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| Number | Title | Issue Date |
| 7442271 | Miniature microwave plasma torch application and method of use thereof A miniature microwave plasma torch apparatus (10) is described. The microwave plasma torch apparatus (10) is used for a variety of applications where rapid heating of a small amount of material is needed. The miniature microwave plasma torch apparatus ... | 10/28/2008 |
| 7442272 | Apparatus for manufacturing semiconductor device An apparatus for improving the density and uniformity of plasma in the manufacture of a semiconductor device features a plasma chamber having a complex geometry that causes plasma density to be increased at the periphery or edge of a semiconductor wafer being proces... | 10/28/2008 |
| 7404991 | Device and control method for micro wave plasma processing A microwave is introduced into a process chamber through a waveguide (26) of the plasma process apparatus, thereby generating plasma. A reflection monitor (40) and an electric power monitor (42) monitor the electric power of a reflected wave ref... | 07/29/2008 |
| 7371332 | Uniform etch system Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, wher... | 05/13/2008 |
| 7311796 | Plasma processing apparatus A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber suc... | 12/25/2007 |
| 7288491 | Plasma immersion ion implantation process One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning... | 10/30/2007 |
| 7279732 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 10/09/2007 |
| 7267724 | Thin-film disposition apparatus A dividing plate for a thin-film deposition apparatus divides the interior of the vacuum reaction chamber into a plasma discharge space and a film deposition process space, by fixing or connecting a plurality of laminated plates together by securely bonding them ove... | 09/11/2007 |
| 7232772 | Substrate processing method A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a plan... | 06/19/2007 |
| 7229502 | Method of forming a silicon nitride layer A method of forming a silicon nitride layer is provided. A deposition furnace having an outer tube, a wafer boat, a gas injector and a uniform gas injection apparatus is provided. The wafer boat is positioned within the outer tube for carrying a plurality of wafers.... | 06/12/2007 |
| 7211144 | Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereaf... | 05/01/2007 |
| 7204886 | Apparatus and method for hybrid chemical processing A method and apparatus for performing multiple deposition processes is provided. In one embodiment, the apparatus includes a chamber body and a gas distribution assembly disposed on the chamber body. In one embodiment, the method comprises positioning a substrate su... | 04/17/2007 |
| 7204885 | Deposition system to provide preheating of chemical vapor deposition precursors Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction ... | 04/17/2007 |
| 7201942 | Coating method A method for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate sourc... | 04/10/2007 |
| 7201803 | Valve control system for atomic layer deposition chamber A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication wi... | 04/10/2007 |
| 7196020 | Method for PECVD deposition of selected material films A process for PECVD of selected material films on a substrate comprising the steps of placing a substrate in a PECVD chamber and maintaining the chamber under vacuum pressure while introducing a precursor gas, a reactant gas, and an ionization enhancer agent into th... | 03/27/2007 |
| 7175713 | Apparatus for cyclical deposition of thin films An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases i... | 02/13/2007 |
| 7166170 | Cylinder-based plasma processing system A method and system for reducing the cost of a vacuum processing system by utilizing separately fabricated parts for the walls and the tops and bottoms of chambers. Walls are formed from cylinders (e.g., aluminum tubing or rolled ring forgings), and plates are then ... | 01/23/2007 |
| 7159597 | Multistep remote plasma clean process A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the chamber. In one embodiment the process comprises transferring the substrate... | 01/09/2007 |
| 7156950 | Gas diffusion plate for use in ICP etcher A gas diffusion plate supplying process gases into a chamber of an ICP (inductively coupled plasma) etcher is provided in the present invention. The gas diffusion plate includes a porous plate comprised of a plurality of balls and formed by compressing and curing th... | 01/02/2007 |
| 7156046 | Plasma CVD apparatus A plasma CVD apparatus in which microwave power is supplied into a reaction chamber provided inside an annular waveguide through an antenna provided on the inner peripheral part of the waveguide to produce a plasma inside the reaction chamber and to form a film by a... | 01/02/2007 |
