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Cloaking System Using Optoelectronically Controlled Camouflage
A Cloaking System designed to operate in the visible light spectrum, utilizes optoelectronics and/or photonic components to conceal an object within it.
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| Number | Title | Issue Date |
| 8168000 | III-nitride semiconductor device fabrication A method of fabricating a III-nitride power semiconductor device which includes selective prevention of the growth of III-nitride semiconductor bodies to selected areas on a substrate in order to reduce stresses and prevent cracking. ... | 05/01/2012 |
| RE42770 | Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having ... | 10/04/2011 |
| 7837792 | Method for manufacturing semiconductor device In a method for manufacturing a crystalline silicon film by utilizing a metal element that accelerates the crystallization of silicon, an adverse influence of this metal element can be suppressed. A semiconductor device manufacturing method is comprised of the steps... | 11/23/2010 |
| 7708832 | Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate Provided is a method for preparing a substrate for growing gallium nitride and a gallium nitride substrate. The method includes performing thermal cleaning on a surface of a silicon substrate, forming a silicon nitride (Si3N4) micro-mask on the... | 05/04/2010 |
| 7695564 | Thermal management substrate The present invention is directed to a method for fabricating a thermal management substrate having a Silicon (Si) layer on a polycrystalline diamond film, or on a diamond-like-carbon (DLC) film. The method comprises acts of fabricating a separation by implantation ... | 04/13/2010 |
| 7658798 | Method for fixing metal particles and method for manufacturing substrate containing metal particles, method for manufacturing substrate containing carbon nanotube, and method for manufacturing substrate containing semiconductor-crystalline rod, employing thereof A metal fine particle is adhere to a predetermined location on a substrate. A resist film containing a metallic compound dispersed therein is formed on a substrate (101). A patterning of the resist film is conducted by a lithography. The substrate (101... | 02/09/2010 |
| 7572333 | Method for manufacturing semiconductor device A semiconductor manufacturing apparatus includes a hot plate which heats a sapphire substrate; a support table having a support plate disposed as being spaced away from the hot plate by a predetermined interval, and having support portions which respectively support... | 08/11/2009 |
| 7540919 | Solidification of crystalline silicon from reusable crucible molds A process for making silicon ingots using a multi-part, reusable, graphite crucible of at least two mold pieces configured for assembly into an open top mold having an interior surface functional as a mold cavity for receiving molten silicon; removing or reducing a ... | 06/02/2009 |
| 7524373 | Apparatus and semiconductor co-crystal The invention provides a method to enforce face-to-face stacking of organic semiconductors in the solid state that employs semiconductor co-crystal formers (SCCFs), to align semiconductor building blocks (SBBs). Single-crystal X-ray analysis reveals n-orbital overla... | 04/28/2009 |
| 7465354 | Patterned ferroelectric thin films for microwave devices A process, for patterning a thin film that is highly resistant to conventional etching processes and that is to be deposited at a high substrate temperature, is disclosed. The process uses a liftoff method wherein a refractory material has been substituted for the c... | 12/16/2008 |
| 7442254 | Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having ... | 10/28/2008 |
| 7438762 | Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of t... | 10/21/2008 |
| 7438759 | Ambient environment nanowire sensor An ambient environment nanowire sensor and corresponding fabrication method have been provided. The method includes: forming a substrate such as Silicon (Si) or glass; growing nanowires; depositing an insulator layer overlying the nanowires; etching to expose tips o... | 10/21/2008 |
| 7431767 | Apparatus and method for growth of a thin film An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one of the reactants comprises excited species, e.g., radicals. In a spec... | 10/07/2008 |
| 7427326 | Minimizing degradation of SiC bipolar semiconductor devices A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segr... | 09/23/2008 |
| 7416606 | Method of forming a layer of silicon carbide on a silicon wafer The invention relates to a method of forming a layer of silicon carbide on a silicone wafer. The method includes the following steps: depositing an anti-carburation mask on the wafer using an essentially-check pattern; performing a carburation step under conditions ... | 08/26/2008 |
| 7407548 | Method of manufacturing a wafer The present invention relates to a method of manufacturing a wafer comprising a single crystalline bulk substrate of a first material and at least one epitaxial layer of a second material which has a lattice different from the lattice of the first material. The pres... | 08/05/2008 |
| 7407549 | Diamond single crystal composite substrate and method for manufacturing the same A diamond single crystal composite substrate which are constructed from a plurality of diamond single crystal substrates with uniform plane orientations disposed side by side and integrated overall by growing diamond single crystals thereon by vapor phase synthesis,... | 08/05/2008 |
| 7404858 | Method for epitaxial growth of silicon carbide A method for epitaxial growth of silicon carbide using chemical vapor deposition (CVD) is provided. This method utilizes halogenated carbon precursors and control of the gas-phase interaction of halogen-containing intermediate chemical products involving silicon and... | 07/29/2008 |
