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| Number | Title | Issue Date |
| 7389580 | Method and apparatus for thin-film battery having ultra-thin electrolyte A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step. A film of an energy-storage device is fabricated by depositing a first material layer to a location on a substrate. Energy is suppl... | 06/24/2008 |
| H2212 | Method and apparatus for producing an ion-ion plasma continuous in time An ion-ion plasma source, that features a processing chamber containing a large concentration of halogen or halogen-based gases. A second chamber is coupled to the processing chamber and features an electron source which produces a high energy electron beam. The hig... | 04/01/2008 |
| 7262555 | Method and system for discretely controllable plasma processing A method and system for plasma generation and processing includes a plurality of beam generators each locally controllable and configured for operation upon a single substrate. A control circuit couples to each of the plurality of beam generators with the control ci... | 08/28/2007 |
| 7194801 | Thin-film battery having ultra-thin electrolyte and associated method A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step. A film of an energy-storage device is fabricated by depositing a first material layer to a location on a substrate. Energy is suppl... | 03/27/2007 |
| 7170068 | Method and system for discharging a sample A method for discharging a sample, the method includes: determining whether to discharge a negatively charged area of a sample or to discharge a positively charged area of the sample; and injecting gas, via an electrode and gas supply component, or setting a first e... | 01/30/2007 |
| 7094312 | Focused particle beam systems and methods using a tilt column Particle beam systems and methods for interacting with a workpiece according to this invention include a work stage assembly and a first particle beam source. The work stage assembly is adapted a) for supporting a workpiece, b) for translating along a first axis, c)... | 08/22/2006 |
| 7084572 | Plasma-accelerator configuration The invention relates to various advantageous embodiments of a plasma-accelerator configuration, especially for the configuration and design of electron sources used for ionizing the working gas and/or neutralizing the discharged plasma jet. ... | 08/01/2006 |
| 7038389 | Magnetron plasma source A point projection type flood plasma source implements a magnetron sputter cold cathode electron source in a discharge cavity separated from a process chamber by a narrow conduit and a solenoid magnetic field. The solenoid magnetic field impedes radial electron flow... | 05/02/2006 |
| 7014889 | Process and apparatus for plasma activated depositions in a vacuum Plasma deposition apparatus (1) and method that allows metal or nonmetal vapor (6) to be generated by electron-beam evaporation, guides that vapor using a noble gas stream (containing reactive gases in cases of reactive evaporation), ionizes the dense ... | 03/21/2006 |
| 6988463 | Ion beam source with gas introduced directly into deposition/vacuum chamber An ion source is provided wherein depositing gas and/or maintenance gas is/are introduced into the ion source via the vacuum/depositing chamber, thereby reducing the amount(s) of undesirable insulative build-ups on the anode and/or cathode of the source in an area p... | 01/24/2006 |
| 6983718 | Electron beam physical vapor deposition apparatus An electron beam physical vapor deposition (EBPVD) apparatus and a method for using the apparatus to produce a coating material (e.g., a ceramic thermal barrier coating) on an article. The EBPVD apparatus generally includes a coating chamber that is operable at elev... | 01/10/2006 |
| 6918351 | Apparatus for ion beam implantation This invention discloses an ion implantation apparatus that has an ion source and an ion extraction device for extracting an ion beam therefrom. The ion implantation apparatus includes an ion beam sweeping-and-deflecting device disposed immediately next to the ion e... | 07/19/2005 |
| 6688254 | Vapor deposition temperature control apparatus and method Coating temperature during vapor deposition of a ceramic coating on a substrate in a coating box or enclosure is maintained by means of a heat release cover or lid on the coating enclosure and movable in response to temperature in the coating enclosure ex... | 02/10/2004 |
| 6653792 | Ion implanting system An ion implanting system including an ion implanting chamber for implanting an ion into a semiconductor wafer, a load lock chamber for loading the semiconductor wafer into the ion implanting chamber, a turbo pump for creating a high vacuum atmosphere in t... | 11/25/2003 |
| 6629508 | Ionizer for gas cluster ion beam formation A neutral beam ionizing apparatus for electron impact ionization of a substantially cylindrical neutral beam. The apparatus includes an electron source, and a circularly cylindrical ionizing region that is substantially free of magnetic fields. In one emb... | 10/07/2003 |
| 6331227 | Enhanced etching/smoothing of dielectric surfaces A gas cluster ion beam (GCIB) etching apparatus having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etc... | 12/18/2001 |
| 6319569 | Method of controlling vapor deposition substrate temperature Coating temperature during vapor deposition of a ceramic coating on a substrate in a coating box or enclosure is maintained by means of a heat release cover or lid on the coating enclosure and movable in response to temperature in the coating enclosure ex... | 11/20/2001 |
| 6258173 | Film forming apparatus for forming a crystalline silicon film A film forming apparatus includes a silicon film forming vacuum chamber for forming a crystalline silicon film on a substrate; a film forming device provided for the vacuum chamber for forming a pre-film of the crystalline silicon film on a target surface... | 07/10/2001 |
| 6238512 | Plasma generation apparatus An object is to make it possible to prevent electron temperature distribution from becoming uneven at surface of a process object when dimensions of the process object are large. A region division unit 30 encloses the inside of a ring-shaped discharge ele... | 05/29/2001 |
| 6220204 | Film deposition method for forming copper film A film deposition apparatus to which the present invention is applied comprises a vacuum chamber 11, a plasma beam generator 13, a main hearth 30 which is disposed within the vacuum chamber and which serves as an anode containing a vaporizable material Cu... | 04/24/2001 |
