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| Number | Title | Issue Date |
| 5320709 | Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution A method for selectively removing oxidized organometallic residues, oxidized organosilicon residues, native oxides, and damaged oxides created in plasma-etching through emersion of plasma-etched silicon wafers in a solution of anhydrous ammonium fluoride ... | 06/14/1994 |
| 5314574 | Surface treatment method and apparatus In order to remove oxides produced as a result of natural oxidation, from a semiconductor wafer, the semiconductor wafer is transported into a preparatory chamber filled with an inert gas via a loading/unloading passage and held by open/close pins of a lo... | 05/24/1994 |
| 5286657 | Single wafer megasonic semiconductor wafer processing system A semiconductor wafer processing system utilizing a specially constructed wet processing chamber for a single wafer and a megasonic, or high frequency, energy dispensing system. The construction of the container causes megasonic energy to become intensifi... | 02/15/1994 |
| 5238500 | Aqueous hydrofluoric and hydrochloric acid vapor processing of semiconductor wafers Disclosed are methods and apparatuses for combined etching and cleaning of semiconductor wafers and the like preferably using hydrofluoric acid (HF), hydrochloric acid (HCl) and water solutions which generate equilibrium vapor mixtures of HF vapor, HCl va... | 08/24/1993 |
| 5232511 | Dynamic semiconductor wafer processing using homogeneous mixed acid vapors Disclosed are methods and apparatuses for combined etching and cleaning of semiconductor wafers and the like using a combined etchant and cleaning agent, particularly hydrofluoric acid (HF) and hydrochloric acid in water mixtures. Homogeneous vapor mixtur... | 08/03/1993 |
| 5223443 | Method for determining wafer cleanliness An embodiment of the present invention is a method for determining the cleanliness of a semiconductor wafer initially deposited with polysilicon, patterned with photoresist, processed, and then having the resist removed under standard conditions. The meth... | 06/29/1993 |
| 5217925 | Apparatus and method for cleaning semiconductor wafers In an apparatus and a method for cleaning semiconductor wafers, an exhaust chamber having a sub-outlet slows down the flow of frozen micro-particles and thus prevents rebounding of the particles toward the wafer. Therefore, dust or the like is kept away f... | 06/08/1993 |
| 5178682 | Method for forming a thin layer on a semiconductor substrate and apparatus therefor A method and apparatus for manufacturing a semiconductor device having a thin layer of material formed on a semiconductor substrate with a much improved interface between them are disclosed. A silicon substrate is heated up to a temperature around 300° C... | 01/12/1993 |
| 5176756 | Method for fabricating a semiconductor device including a step for cleaning a semiconductor substrate A method for fabricating a semiconductor device comprises the steps of cleaning a semiconductor substrate in a cleaning liquid essentially consisted of a mixture of an ammonia water having a composition of 29 percent by weight, a hydrogen peroxide aqueous... | 01/05/1993 |
| 5175124 | Process for fabricating a semiconductor device using re-ionized rinse water A process for fabricating a semiconductor device uses re-ionized water, such as carbonated water, to rinse the device while preventing microcorrosion of metal layers. In one embodiment of the invention, a semiconductor wafer is provided having an overlyin... | 12/29/1992 |
| 5134093 | Method of fabricating a semiconductor device including a protective layer A method of fabricating a semiconductor device is disclosed, which can prevent disconnection failures due to corrosion of aluminum-base alloy lines in the semiconductor device. First, an aluminum-base alloy film containing at least one kind of alloying el... | 07/28/1992 |
| 5089084 | Hydrofluoric acid etcher and cascade rinser An apparatus used to HF gas etch a plurality of integrated circuit wafers within an etch chamber, followed by a de-ionized water cascade rinse in the chamber. On completion of the rinse and removal of the wafer carriers, the apparatus, housing, and supply... | 02/18/1992 |
| 5082518 | Sparger plate for ozone gas diffusion A gas diffusion system for evenly distributing injected gas in a bath including a diffusion sparger plate for spreading and distributing the gas. Gas moves horizontally under the plate, and is relayed upward through a set of gas passages in the plate.... | 01/21/1992 |
| 5024968 | Removal of surface contaminants by irradiation from a high-energy source A method and apparatus for removing surface contaminants from the surface of a substrate by high-energy irradiation is provided. The invention enables removal of surface contaminants without altering of the substrate's underlying molecular structure. The ... | 06/18/1991 |
| 4987008 | Thin film formation method Film formation without damage on the surface of semiconductor can be established by generating active halogen or active hydrogen by a photochemical reaction, cleaning on the surface of the semiconductor by removing oxide formed thereon by means of the act... | 01/22/1991 |
| 4836902 | Method and apparatus for removing coating from substrate In a method and apparatus for plasma stripping a polymer photoresist coating from a semiconductor substrate, ultraviolet radiation generated as a byproduct of plasma generation is absorbed by a baffle placed between a plasma source and the substrate. The ... | 06/06/1989 |
| 4752505 | Pre-metal deposition cleaning for bipolar semiconductors A pre-metal deposition cleaning process for bipolar semiconductors includes a two step boron glass etching procedure: a chemical etchant consisting of DI, H2 SO4, HNO3 and HCl (500:65:325:163) heated to 80 deg. C. followed... | 06/21/1988 |
| 4749440 | Gaseous process and apparatus for removing films from substrates A process for removing at least a portion of a film from a substrate, such as a wafer of silicon or other similar materials, the film on the substrate typically being an oxide film, maintaining the atmosphere embracing the substrate at near room temperatu... | 06/07/1988 |
| 4555303 | Oxidation of material in high pressure oxygen plasma A process is disclosed for removing carbonaceous material from a surface in a high pressure oxygen plasma. A surface, such as a surface of a silicon ribbon, having a layer of carbonaceous material thereon is positioned in a high pressure plasma reaction v... | 11/26/1985 |
| 4292093 | Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces This invention relates to a new method for removing surface impurities from crystalline silicon or germanium articles, such as off-the-shelf p- or n-type wafers to be doped for use as junction devices. The principal contaminants on such wafers are oxygen ... | 09/29/1981 |
| 4075367 | Semiconductor processing of silicon nitride A method of providing improved adherence of photoresist to a silicon nitride layer on a semiconductor wafer by first preparing a heated solution of trichlorophenylsilane, immersing the nitride coated wafer in the trichlorophenylsilane solution, drying and... | 02/21/1978 |
| 3998653 | Method for cleaning semiconductor devices A solution of potassium hydroxide is employed to remove the reaction products of aluminum migrated through silicon-semiconductor material by thermal gradient zone melting processing.... | 12/21/1976 |
| 3992233 | Surface treatment of III-V compound crystals Group III-V compound substrates are heat cleaned under vacuum conditions by heating above their congruent temperature and subjecting the substrate to at least one molecular beam of the material preferentially evaporating from the substrate thereby maintai... | 11/16/1976 |
