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| Number | Title | Issue Date |
| 7442946 | Nonuniform ion implantation apparatus and method using a wide beam A nonuniform ion implantation apparatus comprises a wide ion beam generator for generating a wide ion beam including a plurality of wide ion beams irradiated on at least two sections among a plurality of sections into which a wafer is divided, and a wafer drive unit... | 10/28/2008 |
| 7434537 | Device for the coating of objects An apparatus for coating objects having a single microwave source, two or more coating chambers, and an impedance structure or a waveguide structure. The coating chambers are connected to the single microwave source. The impedance structure or waveguide structure di... | 10/14/2008 |
| 7430985 | Plasma processing equipment Plasma processing equipment capable of increasing the heat resistance of a wave guide by using a high dielectric material, comprising a processing container 44 formed to allow vacuuming, a loading table 46 installed in the processing container for plac... | 10/07/2008 |
| 7419567 | Plasma processing apparatus and method A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a periphera... | 09/02/2008 |
| 7338575 | Hydrocarbon dielectric heat transfer fluids for microwave plasma generators A process and apparatus for cooling a plasma tube generally includes flowing a hydrocarbon dielectric heat transfer fluid into a space defined by the plasma tube and a concentric tube surrounding the plasma tube. In one embodiment, the hydrocarbon fluid is selected ... | 03/04/2008 |
| 7327089 | Beam plasma source A plasma source which includes a discharge cavity having a first width, where that discharge cavity includes a top portion, a wall portion, and a nozzle disposed on the top portion and extending outwardly therefrom, where the nozzle is formed to include an aperture ... | 02/05/2008 |
| 7321198 | Ion source with uniformity of radial distribution of ion beam intensity An ion source, comprising: a discharge chamber, in which is formed an opening; a coil, provided outside said discharge chamber, for generating plasma within said discharge chamber; an extraction electrode, which extracts ions in said plasma generated in said dischar... | 01/22/2008 |
| 7316199 | Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magneti... | 01/08/2008 |
| 7311796 | Plasma processing apparatus A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber suc... | 12/25/2007 |
| 7251012 | Lithographic apparatus having a debris-mitigation system, a source for producing EUV radiation having a debris mitigation system and a method for mitigating debris A lithographic apparatus is disclosed. The apparatus includes an illumination system that provides a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to impart the beam of radiation with a patter... | 07/31/2007 |
| 7210424 | High-density plasma processing apparatus A high-density plasma processing apparatus includes a processing chamber, having a susceptor for supporting an object to be processed positioned therein and a dielectric window positioned on the processing chamber to form an upper surface of the processing chamber. ... | 05/01/2007 |
| 7156046 | Plasma CVD apparatus A plasma CVD apparatus in which microwave power is supplied into a reaction chamber provided inside an annular waveguide through an antenna provided on the inner peripheral part of the waveguide to produce a plasma inside the reaction chamber and to form a film by a... | 01/02/2007 |
| 7157123 | Plasma-enhanced film deposition Methods and equipment for depositing films. In certain embodiments, there is provided a deposition chamber having a substrate-coating region and an electrode-cleaning region. In these embodiments, an electrode is positioned in the deposition chamber and has an inter... | 01/02/2007 |
| 7067034 | Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber includes a chamber within which a plasma is both ignited and sustained for processing. The chamber is defined at least in part by a wall and... | 06/27/2006 |
| 7064049 | Ion implantation method, SOI wafer manufacturing method and ion implantation system The present invention provides an ion implantation method which can achieve sufficient throughput by increasing a beam current even in the case of ions with a small mass number or low-energy ions, an SOI wafer manufacturing method, and an ion implantation system. Wh... | 06/20/2006 |
| 7060931 | Neutral beam source having electromagnet used for etching semiconductor device Disclosed is a neutral beam source used for etching a semiconductor device. The neutral beam source includes a plasma chamber having quartz provided at an outer wall thereof with an RF coil, a grid assembly, a reflective member, and an electromagnet arranged around ... | 06/13/2006 |
| 7059268 | Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma A magnetically enhanced plasma is produced with a permanent magnet assembly adjacent to a radio frequency (RF) biased wafer support electrode in a vacuum processing chamber of a semiconductor wafer processing apparatus. An annular peripheral region is provided on th... | 06/13/2006 |
| 7056416 | Atmospheric pressure plasma processing method and apparatus Provided is a plasma processing method for generating microplasma in a space of a microplasma source arranged in the vicinity of an object to be processed by supplying gas to the space and supplying electric power to a member located in the vicinity of the space, ma... | 06/06/2006 |
| 7048869 | Plasma processing apparatus and a plasma processing method In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, F is necessary, and there is a problem in that the etching characteristic fluctuates with a temperature fluctuation of the etching chamber. Using a UHF type ECR... | 05/23/2006 |
| 6972524 | Plasma processing system control A method of approximating an ion energy distribution function (IEDF) at a substrate surface of a substrate, the substrate being processed in a plasma processing chamber. There is included providing a first voltage value, the first voltage value representing a value ... | 12/06/2005 |
