Bizarre Patents
An electrified table cloth for preventing crawling insects from gaining access to the consumer's food or drink.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 6966951 | Apparatus of manufacturing a semiconductor device An apparatus of manufacturing a semiconductor device includes a chamber having an outlet, a susceptor in the chamber to hold a substrate thereon, a source material container supplying the chamber with a source material, a liquid mass flow controller connected to the... | 11/22/2005 |
| 6967154 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 11/22/2005 |
| 6965093 | Device for thermally treating substrates The aim of the invention is to enable substrates to be thermally treated in a more homogeneous manner. In order to achieve this, a device is provided for thermally treating substrates, especially semiconductor wafers, comprising at least two adjacent, essentially pa... | 11/15/2005 |
| 6965092 | Ultra fast rapid thermal processing chamber and method of use An apparatus and method and processing a semiconductor substrate that controls heating of the substrate to thereby control the depth of the junctions formed by impurities implanted in the semiconductor substrate by heating a device side of the semiconductor substrat... | 11/15/2005 |
| 6964876 | Method and device for depositing layers The invention relates to a device comprising a process chamber which is arranged in a reaction housing and which can be heated especially by supplying heat to a substrate holder, comprising a gas inlet for the admission of gaseous starting material, whereby the deco... | 11/15/2005 |
| 6962732 | Process for controlling thin film uniformity and products produced thereby Processes for controlling thickness uniformity of thin organosilicate films as they are deposited on a substrate, and as they finally result. During deposition of the film, which may be accomplished by CVD, PECVD, rapid thermal processing or the like, the substrate ... | 11/08/2005 |
| 6963692 | Heat-treating methods and systems A method involves increasing a temperature of a workpiece over a first time period to an intermediate temperature, and heating a surface of the workpiece to a desired temperature greater than the intermediate temperature, the heating commencing within less time foll... | 11/08/2005 |
| 6960264 | Process for fabricating films of uniform properties on semiconductor devices A process for forming a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate. The process includes varying the temperature within a reaction chamber while a layer of a material is formed upon the semiconductor subs... | 11/01/2005 |
| 6960416 | Method and apparatus for controlling etch processes during fabrication of semiconductor devices A method for controlling etch processes during fabrication of semiconductor devices comprises tests and measurements performed on non-product and product substrates to define an N-parameter CD control graph that is used to calculate a process time for trimming a pat... | 11/01/2005 |
| 6958302 | Atomic layer deposited Zr-Sn-Ti-O films using TiI4 A dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI4 precursor and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable usin... | 10/25/2005 |
| 6957690 | Apparatus for thermal treatment of substrates Methods and apparatuses are provided for cooling semiconductor substrates prior to handling. In one embodiment, a substrate and support structure combination is lifted after high temperature processing to a cold wall of a thermal processing chamber, which acts as a ... | 10/25/2005 |
| 6958098 | Semiconductor wafer support lift-pin assembly A modular lift-pin assembly includes a lift-pin having a distal end, a connector, and an actuator pin. The connector includes an actuator end having a plurality of catch fingers disposed around the actuator end. Each of the plurality of catch fingers includes a lip ... | 10/25/2005 |
| 6955741 | Semiconductor-processing reaction chamber The present application provides a PECVD reaction chamber for processing semiconductor wafers comprising a susceptor for supporting a semiconductor wafer inside the reaction chamber wherein the susceptor comprises a plurality vertical through-bores, a moving means f... | 10/18/2005 |
| 6955211 | Method and apparatus for gas temperature control in a semiconductor processing system A method and apparatus for controlling the temperature of at least one gas flowing into a processing chamber is provided. In one embodiment, a gas temperature control apparatus for semiconductor processing includes a gas delivery line coupled between a processing ch... | 10/18/2005 |
| 6955725 | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces Reactors having isolated gas connectors, systems that include such reactors, and methods for depositing materials onto micro-devices workpieces are disclosed herein. In one embodiment, a reactor for depositing material onto a micro-device workpiece includes a reacti... | 10/18/2005 |
| 6955719 | Manufacturing methods for semiconductor devices with multiple III-V material layers A method for fabricating semiconductor devices with thin (e.g., submicron) and/or thick (e.g., between 1 micron and 100 microns thick) Group III nitride layers during a single epitaxial run is provided, the layers exhibiting sharp layer-to-layer interfaces. Accordin... | 10/18/2005 |
| 6955720 | Plasma deposition of spin chucks to reduce contamination of Silicon wafers An apparatus for delivering a fluidic media to a wafer includes a housing defining a process chamber. A fluidic media delivery member is coupled to the process chamber. A rotatable chuck is positioned in the process chamber. The rotatable chuck has a wafer support s... | 10/18/2005 |
| 6955946 | Flip chip underfill system and method A system for dispensing a viscous material onto a substrate which includes a dispensing element, a viscous material reservoir and a metering device coupled between the reservoir and the dispensing element for metering a variable amount of a viscous material through ... | 10/18/2005 |
| 6956186 | Ceramic heater An objective of the present invention is to provide a ceramic heater making it possible to heat an object to be heated, such as a silicon wafer, evenly. The ceramic heater of the present invention is a ceramic heater having and a resistance heating element formed on... | 10/18/2005 |
