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| Number | Title | Issue Date |
| 7292428 | Electrostatic chuck with smart lift-pin mechanism for a plasma reactor A lift pin assembly for use in a reactor for processing a workpiece includes plural lift pins extending generally parallel with a lift direction, each of the plural lift pins having a top end for supporting a workpiece and a bottom end. A lift table faces the bottom... | 11/06/2007 |
| 7288491 | Plasma immersion ion implantation process One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning... | 10/30/2007 |
| 7282096 | Arrangement comprising a support body and a substrate holder which is driven in rotation and gas-supported thereon The invention relates to an arrangement comprising a support body with a substrate holder, mounted thereon on a gas bearing with rotating drive. The gas bearing and the rotating drive are formed by gas flowing in through nozzles arranged in the separating gaps betwe... | 10/16/2007 |
| 7282112 | Method and apparatus for an improved baffle plate in a plasma processing system The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baff... | 10/16/2007 |
| 7282457 | Apparatus for stabilizing high pressure oxidation of a semiconductor device A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace is disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O a... | 10/16/2007 |
| 7279432 | System and method for forming an integrated barrier layer An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode ... | 10/09/2007 |
| 7279049 | Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscr... | 10/09/2007 |
| 7279732 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 10/09/2007 |
| 7279047 | Reactor for extended duration growth of gallium containing single crystals An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If de... | 10/09/2007 |
| 7279435 | Apparatus for stabilizing high pressure oxidation of a semiconductor device A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O ... | 10/09/2007 |
| 7279048 | Semiconductor manufacturing apparatus To provide a semiconductor manufacturing device, which is provided with a wafer holder capable of improving the cooling rate of a heater and retaining the homogeneity of the temperature distribution of the heater at cooling time and which can markedly shorten the ti... | 10/09/2007 |
| 7279661 | Heating apparatus A heating apparatus for a semiconductor producing system is provided, including a heater having a mounting face, an opposed back face, a first resistance heating element, a second resistance heating element provided along substantially the same plane as the first he... | 10/09/2007 |
| 7275865 | Temperature measuring apparatus using change of magnetic field A temperature measuring apparatus measures the temperature of a wafer in real time using a change of magnetic field during a thermal process. The temperature measuring apparatus includes: at least one conductive structure disposed on one surface of the wafer, in whi... | 10/02/2007 |
| 7276097 | Load-lock system, exposure processing system, and device manufacturing method A load-lock system includes a load-lock chamber arranged between a storage port which stores a substrate and a process chamber which processes the substrate in a process space maintained at a pressure lower than that in the storage port, and a dehumidifying unit whi... | 10/02/2007 |
| 7276125 | Barrel type susceptor The barrel type susceptor for use in the semiconductor epitaxial growth is characterized in that a face plate 5 of a susceptor main body 2 having the shape of a truncated cone is partitioned into two or more in a longitudinal direction thereof, each pa... | 10/02/2007 |
| 7274006 | Heater A heater includes a heating member formed in a plate shape that includes a substrate-heating surface on which a substrate is mounted and a heating member rear surface which is on the opposite side of the substrate-heating surfaces. The heater also has a resistance h... | 09/25/2007 |
| 7274867 | System and method for determining the temperature of a semiconductor wafer A system and method for determining the temperature of a semiconductor wafer at the time of thermal contact of the semiconductor wafer with a temperature sensing element. According to the invention, a temperature profile of the temperature sensing element is recorde... | 09/25/2007 |
| 7270724 | Scanning plasma reactor A scanning plasma reactor for exciting reactant gases at a substrate surface including a beam forming module, a gas injection module, a reaction chamber with a window and a vacuum chuck, a gas exhaust module. Radiation from the beam forming module and the reactant g... | 09/18/2007 |
| 7270713 | Tunable gas distribution plate assembly A gas distribution plate assembly and a method for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate assembly includes a tuning plate coupled to a diffuser plate. The tuning plate has a plurality of orifice holes form... | 09/18/2007 |
| 7268322 | Semiconductor heating apparatus A semiconductor heating apparatus, in which, when measuring the electrical properties of multiple chips formed on a large size wafer, only one or a several chips are heated uniformly, and the other chips are on standby at a low temperature. The semiconductor heating... | 09/11/2007 |
| 7267724 | Thin-film disposition apparatus A dividing plate for a thin-film deposition apparatus divides the interior of the vacuum reaction chamber into a plasma discharge space and a film deposition process space, by fixing or connecting a plurality of laminated plates together by securely bonding them ove... | 09/11/2007 |
