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| Number | Title | Issue Date |
| 8137460 | Manufacturing method of GaN thin film template substrate, GaN thin film template substrate and GaN thick film single crystal Provided are a manufacturing method of a GaN single crystal in which the film thickness of the GaN single crystal can be controlled accurately, even when a hydride vapor phase epitaxy is applied; a GaN thin film template substrate which is suitable for growing a GaN... | 03/20/2012 |
| 8092597 | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials Method for producing a III-N (AlN, GaN, AlxGa(1-x)N) crystal by Vapor Phase Epitaxy (VPE), the method comprising: providing a reactor having: a growth zone for growing a III-N crystal; a substrate holder located in the growth zone that supports... | 01/10/2012 |
| 8092596 | Bulk GaN and AlGaN single crystals Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bu... | 01/10/2012 |
| 7556688 | Method for achieving low defect density AlGaN single crystal boules A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desire... | 07/07/2009 |
| 7501023 | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates... | 03/10/2009 |
| 7438761 | Apparatus for fabricating a III-V nitride film and a method for fabricating the same A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III-V nitride ... | 10/21/2008 |
| 7427555 | Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy Highly planar non-polar GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques. ... | 09/23/2008 |
| 7402206 | Method of synthesizing a compound of the formula MAX, film of the compound and its use A method of synthesizing or growing a compound having the general formula Mn+1AXn(16) where M is a transition metal, n is 1, 2, 3 or higher, A is an A-group element and X is carbon, nitrogen or both, which comprises the step of exposing ... | 07/22/2008 |
| 7399357 | Atomic layer deposition using multilayers A method for the controlled growth of thin films by atomic layer deposition by making use of multilayers and using energetic radicals to facilitate the process is described in this invention. In this method, a first reactant is admitted into the reaction chamber vol... | 07/15/2008 |
| 7384481 | Method of forming a rare-earth dielectric layer Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide t... | 06/10/2008 |
| 7357837 | GaN single crystal substrate and method of making the same The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing st... | 04/15/2008 |
| 7348226 | Method of forming lattice-matched structure on silicon and structure formed thereby A method (and resultant structure) of forming a semiconductor structure, includes processing an oxide to have a crystalline arrangement, and depositing an amorphous semiconductor layer on the oxide by one of evaporation and chemical vapor deposition (CVD). ... | 03/25/2008 |
| 7323256 | Large area, uniformly low dislocation density GaN substrate and process for making the same Large area, uniformly low dislocation density single crystal III-V nitride material, e.g., gallium nitride having a large area of greater than 15 cm2, a thickness of at least 1 mm, an average dislocation density not exceeding 5E5 cm−2, and a ... | 01/29/2008 |
| 7294207 | Gas-admission element for CVD processes, and device The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates. At least two process gases are led into a process chamber of a reactor separately from each other, through a gas inlet mechanism above a heated s... | 11/13/2007 |
| 7282158 | Method of processing a workpiece This invention relates to a method of processing a workpiece in a chamber. Initially a surface of the workpiece is treated by a process which includes supplying a reactive gas to the chamber through a first gas supply and the surface is then further treated using a ... | 10/16/2007 |
| 7250083 | ALD method and apparatus A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substra... | 07/31/2007 |
| 7204885 | Deposition system to provide preheating of chemical vapor deposition precursors Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction ... | 04/17/2007 |
| 7147713 | Phase controlled sublimation A method of forming a silicon carbon compound. A silicon source is introduced into an environment. Silicon particles are formed therefrom. One or more hydrocarbons are introduced into the environment separately from the silicon source, thereby forming one or more si... | 12/12/2006 |
| 7135073 | Method and system for semiconductor crystal production with temperature management What is described here is a method and a temperature management and reaction chamber system for the production of nitrogenous semiconductor crystal materials of the form AXBYCZNVMW, wherein A, B, C represent ele... | 11/14/2006 |
| 7128785 | Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates The invention relates to a device and to a method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates. The device comprises a heated reaction chamber with a substrate support that receives at least one substrate; on... | 10/31/2006 |
| 7118781 | Methods for controlling formation of deposits in a deposition system and deposition methods including the same A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contigu... | 10/10/2006 |
| 7097707 | GaN boule grown from liquid melt using GaN seed wafers A method of making a single crystal GaN boule, comprising contacting a GaN seed wafer with a GaN source environment under process conditions including a thermal gradient in the GaN source environment producing growth of gallium nitride on the GaN seed wafer, thereby... | 08/29/2006 |
