Did You Know...
...Chester Carlson was a patent agent who tired of having to make multiple copies of patent applications using the only duplication method available at the time: carbon paper. In 1959 he came up with a new copying system and took it to IBM for evaluation. The "experts" at IBM determined potential sales to be only 5,000 units because people wouldn't want to use a bulky machine when they had carbon paper. Carlson's invention was the xerography process, the company founded on the system is Xerox.
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| Number | Title | Issue Date |
| 7439189 | Surface treatment after selective etching The invention concerns a method of treating wafers comprising at least one surface layer of silicon-germanium (SiGe) and a layer of strained silicon beneath the SiGe layer. The strained silicon layer is denuded by a step of selective etching of the SiGe layer by dis... | 10/21/2008 |
| 7434588 | Spin cleaning and drying apparatus and method of spin cleaning and drying The present invention provides a spin cleaning and drying apparatus of single-wafer processing type which cleans a substrate with a cleaning liquid from a rinse nozzle while rotating the substrate and dries the substrate after cleaning while rotating the substrate, ... | 10/14/2008 |
| 7435712 | Alkaline chemistry for post-CMP cleaning This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an alkaline chemistry for the post-CMP cleaning of wafers containing metal, part... | 10/14/2008 |
| 7431040 | Method and apparatus for dispensing a rinse solution on a substrate An apparatus and method for dispensing a rinse solution on a substrate in which the rinse solution is dispensed through one nozzle array substantially near a center of a substrate and is dispensed through a second nozzle array across a radial span of the substrate. ... | 10/07/2008 |
| 7427168 | Developing method and developing unit In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined p... | 09/23/2008 |
| 7422019 | Composition and method for treating a semiconductor substrate The invention relates to a method for cleaning semiconductor surfaces to achieve to removal of all kinds of contamination (particulate, metallic and organic) in one cleaning step. The method employs a cleaning solution for treating semiconductor surfaces which is st... | 09/09/2008 |
| 7422020 | Aluminum incorporation in porous dielectric for improved mechanical properties of patterned dielectric A porous dielectric layer is formed on a substrate. Aluminum is incorporated in the porous dielectric layer with a pattern process using an Aluminum gas precursor. The incorporated Aluminum improves the mechanical properties of the porous dielectric layer. ... | 09/09/2008 |
| 7419914 | Semiconductor device fabrication method A method for fabricating a semiconductor device with a borderless via/wiring structure includes the steps of performing borderless via etching using a resist mask to form a contact hole in an interlevel dielectric layer over a semiconductor substrate so as to expose... | 09/02/2008 |
| 7419614 | Method of etching and cleaning objects A method of etching and cleaning objects contained in a vessel, includes etching the objects by providing etching solution into the vessel, forcing out the etching solution from the vessel by providing pressurized gas into the vessel; cleaning the objects by providi... | 09/02/2008 |
| 7417016 | Composition for the removing of sidewall residues The present invention relates to a composition for the removal of so-called “sidewall residues” from metal surfaces, in particular from aluminium or aluminium-containing surfaces, in particular from aluminium or aluminium-containing surfaces, during the producti... | 08/26/2008 |
| 7416611 | Process and apparatus for treating a workpiece with gases In a method and apparatus for cleaning or processing a workpiece, a process gas is brought into contact with the workpiece by diffusion through a heated liquid layer on the workpiece, and by bulk transport achieved by entraining the gas in a liquid stream, spray or ... | 08/26/2008 |
| 7410814 | Process and apparatus for cleaning silicon wafers An effective electropurge process and apparatus for wet processing of semiconductor wafers applies electrical charges to the wafer surface with an ample voltage sufficient to provide an effective field intensity which can substantially eliminate intolerable sub-0.05... | 08/12/2008 |
| 7410909 | Method of removing ion implanted photoresist A method of removing an ion implanted photoresist comprises performing first cleaning a semiconductor substrate having the ion implanted photoresist using hot deionized water to which a megasonic process is applied, first rinsing the semiconductor substrate using co... | 08/12/2008 |
| 7396416 | Substrate cleaning device A substrate cleaning device comprises a chamber for cleaning a substrate; a substrate support installed in the chamber providing a surface for supporting the substrate during cleaning thereof; at least one cleaning solution supply outlet for spraying a cleaning solu... | 07/08/2008 |
| 7396806 | Semiconductor cleaner comprising a reducing agent, dispersant, and phosphonic acid-based chelant To provide a detergent composition which has little corrosion to a wiring material and is excellent in cleaning ability of a semiconductor substrate or semiconductor device on which the fine particles and the metal impurities are deposited. A detergent composition c... | 07/08/2008 |
| 7390758 | Method of manufacturing a semiconductor integrated circuit device with elimination of static charge A sealed type container accommodating a semiconductor substrate is positioned to a load port of a semiconductor manufacturing apparatus. The semiconductor substrate is taken out of the container. An ionizer is used for static-eliminating the semiconductor substrates... | 06/24/2008 |
| 7387988 | Thinner composition and method of removing photoresist using the same A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof. ... | 06/17/2008 |
| 7387130 | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating a... | 06/17/2008 |
| 7387989 | AlGaInN substrate, cleaning method of AlGaInN substrate, AlN substrate, and cleaning method of AlN substrate An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGa | 06/17/2008 |
| 7387868 | Treatment of a dielectric layer using supercritical CO A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon a... | 06/17/2008 |
| 7384486 | Chamber cleaning method A method for cleaning a process chamber in such a manner that chamber-cleaning chemicals or agents are incapable of remaining in the chamber after cleaning and chemically interfering with semiconductor fabrication or other processes subsequently carried out in the c... | 06/10/2008 |
