Class 117/96 - For autodoping control

Subclass of Class 117 - Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
Definition: Subject matter in which there is a disclosed intent to control
No. of patents: 71
Last issue date: 08/05/2008

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Number	Title	Issue Date
7407548	Method of manufacturing a wafer The present invention relates to a method of manufacturing a wafer comprising a single crystalline bulk substrate of a first material and at least one epitaxial layer of a second material which has a lattice different from the lattice of the first material. The pres...	08/05/2008
7407549	Diamond single crystal composite substrate and method for manufacturing the same A diamond single crystal composite substrate which are constructed from a plurality of diamond single crystal substrates with uniform plane orientations disposed side by side and integrated overall by growing diamond single crystals thereon by vapor phase synthesis,...	08/05/2008
7399356	Method for preparation of ferroelectric single crystal film structure using deposition method A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric and electronic parts and devices is prepared by forming an electrode layer having a perovskite crystal structure on a substrate made of ...	07/15/2008
7399358	Synthesis of large homoepitaxial monocrystalline diamond A method for producing a large homoepitaxial monocrystalline diamond. The method comprises placing at least two substrates in a substrate holder in a chemical vapor deposition (CVD) chamber. The substrates are positioned in such a manner that the growth faces of the...	07/15/2008
7384479	Laser diode having an active layer containing N and operable in a 0.6 μm wavelength An optical semiconductor device operable in a 0.6 μm band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less. ...	06/10/2008
7354477	Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and...	04/08/2008
7303631	Selective growth of ZnO nanostructure using a patterned ALD ZnO seed layer Patterned zinc-oxide nanostructures are grown without using a metal catalyst by forming a seed layer of polycrystalline zinc oxide on a surface of a substrate. The seed layer can be formed by an atomic layer deposition technique. The seed layer is patterned, such as...	12/04/2007
7303630	Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate Dotted seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations from neighboring regions...	12/04/2007
7294202	Process for manufacturing self-assembled nanoparticles Process for fabricating self-assembled nanoparticles on buffer layers without mask making and allowing for any degree of lattice mismatch; that is, binary, ternary or quaternary nanoparticles comprising Groups III-V, II-VI or IV-VI. The process includes a first step...	11/13/2007
7261777	Method for fabricating an epitaxial substrate A method for fabricating an epitaxial substrate. The technique includes providing a crystalline or mono-crystalline base substrate, implanting atomic species into a front face of the base substrate to a controlled mean implantation depth to form a zone of weakness w...	08/28/2007
7255745	Iridium oxide nanowires and method for forming same Iridium oxide (IrOx) nanowires and a method forming the nanowires are provided. The method comprises: providing a growth promotion film with non-continuous surfaces, having a thickness in the range of 0.5 to 5 nanometers (nm), and made from a material such as Ti, Co...	08/14/2007
7250358	Wafer for preventing the formation of silicon nodules and method for preventing the formation of silicon nodules The present invention is directed to a wafer device method for processing same. A wafer for epitaxial deposition is backside sealed with a dopant seal layer (protection layer comprised of silicon dioxide or silicon nitride. Then, a layer of polysilicon is formed coe...	07/31/2007
7235129	Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof A method for forming an array of zinc oxide nanowires on a substrate is disclosed, which includes forming a crystal phase adjusting buffer on the surface of the substrate and growing 1D zinc oxide nanowires on the buffer by zinc vapor deposition, which are normal to...	06/26/2007
7229499	Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer A manufacturing method for a semiconductor device formed in a device region composed of a plurality of semiconductor layers on a substrate, the method including a trench forming step of forming a trench on the substrate around the device region and a semiconductor g...	06/12/2007
7226509	Method for fabricating a carrier substrate A method for fabricating a carrier substrate. The technique includes providing a crystalline or mono-crystalline base substrate, growing a stiffening layer on a front face of the base substrate at a thickness sufficient to form a carrier substrate for subsequent pro...	06/05/2007
7193228	EUV light source optical elements Apparatus and methods are disclosed for forming plasma generated EUV light source optical elements, e.g., reflectors comprising MLM stacks employing various binary layer materials and capping layer(s) including single and binary capping layers for utilization in pla...	03/20/2007
7115166	Systems and methods for forming strontium- and/or barium-containing layers A method of forming (and apparatus for forming) a layer, such as a strontium titanate, barium titanate, or barium-strontium titanate layer, on a substrate by employing a vapor deposition method, particularly a multi-cycle atomic layer deposition process. ...	10/03/2006
7101435	Methods for epitaxial silicon growth Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral grow...	09/05/2006
7097708	Substituted donor atoms in silicon crystal for quantum computer This invention concerns nanoscale products, such as electronic devices fabricated to nanometer accuracy. It also concerns atomic scale products. These products may have an array of electrically active dopant atoms in a silicon surface, or an encapsulated layer of el...	08/29/2006
7083679	Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having ...	08/01/2006