| 6180049 | Layer manufacturing using focused chemical vapor deposition A solid freeform fabrication process and apparatus for making a three-dimensional object. The process includes the steps of (1) positioning a material deposition sub-system a selected distance from a target surface, (2) operating this sub-system to deposi... | 01/30/2001 |
| 6145470 | Apparatus for electron beam physical vapor deposition An apparatus for depositing a ceramic coating by electron beam physical vapor deposition (EBPVD). Ceramic coatings of more uniform thickness over a larger surface area are deposited by increasing the size of a pool of molten ceramic from which the ceramic... | 11/14/2000 |
| 6126790 | Method of magnetically orienting thin magnetic films with a multiple-coil electromagnet An electromagnet assembly magnetically orients a thin magnetic film deposited onto a surface of a substrate. The magnetic orientation can take place in a low-pressure processing environment such as during the deposition of the thin magnetic film or during... | 10/03/2000 |
| 6089186 | Vacuum coating forming device The invention provides a vacuum coating forming device for forming a thin-film coating by a plasma beam on a substrate arranged in a vacuum chamber, the vacuum coating forming device being provided with a pressure gradient type plasma gun for generating t... | 07/18/2000 |
| 6042707 | Multiple-coil electromagnet for magnetically orienting thin films An electromagnet assembly magnetically orients a thin magnetic film deposited onto a surface of a substrate. The magnetic orientation can take place in a low-pressure processing environment such as during the deposition of the thin magnetic film or during... | 03/28/2000 |
| 6014944 | Apparatus for improving crystalline thin films with a contoured beam pulsed laser A method and apparatus is presented for crystallizing a thin film on a surate by generating a beam of pulsed optical energy, countouring the intensity profile of the beam, and illuminating the thin film with the beam to crystallize the thin film into a s... | 01/18/2000 |
| 5948169 | Apparatus for preventing particle deposition in a capacitance diaphragm gauge Apparatus for reducing a material deposition in a housing is disclosed herein. The apparatus includes: a first pressure sensing device which senses a pressure in a reaction chamber, a pumping device for pumping the vapor from the reaction chamber to the p... | 09/07/1999 |
| 5885354 | Method and apparatus for processing a specimen The invention relates to a method and to apparatus for processing a specimen, particularly an integrated circuit, in which an area of the specimen to be processed is scanned with a corpuscular beam and at least one gas is supplied above the area to be pro... | 03/23/1999 |
| 5795385 | Method of forming single-crystalline thin film by beam irradiator In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reactio... | 08/18/1998 |
| 5776253 | Apparatus for forming single-crystalline thin film by beam irradiator and beam reflecting device In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reactio... | 07/07/1998 |
| 5753045 | Vacuum treatment system for homogeneous workpiece processing A process provides for the reactive treatment of workpieces in which a plasma beam is produced in an evacuated recipient. With respect to the area of the highest plasma density along the beam axis, workpieces are arranged in a radially offset manner. Fres... | 05/19/1998 |
| 5656141 | Apparatus for coating substrates Apparatus for coating substrates 31, 31", . . . in a vacuum chamber 2 including a substrate carrier 30 disposed therein and a device 29 for generating a first plasma cloud 28 and, further, including magnets 26, 27 directing the plasma cloud 28 onto the su... | 08/12/1997 |
| 5639308 | Plasma apparatus A plasma apparatus generates plasma by introducing electron beams into a processing chamber filled with a reactive gas for irradiation of the reactive gas with the introduced electron beams, to process a substance by the generated plasma. The plasma appar... | 06/17/1997 |
| 5614273 | Process and apparatus for plasma-activated electron beam vaporization A process and apparatus for plasma-activated electron beam vaporization is rovided. The vaporizing material from at least two vaporizer crucibles is vaporized with electron beams. An electric voltage is applied to the vaporizer crucibles in such a way that... | 03/25/1997 |
| 5607509 | High impedance plasma ion implantation apparatus A high dose rate, high impedance plasma ion implantation method and apparatus to apply high voltage pulses to a target cathode within an ionization chamber to both sustain a plasma in the gas surrounding the target, and to implant ions from the plasma int... | 03/04/1997 |
| 5601652 | Apparatus for applying ceramic coatings An apparatus for applying ceramic coatings using an electron beam-physical vapor deposition apparatus is described. The apparatus includes means for introducing the anionic constitutent of the ceramic into a coating chamber and means for confining the ani... | 02/11/1997 |
| 5601653 | Apparatus for performing plasma process on semiconductor wafers and the like and method of performing plasma process A plasma processing apparatus for performing plasma process on a semiconductor or the like draws an electron beam from an electron source plasma and, after acceleration, introduces the electron beam into a reaction chamber where a requisite gas is supplie... | 02/11/1997 |
| 5545257 | Magnetic filter apparatus and method for generating cold plasma in semicoductor processing Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which all... | 08/13/1996 |
| 5534314 | Directed vapor deposition of electron beam evaporant A process for vapor depositing an evaporant onto a substrate is provided which involves: presenting the substrate to a deposition chamber, wherein the deposition chamber has an operating pressure of from 0.001 Torr to atmospheric pressure and has coupled ... | 07/09/1996 |
| 5487787 | Apparatus and method for plasma deposition The substrate in a plasma jet deposition system is provided with structural attributes, such as apertures and/or grooves, that facilitate efficient deposition. Groups of substrates are arranged with respect to the plasma beam in a manner which also facili... | 01/30/1996 |