| 7153362 | System and method for real time deposition process control based on resulting product detection A system and method for real time deposition process control based on resulting product detection, where the system and method detect an amount of at least one reaction product in real time, while the deposition process is being performed, the detected amount of rea... | 12/26/2006 |
| 7143660 | Method and system for processing semiconductor wafers A method for processing semiconductor wafers includes processing a semiconductor wafer in a processing chamber having upper and lower chambers, decoupling the upper chamber from the lower chamber, cleaning the upper chamber, determining, while decoupled, that a leak... | 12/05/2006 |
| 7141499 | Apparatus and method for growth of a thin film An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one of the reactants comprises excited species, e.g., radicals. In a spec... | 11/28/2006 |
| 7138767 | Surface wave plasma processing system and method of using A SWP source includes an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. A power coupling system is coupled to the E... | 11/21/2006 |
| 7135653 | Multi-phase alternating current plasma generator A plasma generation system that is powered with an alternating current power source has been developed. The system includes a plasma generator that heats gas to a high temperature to form plasma. The gas is heated by passing through an electrical arc generated by el... | 11/14/2006 |
| 7125588 | Pulsed plasma CVD method for forming a film A method of forming an insulating ceramic film or a metallic film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power t... | 10/24/2006 |
| 7118781 | Methods for controlling formation of deposits in a deposition system and deposition methods including the same A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contigu... | 10/10/2006 |
| 7111629 | Method for cleaning substrate surface There is provided a surface cleaning apparatus and method using plasma to remove a native oxide layer, a chemical oxide layer, and a damaged portion from a silicon substrate surface, and contaminants from a metal surface. A mixture of H2 and N2 | 09/26/2006 |
| 7101795 | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor depo... | 09/05/2006 |
| 7056806 | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure.... | 06/06/2006 |
| 7045465 | Particle-removing method for a semiconductor device manufacturing apparatus In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is impart... | 05/16/2006 |
| 7037846 | Method and apparatus for micro-jet enabled, low energy ion generation and transport in plasma processing A method for creating and transporting low-energy ions for use in plasma processing of a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes generating plasma from a gas species to produce a plasma exhaust. The plasma e... | 05/02/2006 |
| 7037376 | Backflush chamber clean A processing chamber may be effectively cleaned by a remote plasma flowed through the chamber in a direction opposite to the direction of gas flowed during wafer processing. Specifically, the remotely generated plasma may be introduced directly into the chamber thro... | 05/02/2006 |
| 7033952 | Apparatus and method using a remote RF energized plasma for processing semiconductor wafers Chemical generator and method for generating a chemical species at a point of use such as the chamber of a reactor in which a workpiece such as a semiconductor wafer is to be processed. The species is generated by creating free radicals, and combining the free radic... | 04/25/2006 |
| 7022937 | Plasma processing method and apparatus for performing uniform plasma processing on a linear portion of an object A plasma processing method is used to process a linear portion of an object to be processed by generating a linear plasma by supplying an electric power to an electrode provided at a plasma source or the object to be processed while supplying gas to the plasma sourc... | 04/04/2006 |
| 7024105 | Substrate heater assembly A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. ... | 04/04/2006 |
| 7022948 | Chamber for uniform substrate heating Embodiments of the invention generally provide an apparatus and a method for providing a uniform thermal profile to a plurality of substrates during heat processing. In one embodiment, a cassette containing one or more heated substrate supports is moveably disposed ... | 04/04/2006 |
| 7017514 | Method and apparatus for plasma optimization in water processing An apparatus for managing plasma in wafer processing operations is disclosed which includes a housing having an internal region defined by an inner wall. The housing has an input port for supplying a plasma into the housing at a first end and an output port at a sec... | 03/28/2006 |
| 7013834 | Plasma treatment system A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing sp... | 03/21/2006 |