7077903	Etch selectivity enhancement for tunable etch resistant anti-reflective layer Methods for generating a nanostructure and for enhancing etch selectivity, and a nanostructure are disclosed. The invention implements a tunable etch-resistant anti-reflective (TERA) material integration scheme which gives high etch selectivity for both etching patt...	07/18/2006
7025826	Methods for surface-biaxially-texturing amorphous films Methods for biaxially-texturing a surface-region of an amorphous material are disclosed, comprising depositing an amorphous material onto a substrate, and supplying active oxygen near the substrate during ion beam bombardment of the amorphous material to create an a...	04/11/2006
7022191	Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for...	04/04/2006
7018554	Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices A method is disclosed for preparing a substrate and epilayer for reducing stacking fault nucleation and reducing forward voltage (Vf) drift in silicon carbide-based bipolar devices. The method includes the steps of etching the surface of a silicon carbide...	03/28/2006
6940103	Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having ...	09/06/2005
6802902	Process for producing an epitaxial layer of gallium nitride A process for producing an epitaxial layer of gallium nitride (GaN). A film of a dielectric whose thickness is about one monolayer is formed on a surface of a substrate. A continuous gallium nitride layer is then deposited on the dielectric film at a temperature suf...	10/12/2004
6790279	Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor A buffer layer 2 made of aluminum nitride (AlN) is formed on a substrate 1 and is formed into an island pattern such as a dot pattern, a striped pattern, or a grid pattern such that substrate-exposed portions are formed in a scattered manner. A group I...	09/14/2004
6776842	Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic The present invention relates to a method of vapor phase epitaxial deposition of silicon on a silicon substrate including areas containing dopants at high concentration among which is arsenic, while avoiding an autodoping of the epitaxial layer by arsenic, including...	08/17/2004
6666916	Apparatus and method for making free standing diamond A mandrel for use in a diamond deposition process has surfaces with different diamond adhesion properties. According to one embodiment, a mandrel is provided and has first and second surfaces on which a diamond film is deposited, with the second surface f...	12/23/2003
6645295	Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor A buffer layer 2 made of aluminum nitride (AlN) is formed on a substrate 1 and is formed into an island pattern such as a dot pattern, a striped pattern, or a grid pattern such that substrate-exposed portions are formed in a scattered manner. A group III ...	11/11/2003
6589333	Method for the manufacture of a substrate, substrate manufactured in accordance with this method, carrier wafer and diamond jewel A method is described for the production of a suitable substrate for the subsequent growth of a mono-crystalline diamond layer. This method includes the following steps: Selection of a substrate of a mono-crystalline material having a fixed lattice consta...	07/08/2003
6530991	Method for the formation of semiconductor layer A method for the formation of a semiconductor layer by which a defect density of structural defects, particularly a dislocation density of threading dislocations in the resulting semiconductor layer can be remarkably reduced, so that hours of work can be ...	03/11/2003
6468348	Method of producing an open form An open form is produced with a plurality of in each case two-dimensionally structured layers. The form is made of silicon which is etchable in dependence on its doping. A first silicon layer is first produced, and a portion of the first layer which belon...	10/22/2002
6428635	Substrates for superconductors An alloy capable of forming a (100) [001] cube-texture by thermo-mechanical techniques has 5 to 45 atomic percent nickel with the balance being copper. The alloy is useful as a conductive substrate for superconducting composites where the substrate is coa...	08/06/2002
6358313	Method of manufacturing a crystalline silicon base semiconductor thin film A method of manufacturing a crystalline silicon base semiconductor thin film on a substrate, includes the steps of forming a thin film primarily made of silicon on the substrate by forming plasma of a film material gas containing at least a silicon base g...	03/19/2002
6325850	Method for producing a gallium nitride epitaxial layer The invention concerns a method for producing a gallium nitride (GaN) epitaxial layer characterised in that it consists in depositing on a substrate a dielectric layer acting as a mask and depositing on the masked gallium nitride, by epitaxial deposit, so...	12/04/2001
6315826	Semiconductor substrate and method of manufacturing the same Disclosed are a structure of a semiconductor substrate and a method of manufacturing the semiconductor substrate preventing a reduction of gettering capability due to a high-temperature heat treatment. In a semiconductor substrate containing a highly conc...	11/13/2001
6294018	Alignment techniques for epitaxial growth processes The specification describes a lithographic technique in which alignment marks are defined in a first semiconductor layer and the alignment marks are then covered with a protective SiO2 layer. After subsequent semiconductor layer growth steps, w...	09/25/2001
6294019	Method of making group III-V compound semiconductor wafer In the present method, a group III-V compound semiconductor wafer includes a substrate consisting of a group III-V compound whose outer peripheral edge portion is so chamfered that its section has an arcuate shape substantially with a radius R, and an epi...	09/25/2001
6254676	Method for manufacturing metal oxide semiconductor transistor having raised source/drain A method for manufacturing a metal oxide semiconductor transistor having a raised source/drain is described. A first spacer is formed on a sidewall of a gate electrode. An epitaxial layer is then formed on the exposed surface of the substrate and a top su...	07/03/2001

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Class 117/96 - For autodoping control