Quotables
"Rail travel at high speeds is not possible because passengers, unable to breathe, would die of asphyxia."
Dionysius Lardner, Professor of Natural Philosophy and Astronomy at University College, London ; 1830
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8176871 | Substrate processing apparatus Disclosed is a substrate processing apparatus, including: a processing space to provide a space in which a substrate is to be processed; a heating member to heat the processing space; a gas supply member to supply at least first and second processing gases to the pr... | 05/15/2012 |
| 8166914 | Plasma processing apparatus of batch type A plasma processing apparatus of the batch type includes a tubular process container having a closed end and an open end opposite to each other, and a process field for accommodating target substrates, the process container including a tubular insulating body. The a... | 05/01/2012 |
| 8161906 | Clamped showerhead electrode assembly An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which includes an inner electrode mechanically attached to a backing plate by a clamp ring and an outer electrode atta... | 04/24/2012 |
| 8136481 | Device for plasma treatment at atmospheric pressure A device (1) for plasma treatment comprises an electrode (2) having a surface (14) covered by a dielectric barrier (3), and an AC high voltage source (6) for applying an AC high voltage to the electrode (2) to bring about a ... | 03/20/2012 |
| 8069817 | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses Showerhead electrodes for a semiconductor material processing apparatus are disclosed. An embodiment of the showerhead electrodes includes top and bottom electrodes bonded to each other. The top electrode includes one or more plenums. The bottom electrode includes a... | 12/06/2011 |
| 8061299 | Formation of photoconductive and photovoltaic films A deposition system includes a vacuum reaction chamber with a substrate holder positioned in it. The substrate holder is for carrying a substrate therein. A sputtering apparatus is also positioned in the vacuum reaction chamber. The sputtering apparatus is configure... | 11/22/2011 |
| 8056503 | Plasma procesor and plasma processing method An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric pot... | 11/15/2011 |
| 8056504 | Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates A vacuum vessel and at least two electrodes define an internal process space. At least one power supply is connectable with the electrodes. A substrate holder holds a substrate to be treated in the internal process space. At least one of the electrodes has along a f... | 11/15/2011 |
| 8047158 | Substrate processing apparatus and reaction container A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces su... | 11/01/2011 |
| 8033245 | Substrate support bushing An apparatus for supporting a substrate within a processing chamber is provided. In one aspect, a substrate support member is provided comprising a housing having a bore formed therethrough, a support pin at least partially disposed within the bore, and a plurality ... | 10/11/2011 |
| 8033246 | Arc suppression An arc suppression arrangement suppresses arcs in a gas discharge device that is operated with an alternating voltage from a power supply. The arc suppression arrangement includes an arc suppression device and an arc identification device that controls the arc suppr... | 10/11/2011 |
| 8028652 | Batch-type remote plasma processing apparatus A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of ... | 10/04/2011 |
| 8028653 | System, method and apparatus for filament and support used in plasma-enhanced chemical vapor deposition for reducing carbon voids on media disks in disk drives A filament post used in plasma-enhanced chemical vapor deposition has an outer shell and an inner post. An electrical potential is applied only to the inner post to ensure that there is no impact on the plasma density and the carbon film properties. The inner post a... | 10/04/2011 |
| 8020514 | Batch-type remote plasma processing apparatus A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of ... | 09/20/2011 |
| 7992518 | Silicon carbide gas distribution plate and RF electrode for plasma etch chamber A showerhead for use in a capacitively-coupled plasma chamber and made of low resistivity bulk layer coated with CVD SiC. The bulk low resitivity material may be, for example, graphite, Silicon Carbide (SiC), converted graphite, SiC+C, etc. Sintered SiC may be used ... | 08/09/2011 |
| 7963248 | Plasma generator, substrate treating apparatus including the same and substrate treating method A plasma generator includes a gas supply member configured to supply source gas and a plurality of electrodes for generating plasma using the source gas. The plurality of electrodes have a long rod shape in a first direction and are arranged abreast in a second dire... | 06/21/2011 |
| 7958842 | Substrate processing apparatus A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing ch... | 06/14/2011 |
| 7900580 | Substrate processing apparatus and reaction container A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces su... | 03/08/2011 |
| 7895970 | Structure for plasma processing chamber, plasma processing chamber, plasma processing apparatus, and plasma processing chamber component A structure for a plasma processing chamber which makes it possible to control the potential therein and simplify the construction of the plasma processing chamber. A gas-introducing showerhead 34 is disposed in the plasma processing chamber 10 includi... | 03/01/2011 |
| 7886689 | Plasma processing apparatus To prevent occurrence of arcing caused by difference of thermal expansion between the electrode and the solid dielectric in a plasma processing apparatus. The bottom part of a casing 20 of processing units 10L, 10R is open, this opening p... | 02/15/2011 |
