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| Number | Title | Issue Date |
| 7691202 | Ultraviolet light-emitting device in which p-type semiconductor is used An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impur... | 04/06/2010 |
| 7452420 | Apparatus and method for diamond production An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measur... | 11/18/2008 |
| 7384481 | Method of forming a rare-earth dielectric layer Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide t... | 06/10/2008 |
| 7377978 | Method for producing silicon epitaxial wafer and silicon epitaxial wafer It is to provide a method for producing a silicon epitaxial wafer, which can prevent fine unevenness from occurring on a rear main surface of a silicon epitaxial wafer and which suppresses the haze level of the whole rear main surface to 50 ppm or less. A met... | 05/27/2008 |
| 7371332 | Uniform etch system Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, wher... | 05/13/2008 |
| 7371281 | Silicon carbide single crystal and method and apparatus for producing the same A growth crucible (2) for depositing on a seed crystal substrate (5) a silicon carbide single crystal (6) using a sublimate gas of a silicon carbide raw material (11) is disposed inside of an outer crucible (1). During the course o... | 05/13/2008 |
| 7351646 | Laser annealing method and laser annealing device In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the ... | 04/01/2008 |
| 7351283 | System and method for fabricating a crystalline thin structure A crystalline thin structure (104, 204, 404) is grown on a surface (108, 228) of a substrate (112, 208, 400) by depositing molecules (136, 220) from a molecular precursor to a lateral growth front (144, 224) of the structure using ... | 04/01/2008 |
| 7341628 | Method to reduce crystal defects particularly in group III-nitride layers and substrates Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium ... | 03/11/2008 |
| 7332417 | Semiconductor structures with structural homogeneity Semiconductor structures are formed with semiconductor layers having reduced compositional variation. Top surfaces of the semiconductor layers are substantially haze-free. ... | 02/19/2008 |
| 7282158 | Method of processing a workpiece This invention relates to a method of processing a workpiece in a chamber. Initially a surface of the workpiece is treated by a process which includes supplying a reactive gas to the chamber through a first gas supply and the surface is then further treated using a ... | 10/16/2007 |
| 7270708 | Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial wafer A susceptor (10) supporting a semiconductor substrate (W) in a vapor phase growth, wherein a pocket (11) is formed on an upper surface of the susceptor to arrange the semiconductor substrate (W) inside thereof. The pocket (11) has a two-stage st... | 09/18/2007 |
| 7268895 | Inspection system and a method for inspecting a semiconductor wafer An inspection system for inspecting a wafer and an inspection method thereof are provided. The inspection system includes a rotating means for turning and arranging a wafer to an inspection position, an angle measuring means for measuring a rotational angle used by ... | 09/11/2007 |
| 7235130 | Apparatus and method for diamond production An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measur... | 06/26/2007 |
| 7189131 | High buffer gas pressure ceramic arc tube and method and apparatus for making same A ceramic arc tube for high intensity discharge (HID) lighting applications is provided wherein the arc tube contains a high buffer gas pressure. A method and apparatus for making the arc tube are also provided wherein RF induction heating is used to melt a frit mat... | 03/13/2007 |
| 7169231 | Gas distribution system with tuning gas An apparatus for providing different gases to different zones of a processing chamber is provided. A gas supply for providing an etching gas flow is provided. A flow splitter in fluid connection with the gas supply for splitting the etching gas flow from the gas sup... | 01/30/2007 |
| 7140260 | Gas flow measuring device and gas flow measuring method The present invention realizes (i) a gas flow measuring device which can measure a gas flow of a low-boiling gas in a mixed gas including two types of gasses having different boiling points, and (ii) a method of measuring a gas flow easily but highly precisely, usin... | 11/28/2006 |
| 7135073 | Method and system for semiconductor crystal production with temperature management What is described here is a method and a temperature management and reaction chamber system for the production of nitrogenous semiconductor crystal materials of the form AXBYCZNVMW, wherein A, B, C represent ele... | 11/14/2006 |
| 7128786 | Process for depositing III-V semiconductor layers on a non-III-V substrate This invention relates to a method for depositing III-V semiconductor layers on a non III-V substrate especially a sapphire, silicon or silicon oxide substrate, or another substrate containing silicon. According to said method, a III-V layer, especially a buffer lay... | 10/31/2006 |
| 7122733 | Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds The present invention provides a solar cell comprising a substrate, a first buffer layer disposed above the base layer, a second buffer layer disposed above the first buffer layer, a first boron compound layer disposed above the second buffer layer, a second boron c... | 10/17/2006 |
| 7109134 | Fusible quilt batt A fusible quilt batt. The fusible batt includes a non-woven fibrous web and a heat sealable and releasable adhesive. The adhesive is coated on the outer surface of the web and insinuates between the fibers of the web internally. The adhesive thus binds the fibers of... | 09/19/2006 |
