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| Number | Title | Issue Date |
| 8133321 | Process for producing silicon carbide single crystal A process for producing a silicon carbide single crystal in which a silicon carbide single crystal layer is homo-epitaxially or hetero-epitaxially grown on a surface of a single crystal substrate, wherein a plurality of substantially parallel undulation ridges that ... | 03/13/2012 |
| 7794542 | Bulk single crystal gallium nitride and method of making same A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; ... | 09/14/2010 |
| 7749325 | Method of producing gallium nitride (GaN) independent substrate, method of producing GaN crystal body, and method of producing GaN substrate A method of producing a separated GaN crystal body grown by vapor phase epitaxy on a substrate made of material different from GaN is provided. In this method, a nitride deposit is formed during the growth on a periphery of the substrate and GaN crystal body. The pr... | 07/06/2010 |
| 7641736 | Method of manufacturing SiC single crystal wafer A method of manufacturing an SiC single crystal wafer according to the present invention includes the steps of: (a) preparing an SiC single crystal wafer 10 with a mirror-polished surface; (b) oxidizing the surface of the SiC single crystal wafer 10 wi... | 01/05/2010 |
| 7594967 | Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy A semiconductor structure including a cap layer formed over a semiconductor substrate having a rough edge, which discourages formation of dislocation pile-up defects. ... | 09/29/2009 |
| 7544249 | Large-diameter SiC wafer and manufacturing method thereof From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer. Polycrystal SiC is grown from at least one surface side of a small-diameter a-S... | 06/09/2009 |
| 7481882 | Method for forming a thin film A method for forming a film includes forming the film on a substrate, followed by performing a first annealing of the film at a temperature lower than a crystallization temperature of the film. A second annealing of the film is performed at a temperature higher that... | 01/27/2009 |
| 7468103 | Method of manufacturing gallium nitride-based single crystal substrate Disclosed herein is a method of manufacturing a gallium nitride-based (AlxInyGa(1−x−y)N, where 0≦x≦1, 0≦y≦1, 0≦x+y≦1) single crystal substrate. The method comprises the steps of preparing a ZnO substrate, primarily gr... | 12/23/2008 |
| 7438790 | Electrode for electrolysis and process for producing the same The present invention provides an electrode for electrolysis including: a conductive substrate; and a conductive diamond formed on a surface of the conductive substrate, the conductive substrate having at least one surface shape selected from the group consisting of... | 10/21/2008 |
| 7419546 | Gas diffusion electrodes, membrane-electrode assemblies and method for the production thereof A method for forming a noble metal coating on a gas diffusion medium substantially free of ionomeric components comprising subjecting an electrically conductive web to a first ion beam having an energy not higher than 500 eV, then to a second beam having an energy o... | 09/02/2008 |
| 7396410 | Featuring forming methods to reduce stacking fault nucleation sites Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features include at least one sidewall that is orientated nonparallel (i.e., obliq... | 07/08/2008 |
| 7381267 | Heteroatomic single-crystal layers A method for forming, by epitaxy, a heteroatomic single-crystal semiconductor layer on a single-crystal semiconductor wafer, the crystal lattices of the layer and of the wafer being different, including forming, before the epitaxy, in the wafer surface, at least one... | 06/03/2008 |
| 7377978 | Method for producing silicon epitaxial wafer and silicon epitaxial wafer It is to provide a method for producing a silicon epitaxial wafer, which can prevent fine unevenness from occurring on a rear main surface of a silicon epitaxial wafer and which suppresses the haze level of the whole rear main surface to 50 ppm or less. A met... | 05/27/2008 |
| 7361563 | Methods of fabricating a semiconductor device using a selective epitaxial growth technique Methods of fabricating a semiconductor device using a selective epitaxial growth technique include forming a recess in a semiconductor substrate. The substrate having the recess is loaded into a reaction chamber. A semiconductor source gas and a main etching gas are... | 04/22/2008 |
| 7357837 | GaN single crystal substrate and method of making the same The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing st... | 04/15/2008 |
| 7332031 | Bulk single crystal gallium nitride and method of making same A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; ... | 02/19/2008 |
| 7332365 | Method for fabricating group-III nitride devices and devices fabricated using method A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epita... | 02/19/2008 |
| 7319247 | Light emitting-diode chip and a method for producing same An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence (3) is provided on substantially the full area of its p-side (9) with a reflective, bondable p-contact layer (6). The substrate ( | 01/15/2008 |
| 7314526 | Reaction chamber for an epitaxial reactor Reaction chamer (10) for an epitaxial reactor comprising a belljar (14) made of insulating, transparent and chemically resistant material, a susceptor (24) provided with disk-shaped cavities (34a-n) for receiving wafers (... | 01/01/2008 |
| 7312474 | Group III nitride based superlattice structures A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride... | 12/25/2007 |
