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| Number | Title | Issue Date |
| 4022601 | Method and apparatus for coating a glass substrate A continuous glass ribbon advances from a float forming chamber past a first heat source and into a coating chamber where a surface of the glass ribbon is provided with a pyrolytic oxide coating as a second heat source heats the opposed surface of the gla... | 05/10/1977 |
| 4019887 | Method for coating glass A coating consisting of or containing silicon is produced on glass by moving the glass, at a temperature of at least 400° C, past a coating station to which silane-containing gas is supplied. The gas is released close to the glass surface into a hot zone... | 04/26/1977 |
| 4015558 | Vapor deposition apparatus Multi-layer coating apparatus and system for coating a substrate having a coating chamber and means for advancing the substrate in a horizontal position through the coating chamber. The coating chamber is provided with means for depositing the coating on ... | 04/05/1977 |
| 3996884 | Device for processing an organic high molecular weight film The invention disclosed relates to an improved method and apparatus for glow discharge treatment of organic high molecular weight film. When glow discharge treatment is effected in the presence of an organic monomer vapor, the deposit coating is found to ... | 12/14/1976 |
| 3980854 | Graphite susceptor structure for inductively heating semiconductor wafers A susceptor for heating a plurality of semiconductor wafers, as by rf induction, comprises a hollow truncated pyramid of conventional graphite. The walls of the pyramid are planar except for ledges extending from the outer surfaces of the walls for suppor... | 09/14/1976 |
| 3974561 | Method of producing directly heatable hollow semiconductor bodies Hollow semiconductor bodies are formed from a gaseous phase by deposition on a heated mandrel and end zones of a so-produced body are doped so as to be conductive at room temperature.... | 08/17/1976 |
| 3974003 | Chemical vapor deposition of dielectric films containing Al, N, and Si Method for depositing a layer containing Al; N, and Si on a substrate which comprises providing a substrate to be coated, a carrier gas, and a gaseous mixture of nitrogen source compounds, aluminum source compounds and silicon source material and heating ... | 08/10/1976 |
| 3968019 | Method of manufacturing low power loss semiconductor device By forming a metallic coating on a sufficiently cleaned semiconductor substrate through ion plating, a low power loss and high switching speed semiconductor device is obtained which differs from an ordinary semiconductor device with a diffused junction. I... | 07/06/1976 |
| 3964430 | Semi-conductor manufacturing reactor instrument with improved reactor tube cooling A quartz reactor tube is provided with an electrically conductive hollow tube shaped into a coil surrounding but not contacting the outside surface of the quartz tube. The coil serves a double purpose of indirectly heating semi-conductor wafers within the... | 06/22/1976 |
| 3953704 | Coating apparatus The apparatus comprises a plasma torch capable of an output speed of at least 100 m/s, a fine powder distributor, and a substrate holder which can be heated electrically and cooled by water, which is at an adjustable distance from the torch, and which is ... | 04/27/1976 |
| 3939798 | Optical thin film coater Disclosed is an improved optical thin film coating system comprising all essential elements of resistive and electron beam evaporation systems, chemical vapor deposition systems and reactive plasma deposition systems. Sequences of cleaning and deposition ... | 02/24/1976 |
