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| Number | Title | Issue Date |
| 8141514 | Plasma processing apparatus, plasma processing method, and storage medium A plasma processing apparatus having a substrate processing chamber, which enables leakage of plasma into an exhaust space to be prevented. The substrate processing chamber has therein a processing space in which plasma processing is carried out on a substrate, an e... | 03/27/2012 |
| 8136480 | Physical vapor deposition system A physical vapor deposition system for making microparticles generated by using a non-transfer type plasma torch not generating an outgas even in an ultra-high vacuum environment accelerate by a supersonic gas flow and depositing microparticles on a substrate to for... | 03/20/2012 |
| 8117986 | Apparatus for an improved deposition shield in a plasma processing system The present invention presents an improved deposition shield for surrounding a process space in a plasma processing system, wherein the design and fabrication of the deposition shield advantageously provides for a clean processing plasma in the process space with su... | 02/21/2012 |
| 8104428 | Plasma processing apparatus A plasma processing apparatus that enables formation of a deposit film on a surface of a grounding electrode to be prevented. A substrate processing chamber has therein a processing space in which plasma processing is carried out on a substrate, an RF electrode that... | 01/31/2012 |
| 8100081 | Edge removal of films using externally generated plasma species The present invention provides methods and apparatuses for removing unwanted film from the edge area of substrate using remotely-generated plasmas. Activated plasma species are directed to the edge of the substrate to contact and remove the unwanted film, while intr... | 01/24/2012 |
| 8074599 | Plasma uniformity control by gas diffuser curvature Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream... | 12/13/2011 |
| 8011320 | Rotary pressure distributor and carousel-type hollow body treatment machine equipped therewith Rotary pressure distributor for a carousel-type hollow-body treatment machine, comprising several treatment stations, this distributor comprising two coaxial rings (2, 3) in sealed contact, one of them (3) a rotary ring comprising communication orifice... | 09/06/2011 |
| 8001927 | Plasma spraying device and a method for introducing a liquid precursor into a plasma gas stream The invention relates to a plasma spraying device (1) for spraying a coating (2) onto a substrate (3) by a thermal spray process. Said plasma spraying device (1) includes a plasma torch (4) for heating up a plasma gas (5) in... | 08/23/2011 |
| 7987814 | Lower liner with integrated flow equalizer and improved conductance A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is config... | 08/02/2011 |
| 7942111 | Method and device for vacuum-coating a substrate A method is proposed for vacuum-coating a substrate using a plasma-CVD method. In order to control ion bombardment during the vacuum coating, a substrate voltage, produced independently from a coating plasma, is applied to the substrate. The substrate voltage is mod... | 05/17/2011 |
| 7913646 | Vacuum processing apparatus and vacuum processing method The invention provides a vacuum processing apparatus having a function for removing particles on the surface of the sample stage in order to improve the yield of the sample being processed. The vacuum processing apparatus comprises a processing chamber 104 di... | 03/29/2011 |
| 7913645 | Methods and apparatus for incorporating nitrogen in oxide films In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the... | 03/29/2011 |
| 7882800 | Ring mechanism, and plasma processing device using the ring mechanism A ring mechanism, comprising a focus ring and divided cover rings surrounding a wafer W placed on a loading table (lower electrode) mounted in a processing chamber, wherein a ring-shaped clearance δ1 is provided between the divided rings to spread plasma to ... | 02/08/2011 |
| 7832354 | Cathode liner with wafer edge gas injection in a plasma reactor chamber The disclosure concerns a wafer support for use in a plasma reactor chamber, in which the wafer support has a wafer edge gas injector adjacent and surrounding the wafer edge. ... | 11/16/2010 |
| 7810448 | Apparatus and method for the treating of workpieces The invention relates to an apparatus and a method for the coating of hollow bodies, in particular for the internal coating of plastic drinks bottles by means of a PICVD. It is an object of the invention to ensure a flexible process sequence, a high throughput, an i... | 10/12/2010 |
| 7793612 | Ring plasma jet method and apparatus for making an optical fiber preform A method and apparatus for making an optical fiber preform, including injecting a plasma gas source into the first end of a tubular member; generating a ring plasma flame with the plasma gas source flowing through a plasma gas feeder nozzle, the plasma gas feeder no... | 09/14/2010 |
| 7665416 | Apparatus for generating excited and/or ionized particles in a plasma and a method for generating ionized particles An apparatus is described for generating excited and/or ionized particles in a plasma with a generator for generating an electromagnetic wave and an excitation chamber with a plasma zone in which the excited and/or ionized particles are formed. At least one excitati... | 02/23/2010 |
| 7578258 | Methods and apparatus for selective pre-coating of a plasma processing chamber An apparatus for selectively pre-coating a plasma processing chamber, including a chamber wall is disclosed. The apparatus includes a first set of RF electrodes, the first set of RF electrodes configured to strike a first pre-coat plasma, the first set of RF electro... | 08/25/2009 |
