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| Number | Title | Issue Date |
| 7442272 | Apparatus for manufacturing semiconductor device An apparatus for improving the density and uniformity of plasma in the manufacture of a semiconductor device features a plasma chamber having a complex geometry that causes plasma density to be increased at the periphery or edge of a semiconductor wafer being proces... | 10/28/2008 |
| 7431767 | Apparatus and method for growth of a thin film An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one of the reactants comprises excited species, e.g., radicals. In a spec... | 10/07/2008 |
| 7327089 | Beam plasma source A plasma source which includes a discharge cavity having a first width, where that discharge cavity includes a top portion, a wall portion, and a nozzle disposed on the top portion and extending outwardly therefrom, where the nozzle is formed to include an aperture ... | 02/05/2008 |
| 7315034 | Irradiation system with ion beam/charged particle beam In an irradiation system with an ion beam/charged particle beam having an energy filter, the energy filter is formed by deflection electrodes and a deflection magnet which can be switchingly used. The deflection magnet has a general window-frame shape and is formed ... | 01/01/2008 |
| 7312418 | Semiconductor thin film forming system In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20 | 12/25/2007 |
| 7300558 | Rapid cycle time gas burster An apparatus for rapidly establishing at least one preselected gas pressure in a process chamber comprising: (a) a chamber defining an interior space adapted to be maintained at a reduced pressure; and (b) a gas su... | 11/27/2007 |
| 7264849 | Roll-vortex plasma chemical vapor deposition method A chemical vapor deposition method includes a step of maintaining a hydrogen plasma at low pressure in a processing chamber. The processing chamber has a long, wide, thin geometry to favor deposition of thin-film silicon on sheet substrates over the chamber walls. T... | 09/04/2007 |
| 7259052 | Manufacture of a semiconductor integrated circuit device including a pluarality of a columnar laminates having different spacing in different directions For improving the filling properties between vertical MISFETs constituting a SRAM memory cell, the vertical MISFETs are formed over horizontal drive MISFETs and transfer MISFETs, and they are disposed with a narrow pitch in the Y direction and a wide pitch in the X ... | 08/21/2007 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r... | 07/17/2007 |
| 7217326 | Chemical vapor deposition apparatus A chemical vapor deposition apparatus is provided, which includes: a chamber having an inner space; a gas feed member for supplying a gas into the chamber; a susceptor disposed in the chamber and supporting a substrate; a diffuser partitioning the inner space of the... | 05/15/2007 |
| 7211144 | Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereaf... | 05/01/2007 |
| 7201803 | Valve control system for atomic layer deposition chamber A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication wi... | 04/10/2007 |
| 7183564 | Channel spark source for generating a stable focused electron beam In a channel spark source triggered by gas discharge for generating a stable focused electron beam, a gas supply for a hollow cathode thereof is provided which generates in the hollow cathode a pressure differential so that the multiplication of charge carriers in a... | 02/27/2007 |
| 7175713 | Apparatus for cyclical deposition of thin films An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases i... | 02/13/2007 |
| 7141095 | Precursor material delivery system for atomic layer deposition A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume is preferably established between the precursor container and the rea... | 11/28/2006 |
| 7119032 | Method to protect internal components of semiconductor processing equipment using layered superlattice materials This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Laye... | 10/10/2006 |
| 7104217 | Plasma processing apparatus The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner th... | 09/12/2006 |
| 7101795 | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor depo... | 09/05/2006 |
| 7097712 | Apparatus for processing a semiconductor A multi-chamber system for providing a process of a high degree of cleanliness in fabricating semiconductor devices such as semiconductor integrated circuits. The system comprises a plurality of vacuum apparatus (e.g., a film formation apparatus, an etching apparatu... | 08/29/2006 |
| 7085616 | Atomic layer deposition apparatus A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer sup... | 08/01/2006 |
| 7059267 | Use of pulsed grounding source in a plasma reactor A method for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor. ... | 06/13/2006 |
| 7037376 | Backflush chamber clean A processing chamber may be effectively cleaned by a remote plasma flowed through the chamber in a direction opposite to the direction of gas flowed during wafer processing. Specifically, the remotely generated plasma may be introduced directly into the chamber thro... | 05/02/2006 |
| 7025856 | Processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etc... | 04/11/2006 |
| 7022948 | Chamber for uniform substrate heating Embodiments of the invention generally provide an apparatus and a method for providing a uniform thermal profile to a plurality of substrates during heat processing. In one embodiment, a cassette containing one or more heated substrate supports is moveably disposed ... | 04/04/2006 |
| 7013834 | Plasma treatment system A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing sp... | 03/21/2006 |
| 7011039 | Multi-purpose processing chamber with removable chamber liner A multi-purpose chamber that can be configured for a variety of processes, including deposition processes and etch processes, for example, by installing one or more removable chamber liners. The multi-purpose chamber provides uniform plasma confinement around a subs... | 03/14/2006 |
| 6998579 | Chamber for uniform substrate heating In a first aspect, a first apparatus is provided for heating substrates. The first apparatus includes (1) a chamber having a bottom portion and a top portion; (2) a plurality of heated supports disposed within the chamber to support at least two substrates thereon; ... | 02/14/2006 |
| 6998014 | Apparatus and method for plasma assisted deposition Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a powe... | 02/14/2006 |
| 6968236 | Ceramic cardiac electrodes A cardiac electrode termination pair system that is particularly compatible with Magnetic Resonance Imaging (MRI) procedures. The electrodes include tip and ring electrodes made of a body-compatible ceramic on which is applied via electroplating, sputtered or the li... | 11/22/2005 |
| 6951804 | Formation of a tantalum-nitride layer A method of forming a tantalum-nitride layer (204) for integrated circuit fabrication is disclosed. Alternating or co-reacting pulses of a tantalum containing precursor and a nitrogen containing precursor are provided to a chamber (100) to form layers ... | 10/04/2005 |
| 6946033 | Heated gas distribution plate for a processing chamber An apparatus for distributing gas in a processing system. In one embodiment, the system includes a gas distribution assembly having a gas distribution plate. The gas distribution plate defines a plurality of holes through which gases are transmitted. The assembly fu... | 09/20/2005 |
| 6946053 | Plasma reactor This invention is a hardware modification which permits greater uniformity of etching to be achieved in a high-density-source plasma reactor (i.e., one which uses a remote source to generate a plasma, and which also uses high-frequency bias power on the wafer chuck)... | 09/20/2005 |
| 6946167 | Deposited film forming apparatus and deposited film forming method For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposit... | 09/20/2005 |
| 6939434 | Externally excited torroidal plasma source with magnetic control of ion distribution A plasma reactor is described that includes a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal. The chamber has at least a first pair of ports near o... | 09/06/2005 |
| 6936906 | Integration of barrier layer and seed layer The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed laye... | 08/30/2005 |
| 6929712 | Plasma processing apparatus capable of evaluating process performance A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a chamber is supplied from a high-frequency power supply source to the cha... | 08/16/2005 |
| 6919107 | Method and device for treating surfaces using a glow discharge plasma In a process for treating a surface with the aid of a glow discharge plasma sustained in a gas of substantially ambient pressure between two electrodes (10, 10′) unwanted effects of plasma filaments occurring in such a plasma are prevented by positioning th... | 07/19/2005 |
| 6916398 | Gas delivery apparatus and method for atomic layer deposition One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or mo... | 07/12/2005 |
| 6915760 | Plasma processing apparatus The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner th... | 07/12/2005 |
| 6911391 | Integration of titanium and titanium nitride layers Embodiments of the present invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set of compounds, providing one or more cycles of a second set of... | 06/28/2005 |
