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| Number | Title | Issue Date |
| 8152926 | Vacuum processing apparatus Disclosed herein is a vacuum processing apparatus for performing a desired process for a substrate after establishing a vacuum atmosphere therein. More particularly, the vacuum processing apparatus includes a vacuum chamber, which is divided into a chamber body and ... | 04/10/2012 |
| 8152925 | Baffle plate and substrate processing apparatus A baffle plate, provided in a processing chamber for processing a substrate therein such that the baffle plate is disposed around a mounting table for mounting the substrate thereon, has a plurality of gas exhaust holes, through which a gas is exhausted from the pro... | 04/10/2012 |
| 8147614 | Multi-gas flow diffuser Embodiments of the disclosure generally provide a method and apparatus for processing a substrate in a vacuum process chamber. In one embodiment a vacuum process chamber is provided that includes a chamber body and lid disposed on the chamber body. A blocker plate i... | 04/03/2012 |
| 8142567 | Vacuum processing apparatus A vacuum processing apparatus includes a member having a gas passage formed in a center between the pressure adjusting valve of an exhaust system and a turbo-molecular pump, and a particle dispersion prevention unit having plural stationary blades formed to be tilte... | 03/27/2012 |
| 8142568 | Apparatus for synthesizing a single-wall carbon nanotube array An apparatus for synthesizing a single-wall carbon nanotube array, includes a reactor, a local heating device, a gaseous carbon supplier, and a reactant gas supplier. The reactor includes a reaction zone receiving a catalyst. The local heating device is configured f... | 03/27/2012 |
| 8137463 | Dual zone gas injection nozzle The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an appara... | 03/20/2012 |
| 8137462 | Precursor delivery system A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve... | 03/20/2012 |
| 8133322 | Apparatus for inverted multi-wafer MOCVD fabrication A semiconductor fabrication reactor according to the invention comprises a rotatable susceptor mounted to the top of a reactor chamber. One or more wafers are mounted to a surface of the susceptor and the rotation of the susceptor causes the wafers to rotate within ... | 03/13/2012 |
| 8128750 | Aluminum-plated components of semiconductor material processing apparatuses and methods of manufacturing the components Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An... | 03/06/2012 |
| 8128751 | Film-forming apparatus A film-forming apparatus of the invention is a film-forming apparatus that includes: a processing container that defines a chamber, a pedestal arranged in the chamber, on which a substrate to be processed can be placed, a showerhead provided opposite to the pedestal... | 03/06/2012 |
| 8123860 | Apparatus for cyclical depositing of thin films An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases i... | 02/28/2012 |
| 8118937 | Semiconductor thin film, thin film transistor, method for manufacturing same, and manufacturing equipment of semiconductor thin film A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film t... | 02/21/2012 |
| 8118936 | Method and apparatus for an improved baffle plate in a plasma processing system The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baff... | 02/21/2012 |
| 8118935 | Mixing box, and apparatus and method for producing films A thin film manufacturing system, wherein a stage for placing a substrate thereon is disposed within a vacuum reactor and a gas head for supplying a film forming gas to a central area on a top face of the vacuum reactor is arranged so that the gas head is opposed to... | 02/21/2012 |
| 8118938 | Lower liner with integrated flow equalizer and improved conductance A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is config... | 02/21/2012 |
| 8114219 | Systems and methods for forming metal oxide layers A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor... | 02/14/2012 |
| 8110043 | Apparatus and method for applying coatings onto the interior surfaces of components and related structures produced therefrom A methodology and system for applying coatings onto the interior surfaces of components, includes a vapor creation device, a vacuum chamber having a moderate gas pressure and an inert gas jet having controlled velocity and flow fields. The gas jet is created by a ra... | 02/07/2012 |
| 8097083 | Operating method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof An operating method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof are provided. The present invention reduces the time needed for filling the manufacturing gas into the large volume manufacturing cavity. Therefore, the... | 01/17/2012 |
| 8092599 | Movable injectors in rotating disc gas reactors A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more subs... | 01/10/2012 |
| 8092598 | Apparatus and method for thin film deposition Disclosed herein is a thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates rested on a susceptor. The apparatus comprises: a gas supply means for supplying a plurality of gases to the inside of the reaction ch... | 01/10/2012 |
