Did You Know...
...that after Parker Brothers executives turned down the game of Monopoly because it had "52 fundamental errors" (including taking too long to play), a copy of the game wound up in the home of the company president who stayed up until 1 a.m. to finish playing it? He was so impressed by the game that the next day he wrote to inventor Charles Darrow and offered to buy it!
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| Number | Title | Issue Date |
| 7674338 | Heated substrate support and method of fabricating same A method and apparatus for forming a substrate support is provided herein. In one embodiment, the substrate support includes a body having a support surface and at least one groove. A heater element surrounded with a malleable heat sink is disposed in the groove. Th... | 03/09/2010 |
| 7670434 | Vapor phase growth apparatus It is to provide a vapor phase growth apparatus which can perform vapor phase growth of a thin film having a good uniformity throughout a surface of a wafer. The vapor phase growth apparatus includes at least a sealable reactor, a wafer containing member (wafer hold... | 03/02/2010 |
| 7658801 | Heat treatment apparatus A heating means is disclosed which comprises a reflector plate composed of an opaque quartz and a quartz tube welded to the surface of the reflector plate. A carbon wire which generates heat when a current is applied is inserted in the quartz tube. ... | 02/09/2010 |
| 7645342 | Restricted radiated heating assembly for high temperature processing A vapor deposition reactor and associated method are disclosed that increase the lifetime and productivity of a filament-based resistive-heated vapor deposition system. The reactor and method provide for heating the filament while permitting the filament to move as ... | 01/12/2010 |
| 7622007 | Substrate processing apparatus and semiconductor device producing method Disclosed is a substrate processing apparatus which comprises reaction tubes (3,4) for processing multiple substrates (27), a heater (5) for heating the substrates, and gas introducing nozzles (6,7,8,9,10) for supplying a gas into the rea... | 11/24/2009 |
| 7618494 | Substrate holding structure and substrate processing device The object of the present invention is to prevent damage due to thermal stress induced into a substrate holding table in a substrate holding structure for holding a substrate to be processed. In the substrate holding structure having the substrate holding table arra... | 11/17/2009 |
| 7601224 | Method of supporting a substrate in a gas cushion susceptor system An apparatus and method to position a wafer onto a wafer holder and to maintain a uniform wafer temperature is disclosed. The wafer holder or susceptor comprises a recess or pocket whose surface includes a grid containing a plurality of grid grooves that separate pr... | 10/13/2009 |
| 7585371 | Substrate susceptors for receiving semiconductor substrates to be deposited upon In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-con... | 09/08/2009 |
| 7485190 | Apparatus for heating a substrate in a variable temperature process using a fixed temperature chuck A method is provided for heating a substrate in a process chamber using a heated chuck. In accordance with the method, the substrate is lowered onto the chuck and heated to a first temperature less than a temperature of the chuck. The substrate is then raised away f... | 02/03/2009 |
| 7481888 | Heat treatment jig and heat treatment method for silicon wafer In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all ... | 01/27/2009 |
| 7449071 | Wafer holder with peripheral lift ring A wafer holder for supporting a wafer within a CVD processing chamber includes a vertically moveable lift ring configured to support the bottom peripheral surface of the wafer, and an inner plug having a top flat surface configured to support the wafer during wafer ... | 11/11/2008 |
| 7442275 | Lateral temperature equalizing system for large area surfaces during processing In many processes used in fabricating semiconductors the wafer is seated on the top surface of a pedestal and heated in a high energy process step, such as plasma etching. The pedestal, chuck or platen may be cooling but the wafer gradually heats until the process c... | 10/28/2008 |
| 7442900 | Chamber for uniform heating of large area substrates Embodiments of the present invention generally provide an apparatus for providing a uniform thermal profile to a plurality of large area substrates during thermal processing. In one embodiment, an apparatus for thermal processing large area substrates includes a cha... | 10/28/2008 |
| 7432475 | Vertical heat treatment device and method controlling the same A vertical heat processing apparatus includes a process chamber (5) defining a process field (A1) configured to accommodate a plurality of target substrates (W) supported at intervals in a vertical direction. The apparatus further includes a heating fu... | 10/07/2008 |
| 7432476 | Substrate heat treatment apparatus A substrate heat treatment apparatus for heat-treating a substrate includes a bake plate having projections on an upper surface thereof, a seal unit disposed peripherally of the upper surface of the bake plate for closing a lateral area of a minute space formed betw... | 10/07/2008 |
| 7432474 | Heating device A heating device includes a substantially cylindrical shaft joined to a joint surface of a plate-shaped ceramic substrate opposite to a heating surface, the ceramic substrate including a resistance heating element embedded in the ceramic substrate. The shaft include... | 10/07/2008 |
| 7431585 | Apparatus and method for heating substrates An apparatus for processing substrates is disclosed. In one embodiment, the apparatus includes a housing and a plurality of stacked cell structures in the housing. An actuator is adapted to move the plurality of stacked cell structures inside of the housing while su... | 10/07/2008 |
| 7429717 | Multizone heater for furnace The present invention relates to an apparatus and method for heating a semiconductor processing chamber. One embodiment of the present invention provides a furnace for heating a semiconductor processing chamber. The furnace comprises a heater surrounding side walls ... | 09/30/2008 |
| 7429718 | Heating and cooling of substrate support A substrate support assembly and method for controlling the temperature of a substrate within a process chamber are provided. A substrate support assembly includes an thermally conductive body comprising a stainless steel material, a substrate support surface on the... | 09/30/2008 |