| 6954269 | Ring chuck to hold 200 and 300 mm wafer A ring chuck that holds a wafer with a vacuum uses a vacuum trough that contacts the entire outer edge of the wafer. The chuck has a base having a top surface equal to or slightly smaller than a water to be tested with vacuum channels in the base. The base provides ... | 10/11/2005 |
| 6953730 | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate oxides formed from alloys such as cobalt-titanium are thermodynamically stable s... | 10/11/2005 |
| 6952889 | Forced convection assisted rapid thermal furnace An apparatus and corresponding method for heating a wafer during processing. The apparatus includes a process chamber enclosing a processing tube defining a processing area. The processing tube includes a first wall and a second wall which define a hollow cavity or ... | 10/11/2005 |
| 6953739 | Method for manufacturing a semiconductor device having hemispherical grains at very low atmospheric pressure using first, second, and third vacuum pumps An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being different from one ... | 10/11/2005 |
| 6954585 | Substrate processing method and apparatus A method for heating a wafer to a predetermined temperature, the wafer being held by a holding unit and being accommodated in a processing container equipped with a heater. The wafer is heated to a processing temperature while positioning the wafer at an adjacent po... | 10/11/2005 |
| 6953506 | Wafer cassette, and liquid phase growth system and liquid-phase growth process which make use of the same A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member an... | 10/11/2005 |
| 6951587 | Ceramic heater system and substrate processing apparatus having the same installed therein A ceramic heater system has a ceramic heater base having a substrate-mounting surface formed on the top surface thereof and a heater, buried in the heater base, for heating a substrate. A fluid passage is formed buried in the heater base below where the heater is bu... | 10/04/2005 |
| 6951804 | Formation of a tantalum-nitride layer A method of forming a tantalum-nitride layer (204) for integrated circuit fabrication is disclosed. Alternating or co-reacting pulses of a tantalum containing precursor and a nitrogen containing precursor are provided to a chamber (100) to form layers ... | 10/04/2005 |
| 6949833 | Combined atomic layer deposition and damascene processing for definition of narrow trenches The invention offers a structure that includes a substrate with a top surface and a bottom surface, an etched dielectric layer having sidewalls and an upper surface, wherein the etched dielectric layer with a thickness of v, is positioned upon a first portion of the... | 09/27/2005 |
| 6949719 | Thermal insulator having a honeycomb structure and heat recycle system using the thermal insulator A thermal insulator can change a heat insulation characteristic partially with a simple structure. The thermal insulator is divided into a plurality of parts in accordance with a temperature of a heat source which is insulated by the thermal insulator. The plurality... | 09/27/2005 |
| 6949143 | Dual substrate loadlock process equipment One embodiment relates to a loadlock having a first support structure therein to support one unprocessed substrate and a second support structure therein to support one processed substrate. The first support structure is located above the second support structure. T... | 09/27/2005 |
| 6946033 | Heated gas distribution plate for a processing chamber An apparatus for distributing gas in a processing system. In one embodiment, the system includes a gas distribution assembly having a gas distribution plate. The gas distribution plate defines a plurality of holes through which gases are transmitted. The assembly fu... | 09/20/2005 |
| 6946167 | Deposited film forming apparatus and deposited film forming method For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposit... | 09/20/2005 |
| 6942753 | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having a plurality of gas passages passing between an upstream side and a downstream side of the ... | 09/13/2005 |
| 6943392 | Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen The invention comprises capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen. In one embodiment, a capacitor includes first and second conductive electrodes having a high k capacitor dielectric r... | 09/13/2005 |
| 6941063 | Heat-treating methods and systems A method involves pre-heating a workpiece to an intermediate temperature, heating a surface of the workpiece to a desired temperature greater than the intermediate temperature, and enhancing cooling of the workpiece. Enhancing cooling may involve absorbing radiation... | 09/06/2005 |
| 6939579 | ALD reactor and method with controlled wall temperature The present invention relates to improved methods and apparatus for atomic layer deposition (ALD) of thin films on substrates such as wafers and flat panel displays. The invention provides an ALD reactor comprising a first temperature regulating system to control th... | 09/06/2005 |
| 6939801 | Selective deposition of a barrier layer on a dielectric material A method to selectively deposit a barrier layer on dielectric material that surrounds one or more metal interconnects on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermi... | 09/06/2005 |
| 6940047 | Heat treatment apparatus with temperature control system A floating substrate reactor allows heat treatment of a series of semiconductor substrates, one by one. The heat treatment occurs while flowing gas suspends a substrate between two heated surfaces of the reactor. The two heated surfaces each have multiple heating zo... | 09/06/2005 |
| 6936906 | Integration of barrier layer and seed layer The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed laye... | 08/30/2005 |
| 6936538 | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics A method and system to form a refractory metal layer over a substrate includes introduction of a reductant, such as PH3 or B2H6, followed by introduction of a tungsten containing compound, such as WF6, to form a tungsten l... | 08/30/2005 |
