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| Number | Title | Issue Date |
| 8087379 | Localized plasma processing A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma ... | 01/03/2012 |
| 7442946 | Nonuniform ion implantation apparatus and method using a wide beam A nonuniform ion implantation apparatus comprises a wide ion beam generator for generating a wide ion beam including a plurality of wide ion beams irradiated on at least two sections among a plurality of sections into which a wafer is divided, and a wafer drive unit... | 10/28/2008 |
| 7439678 | Magnetic and electrostatic confinement of plasma with tuning of electrostatic field A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatica... | 10/21/2008 |
| 7419546 | Gas diffusion electrodes, membrane-electrode assemblies and method for the production thereof A method for forming a noble metal coating on a gas diffusion medium substantially free of ionomeric components comprising subjecting an electrically conductive web to a first ion beam having an energy not higher than 500 eV, then to a second beam having an energy o... | 09/02/2008 |
| 7389580 | Method and apparatus for thin-film battery having ultra-thin electrolyte A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step. A film of an energy-storage device is fabricated by depositing a first material layer to a location on a substrate. Energy is suppl... | 06/24/2008 |
| 7241360 | Method and apparatus for neutralization of ion beam using AC ion source There is provided by this invention a unique ion source for depositing thin films on a substrate in a vacuum chamber that neutralizes the positive electric charges that develop on the substrate and vacuum chamber apparatus that may cause arcing and degradation of th... | 07/10/2007 |
| 7194801 | Thin-film battery having ultra-thin electrolyte and associated method A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step. A film of an energy-storage device is fabricated by depositing a first material layer to a location on a substrate. Energy is suppl... | 03/27/2007 |
| 7183559 | Ion source with substantially planar design In certain example embodiments of this invention, there is provide an ion source including an anode and a cathode. In certain example embodiments, the cathode does not overhang over the anode, or vice versa. Since no, or fewer, areas of overhang are provided between... | 02/27/2007 |
| 7180242 | Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatica... | 02/20/2007 |
| 7171918 | Focused ion beam deposition Introducing at least one metal such as cobalt, molybdenum, metal carbonyl, tungsten, platinum, or other suitable metal to a focused ion beam. Introducing the focused ion beam to a substrate within a processing chamber. Forming at least one layer over a substrate. Ap... | 02/06/2007 |
| 7126284 | Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatica... | 10/24/2006 |
| 7119491 | Magnetic and electrostatic confinement of plasma with tuning of electrostatic field A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatica... | 10/10/2006 |
| 7109487 | Particle beam device A particle beam device, in particular an electron microscope, having at least two particle beam columns and one object slide having a receiving surface for receiving an object. The particle beam device makes it possible to align the surface of the object perpendicul... | 09/19/2006 |
| 7105813 | Method and apparatus for analyzing the composition of an object An ion analyzing apparatus for analyzing the composition of an object includes a chamber maintained under a vacuum, a support for supporting a plurality of objects disposed in the chamber, and a drive unit that selects one of the supported objects and rotates the se... | 09/12/2006 |
| 7094312 | Focused particle beam systems and methods using a tilt column Particle beam systems and methods for interacting with a workpiece according to this invention include a work stage assembly and a first particle beam source. The work stage assembly is adapted a) for supporting a workpiece, b) for translating along a first axis, c)... | 08/22/2006 |
| 7087525 | Methods of forming layers over substrates The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture comprises a precursor of a desired material within a supercritical fluid. The precursor... | 08/08/2006 |
| 7033647 | Method of synthesising carbon nano tubes Method of synthesizing carbon nano tubes (CNTs) on a catalyst layer formed on a support member, by catalytic deposition of carbon from a gaseous phase, whereby an ion beam is used prior to, during, and/or after formation of the carbon nano tubes for modifying the ph... | 04/25/2006 |
| 7026763 | Apparatus for magnetic and electrostatic confinement of plasma An apparatus and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrosta... | 04/11/2006 |
| 7023128 | Dipole ion source A dipole ion source (FIG. 1) includes two cathode surfaces, a substrate (1) and a pole (3); wherein a gap is defined between the substrate and the pole; an unsymmetrical mirror magnetic field including a compressed end, wherein the substrate is ... | 04/04/2006 |
| 7015646 | Magnetic and electrostatic confinement of plasma with tuning of electrostatic field A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatica... | 03/21/2006 |
| 6995515 | Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatica... | 02/07/2006 |
| 6988463 | Ion beam source with gas introduced directly into deposition/vacuum chamber An ion source is provided wherein depositing gas and/or maintenance gas is/are introduced into the ion source via the vacuum/depositing chamber, thereby reducing the amount(s) of undesirable insulative build-ups on the anode and/or cathode of the source in an area p... | 01/24/2006 |