| 7384900 | Composition and method for removing copper-compatible resist A composition for removing a copper-compatible resist includes about 10 to 30% by weight of an amine compound solvent, the amine compound solvent including an alkanol amine, about 10 to 80% by weight of a glycol group solvent, about 9.5 to 80% by weight of a polar s... | 06/10/2008 |
| 7381694 | Composition and method for removing photoresist materials from electronic components Composition and method for removing photoresist materials from electronic components. The composition is a mixture of at least one dense phase fluid and at least one dense phase fluid modifier. The method includes exposing a substrate to at least one pulse of the co... | 06/03/2008 |
| 7375066 | Semiconductor wafer cleaning agent and cleaning method A semiconductor surface cleaning agent containing a compound the molecule of which has a nitrogen atom having an unshared electron pair and used for cleaning the surface of a semiconductor on which copper wiring is provided, and a method for cleaning the surface of ... | 05/20/2008 |
| 7371263 | Plasmaless dry contact cleaning method using interhalogen compounds A method of removing an oxide layer from an article. The article may be located in a reaction chamber into which an interhalogen compound reactive with the oxide layer is introduced. A temperature of the reaction chamber may be modified so as to remove the oxide lay... | 05/13/2008 |
| 7367343 | Method of cleaning a surface of a cobalt-containing material, method of forming an opening to a cobalt-containing material, semiconductor processing method of forming an integrated circuit comprising a copper-containing conductive line, and a cobalt-containing film cleaning solution The invention includes methods of cleaning a surface of a cobalt-containing material, methods of forming an opening to a cobalt-containing material, semiconductor processing methods of forming an integrated circuit comprising a copper-containing conductive line, and... | 05/06/2008 |
| 7369697 | Process variable of interest monitoring and control Methods for monitoring and controlling process variables of interest during the substrate manufacturing process is provided. Numerical estimates for selected attributes of a feature of interest may be analyzed and applied in a numerical estimator to estimate the pro... | 05/06/2008 |
| 7368416 | Methods of removing metal-containing materials Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ... | 05/06/2008 |
| 7365044 | Chemical for data destruction A compound and method for rendering a hard disk drive forensically unrecoverable includes a solution comprising cerium ammonium nitrate, hydrochloric acid by mass, and water. When applied to the surface of a platter, the compound sufficiently disrupts or corrupts th... | 04/29/2008 |
| 7365012 | Etching method, a method of forming a trench isolation structure, a semiconductor substrate and a semiconductor apparatus An etching method of subjecting a base material to an etching process using an etching agent containing hydrogen fluoride and ozone is disclosed. The base material has a first region constituted from silicon as a main material and a second region constituted from Si... | 04/29/2008 |
| 7361231 | System and method for mid-pressure dense phase gas and ultrasonic cleaning Workpieces are loaded into a cleaning chamber. The cleaning chamber is pressurized with a first dense-phase cleaning fluid, the temperature and pressure of the first dense-phase fluid being maintained at less than about 1500 psi using a temperature control device. T... | 04/22/2008 |
| 7361606 | Method of forming a metal line and method of manufacturing display substrate having the same A method of forming a metal line is provided. A first metal layer and a second metal layer protecting the first metal layer are formed on a base substrate. The first metal layer includes aluminum or aluminum alloy. A photoresist pattern having a linear shape is form... | 04/22/2008 |
| 7360273 | Substrate cleaning device and substrate processing facility A substrate cleaning device is provided, which comprises a first cleaning room including a first cleaning portion for cleaning a substrate placed therein, and a second cleaning room including a second cleaning portion for cleaning a substrate provided therein. The f... | 04/22/2008 |
| 7360727 | Apparatus and method for the mechanical comminution of semiconductor materials A mechanical crushing apparatus for comminuting a polycrystalline silicon ingot, has a base and opposed comminuting and mating chisels, the chisels having longitudinal axises oriented at right angles to a longitudinal axis of the base and parallel to the surface of ... | 04/22/2008 |
| 7362412 | Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system A method and apparatus for reduction and prevention of residue formation and removal of residues formed in an immersion lithography tool. The apparatus including incorporation of a cleaning mechanism within the immersion head of an immersion lithographic system or i... | 04/22/2008 |
| 7361631 | Compositions for the removal of organic and inorganic residues A composition and method using same for removing photoresist and/or processing residue from a substrate are described herein. In one aspect, there is provided a composition for removing residue consisting essentially of: an acidic buffer solution having an acid sele... | 04/22/2008 |
| 7358197 | Method for avoiding polysilicon film over etch abnormal The method for avoiding polysilicon film over etch abnormal includes cleaning a semiconductor substrate. A dielectric layer is formed on the substrate. Subsequently, a first silicon source gas at a first flow rate is next performed injecting into a reaction chamber ... | 04/15/2008 |
| 7357291 | Solder metal, soldering flux and solder paste Solder metal consists essentially of 8.8 to 5.0 mass % of Zn, 0.05 to 0 mass % of Bi and the balance of Sn and unavoidable impurities. ... | 04/15/2008 |
| 7358175 | Serial thermal processor arrangement A serial thermal processing arrangement for treating a wafer of semiconductor material, the steps including: loading the wafer into a chamber at an initial station and purging the chamber with nitrogen gas; introducing formic acid vapor and nitrogen and heating the ... | 04/15/2008 |
| 7353560 | Proximity brush unit apparatus and method An apparatus is provided for producing a wet region and corresponding dry region on a wafer. A proximity brush unit delivers fluids with a rotatable brush to produce the wet region on the wafer. As the proximity brush unit moves in a selected scan method across the ... | 04/08/2008 |