| 7427329 | Temperature control for single substrate semiconductor processing reactor A reactor for heat treatment of a substrate having a process chamber within a substrate enclosing structure, and a support structure configured to position a substrate at a predetermined spacing between the upper part and the bottom part within the process chamber d... | 09/23/2008 |
| 7425689 | Inline physical shape profiling for predictive temperature correction during baking of wafers in a semiconductor photolithography process The post exposure bake cycle in a chemically amplified resist process is more precisely controlled by measuring the distance from multiple locations on the bottom of each processed wafer to a reference plane surface while the wafer is supported on a cool plate. Subs... | 09/16/2008 |
| 7422655 | Apparatus for performing semiconductor processing on target substrate An apparatus for performing a semiconductor process on a target substrate (W) includes a lifting mechanism (48) disposed in a worktable (38) to assist transfer of the target substrate. The lifting mechanism includes a lifter pin (51) configured ... | 09/09/2008 |
| 7420143 | Durable graphite connector and method for manufacturing thereof An article comprising a graphite part coated with a pyrolytic graphite (pG) for increased mechanical strength of at least 25% over an uncoated graphite part. In connector applications for use in a semiconductor processing assembly such as a heater, the pG coated com... | 09/02/2008 |
| 7414823 | Holder for use in semiconductor or liquid-crystal manufacturing device and semiconductor or liquid-crystal manufacturing device in which the holder is installed Affords a holder for use in semiconductor or liquid-crystal manufacturing devices—as well as semiconductor or liquid-crystal manufacturing devices in which the holder is installed—in which temperature uniformity in the processed-object retaining face is heighten... | 08/19/2008 |
| 7410355 | Method for the heat treatment of substrates A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surface... | 08/12/2008 |
| 7398014 | Enhanced rapid thermal processing apparatus and method A heating arrangement heats a first major surface of a workpiece with an illumination energy such that a first portion of the illumination energy is directly incident upon the first major surface of the workpiece and a second portion of the illumination energy is di... | 07/08/2008 |
| 7396432 | Composite shadow ring assembled with dowel pins and method of using A composite shadow ring that is constructed of an upper ring and a lower ring assembled together by a plurality of dowel pins and a method for using the ring. The upper ring and the lower ring each has a predetermined outside diameter that is substantially the same,... | 07/08/2008 |
| 7393418 | Susceptor A susceptor at least a surface thereof being coated with SiC, includes a recess where an wafer is mounted, the recess having an round portion disposed on a lower portion of an outer circumferential portion of the recess, a ring-shaped SiC crystal growth surface port... | 07/01/2008 |
| 7394043 | Ceramic susceptor Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resist... | 07/01/2008 |
| 7393417 | Semiconductor-manufacturing apparatus On a wafer holding area 50 on the upper surface of a susceptor 22, a wafer W is supported by a wafer support 54 such that a gap with a predetermined distance is formed between the wafer W and a wafer heating surface 52. A projection 58... | 07/01/2008 |
| 7394067 | Systems and methods for reducing alteration of a specimen during analysis for charged particle based and other measurement systems Systems and methods for reducing alteration of a specimen during by charged particle based and other measurements systems are provided. One system configured to reduce alteration of a specimen during analysis includes a vacuum chamber in which the specimen is dispos... | 07/01/2008 |
| 7390367 | Housing assembly for an induction heating device including liner or susceptor coating A housing assembly for an induction heating device defines a processing chamber and includes a susceptor and a thermally conductive liner. The susceptor surrounds at least a portion of the processing chamber. The thermally conductive liner is interposed between the ... | 06/24/2008 |
| 7390366 | Apparatus for chemical vapor deposition An apparatus for CVD is disclosed. Processing gas is injected to an upper center portion of a wafer supporting member by a gas focus ring installed at an inner side surface of a reaction chamber. The processing gas is prevented from coming down to a lower space of t... | 06/24/2008 |
| 7387686 | Film formation apparatus A metal atomic layer and an oxygen atomic layer are formed in this order by ALD, followed by rapid heating through RTA (Rapid Thermal Annealing). This cycle of steps is repeated to form a high dielectric constant film. ... | 06/17/2008 |
| 7381293 | Convex insert ring for etch chamber A new and improved insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring includes a generally convex inner surface which faces the wafer support and defines a gap ... | 06/03/2008 |
| 7381928 | Thermal processing apparatus and thermal processing method A light source including a plurality of flash lamps emits flashes thereby flash-heating a semiconductor wafer held by a thermal diffuser and a hot plate. The current distance of irradiation between the thermal diffuser and the hot plate holding the semiconductor waf... | 06/03/2008 |
| 7381276 | Susceptor pocket with beveled projection sidewall An apparatus for holding a semiconductor substrate comprises a plate having a pocket which holds the substrate, wherein the pocket comprises a lower surface and an inner edge. The inner edge comprises a plurality of members extending radially inward to reduce the ar... | 06/03/2008 |
| 7377977 | High-purity crystal growth A method of growing a crystal on a substrate disposed in a reactor, that provides a reactor chamber in which the substrate is disposed, includes flowing reactive gases inside the reactor chamber toward the substrate, the reactive gases comprising components that are... | 05/27/2008 |
| 7378618 | Rapid conductive cooling using a secondary process plane A method and apparatus for thermally processing a substrate is described. The apparatus includes a substrate support configured to move linearly and/or rotationally by a magnetic drive. The substrate support is also configured to receive a radiant heat source to pro... | 05/27/2008 |
| 7377776 | Semiconductor wafer baking apparatus A semiconductor wafer baking apparatus includes a hot plate, a container of which an upper part is open, and a cover that covers the upper part of the container. The cover includes an upper plate, a lower plate and a side wall that form a gas circulating space there... | 05/27/2008 |