Bizarre Patents
Mouthguard made at least partially from an edible candy
A mouthguard includes a U-shaped upper bite plate which removably fits over upper teeth of a person, with the entire upper bite plate being made from a soft, deformable and edible gummi candy.
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| Number | Title | Issue Date |
| 4320716 | Ultra-high frequency device for depositing thin films on solids A device having means for forming a high frequency excitation zone in an elongated enclosure, a vacuum pump whose connection is positioned at one end of the enclosure, a device permitting the injection into the enclosure of a gaseous mixture containing at... | 03/23/1982 |
| 4289598 | Plasma reactor and method therefor A plasma reactor includes a series of parallel disposed electrodes carried in a vacuum vessel chamber. The series of electrodes is adapted to have alternate polarities. Supporting brackets are provided for positioning workpieces, such as multilayer printe... | 09/15/1981 |
| 4287851 | Mounting and excitation system for reaction in the plasma state Apparatus for supporting a plurality of wafer-like substrates so as to be treatable in a plasma environment. At least three plate-like electrically conductive electrodes are provided. They are parallel to and spaced from one another along an axis. A suppo... | 09/08/1981 |
| 4271005 | Workpiece support apparatus for use with cathode sputtering devices Apparatus for mounting a workpiece to be coated in a cathode sputtering device is disclosed. Various construction details enable effective masking or shielding of a portion of the workpiece from coating deposition. In detailed form a box-like member circu... | 06/02/1981 |
| 4264393 | Reactor apparatus for plasma etching or deposition Plasma reactor apparatus which provides improved uniformity of etching or deposition. A uniform radio frequency (RF) field is established between two closely spaced parallel plates disposed within the reactor. One of the plates functions as a manifold for... | 04/28/1981 |
| 4261762 | Method for conducting heat to or from an article being treated under vacuum A method and apparatus are disclosed for providing heat conduction between an article being treated in a vacuum and a support member by providing a gas under pressure of about 0.5 to 2.0 Torr between the article and the support member. The method and appa... | 04/14/1981 |
| 4256053 | Chemical vapor reaction system A chemical vapor reaction system including a closed reaction vessel. The vessel forms a reaction chamber which has an axis of length and a cross-section normal to the axis. An end closure is removable to provide access to the reaction chamber. Reactant ma... | 03/17/1981 |
| 4253417 | Closure for thermal reactor Apparatus for thermal oxidation of silicon wafers at high pressures of a type wherein a reactor of a refractory material is disposed within a pressure vessel, and wherein a margin of a wafer portal of the reactor and a closure of the refractory material h... | 03/03/1981 |
| 4236487 | Crystal plating apparatus A crystal plating device and method thereof in which a crystal to be plated and thereby set at a desired frequency is placed in an external removable holder or slug for insertion into a chamber of a plating device. The device is connected to a vacuum pump... | 12/02/1980 |
| 4233937 | Vapor deposition coating machine A machine for vapor coating a workpiece with a coating metal supplied in wire form includes a vessel enclosing a vacuum chamber and having a door for providing access to the vacuum chamber. The vessel is connected with a vacuum pump for evacuating the vac... | 11/18/1980 |
| 4232063 | Chemical vapor deposition reactor and process Apparatus and process for depositing materials such as Si3 N4 and SiO2 on semiconductor wafers in a hot-wall reactor. A perforated distribution tube is positioned in the reaction chamber, and the wafers are placed inside t... | 11/04/1980 |
| 4223048 | Plasma enhanced chemical vapor processing of semiconductive wafers Semiconductive wafers are processed, i.e., etched or layers deposited thereon, by means of a plasma enhanced chemical vapor processing system. The processing system includes an evacuable horizontal tubular envelope disposed within a surrounding heater or ... | 09/16/1980 |
| 4220116 | Reactant gas flow structure for a low pressure chemical vapor deposition system A structure for a low-pressure chemical vapor deposition system which achieves greater uniformity of deposition. The structure includes injection means designed to provide more uniform distribution of the reactant gases injected into the system, as well a... | 09/02/1980 |
| 4217855 | Vaporized-metal cluster ion source and ionized-cluster beam deposition device The present ion source called "Vaporized-Metal Cluster Ion Source" is adapted to produce ionized vapor aggregate (ionized cluster) instead of atomic or molecular ions in conventional ion sources. Clusters consisting of 102 -103 atoms... | 08/19/1980 |