| 7399356 | Method for preparation of ferroelectric single crystal film structure using deposition method A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric and electronic parts and devices is prepared by forming an electrode layer having a perovskite crystal structure on a substrate made of ... | 07/15/2008 |
| 7396409 | Acicular silicon crystal and process for producing the same By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a catalyst, it is possible to reliably, homogeneously and massively fo... | 07/08/2008 |
| 7396410 | Featuring forming methods to reduce stacking fault nucleation sites Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features include at least one sidewall that is orientated nonparallel (i.e., obliq... | 07/08/2008 |
| 7393411 | β-GaOsingle crystal growing method, thin-film single crystal growing method, GaOlight-emitting device, and its manufacturing method A method for growing a β-Ga2O3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a GazO3 light-emittin... | 07/01/2008 |
| 7387678 | GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same A GaN substrate comprises a GaN single crystal substrate, an AlxGa1-xN intermediate layer (0 | 06/17/2008 |
| 7384479 | Laser diode having an active layer containing N and operable in a 0.6 μm wavelength An optical semiconductor device operable in a 0.6 μm band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less. ... | 06/10/2008 |
| 7381397 | Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals Methods and apparatus for preconditioning a lithium niobate or lithium tantalate crystal. At least a portion of a surface of the crystal is covered with a condensed material including one or more active chemicals. The crystal is heated in a non-oxidizing environment... | 06/03/2008 |
| 7368014 | Variable temperature deposition methods A deposition method may include, at a first temperature, contacting a substrate with a first precursor and chemisorbing a first layer at least one monolayer thick over the substrate. At a second temperature different from the first temperature, the first layer may b... | 05/06/2008 |
| 7364805 | Crystal film, crystal substrate, and semiconductor device A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12 | 04/29/2008 |
| 7363699 | Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers A magnetoresistive sensor having a hard bias layer with an engineered magnetic anisotropy in a direction substantially parallel with the medium facing surface. The hard bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited ov... | 04/29/2008 |
| 7360299 | Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer A magnetoresistive sensor having an in stack bias layer with an engineered magnetic anisotropy in a direction parallel with the medium facing surface. The in-stack bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an... | 04/22/2008 |
| 7360300 | Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer A magnetoresistive sensor having a hard magnetic pinning layer with an engineered magnetic anisotropy in a direction substantially perpendicular to the medium facing surface. The hard magnetic pinning layer may be constructed of CoPt, CoPtCr, or some other magnetic ... | 04/22/2008 |
| 7361222 | Device and method for producing single crystals by vapor deposition A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal of preferably several centimeters length. The diameter of the growin... | 04/22/2008 |
| 7357837 | GaN single crystal substrate and method of making the same The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing st... | 04/15/2008 |
| 7354477 | Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and... | 04/08/2008 |
| 7351656 | Semiconductor device having oxidized metal film and manufacture method of the same A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in ... | 04/01/2008 |
| 7338554 | Method of synthesising and growing nanorods from a metal carbide on a substrate, substrates thus obtained and applications thereof The invention relates to a process for synthesizing nanorods of a carbide of one metal M1 on a substrate, which comprises: a) the deposition, on the substrate, of a layer of nanocrystals of oxide of the metal M1 and n... | 03/04/2008 |
| 7335255 | Manufacturing method of semiconductor device The present invention provides a method for removing a metal element effectively from a crystalline semiconductor film obtained with the use of the metal element, without increasing the number of processes. In the present invention, an amorphous semiconductor film i... | 02/26/2008 |
| 7332030 | Method of treating a part in order to alter at least one of the properties thereof Process for the treatment of a component, at least one zone to be treated of which located in the depth of this component at a certain distance from the surface thereof, has at least one property that can be modified when this zone is subjected to a thermal energy d... | 02/19/2008 |
| 7326295 | Fabrication method for polycrystalline silicon thin film and apparatus using the same The present invention relates to a fabrication method for polycrystalline silicon thin film in which amorphous silicon is crystallized by laser using a mask having a mixed structure of laser transmission pattern group and laser non-transmission pattern group, wherei... | 02/05/2008 |
| 7326293 | Patterned atomic layer epitaxy A patterned layer is formed by removing nanoscale passivating particle from a first plurality of nanoscale structural particles or by adding nanoscale passivating particles to the first plurality of nanoscale structural particles. Each of a second plurality of nanos... | 02/05/2008 |
