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| Number | Title | Issue Date |
| 8181597 | Plasma generating apparatus having antenna with impedance controller Provided is a plasma generating apparatus. The apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna holder. The vacuum chamber has a hollow interior and is sealed at its top by a vacuum plate that has a through-hole at its center. The ESC is... | 05/22/2012 |
| 8028655 | Plasma processing system with locally-efficient inductive plasma coupling An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source includes a segmented configuration having high and low radiation segme... | 10/04/2011 |
| 7942112 | Method and apparatus for preventing the formation of a plasma-inhibiting substance A system and method for preventing formation of a plasma-inhibiting substance within a plasma chamber is provided. In one embodiment, an apparatus that includes a barrier component configured to be disposed within a plasma chamber. The barrier component includes a w... | 05/17/2011 |
| 7854213 | Modulated gap segmented antenna for inductively-coupled plasma processing system An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source has a segmented configuration with high and low radiation segments and... | 12/21/2010 |
| 7849814 | Plasma generating device A plasma generating device provided with a plasma generating chamber (10) and a high-frequency antenna (1) arranged in the chamber (10) for generating inductively coupled plasma by applying a high-frequency power to a gas in the chamber (10 | 12/14/2010 |
| 7845310 | Wide area radio frequency plasma apparatus for processing multiple substrates An antenna array for a radio frequency plasma process chamber including, an array of electrodes, an array of dielectric tubes concentrically disposed about each electrode tube to define a chamber configured to be at atmospheric pressure between an outer surface of e... | 12/07/2010 |
| 7810449 | Plasma processing system with locally-efficient inductive plasma coupling A low inductance RF antenna is provided for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The antenna has a planar segmented configuration having high and low efficiency segments and produces a generally ring-shaped ... | 10/12/2010 |
| 7806078 | Plasma treatment apparatus A plasma CVD apparatus has a container, and channels composed of introduction grooves and circumferential grooves for different types of gases are formed within the container. The gases introduced through source gas piping, auxiliary gas piping, and cleaning gas pip... | 10/05/2010 |
| 7685965 | Apparatus for shielding process chamber port A port provides access to a process chamber interior for exemplary gas injection and process analysis and measurement. Centering the port in an external RF coil reduces the strength of an electric field across the port in generating plasma in the chamber. Plasma-ind... | 03/30/2010 |
| 7673583 | Locally-efficient inductive plasma coupling for plasma processing system An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source has a segmented configuration with high and low radiation segments and... | 03/09/2010 |
| 7591232 | Internal coil with segmented shield and inductively-coupled plasma source and processing system therewith An RF antenna assembly is provided having a segmented, conductive, deposition baffle covering an antenna conductor designed for operation internal to a vacuum processing chamber in presence of metal vapor or ions. The antenna can be placed either above the wafer, or... | 09/22/2009 |
| 7571697 | Plasma processor coil A plasma processor coil can include a shorting turn ohmically or only reactively coupled to plural multi-turn, co-planar, interleaved spiral, parallel connected windings. A separate capacitor can be associated with each winding to shunt current from one portion of t... | 08/11/2009 |
| 7520246 | Power supply antenna and power supply method A power supply antenna comprises a plurality of coils disposed concentrically. Power supply portions formed at opposite ends of the respective coils are located in different phases on the same plane such that spacing between the adjacent power supply portions is equ... | 04/21/2009 |
| 7464662 | Compact, distributed inductive element for large scale inductively-coupled plasma sources An inductively coupled plasma source is provided with a compact inductive element that is configured to produce a spatially distributed plasma particularly suitable for processing large scale wafers. The element in its preferred embodiment is formed of a sheet mater... | 12/16/2008 |
| 7455030 | Plasma generating apparatus A plasma generating apparatus is provided with a plasma generating apparatus for ionizing gas by high frequency discharge within a plasma generating container to thereby generate a plasma and for discharging the plasma to the outside through a plasma discharge hole,... | 11/25/2008 |
| 7442272 | Apparatus for manufacturing semiconductor device An apparatus for improving the density and uniformity of plasma in the manufacture of a semiconductor device features a plasma chamber having a complex geometry that causes plasma density to be increased at the periphery or edge of a semiconductor wafer being proces... | 10/28/2008 |
| 7442273 | Apparatus using hybrid coupled plasma A hybrid coupled plasma type apparatus includes: a chamber having a gas-injecting unit; an electrostatic chuck in the chamber; an insulating plate over the gas-injecting unit; a high frequency generator; an impedance matching circuit connected to the high frequency ... | 10/28/2008 |
| 7441513 | Plasma-generated coating apparatus for medical devices and a method of coating deposition An apparatus for plasma polymerize coating of medical devices, such as stents, is disclosed. A method for forming plasma-polymerized coating for implantable medical devices is also disclosed. ... | 10/28/2008 |