| 6957624 | Apparatus and a method for forming an alloy layer over a substrate One embodiment of the invention involves introducing at least two metals into a chamber for forming an alloy layer over a substrate. This is accomplished by a variety of methods. In one embodiment, at least two metals are mixed and introduced into a chamber in which... | 10/25/2005 |
| 6930316 | Ion implantation system and ion implantation method In an ion implantation system including (a) an ion source (b) a mass analyzing portion, (c) an ion acceleration portion, (d) an ion beam focusing/deflecting portion, and (e) an end station chamber for implanting ions onto a semiconductor substrate. The ion source co... | 08/16/2005 |
| 6911779 | Magnetic mirror plasma source The preferred embodiments described herein provide a magnetic mirror plasma source. While the traditional magnetic/electrostatic confinement method is ideal for many applications, some processes are not best served with this arrangement. The preferred embodiments de... | 06/28/2005 |
| 6874443 | Layer-by-layer etching apparatus using neutral beam and etching method using the same A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and... | 04/05/2005 |
| 6799531 | Method for making films utilizing a pulsed laser for ion injection and deposition A simple, relatively inexpensive, yet effective PLD method is provided for forming extremely clean films with reduced particulate densities and size. A PLD system is used for producing the thin films and includes a PLD chamber wherein a laser beam ablates a target m... | 10/05/2004 |
| 6733590 | Method and apparatus for multilayer deposition utilizing a common beam source A single, or common, ion beam source is utilized for ion beam deposition (IBD) of defect-free multilayer coatings, e.g., multilayer, carbon-based protective overcoats for magnetic and/or magneto-optical (MO) data recording/information storage and retrieval media suc... | 05/11/2004 |
| 6669824 | Dual-scan thin film processing system A deposition system is described. The deposition system includes a deposition source that generates deposition flux comprising neutral atoms and molecules. A shield defining an aperture is positioned in the path of the deposition flux. The shield passes t... | 12/30/2003 |
| 6663747 | Apparatus and method for enhancing the uniform etching capability of an ion beam grid A shaper for an ion beam gun has a plate with a non-symmetrical profile including notches and tabs. The shaper is mounted to the surface of an ion beam grid having an array of holes. The shaper is oriented radially on the grid and covers some of the holes... | 12/16/2003 |
| 6664740 | Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained ele... | 12/16/2003 |
| 6653792 | Ion implanting system An ion implanting system including an ion implanting chamber for implanting an ion into a semiconductor wafer, a load lock chamber for loading the semiconductor wafer into the ion implanting chamber, a turbo pump for creating a high vacuum atmosphere in t... | 11/25/2003 |
| 6645301 | Ion source An ion source for use in ion assisted deposition of films, has an ionization region, a gas supply supplying ionizable gas to the ionization region, a gas excitation system causing ionization of the gas, ion influencing means forming the ions into a curren... | 11/11/2003 |
| 6533908 | Device and method for coating substrates in a vacuum utilizing an absorber electrode The invention relates to a device and method for coating substrates in a vacuum, wherein a plasma is to be generated from a target and ionized particles of the plasma are to be deposited on the substrate in the form of a layer, as has long been used in a ... | 03/18/2003 |
| 6526909 | Biased ion beam deposition of high density carbon A device for increasing the incident energy of an ion for coating a disc in an ion beam deposition process. The ion beam deposition process is performed in a chamber with the disc to be coated disposed therein. An ion source, having a voltage level, is in... | 03/04/2003 |
| 6497194 | Focused particle beam systems and methods using a tilt column Particle beam systems and methods for interacting with a workpiece according to this invention include a work stage assembly and a first particle beam source. The work stage assembly is adapted a) for supporting a workpiece, b) for translating along a fir... | 12/24/2002 |
| 6467426 | Photomask correction device A secondary ion detector 130 senses defects on a photomask and outputs image information. The CPU 140 then displays this image information at a monitor 150. An operator then selects a pattern corresponding to a displayed defect from defect patterns record... | 10/22/2002 |
| 6394025 | Vacuum film growth apparatus A correction mechanism including a magnetic body (51) is placed at a position between a vacuum chamber (21) and a steering coil (23) and where line of magnetic force generated from the steering coil is present, to correct torsion and/or bias of a plasma b... | 05/28/2002 |
| 6365905 | Focused ion beam processing apparatus In a charged particle beam apparatus comprising an ion optical system 3 for focusing ions, a secondary charged particle detector 7 for detecting secondary charged particles produced by beam irradiation of scanning a focused ion beam 2 focused by the ion o... | 04/02/2002 |
| 6331227 | Enhanced etching/smoothing of dielectric surfaces A gas cluster ion beam (GCIB) etching apparatus having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etc... | 12/18/2001 |