| 6962855 | Method of forming a porous material layer in a semiconductor device A material layer containing impurities that react with water molecules is formed on a substrate. The material layer is then heated under a pressure exceeding one atmosphere and in the presence of water vapor to generate pores in the material layer. The material laye... | 11/08/2005 |
| 6955177 | Methods for post polysilicon etch photoresist and polymer removal with minimal gate oxide loss The present invention pertains to methods for cleaning semiconductor wafers, more specifically, for removing polymeric and other residues from a wafer using dry plasmas generated with microwave (MW), electromagnetic field (inductively-coupled plasma (ICP)), and radi... | 10/18/2005 |
| 6946053 | Plasma reactor This invention is a hardware modification which permits greater uniformity of etching to be achieved in a high-density-source plasma reactor (i.e., one which uses a remote source to generate a plasma, and which also uses high-frequency bias power on the wafer chuck)... | 09/20/2005 |
| 6939434 | Externally excited torroidal plasma source with magnetic control of ion distribution A plasma reactor is described that includes a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal. The chamber has at least a first pair of ports near o... | 09/06/2005 |
| 6916400 | Device for the plasma treatment of gases Provided is a device for the microwave-sustained plasma treatment of gases, which comprises a hollow structure forming a waveguide intended to be connected to a microwave generator, and means for making the gas to be treated flow through the said structure in a regi... | 07/12/2005 |
| 6858120 | Method and apparatus for the fabrication of ferroelectric films The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li)... | 02/22/2005 |
| 6851939 | System for chemical vapor deposition at ambient temperature using electron cyclotron resonance and method for depositing metal composite film using the same A system for chemical vapor deposition at ambient temperature using electron cyclotron resonance (ECR) comprising: an ECR system; a sputtering system for providing the ECR system with metal ion; an organic material supply system for providing organic material of gas... | 02/08/2005 |
| 6849857 | Beam processing apparatus A beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3), first electrode (4) disposed in the vacuum chamber (3), and a second electrode ... | 02/01/2005 |
| 6805770 | Technique for improving uniformity of magnetic fields that rotate or oscillate about an axis Techniques used in systems that employ pairs of coils arranged around an axis to make a magnetic field that rotates around an axis to reduce or eliminate the effects of corners where adjacent ones of the coils meet on the uniformity of the magnetic field. The techni... | 10/19/2004 |
| 6771026 | Plasma generation by mode-conversion of RF-electromagnetic wave to electron cyclotron wave A method of plasma generation is provided in which the application of a static magnetic field perpendicular to the direction of the RF electric field allows for the propagation of an electromagnetic wave from a coil outside the chamber, through a dielectric window a... | 08/03/2004 |
| 6764575 | Magnetron plasma processing apparatus When a substrate 30 is to be subjected to a magnetron plasma process, a dipole ring magnet 21 is provided, in which a large number of anisotropic segment magnets 22 are arranged in a ring-like shape around the outer wall of a chamber 1. A... | 07/20/2004 |
| 6733617 | Direct detection of dielectric etch system magnet driver and coil malfunctions The direct detection of dielectric etch system magnet driver and coil malfunctions is disclosed. A dielectric etch system includes a plasma chamber in which a semiconductor wafer is placed to remove dielectric therefrom, and a number of coils positioned around the c... | 05/11/2004 |
| 6706141 | Device to generate excited/ionized particles in a plasma A device to generate excited and/or ionized particles in plasma with a generator to generate an electromagnetic wave and at least one plasma zone, in which the excited and/or ionized particles are formed by the electromagnetic wave. The plasma zone is formed in an i... | 03/16/2004 |
| 6689930 | Method and apparatus for cleaning an exhaust line in a semiconductor processing system An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor proces... | 02/10/2004 |
| 6680420 | Apparatus for cleaning an exhaust line in a semiconductor processing system An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to excite the constituents of particulate matter exhausted from a semiconductor processing ... | 01/20/2004 |
| 6673199 | Shaping a plasma with a magnetic field to control etch rate uniformity A substrate etching chamber has a substrate support, a gas supply to introduce a process gas into the chamber; an inductor antenna to sustain a plasma of the process gas in a process zone of the chamber, and an exhaust to exhaust the process gas. A magnet... | 01/06/2004 |
| 6660342 | Pulsed electromagnetic energy method for forming a film A method of forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by micr... | 12/09/2003 |
| 6620290 | Plasma process apparatus A plurality of microwave introduction windows are placed at the top wall of the reaction chamber. Microwaves of the same power are introduced into, e.g., two microwave introduction windows that are equivalent in location relationship with respect to the s... | 09/16/2003 |
| 6617152 | Method for creating a cell growth surface on a polymeric substrate A method, apparatus and product for producing an advantaged cell growth surface. According to the present invention, a stream of plasma is comprised of activated gaseous species generated by a microwave source. This stream is directed at the surface of a ... | 09/09/2003 |
| 6571729 | Apparatus for depositing a thin film on a data recording disk An apparatus for depositing a protective film on a data recording disk, including the steps of depositing a magnetic film layer as a data recording layer on a surface of a substrate while the substrate is at a magnetic film deposition temperature; heating... | 06/03/2003 |
