 04/05/1977 |
| 3995303 | Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector In an infrared photodetection apparatus a photodetector diode is used which comprises a heterojunction of two epitaxial layers of differing compositions of a ternary III-V semiconductive alloy, such that the outer layer will serve as a radiation-admitting... | 11/30/1976 |
| 3993506 | Photovoltaic cell employing lattice matched quaternary passivating layer A photovoltaic cell has an active portion comprising at least one active layer of a IIIA-VA compound having a p-n junction adjacent an upper surface thereof and an overlying epitaxially grown passivating layer of the quaternary alloy AlGaAsP. The passivat... | 11/23/1976 |
| 3993533 | Method for making semiconductors for solar cells The invention relates to a method for producing a desired thin semiconductor film for use in solar cells. The desired semiconductor is grown epitaxially on a second semiconductor film which may be epitaxial on a third semiconductor. The second semiconduct... | 11/23/1976 |
| 3990101 | Solar cell device having two heterojunctions A body of semiconductor material of a solar cell device has a surface a portion of which is exposed to incident solar radiation, and a surface opposite the incident surface. At the incident surface and in the body is a first region having a bandgap energy... | 11/02/1976 |
| 3982265 | Devices containing aluminum-V semiconductor and method for making A high efficiency solar cell having n-type aluminum arsenide grown on a p-type gallium arsenide substrate and protected by a layer of anodic oxide. The aluminum arsenide is deposited by vapor phase epitaxy by reacting high purity arsine, hydrogen chloride... | 09/21/1976 |
| 3976872 | Gallium phosphide photodetector having an as-grown surface and producing an output from radiation having energies of 2.2 eV to 3.8 eV Anomalously large photoresponse to radiation of energies between about 2.8 eV and about 3.8 eV has been observed in certain gallium phosphide photodetectors having an "as-grown" surface. This photoresponse is believed to be due to the low density of recom... | 08/24/1976 |