| 7311947 | Laser assisted material deposition A method of forming a film on a substrate includes activating a gas precursor to form a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor. ... | 12/25/2007 |
| 7309641 | Method for rounding bottom corners of trench and shallow trench isolation process A method for rounding the bottom corners of a trench is described. In the method, an etching process is performed using a fluorocarbon compound with at least two carbon atoms, He and O2 as an etching gas to round the bottom corners of the trench. ... | 12/18/2007 |
| 7300519 | Reduction of subsurface damage in the production of bulk SiC crystals The invention is an improvement in a method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. The improvement includes etching the front face on each of a first and second SiC seed to a depth of greater than about 20 ... | 11/27/2007 |
| 7291544 | Homoepitaxial gallium nitride based photodetector and method of producing A photodetector (100, 200, 300) comprising a gallium nitride substrate, at least one active layer (104, 302) disposed on the substrate (102, 202, 306), and a conductive contact structure (106, 210, 308) affixed to the active layer (104... | 11/06/2007 |
| 7288430 | Method of fabricating heteroepitaxial microstructures An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microst... | 10/30/2007 |
| 7285905 | Organic electroluminescence device comprising a silver alloy anode and method of manufacturing the same Provided are an organic electroluminescence device capable of enhancing reflectance of an anode, thereby resulting in improved light-emitting efficiency and a method of manufacturing the same. An anode (12), a thin film layer for hole injection (13), a... | 10/23/2007 |
| 7279047 | Reactor for extended duration growth of gallium containing single crystals An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If de... | 10/09/2007 |
| 7265420 | Semiconductor substrate layer configured for inducement of compressive or expansive force An integrated circuit (IC) utilizes a strained layer. The substrate can utilize trenches in a base layer to induce stress in a layer. The trenches define pillars on a back side of a bulk substrate or base layer of a semiconductor-on-insulator (SOI) wafer. ... | 09/04/2007 |
| 7262116 | Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate... | 08/28/2007 |
| 7250360 | Single step, high temperature nucleation process for a lattice mismatched substrate A single step process for nucleation and subsequent epitaxial growth on a lattice mismatched substrate is achieved by pre-treating the substrate surface with at least one group III reactant or at least one group II reactant prior to the introduction of a group V rea... | 07/31/2007 |
| 7250640 | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenish... | 07/31/2007 |
| 7244308 | Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device A crystal substrate and a crystal film of a III-V compound of the nitride system which have no defects in the surfaces. A method of manufacturing a crystal of a III-V compound of the nitride system, and a method of manufacturing a device. A base crystal layer is for... | 07/17/2007 |
| 7241667 | Method of separating layers of material A lift off process is used to separate a layer of material from a substrate by irradiating an interface between the layer of material and the substrate. According to one exemplary process, the layer is separated into a plurality of sections corresponding to dies on ... | 07/10/2007 |
| 7238291 | Method for removing oxides from a Ge semiconductor substrate surface This invention relates to a method for removing oxides from the surface of a Ge semiconductor substrate comprising the step of subjecting the surface to a Ge oxide etching solution characterized in that the Ge oxide etching solution removes Ge oxides and Ge sub-oxid... | 07/03/2007 |
| 7236053 | High efficiency switch-mode power amplifier A switch mode power amplifier includes a transistor responsive to input signals above 1.0 GHz and which includes one terminal coupled to ground and another terminal conductively coupled to a power source. A resonant circuit coupled the second terminal to an output w... | 06/26/2007 |
| 7230263 | Gallium nitride compound semiconductor element In a gallium nitride semiconductor device comprising an active layer made of an n-type gallium nitride semiconductor that includes In and is doped with n-type impurity and a p-type cladding layer made of a p-type gallium nitride semiconductor that includes Al and is... | 06/12/2007 |
| 7226509 | Method for fabricating a carrier substrate A method for fabricating a carrier substrate. The technique includes providing a crystalline or mono-crystalline base substrate, growing a stiffening layer on a front face of the base substrate at a thickness sufficient to form a carrier substrate for subsequent pro... | 06/05/2007 |
| 7226504 | Method to form thick relaxed SiGe layer with trench structure A method of forming a SiGe layer having a relatively high germanium content and a relatively low threading dislocation density includes preparing a silicon substrate; depositing a layer of SiGe to a thickness of between about 100 nm to 500 nm, wherein the germanium ... | 06/05/2007 |
| 7214529 | Nucleic acid amplification reaction station for disposable test devices An instrument for conducting nucleic acid amplification reactions in a disposable test device. The test device includes a first reaction chamber containing a first nucleic acid amplification reagent (e.g., primers and nucleotides) and a second reaction chamber eithe... | 05/08/2007 |
| 7211144 | Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereaf... | 05/01/2007 |
