...that after Walter Hunt patented the safety pin in 1849, he sold the rights to it for $400?
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| Number | Title | Issue Date |
| 7335394 | Substrate supporting frame A substrate supporting frame, a substrate supporting frame assembly including the frame, a method of framing a substrate using the frame, a method of fabricating a donor substrate using the substrate supporting frame assembly, and a method of fabricating an Organic ... | 02/26/2008 |
| 7335397 | Pressure gradient CVI/CVD apparatus and method An apparatus and method for densifying porous structures inside a furnace using pressure gradient CVI/CVD. The apparatus includes a stack of porous structures where each porous structure has an aperture therethrough. The apparatus also includes at least one ring-lik... | 02/26/2008 |
| 7332038 | Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is heated with a high frequency and is formed of inertly coated graphite; a g... | 02/19/2008 |
| 7331097 | Method of manufacturing a workpiece chuck A workpiece chuck includes an upper assembly on which can be mounted a flat workpiece such as a semiconductor wafer. A lower assembly is mountable to a base that supports the chuck. A non-constraining attachment means such as vacuum, springs or resilient washers app... | 02/19/2008 |
| 7331780 | Heat treatment jig for semiconductor wafer A heat treatment jig by the invention comprising: the diameter of a disk-type structure being 60% or more of that of loaded semiconductor wafers; the thickness being 1.0 mm or more but 10 mm or less; the surface roughness Ra of 0.1 μm or more but 100 μm or less at... | 02/19/2008 |
| 7331307 | Thermally sprayed member, electrode and plasma processing apparatus using the electrode A thermally sprayed member or an electrode includes a basic material, a thermally sprayed film formed on the surface of the basic material, the thermally sprayed film being made of an insulating ceramic and a metallic intermediate layer provided between the basic ma... | 02/19/2008 |
| 7332584 | Antibodies that specifically bind PMS2 Antibodies against PMS2 and PMS2-134 and cells that produce the anti-PMS2 and anti-PMS2-134 antibodies are provided. The antibodies of the invention may be used in methods for detecting a PMS2 protein, including a truncated PMS2, and in methods for detecting an abno... | 02/19/2008 |
| 7325692 | Cassette having separation plates for storing a plurality of semiconductor wafers A cassette for storing a plurality of semiconductor wafers with a space in the vertical direction has a plurality of support plates which are provided spaced apart from one another in the vertical direction. A receiving cut-out having a shape corresponding to the sh... | 02/05/2008 |
| 7326097 | Method and apparatus for manufacturing image displaying apparatus A method and an apparatus of manufacturing an image displaying apparatus including an electron source substrate and a phosphor substrate. The electron source substrate is provided with an electron emitting element formed by covering with a container and by applying ... | 02/05/2008 |
| 7322098 | Method of simultaneous two-disk processing of single-sided magnetic recording disks Various methods and apparatus for simultaneously processing two single-sided hard memory disks is provided. Disks are positioned in pairs, with one surface of one disk positioned adjacent one surface of the second disk, with the disk surfaces touching or with a slig... | 01/29/2008 |
| 7323258 | Magnetic recording medium and method for manufacturing the same A magnetic recording medium which allows high density recording and has excellent durability can be obtained. A magnetic recording medium includes: a plurality of ferromagnetic material dots arranged on a soft magnetic layer formed on a non-magnetic substrate so as ... | 01/29/2008 |
| 7318869 | Variable gas conductance control for a process chamber A deposition system in accordance with one embodiment of the present invention includes a process chamber, a stationary pedestal for supporting a substrate in the process chamber, and a moveable shield forming at least a portion of an enclosure defining the process ... | 01/15/2008 |
| 7317172 | Bake system Provided is a bake system. The bake system includes a heating plate having a heating plate having a substrate on an upper surface. A case is disposed below the heating plate to support the heating plate; a first cover is disposed above the heating plate and coupled ... | 01/08/2008 |
| 7316721 | Ceramic foam insulator with thermal expansion joint A canister for maintaining entrained particles in a gas stream passing there through. The canister has an outer annular member and an inner porous annular member. The inner porous annular member has rings with at least one expansion zone in each ring. An annular int... | 01/08/2008 |
| 7314526 | Reaction chamber for an epitaxial reactor Reaction chamer (10) for an epitaxial reactor comprising a belljar (14) made of insulating, transparent and chemically resistant material, a susceptor (24) provided with disk-shaped cavities (34a-n) for receiving wafers (... | 01/01/2008 |
| 7311784 | Plasma processing device This invention relates to a plasma processing system. A common problem in the manufacture of semiconductors is the maintenance of a constant fluid flow throughout the chamber in which the semiconductors are being etched. The focus ring described herein helps control... | 12/25/2007 |
| 7312163 | Atomic layer deposition methods, and methods of forming materials over semiconductor substrates The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a material over at least a portion of a substrate, and in which at least... | 12/25/2007 |
| 7311783 | Multiple axis tumbler coating apparatus The present invention relates to an apparatus for coating one or more workpieces such as components to be used in jet engines or industrial turbines. The apparatus comprises a device for simultaneously manipulating a workpiece about multiple axes while holding a cen... | 12/25/2007 |