| 7435926 | Methods and array for creating a mathematical model of a plasma processing system A method of creating a simplified equivalent circuit model of a plasma processing system, including an electrical measuring device, a lower electrode, an upper electrode, and a signal generator device is described. The method includes creating a simplified equivalen... | 10/14/2008 |
| 7430984 | Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region... | 10/07/2008 |
| 7431797 | Plasma reactor with a dynamically adjustable plasma source power applicator A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the cei... | 10/07/2008 |
| 7426900 | Integrated electrostatic inductive coupling for plasma processing An integrated electrostatic inductively-coupled (i-ESIC) device is provided for plasma processing that may be used as a primary or secondary source for generating a plasma to prepare substrates for, and to process substrates by applying, dielectric and conductive co... | 09/23/2008 |
| 7419566 | Plasma reactor The plasma reactor comprises at least one cooling device (15, 16) consisting of two cooling elements (15a, 15b; 16a, 16b) adapted to be separately switched on and off. The heat produced during the plasma... | 09/02/2008 |
| 7413627 | Deposition chamber and method for depositing low dielectric constant films An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is deliver... | 08/19/2008 |
| 7406925 | Plasma processing method and apparatus A plasma processing apparatus including a vacuum chamber, a gas supply unit for supplying gas into the vacuum chamber, an exhausting unit for exhausting the interior of the vacuum chamber, a pressure-regulating valve for controllin... | 08/05/2008 |
| 7404879 | Ionized physical vapor deposition apparatus using helical self-resonant coil Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a ma... | 07/29/2008 |
| 7399943 | Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece A plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber. A process gas inlet is coupled to the chamber and a process gas source coupled to the proce... | 07/15/2008 |
| 7381292 | Inductively coupled plasma generating apparatus incorporating serpentine coil antenna An inductively coupled plasma (ICP) generating apparatus includes an evacuated reaction chamber, an antenna installed at an upper portion of the reaction chamber to induce an electric field for ionizing reaction gas supplied into the reaction chamber and generating ... | 06/03/2008 |
| 7374648 | Single piece coil support assemblies, coil constructions and methods of assembling coil constructions The invention includes a coil support assembly having an insulator interfacing a surface of a shield disposed within a processing chamber. The insulator has an extension which extends through the shield. A second insulator is disposed between the shield and a coil a... | 05/20/2008 |
| 7374620 | Substrate processing apparatus A substrate processing apparatus (10A) using a microwave plasma is disclosed wherein an inner partition wall (15) is provided within a process chamber (11) so that the inside of the process chamber (11) is divided into a space (11A... | 05/20/2008 |
| 7371332 | Uniform etch system Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, wher... | 05/13/2008 |
| 7367281 | Plasma antenna The plasma antenna is designed to allow connection between electric elements within the antenna to be varied without changing the construction of the antenna during a chemical vapor deposition process, thereby maximizing efficiency of a cleaning or deposition proces... | 05/06/2008 |
| 7363876 | Multi-core transformer plasma source A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and... | 04/29/2008 |
| 7354501 | Upper chamber for high density plasma CVD The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle ... | 04/08/2008 |
| 7355357 | Plasma accelerator A plasma accelerator is provided. The plasma accelerator includes a chamber having a closed top, an opened bottom and a lateral surface, a first coil section comprising a plurality of coils that are connected to one another in series and are wound around the lateral... | 04/08/2008 |
| RE40195 | Large area plasma source A chamber housing (2) enclosing a plasma region (20) in a large area plasma source used for performing plasma assisted processes in large area substrates, the chamber housing (2) being composed of: a housing member (2) constituting a subs... | 04/01/2008 |
| 7345428 | Transducer package for process control A system (10) is provided herein for monitoring the harmonic content of the RF signal delivered to an RF powered device (13). The system comprises (a) a voltage transducer (16) adapted to sample the voltage of the RF signal and to output a first... | 03/18/2008 |
| 7342361 | Plasma source A plasma source is described. The source includes a reactive impedance element formed from a plurality of electrodes. By providing such a plurality of electrodes and powering adjacent electrodes out of phase with one another, it is possible to improve the characteri... | 03/11/2008 |
| 7338577 | Inductively coupled plasma processing apparatus having internal linear antenna for large area processing An inductively coupled plasma processing apparatus for a large area processing, the inductively coupled plasma processing apparatus comprising: a reaction chamber; a plurality of linear antennas horizontally arranged at an inner upper portion of the reaction chamber... | 03/04/2008 |
| 7332038 | Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is heated with a high frequency and is formed of inertly coated graphite; a g... | 02/19/2008 |