| 7571698 | Low-frequency bias power in HDP-CVD processes A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control s... | 08/11/2009 |
| 7484473 | Suspended gas distribution manifold for plasma chamber A gas inlet manifold for a plasma chamber having a perforated gas distribution plate suspended by a side wall comprising one or more sheets. The sheets preferably provide flexibility to alleviate stress in the gas distribution plate due to thermal expansion and cont... | 02/03/2009 |
| 7458335 | Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils A magnetic field-enhanced plasma reactor is disclosed, comprising a reaction chamber for applying a plasma to a substrate, a plurality of primary electromagnets disposed about said reaction chamber, and a plurality of secondary electromagnets. At least two of the pr... | 12/02/2008 |
| 7438018 | Confinement ring assembly of plasma processing apparatus A confinement ring assembly of a plasma treatment apparatus includes a cam ring disposed above the process chamber, a plurality of plungers disposed about a process chamber of the apparatus and operated by the cam ring, and a plurality of confinement rings coupled t... | 10/21/2008 |
| 7439678 | Magnetic and electrostatic confinement of plasma with tuning of electrostatic field A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatica... | 10/21/2008 |
| 7438765 | Adjustable shielding plate for adjusting an etching area of a semiconductor wafer and related apparatus and methods An apparatus for adjusting an etching area of a semiconductor wafer includes an adjustable shielding plate. The adjustable shielding plate includes a plurality of shielding members. Each of the plurality of shielding members are movable between a first position conf... | 10/21/2008 |
| 7431767 | Apparatus and method for growth of a thin film An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one of the reactants comprises excited species, e.g., radicals. In a spec... | 10/07/2008 |
| 7431797 | Plasma reactor with a dynamically adjustable plasma source power applicator A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the cei... | 10/07/2008 |
| 7429306 | Plasma processing system A plasma processing system includes a plasma processing chamber and a plasma confining portion for defining a plasma confined area in the processing chamber. The plasma confining portion includes a plurality of spaced-apart segments arranged in a structural array. A... | 09/30/2008 |
| 7422656 | Dry etching method and apparatus for use in the LCD device A dry etching step during the manufacturing of a substrate for a liquid crystal display (LCD) device is improved by placing the substrate at a predetermined distance away from the lower electrode to prevent damage of the substrate due to electrostatic formed therebe... | 09/09/2008 |
| 7421974 | Layer forming method, product comprising the layer, optical film, dielectric-coated electrode and plasma discharge apparatus A layer forming method is disclosed which comprises the steps of supplying power of not less than 1 W/cm2 at a high frequency voltage exceeding 100 kHz across a gap between a first electrode and a second electrode opposed to each other at atmospheric pres... | 09/09/2008 |
| 7419551 | Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing th... | 09/02/2008 |
| 7419566 | Plasma reactor The plasma reactor comprises at least one cooling device (15, 16) consisting of two cooling elements (15a, 15b; 16a, 16b) adapted to be separately switched on and off. The heat produced during the plasma... | 09/02/2008 |
| 7416633 | Plasma processing apparatus Described is a vacuum processing apparatus that includes a vacuum container which has a processing chamber inside thereof, wherein a plasma used for processing a sample is formed inside the processing chamber. The processing chamber has an upper side wall which surr... | 08/26/2008 |
| 7405521 | Multiple frequency plasma processor method and apparatus A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The... | 07/29/2008 |
| 7392759 | Remote plasma apparatus for processing substrate with two types of gases In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radi... | 07/01/2008 |
| 7387081 | Plasma reactor including helical electrodes A device for forming an ion sheath in a plasma to deposit coatings on a non-conducting substrate. The device comprises a tubular reaction chamber having an outer surface wound helically with a first electrode having a first width. Helical winding of the first electr... | 06/17/2008 |
| 7382098 | Plasma producing apparatus and doping apparatus An object of the present invention is to provide an apparatus for producing stable plasma. Another object of the present invention is to provide an apparatus having a long-lasting cathode electrode which is superior in field emission characteristic since the plasma ... | 06/03/2008 |
| 7374941 | Active reactant vapor pulse monitoring in a chemical reactor A method and apparatus for determining changes in a supply system, designed to supply repeated pulses of a vapor phase reactant to a reaction chamber is disclosed. One embodiment involves providing the reactant source, and a gas conduit to connect the reactant sourc... | 05/20/2008 |
| 7374620 | Substrate processing apparatus A substrate processing apparatus (10A) using a microwave plasma is disclosed wherein an inner partition wall (15) is provided within a process chamber (11) so that the inside of the process chamber (11) is divided into a space (11A... | 05/20/2008 |
| 7371332 | Uniform etch system Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, wher... | 05/13/2008 |
| 7371647 | Methods of forming transistors The invention encompasses a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nit... | 05/13/2008 |