| 7268321 | Wafer holder and semiconductor manufacturing apparatus A wafer holder is provided in which local heat radiation in supporting and heating wafers is kept under control and temperature uniformity of the wafer retaining surface is enhanced, and by making use of the wafer holder a semiconductor manufacturing apparatus suita... | 09/11/2007 |
| 7265962 | Electrostatic chuck and production method therefor The present invention provides an electrostatic chuck comprising a substrate, a dielectric layer formed by thermal spraying on an upper face of the substrate, an internal electrode embedded in the dielectric layer, a feeder terminal portion extending from a lower fa... | 09/04/2007 |
| 7262116 | Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate... | 08/28/2007 |
| 7259094 | Apparatus and method for heat treating thin film An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater whic... | 08/21/2007 |
| 7256132 | Substrate centering apparatus and method A semiconductor substrate centering mechanism includes a plurality of substrate support pins, each pin having a top surface. The top surfaces of the pins define a plane in which the substrate is supported. Each pin has a tab mounted eccentrically at the top surface ... | 08/14/2007 |
| 7256370 | Vacuum thermal annealer A vacuum thermal annealing device is provided having a temperature control for use with various materials, such as semiconductor substrates. A vacuum is used to remove air and outgas residual materials. Heated gas is injected planar to a substrate as pressure is qui... | 08/14/2007 |
| 7256375 | Susceptor plate for high temperature heat treatment Susceptor plates are provided for high temperature (e.g., greater than 1000° C.) batch processing of silicon wafers. The susceptor plates are designed to accommodate one wafer each, and a plurality of loaded susceptor plates are vertically spaced apart in a suscept... | 08/14/2007 |
| 7247817 | Ceramic heater having a resistance heater element A heater is provided including a plate having a heating surface for heating an object to be heated and a resistance heater element provided in the plate. This resistance heater element includes a continuous wiring pattern including a plurality of flexures and a ther... | 07/24/2007 |
| 7247513 | Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide A method of forming a layer of silicon carbide wherein silicon clusters are dissociated in a gas phase. Silicon clusters may be dissociated by a silicon-etching gas such as a group VII-containing component. A semiconductor device is also disclosed having a layer for... | 07/24/2007 |
| 7247818 | Substrate heating apparatus and manufacturing method for the same A substrate heating apparatus includes a ceramic base having a concave heating surface on which a substrate is placed, and a resistance heating element buried in the ceramic base. The central part of the concave heating surface defines the lowest point of the heatin... | 07/24/2007 |
| 7244311 | Heat transfer system for improved semiconductor processing uniformity A plasma processing system and methods for processing a substrate using a heat transfer system are provided. The heat transfer system, which is capable of producing a high degree of processing uniformity across the surface of a substrate, comprises a uniformity pede... | 07/17/2007 |
| 7241346 | Apparatus for vapor deposition A stage has a plate, a first seal surface, a stem, a second seal surface, a cover, a conductor and a flow path. A heater is embedded in the plate. A terminal for supplying power to the heater is exposed at one surface of the plate. The first seal surface is provided... | 07/10/2007 |
| 7241345 | Cylinder for thermal processing chamber The cylinder includes a core and a coating covering most of the core. The core is made from a heat-resistant or insulating material. The core has inner and outer side walls and opposing first and second ends. The outer side wall is further away from a central longit... | 07/10/2007 |
| 7241478 | Process for coating three-dimensional substrates with thin organic films and products The present invention relates to an apparatus and process for producing a thin organic film on a substrate using an ultrasonic nozzle to produce a cloud of micro-droplets in a vacuum chamber. The micro-droplets move turbulently within the vacuum chamber, isotropical... | 07/10/2007 |
| 7238241 | Method of producing high aspect ratio domes by vapor deposition An apparatus for the manufacture of chemical vapor deposited domes. The apparatus has a vapor deposition chamber with a plurality of sides, a base and a top where the base has a reactant port for receiving a flow of chemical reactants. A male mandrel is joined to on... | 07/03/2007 |
| 7238616 | Photo-assisted method for semiconductor fabrication The present invention provides a processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, and a source of phot... | 07/03/2007 |
| 7234862 | Apparatus for measuring temperatures of a wafer using specular reflection spectroscopy An apparatus (295) using specular reflection spectroscopy to measure a temperature of a substrate (135). By reflecting light (100) from a substrate, the temperature of the substrate can be determined using the band-edge characteristics of the su... | 06/26/2007 |
| 7234412 | Semiconductor substrate deposition processor chamber liner apparatus A method includes removing at least a piece of a deposition chamber liner from a deposition chamber by passing it through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. A repl... | 06/26/2007 |
| 7235138 | Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of these apparatus include microfeature workpiece holders that include ... | 06/26/2007 |