| 4203387 | Cage for low pressure silicon dioxide deposition reactors A cage for low pressure chemical depositions reactors to provide for the relatively uniform deposition of silicon dioxide and phosphorus doped polysilicon along the length of a reactor by the chemical decomposition of silane. The cage is comprised of an o... | 05/20/1980 |
| 4191128 | Vacuum metallizing of hollow articles A vacuum metallizing apparatus for coating hollow articles such as tap bodies includes a carrier defining a shallow cylindrical chamber which is arranged for connection to a high vacuum source through valves. The carrier provides a plurality of ports with... | 03/04/1980 |
| 4188908 | Novel microscope slide smoker A microscope slide smoker device for providing a layer of smoke reactant to laboratory microscope slide comprising a base section having a flat upper surface with a rectangular aperture therein, fixture means mounted on said base at the shorter ends of sa... | 02/19/1980 |
| 4184188 | Substrate clamping technique in IC fabrication processes An electrostatic clamping technique for use in clamping substrates in various semiconductor fabrication processes is disclosed. One example takes the form of a substrate support plate which has deposited on its working face two layers of thermally conduct... | 01/15/1980 |
| 4178877 | Apparatus for plasma treatment of semiconductor materials An improved arrangement of electrode plates, semiconductor materials, electrode supports, and electrical power supplying circuitry is useful for plasma treatment of semiconductor materials in a reaction tube in the presence of a reaction gas.... | 12/18/1979 |
| 4134360 | Apparatus for vapor deposition on tubular substrate In the production of all-carbon composite articles by the cracking of a hydrocarbon gas to deposit carbon on a fibrous carbon substrate the substrate is held in the furnace by a ram movable in the furnace to engage the substrate. The gas is introduced ins... | 01/16/1979 |
| 4129090 | Apparatus for diffusion into semiconductor wafers In diffusing an impurity into semiconductor wafers within a silica tube by the use of a heating furnace, a method of diffusion involves the following steps: the semiconductor wafers are inserted into the tube from an inlet thereof, the inlet is sealed by ... | 12/12/1978 |
| 4113547 | Formation of epitaxial layers on substrate wafers utilizing an inert heat radiation ring to promote uniform heating A method is described for growing epitaxial layers of material on monocrystalline substrates, chiefly silicon, which are substantially free of slip dislocations. The method involves placing an encircling ring of inert, heat resistant material around the r... | 09/12/1978 |
| 4108106 | Cross-flow reactor A cross-flow reactor for single pass reaction of a plurality of semiconductor wafers with process gas at spaced locations within a heated reactor chamber. The process gas flows along a heated length of the chamber, counterflows to at least three spaced lo... | 08/22/1978 |
| 4098923 | Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat Silicon dioxide is pyrolytically deposited by the reaction of silane with oxygen on vertically mounted substrates in an evacuated system. A standard diffusion furnace equipped with a furnace tube which is vacuum tight is used. Injection tubes having multi... | 07/04/1978 |
| 4099041 | Susceptor for heating semiconductor substrates An integral graphite susceptor of the type comprising a hollow polyhedron, adapted to support a semiconductor substrate on an outer planar surface of a wall thereof, has a recessed cavity adjacent the inner surface of the wall and shaped so that the floor... | 07/04/1978 |
| 4094269 | Vapor deposition apparatus for coating continuously moving substrates with layers of volatizable solid substances Apparatus for the vapor deposition of volatizable solid substances on continuously moving substrates, more particularly for the production of photographic materials by vapor deposition of silver halides on continuosly moving substrates, is constructed so ... | 06/13/1978 |
| 4093201 | Disc support structure A support structure composed of Si or SiC for supporting semiconductor crystal discs during annealing or doping thereof. A somewhat tube-shaped member having at least one flat side is formed by thermal deposition of a gaseous silicon compound onto a simil... | 06/06/1978 |
| 3980854 | Graphite susceptor structure for inductively heating semiconductor wafers A susceptor for heating a plurality of semiconductor wafers, as by rf induction, comprises a hollow truncated pyramid of conventional graphite. The walls of the pyramid are planar except for ledges extending from the outer surfaces of the walls for suppor... | 09/14/1976 |
| 3934060 | Method for forming a deposited silicon dioxide layer on a semiconductor wafer The present invention is directed to a method for forming a thin silicon dioxide deposited layer on a semiconductor structure. The silicon dioxide layer is formed in a hot wall furnace typically used for diffusions. A convenient temperature is selected fr... | 01/20/1976 |