| 7094289 | Method for manufacturing highly-crystallized oxide powder A method for manufacturing a highly-crystallized oxide powder, wherein an oxide powder is produced by ejecting a starting material powder containing at least one metal element and/or semimetal element, which will become a constituent component of the oxide, into a r... | 08/22/2006 |
| 7088755 | Nitride-base semiconductor laser device A nitride-based semiconductor laser device capable of attaining stabilization of a laser beam and inhibiting a threshold current and an operating current from increase is provided. This nitride-based semiconductor laser device comprises a substrate consisting of eit... | 08/08/2006 |
| 7084049 | Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130 of a predetermined thickness and a buried insulator 120, ... | 08/01/2006 |
| 7033439 | Apparatus for fabricating a III-V nitride film and a method for fabricating the same A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III–V nitrid... | 04/25/2006 |
| 7029724 | Composition and method for forming doped A-site deficient thin-film manganate layers on a substrate A method of forming an A site deficient thin film manganate material on a substrate from corresponding precursor(s), comprising liquid delivery and flash vaporization thereof to yield a precursor vapor, and transporting the precursor vapor to a chemical vapor deposi... | 04/18/2006 |
| 7017514 | Method and apparatus for plasma optimization in water processing An apparatus for managing plasma in wafer processing operations is disclosed which includes a housing having an internal region defined by an inner wall. The housing has an input port for supplying a plasma into the housing at a first end and an output port at a sec... | 03/28/2006 |
| 6998097 | High pressure chemical vapor trapping system A high pressure trapping system is provided to collect chemical vapor by-products in successive stages through chemical reactions conducted at progressively colder temperatures. A hot trap receives chemical vapor exhaust and collects a first waste, typically a solid... | 02/14/2006 |
| 6972050 | Method for depositing in particular crystalline layers, and device for carrying out the method The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates, in a process chamber of a CVD reactor. At least one first and one second reaction gas are each led into a gas outlet area in an input area of the... | 12/06/2005 |
| 6969426 | Forming improved metal nitrides Method and apparatus are provided for forming metal nitride (MN), wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and then contacting MI with ammonia to form the MN in a process of reduced or no toxicity. Such method ... | 11/29/2005 |
| 6962624 | Method and device for depositing in particular organic layers using organic vapor phase deposition The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor, a non-gaseous starting material that is stored in a source in the form of a container is transported from said source to a substrate by a carrier gas in ga... | 11/08/2005 |
| 6957624 | Apparatus and a method for forming an alloy layer over a substrate One embodiment of the invention involves introducing at least two metals into a chamber for forming an alloy layer over a substrate. This is accomplished by a variety of methods. In one embodiment, at least two metals are mixed and introduced into a chamber in which... | 10/25/2005 |
| 6955719 | Manufacturing methods for semiconductor devices with multiple III-V material layers A method for fabricating semiconductor devices with thin (e.g., submicron) and/or thick (e.g., between 1 micron and 100 microns thick) Group III nitride layers during a single epitaxial run is provided, the layers exhibiting sharp layer-to-layer interfaces. Accordin... | 10/18/2005 |
| 6936357 | Bulk GaN and ALGaN single crystals Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bu... | 08/30/2005 |
| 6821341 | Precursor for use in preparing layers on substrates A vaporizing apparatus and method for providing a vaporized liquid precursor to a process chamber in a vapor deposition process includes a microdroplet forming device for generating microdroplets from a liquid precursor and a heated housing defining a vaporization z... | 11/23/2004 |
| 6808803 | Molecular epitaxy method and compositions Organic superlattices formed by molecular layer epitaxy (MLE), and a novel MLE method of forming organic molecular monolayers are disclosed. The method utilized covalent linkage, combined with self-cleaning layer growth, to form pi-stacked, ordered, oriented monomol... | 10/26/2004 |
| 6783849 | Molecular layer epitaxy method and compositions Organic superlattices fromed by molecular layer epitaxy (MLE), and a novel MLE method of forming organic molecular monolayers are disclosed. The method utilized covalent linkage, combined with self-cleaning layer growth, to form pi-stacked, ordered, oritented monomo... | 08/31/2004 |
| 6773508 | Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same To economically and easily fabricate a single crystal silicon carbide thin film. The apparatus for fabricating a single crystal silicon carbide thin film comprises a film-formation chamber 200 adapted to receive a SOI substrate 100 for film-formation, ... | 08/10/2004 |
| 6660083 | Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE A method and apparatus for fabricating thin Group III nitride layers as well as Group III nitride layers that exhibit sharp layer-to-layer interfaces are provided. According to one aspect, an HVPE reactor includes one or more gas inlet tubes adjacent to t... | 12/09/2003 |
