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| Number | Title | Issue Date |
| 8172948 | De-fluoridation process A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A fluorine-containing conforma... | 05/08/2012 |
| 8172947 | Substrate processing apparatus and attaching/detaching method of reaction vessel To provide a substrate processing apparatus, comprising: a reaction vessel having a processing chamber inside that processes a substrate; a heating device that heats said substrate from an outer peripheral side of the reaction vessel; a lid member that closes the pr... | 05/08/2012 |
| 8172946 | Semiconductor device manufacturing apparatus and manufacturing method of semiconductor device Stagnation of gas used for substrate processing in an exhaust trap is prevented, and localized precipitation of components in the gas used for substrate processing is reduced. The proposed apparatus includes a substrate processing chamber (cylindrical space 250 | 05/08/2012 |
| 8168001 | Film-forming apparatus and film-forming method Film-forming apparatus including a film-forming vacuum chamber having a stage for a substrate, a chamber for mixing gas comprising a raw gas and a reactive gas connected to the film-forming chamber, a chamber for vaporizing the raw material, and a gas head for intro... | 05/01/2012 |
| 8163087 | Plasma enhanced atomic layer deposition system and method A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first proc... | 04/24/2012 |
| 8163089 | Vapor deposition apparatus and process for continuous deposition of a thin film layer on a substrate An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material. A hea... | 04/24/2012 |
| 8163088 | Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates To densify thin porous substrates (1) by chemical vapor infiltration, the invention proposes using loading tooling (10) comprising a tubular duct (10) disposed between first and second plates (12, 13) and around which the thin substrates ... | 04/24/2012 |
| 8152926 | Vacuum processing apparatus Disclosed herein is a vacuum processing apparatus for performing a desired process for a substrate after establishing a vacuum atmosphere therein. More particularly, the vacuum processing apparatus includes a vacuum chamber, which is divided into a chamber body and ... | 04/10/2012 |
| 8152925 | Baffle plate and substrate processing apparatus A baffle plate, provided in a processing chamber for processing a substrate therein such that the baffle plate is disposed around a mounting table for mounting the substrate thereon, has a plurality of gas exhaust holes, through which a gas is exhausted from the pro... | 04/10/2012 |
| 8152923 | Gas treatment systems An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117)... | 04/10/2012 |
| 8152922 | Gas mixer and manifold assembly for ALD reactor A system and method for mixing a plurality of gases for an atomic layer deposition (ALD) reactor. The mixer is configured to mix the plurality of gases while minimizing the potential for re-circulation within the mixer. The mixer is further configured to maintain th... | 04/10/2012 |
| 8152924 | CVD reactor comprising a gas inlet member The invention relates to a device for depositing at least one layer on a substrate by means of a process gas which is introduced through a flow channel (4), extending in a vertical direction, of a gas inlet member (3), fixed in place with respect to a ... | 04/10/2012 |
| 8147614 | Multi-gas flow diffuser Embodiments of the disclosure generally provide a method and apparatus for processing a substrate in a vacuum process chamber. In one embodiment a vacuum process chamber is provided that includes a chamber body and lid disposed on the chamber body. A blocker plate i... | 04/03/2012 |
| 8142567 | Vacuum processing apparatus A vacuum processing apparatus includes a member having a gas passage formed in a center between the pressure adjusting valve of an exhaust system and a turbo-molecular pump, and a particle dispersion prevention unit having plural stationary blades formed to be tilte... | 03/27/2012 |
| 8142568 | Apparatus for synthesizing a single-wall carbon nanotube array An apparatus for synthesizing a single-wall carbon nanotube array, includes a reactor, a local heating device, a gaseous carbon supplier, and a reactant gas supplier. The reactor includes a reaction zone receiving a catalyst. The local heating device is configured f... | 03/27/2012 |
| 8137463 | Dual zone gas injection nozzle The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an appara... | 03/20/2012 |
| 8137462 | Precursor delivery system A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve... | 03/20/2012 |
| 8133322 | Apparatus for inverted multi-wafer MOCVD fabrication A semiconductor fabrication reactor according to the invention comprises a rotatable susceptor mounted to the top of a reactor chamber. One or more wafers are mounted to a surface of the susceptor and the rotation of the susceptor causes the wafers to rotate within ... | 03/13/2012 |
| 8128750 | Aluminum-plated components of semiconductor material processing apparatuses and methods of manufacturing the components Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An... | 03/06/2012 |