| 7086410 | Substrate processing apparatus and substrate processing method A common solvent vapor supply source 41 and a common processing gas supply source 42 supply ozone gas and steam to a plurality of processing vessels 30A, 30B. Pressures in the processing vessels are regulated by adjusting the openings of ... | 08/08/2006 |
| 7037642 | Removing compounds from blood products with porous particles immobilized in a matrix Methods and devices are provided for reducing the concentration of low molecular weight compounds in a biological composition containing cells while substantially maintaining a desired biological activity of the biological composition. The device comprises highly po... | 05/02/2006 |
| 6974731 | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a la... | 12/13/2005 |
| 6967059 | METHOD OF REFORMING ELEMENT SURFACE, ELEMENT WITH REFORMED SURFACE, METHOD OF MANUFACTURING ELEMENT WITH REFORMED SURFACE, SURFACE TREATMENT LIQUID FOR FORMING REFORMED SURFACE, AND METHOD OF MANUFACTURING SURFACE TREATMENT LIQUID A surface reforming method capable of efficiently carrying out a sustainable, even reforming treatment on a prescribed surface part of an element, a surface treatment liquid to be employed for the above-described method, and an element having a reformed surface trea... | 11/22/2005 |
| 6955719 | Manufacturing methods for semiconductor devices with multiple III-V material layers A method for fabricating semiconductor devices with thin (e.g., submicron) and/or thick (e.g., between 1 micron and 100 microns thick) Group III nitride layers during a single epitaxial run is provided, the layers exhibiting sharp layer-to-layer interfaces. Accordin... | 10/18/2005 |
| 6953602 | Pattern coated adhesive article The invention relates to a adhesive article comprising at least one backing layer with a first and second surface and a pressure sensitive adhesive layer adhered first surface of the backing layer in a pattern, wherein the pattern of the adhesive layer has an adhesi... | 10/11/2005 |
| 6951713 | Absorbing pathogen-inactivating compounds with porous particles immobilized in a matrix Methods and devices are provided for reducing the concentration of low molecular weight compounds in a biological composition, while substantially maintaining a desired biological activity of the biological composition. The device comprises highly porous adsorbent p... | 10/04/2005 |
| 6932866 | Method for depositing in particular crystalline layers The invention relates to a method and a device for depositing especially crystalline layers on especially crystalline substrates in a process chamber of a reactor housing having a water-cooled wall. The floor of said process chamber is heated. At least one reaction ... | 08/23/2005 |
| 6911234 | Chemical vapor deposition apparatus and method Chemical vapor deposition apparatus and method are provided with coating gas distribution and exhaust systems that provide more uniform coating gas temperature and coating gas flow distribution among a plurality of distinct coating zones disposed along the length of... | 06/28/2005 |
| 6905547 | Method and apparatus for flexible atomic layer deposition An apparatus with a processing chamber subjects a substrate to atomic layer deposition and deposits a film layer. The processing chamber includes at least a first gas switching port. A gas switching manifold is coupled to the processing chamber and configured to mix... | 06/14/2005 |
| 6902620 | Atomic layer deposition systems and methods Atomic layer deposition systems and methods are disclosed utilizing a multi-wafer sequential processing chamber. The process gases are sequentially rotated among the wafer stations to deposit a portion of a total deposition thickness on each wafer at each station. A... | 06/07/2005 |
| 6858078 | Apparatus and method for diamond production An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measur... | 02/22/2005 |
| 6841001 | Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures Semiconductor structure and method of fabricating a semiconductor structure are provided that include a substrate having a first in-plane unstrained lattice constant, a first layer comprising a first semiconductor material on the substrate and having a second in-pla... | 01/11/2005 |
| 6812157 | Apparatus for atomic layer chemical vapor deposition An atomic layer deposition (ALD) reactor (13) is disclosed that includes a substantially cylindrical chamber (15) and a wafer substrate (22) mounted within the chamber (15). The ALD reactor (13) further includes at least one inject... | 11/02/2004 |
| 6773507 | Apparatus and method for fast-cycle atomic layer deposition Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement... | 08/10/2004 |
| 6749685 | Silicon carbide sublimation systems and associated methods Methods of growing silicon carbide are provided in which an electric arc is used to sublime a silicon carbide source material. In these embodiments, a silicon carbide seed crystal is introduced into a sublimation system, along with first and second electrodes that a... | 06/15/2004 |
| 6689210 | Apparatus for growing thin films The invention relates to an apparatus for growing thin films onto the surface of a substrate by exposing the substrate to alternately repeated surface reactions of vapor-phase reactants. The apparatus comprises at least one process chamber having a tightl... | 02/10/2004 |
| 6685774 | Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition A method of growing epitaxial layers on a wafer is provided and includes providing a wafer carrier having a surface for retaining the wafer; placing the wafer on the wafer-retaining surface of the wafer carrier while the wafer carrier is in a loading posi... | 02/03/2004 |
| 6660083 | Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE A method and apparatus for fabricating thin Group III nitride layers as well as Group III nitride layers that exhibit sharp layer-to-layer interfaces are provided. According to one aspect, an HVPE reactor includes one or more gas inlet tubes adjacent to t... | 12/09/2003 |
