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Lawrence Welk, the bandleader who entertained millions of Americans over a generation of broadcasting his TV show, once received a patent: for a music-themed design of an ashtray.
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| Number | Title | Issue Date |
| 4987008 | Thin film formation method Film formation without damage on the surface of semiconductor can be established by generating active halogen or active hydrogen by a photochemical reaction, cleaning on the surface of the semiconductor by removing oxide formed thereon by means of the act... | 01/22/1991 |
| 4836902 | Method and apparatus for removing coating from substrate In a method and apparatus for plasma stripping a polymer photoresist coating from a semiconductor substrate, ultraviolet radiation generated as a byproduct of plasma generation is absorbed by a baffle placed between a plasma source and the substrate. The ... | 06/06/1989 |
| 4752505 | Pre-metal deposition cleaning for bipolar semiconductors A pre-metal deposition cleaning process for bipolar semiconductors includes a two step boron glass etching procedure: a chemical etchant consisting of DI, H2 SO4, HNO3 and HCl (500:65:325:163) heated to 80 deg. C. followed... | 06/21/1988 |
| 4749440 | Gaseous process and apparatus for removing films from substrates A process for removing at least a portion of a film from a substrate, such as a wafer of silicon or other similar materials, the film on the substrate typically being an oxide film, maintaining the atmosphere embracing the substrate at near room temperatu... | 06/07/1988 |
| 4555303 | Oxidation of material in high pressure oxygen plasma A process is disclosed for removing carbonaceous material from a surface in a high pressure oxygen plasma. A surface, such as a surface of a silicon ribbon, having a layer of carbonaceous material thereon is positioned in a high pressure plasma reaction v... | 11/26/1985 |
| 4292093 | Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces This invention relates to a new method for removing surface impurities from crystalline silicon or germanium articles, such as off-the-shelf p- or n-type wafers to be doped for use as junction devices. The principal contaminants on such wafers are oxygen ... | 09/29/1981 |
| 4075367 | Semiconductor processing of silicon nitride A method of providing improved adherence of photoresist to a silicon nitride layer on a semiconductor wafer by first preparing a heated solution of trichlorophenylsilane, immersing the nitride coated wafer in the trichlorophenylsilane solution, drying and... | 02/21/1978 |
| 3998653 | Method for cleaning semiconductor devices A solution of potassium hydroxide is employed to remove the reaction products of aluminum migrated through silicon-semiconductor material by thermal gradient zone melting processing.... | 12/21/1976 |
| 3992233 | Surface treatment of III-V compound crystals Group III-V compound substrates are heat cleaned under vacuum conditions by heating above their congruent temperature and subjecting the substrate to at least one molecular beam of the material preferentially evaporating from the substrate thereby maintai... | 11/16/1976 |