| 8128751 | Film-forming apparatus A film-forming apparatus of the invention is a film-forming apparatus that includes: a processing container that defines a chamber, a pedestal arranged in the chamber, on which a substrate to be processed can be placed, a showerhead provided opposite to the pedestal... | 03/06/2012 |
| 8123860 | Apparatus for cyclical depositing of thin films An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases i... | 02/28/2012 |
| 8118938 | Lower liner with integrated flow equalizer and improved conductance A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is config... | 02/21/2012 |
| 8118937 | Semiconductor thin film, thin film transistor, method for manufacturing same, and manufacturing equipment of semiconductor thin film A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film t... | 02/21/2012 |
| 8118935 | Mixing box, and apparatus and method for producing films A thin film manufacturing system, wherein a stage for placing a substrate thereon is disposed within a vacuum reactor and a gas head for supplying a film forming gas to a central area on a top face of the vacuum reactor is arranged so that the gas head is opposed to... | 02/21/2012 |
| 8118936 | Method and apparatus for an improved baffle plate in a plasma processing system The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baff... | 02/21/2012 |
| 8114219 | Systems and methods for forming metal oxide layers A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor... | 02/14/2012 |
| 8110043 | Apparatus and method for applying coatings onto the interior surfaces of components and related structures produced therefrom A methodology and system for applying coatings onto the interior surfaces of components, includes a vapor creation device, a vacuum chamber having a moderate gas pressure and an inert gas jet having controlled velocity and flow fields. The gas jet is created by a ra... | 02/07/2012 |
| 8097083 | Operating method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof An operating method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof are provided. The present invention reduces the time needed for filling the manufacturing gas into the large volume manufacturing cavity. Therefore, the... | 01/17/2012 |
| 8092599 | Movable injectors in rotating disc gas reactors A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more subs... | 01/10/2012 |
| 8092598 | Apparatus and method for thin film deposition Disclosed herein is a thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates rested on a susceptor. The apparatus comprises: a gas supply means for supplying a plurality of gases to the inside of the reaction ch... | 01/10/2012 |
| 8088223 | System for control of gas injectors A substrate processing system has computer controlled injectors. The computer is configured to adjust a plurality of injectors, such as during deposition of a graded layer, between depositions of two different layers, or between deposition and chamber clean steps. | 01/03/2012 |
| 8083854 | Vacuum pumping circuit and machine for treating containers equipped with same The invention relates to a vacuum pumping circuit comprising: an upper chamber (34) and a lower chamber (36) that communicate via a connecting orifice (38), and comprising a valve (40) provided with a stem guided so as to slide along a ve... | 12/27/2011 |
| 8083853 | Plasma uniformity control by gas diffuser hole design Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downst... | 12/27/2011 |
| 8080107 | Showerhead electrode assembly for plasma processing apparatuses A showerhead electrode assembly of a plasma processing apparatus includes a thermal control plate attached to a showerhead electrode, and a top plate attached to the thermal control plate. At least one thermal bridge is provided between opposed surfaces of the therm... | 12/20/2011 |
| 8075691 | Vacuum processing apparatus Disclosed herein is a vacuum processing apparatus for performing a desired process for a substrate after establishing a vacuum atmosphere therein. More particularly, the vacuum processing apparatus includes a vacuum chamber, which is divided into a chamber body and ... | 12/13/2011 |
| 8075692 | Fluid bed reactor Fluidized bed reactor systems for producing high purity silicon-coated particles are disclosed. A vessel has an outer wall, an insulation layer inwardly of the outer wall, at least one heater positioned inwardly of the insulation layer, a removable concentric liner ... | 12/13/2011 |
| 8075690 | Diffuser gravity support An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gases through ... | 12/13/2011 |
| 8070879 | Apparatus and method for hybrid chemical processing In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with th... | 12/06/2011 |
| 8062425 | Vapor deposition system and vapor deposition method There is provided a device or a method including a flow path switching unit which switches a first flow path for releasing the vapor deposition material evaporated from a vapor depositing source from the same into a chamber, and a second flow path for causing the va... | 11/22/2011 |
| 8057599 | Substrate processing apparatus and method for manufacturing a semiconductor device A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) for... | 11/15/2011 |