| 7886688 | Plasma processing apparatus To provide a plasma processing apparatus capable of enhancing insulation between an electrode and a casing and adjusting the temperature of the electrode from outside. An electrode 30 is provided at its discharge space forming surface with a solid diel... | 02/15/2011 |
| 7886687 | Plasma processing apparatus A plasma processing apparatus for generating plasma in a chamber maintained in a vacuum state and processing a substrate using the plasma. The plasma processing apparatus includes a refrigerant channel for circulating a refrigerant formed in a shower head, thereby e... | 02/15/2011 |
| 7886690 | Plasma source A plasma source is described. The source includes a reactive impedance element formed from a plurality of electrodes. By providing such a plurality of electrodes and powering adjacent electrodes out of phase with one another, it is possible to improve the characteri... | 02/15/2011 |
| 7861668 | Batch-type remote plasma processing apparatus A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of ... | 01/04/2011 |
| 7861667 | Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for pr... | 01/04/2011 |
| 7849815 | Plasma processing apparatus This application discloses a practical plasma processing apparatus capable of plasma confinement without plasma-density non-uniformity and electric power loss. The apparatus comprises a plasma shield that surrounds a plasma generation region to prevent plasma from d... | 12/14/2010 |
| 7845309 | Ultra high speed uniform plasma processing system An apparatus for processing a substrate with a plasma. The apparatus includes first and second electrodes positioned with a spaced apart relationship. A separating ring has a vacuum-tight engagement with confronting surfaces of the first electrode and the second ele... | 12/07/2010 |
| 7827931 | Plasma processor electrode and plasma processor A plasma processor electrode includes a support member disposed to face to an electrode that holds a substrate to be treated, an electrode plate fixed to the support member and equipped with gas injection holes and a screw hole open and facing to the support member ... | 11/09/2010 |
| 7819081 | Plasma film forming system In a plasma film forming apparatus, two first electrodes 51 connected to a power source 4 and two grounded second electrodes 52 are arranged in the order of the second electrode 52, the first electrode 51, the first electrode 51... | 10/26/2010 |
| 7802539 | Semiconductor processing equipment having improved particle performance A ceramic part having a surface exposed to the interior space, the surface having been shaped and plasma conditioned to reduce particles thereon by contacting the shaped surface with a high intensity plasma. The ceramic part can be made by sintering or machining a c... | 09/28/2010 |
| 7798096 | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool A batch processing chamber includes a chamber housing, a substrate boat for containing a batch of substrates in a process region, and an excitation assembly for exciting species of a processing gas. The excitation assembly is positioned within the chamber housing an... | 09/21/2010 |
| 7798097 | Plasma booster for plasma treatment installation An arrangement for boosting or igniting a glow discharge plasma for coating workpieces has at least one hollow body of an electrically conductive material formed such that when an electric signal is applied to the hollow body at least in a certain pressure and volta... | 09/21/2010 |
| 7784426 | Plasma reactor for the treatment of large size substrates A radiofrequency plasma reactor with first and second spaced electrodes has a concave surface facing a substrate supporting surface. A process area between the electrodes has a gas inlet for a process gas. A radiofrequency generator for frequencies greater than 13.5... | 08/31/2010 |
| 7779784 | Apparatus and method for plasma assisted deposition Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a powe... | 08/24/2010 |
| 7762209 | Plasma processing apparatus The plasma processing apparatus M2 has a first and a second elongate electrodes 30, 30. A processing gas is introduced from a first aperture 30b formed between upper first edges of the electrodes 30, 30 into a gap 30a | 07/27/2010 |
| 7757633 | Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma A magnetically enhanced plasma is produced with a permanent magnet assembly adjacent to a radio frequency (RF) biased wafer support electrode in a vacuum processing chamber of a semiconductor wafer processing apparatus. An annular peripheral region is provided on th... | 07/20/2010 |
| 7743731 | Reduced contaminant gas injection system and method of using A gas injection system includes a diffuser to distribute a process gas in a processing chamber. The gas injection system may be utilized in a polysilicon etching system involving corrosive process gases. ... | 06/29/2010 |
| 7743730 | Apparatus for an optimized plasma chamber grounded electrode assembly An electrode assembly configured to provide a ground path for a plasma processing chamber of a plasma processing system is disclosed. The apparatus includes an electrode configured to be exposed to a plasma. The apparatus also includes a heater plate disposed above ... | 06/29/2010 |
| 7721673 | Hollow cathode discharging apparatus The present invention provides a hollow cathode discharging apparatus including a hollow anode electrode, a hollow cathode electrode insulatedly fixed in the hollow anode electrode, a gas distribution pipe fixed in the hollow cathode electrode. The hollow anode elec... | 05/25/2010 |
| 7712435 | Plasma processing apparatus with insulated gas inlet pore A plasma processing apparatus includes: a reaction chamber; two electrodes provided inside the reaction chamber for generating a plasma therebetween, wherein at least one of the electrodes has at least one gas inlet pore through which a gas is introduced into the re... | 05/11/2010 |