| 7302910 | Plasma apparatus and production method thereof A plasma apparatus includes a container (11) having an opening, a dielectric member (13) supported by an end surface of an outer periphery of the opening of the container (11), an electromagnetic field supplying means for supplying an electromag... | 12/04/2007 |
| 7303991 | Atomic layer deposition methods The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition ... | 12/04/2007 |
| 7299104 | Substrate processing apparatus and substrate transferring method Shock waves occurring when opening a gate valve between two vacuum chambers and peeling of particles by a viscous force taking place when a gas is supplied into a vacuum chamber are necessary to be suppressed by the apparatus and method of the invention, whereby con... | 11/20/2007 |
| 7294207 | Gas-admission element for CVD processes, and device The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates. At least two process gases are led into a process chamber of a reactor separately from each other, through a gas inlet mechanism above a heated s... | 11/13/2007 |
| 7295288 | Systems and methods of imprint lithography with adjustable mask Systems and methodologies are provided that account for surface variations of a wafer by adjusting grating features of an imprint lithography mask. Such adjustment employs piezoelectric elements as part of the mask, which can change dimensions (e.g., a height change... | 11/13/2007 |
| 7288465 | Semiconductor wafer front side protection There is provided a method for making a wafer comprising the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral reg... | 10/30/2007 |
| 7288166 | Plasma processing apparatus A plasma processing apparatus for manufacturing a semiconductor device includes an apparatus for applying bias powers to a substrate to be processed and a material adjacent to the substrate, an apparatus for adjusting a feeding impedance for the bias power applied t... | 10/30/2007 |
| 7288492 | Method for forming interconnects on thin wafers A method of forming a semiconductor interconnect including, in the order recited: (a) providing a semiconductor wafer; (b) forming bonding pads in a terminal wiring level on the frontside of the wafer; (c) reducing the thickness of the wafer; (d) forming solder bump... | 10/30/2007 |
| 7282096 | Arrangement comprising a support body and a substrate holder which is driven in rotation and gas-supported thereon The invention relates to an arrangement comprising a support body with a substrate holder, mounted thereon on a gas bearing with rotating drive. The gas bearing and the rotating drive are formed by gas flowing in through nozzles arranged in the separating gaps betwe... | 10/16/2007 |
| 7282112 | Method and apparatus for an improved baffle plate in a plasma processing system The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baff... | 10/16/2007 |
| 7282158 | Method of processing a workpiece This invention relates to a method of processing a workpiece in a chamber. Initially a surface of the workpiece is treated by a process which includes supplying a reactive gas to the chamber through a first gas supply and the surface is then further treated using a ... | 10/16/2007 |
| 7281491 | Dielectric-coated electrode, plasma discharge treatment apparatus and method for forming thin film A dielectric-coated electrode having a conductive base material coated with a dielectric on a surface thereof, the dielectric including a first metal atom and a second metal atom. As for an ionic strength of the first metal atom and an ionic strength of the second m... | 10/16/2007 |
| 7279845 | Plasma processing method and apparatus A method and apparatus for processing a target substance by using atmospheric-pressure plasma produced by a composite waveform generated by superimposing a high-frequency sine wave and a high-frequency square wave at the same or substantially the same frequency and ... | 10/09/2007 |
| 7279049 | Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscr... | 10/09/2007 |
| 7275749 | Substrate supporting apparatus A substrate supporting apparatus for supporting a substrate or wafer in a non-contact state by Bernoulli theorem is disclosed. The substrate supporting apparatus 1 comprises a housing 2, a rotatable chuck 3 which is disposed in the housing 2 | 10/02/2007 |
| 7276123 | Semiconductor-processing apparatus provided with susceptor and placing block A semiconductor-processing apparatus comprises a susceptor and removable placing blocks detachably placed at a periphery of the susceptor for transferring a substrate. Retractable supporting members are provided for detaching/attaching the placing blocks from/to the... | 10/02/2007 |
| 7276125 | Barrel type susceptor The barrel type susceptor for use in the semiconductor epitaxial growth is characterized in that a face plate 5 of a susceptor main body 2 having the shape of a truncated cone is partitioned into two or more in a longitudinal direction thereof, each pa... | 10/02/2007 |
| 7273566 | Gas compositions Processes, etchants, and apparatus useful for etching an insulating oxide layer of a substrate without damaging underlying nitride features or field oxide regions. The processes exhibit good selectivity to both nitrides and field oxides. Integrated circuits produced... | 09/25/2007 |
| 7274006 | Heater A heater includes a heating member formed in a plate shape that includes a substrate-heating surface on which a substrate is mounted and a heating member rear surface which is on the opposite side of the substrate-heating surfaces. The heater also has a resistance h... | 09/25/2007 |
| 7270240 | Device for accomodating substrates The present invention is directed to a device for retaining substrates (S), such as wafers or silicon substrates for the production of photovoltaic elements. The device includes opposing walls (1) that are interconnected by at least two rod-like carrier eleme... | 09/18/2007 |
| 7270713 | Tunable gas distribution plate assembly A gas distribution plate assembly and a method for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate assembly includes a tuning plate coupled to a diffuser plate. The tuning plate has a plurality of orifice holes form... | 09/18/2007 |
| 7268076 | Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced int... | 09/11/2007 |