| 8088223 | System for control of gas injectors A substrate processing system has computer controlled injectors. The computer is configured to adjust a plurality of injectors, such as during deposition of a graded layer, between depositions of two different layers, or between deposition and chamber clean steps. | 01/03/2012 |
| 8083853 | Plasma uniformity control by gas diffuser hole design Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downst... | 12/27/2011 |
| 8083854 | Vacuum pumping circuit and machine for treating containers equipped with same The invention relates to a vacuum pumping circuit comprising: an upper chamber (34) and a lower chamber (36) that communicate via a connecting orifice (38), and comprising a valve (40) provided with a stem guided so as to slide along a ve... | 12/27/2011 |
| 8080107 | Showerhead electrode assembly for plasma processing apparatuses A showerhead electrode assembly of a plasma processing apparatus includes a thermal control plate attached to a showerhead electrode, and a top plate attached to the thermal control plate. At least one thermal bridge is provided between opposed surfaces of the therm... | 12/20/2011 |
| 8075690 | Diffuser gravity support An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gases through ... | 12/13/2011 |
| 8075691 | Vacuum processing apparatus Disclosed herein is a vacuum processing apparatus for performing a desired process for a substrate after establishing a vacuum atmosphere therein. More particularly, the vacuum processing apparatus includes a vacuum chamber, which is divided into a chamber body and ... | 12/13/2011 |
| 8075692 | Fluid bed reactor Fluidized bed reactor systems for producing high purity silicon-coated particles are disclosed. A vessel has an outer wall, an insulation layer inwardly of the outer wall, at least one heater positioned inwardly of the insulation layer, a removable concentric liner ... | 12/13/2011 |
| 8070879 | Apparatus and method for hybrid chemical processing In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with th... | 12/06/2011 |
| 8062425 | Vapor deposition system and vapor deposition method There is provided a device or a method including a flow path switching unit which switches a first flow path for releasing the vapor deposition material evaporated from a vapor depositing source from the same into a chamber, and a second flow path for causing the va... | 11/22/2011 |
| 8057600 | Method and apparatus for an improved baffle plate in a plasma processing system The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baff... | 11/15/2011 |
| 8057599 | Substrate processing apparatus and method for manufacturing a semiconductor device A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) for... | 11/15/2011 |
| 8052795 | Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same A catalyst-enhanced chemical vapor deposition (CECVD) apparatus and a deposition method, in which tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign mater... | 11/08/2011 |
| 8052796 | CVD reactor comprising a photodiode array The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates, said device comprising a process chamber which is arranged in a reactor housing and comprises a substrate holder for receiving at least one substrate... | 11/08/2011 |
| 8048226 | Method and system for improving deposition uniformity in a vapor deposition system A processing system for treating a substrate includes a process chamber, a substrate holder, a gas distribution system, and a flow modulation element. The process chamber has a pumping system to evacuate the process chamber. The substrate holder is coupled to the pr... | 11/01/2011 |
| 8043431 | Substrate processing apparatus and method for manufacturing a semiconductor device A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) for... | 10/25/2011 |
| 8043430 | Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a... | 10/25/2011 |
| 8034175 | Apparatus and method for manufacturing semiconductor device, and electronic apparatus A method for manufacturing a semiconductor device, comprises providing a semiconductor layer deposited on a substrate with heat treatment by using a flame of a gas burner fueled by a hydrogen-and-oxygen mixed gas as a heat source. ... | 10/11/2011 |
| 8034176 | Gas distribution system for a post-etch treatment system A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a remote radical g... | 10/11/2011 |
| 8034177 | Inner electrode for barrier film formation and apparatus for film formation An inner electrode for barrier film formation is an inner electrode for barrier film formation that is inserted inside a plastic container having an opening, supplies a medium gas to the inside of the plastic container, and supplies high frequency power to an outer ... | 10/11/2011 |
| 8025731 | Gas injection system for plasma processing A plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface... | 09/27/2011 |
