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| Number | Title | Issue Date |
| 8118934 | Non-polar III-V nitride material and production method A method for growing flat, low defect density, and strain-free thick non-polar III-V nitride materials and devices on any suitable foreign substrates using a fabricated nano-pores and nano-network compliant layer with an HVPE, MOCVD, and integrated HVPE/MOCVD growth... | 02/21/2012 |
| 7942966 | Method of growing boron doped single crystal diamond in a plasma reactor Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes o... | 05/17/2011 |
| 7842134 | Diamond based substrate for electronic devices The invention relates to a method of manufacture of a substrate for fabrication of semiconductor layers or devices, comprising the steps of providing a wafer of silicon including at least one first surface suitable for use as a substrate for CVD diamond synthesis, g... | 11/30/2010 |
| 7678195 | Seeded growth process for preparing aluminum nitride single crystals A method of growing bulk single crystals of an AlN on a single crystal seed is provided, wherein an AlN source material is placed within a crucible chamber in spacial relationship to a seed fused to the cap of the crucible. The crucible is heated in a manner suffici... | 03/16/2010 |
| 7625447 | Method of growing semiconductor crystal SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This problem is solved as follows. The surface of a SiC substrate 1 ... | 12/01/2009 |
| 7625448 | Inlet system for an MOCVD reactor The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber comprising a top and a vertically opposing heated bottom for receiving the substrates. A gas-admittance body forming ... | 12/01/2009 |
| 7556687 | Gallium nitride crystal substrate and method of producing same A low-distortion gallium nitride crystal substrate including low dislocation single crystal regions (Z) having a definite c-axis and a definite a-axis, C-plane growth regions (Y) having a c-axis and a-axis parallel to the c-axis and a-axis of the low dislocation sin... | 07/07/2009 |
| 7553372 | Method of growing semiconductor crystal SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This problem is solved as follows. The surface of a SiC substrate 1 ... | 06/30/2009 |
| 7537660 | Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to fo... | 05/26/2009 |
| 7524372 | Method for manufacturing diamond single crystal substrate A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has ... | 04/28/2009 |
| 7491269 | Method for catalytic growth of nanotubes or nanofibers comprising a NiSi alloy diffusion barrier The invention relates to a process for the growth of nanotubes or nanofibers on a substrate comprising at least an upper layer made of a first material, wherein: the formation, on the surface of the upper layer, of a barrier layer made of an alloy of the first mater... | 02/17/2009 |
| 7445673 | Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof Gallium nitride substrates are grown by epitaxial lateral overgrowth using multiple steps. On a masked substrate having openings areas, selective growth produces first triangular stripes in which most of the threading dislocations are bent at 90°. In a second step,... | 11/04/2008 |
| 7442252 | Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is represented by the formula (Bi2O2)Am−1B | 10/28/2008 |
| 7438759 | Ambient environment nanowire sensor An ambient environment nanowire sensor and corresponding fabrication method have been provided. The method includes: forming a substrate such as Silicon (Si) or glass; growing nanowires; depositing an insulator layer overlying the nanowires; etching to expose tips o... | 10/21/2008 |
| 7438762 | Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of t... | 10/21/2008 |
| 7425237 | Method for depositing a material on a substrate wafer The deposition of material (3) on a growth area (4) may be highly temperature-sensitive. In order to reduce temperature inhomogeneities on the growth area (4) of a substrate wafer (1), a thermal radiation absorption layer (2) is ap... | 09/16/2008 |
| 7410539 | Template type substrate and a method of preparing the same The template type substrate is used for opto-electric or electrical devices and comprises A) a layer of bulk mono-crystal nitride containing at least one element of alkali metals (Group I, IUPAC 1989) and B) a layer of nitride grown by means of vapor phase epitaxy g... | 08/12/2008 |
| 7407548 | Method of manufacturing a wafer The present invention relates to a method of manufacturing a wafer comprising a single crystalline bulk substrate of a first material and at least one epitaxial layer of a second material which has a lattice different from the lattice of the first material. The pres... | 08/05/2008 |
| 7396409 | Acicular silicon crystal and process for producing the same By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a catalyst, it is possible to reliably, homogeneously and massively fo... | 07/08/2008 |
| 7387678 | GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same A GaN substrate comprises a GaN single crystal substrate, an AlxGa1-xN intermediate layer (0 | 06/17/2008 |
| 7384479 | Laser diode having an active layer containing N and operable in a 0.6 μm wavelength An optical semiconductor device operable in a 0.6 μm band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less. ... | 06/10/2008 |
| 7377978 | Method for producing silicon epitaxial wafer and silicon epitaxial wafer It is to provide a method for producing a silicon epitaxial wafer, which can prevent fine unevenness from occurring on a rear main surface of a silicon epitaxial wafer and which suppresses the haze level of the whole rear main surface to 50 ppm or less. A met... | 05/27/2008 |
| 7368014 | Variable temperature deposition methods A deposition method may include, at a first temperature, contacting a substrate with a first precursor and chemisorbing a first layer at least one monolayer thick over the substrate. At a second temperature different from the first temperature, the first layer may b... | 05/06/2008 |
| 7368763 | Semiconductor device and manufacturing method thereof A high quality silicon carbide (SiC) layer being substantially lower in threading dislocation density than a prior layer is formed on silicon (Si) substrate. A semiconductor device is fabricated in such a way that a semiconductor buffer layer containing Si in part a... | 05/06/2008 |
| 7368012 | Methods and apparatuses for a dynamic growing of single-crystal thin-film composed of organic materials A method, apparatus, and system are described to generate a single-crystal film formed of an organic material in a microstructure chamber having a growth zone with defined dimensions. A flow of at least one of a 1) saturated solution of organic crystalline molecules... | 05/06/2008 |
| 7361222 | Device and method for producing single crystals by vapor deposition A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal of preferably several centimeters length. The diameter of the growin... | 04/22/2008 |
| 7357837 | GaN single crystal substrate and method of making the same The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing st... | 04/15/2008 |
| 7354783 | Method for fabricating a semiconductor component based on GaN A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body a... | 04/08/2008 |
| 7354477 | Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and... | 04/08/2008 |
| 7351286 | One hundred millimeter single crystal silicon carbide wafer A method of producing a high quality bulk single crystal of silicon carbide in a seeded growth system is disclosed. The method includes positioning the seed crystal in a crucible while exerting minimal torsional forces on the seed crystal to thereby prevent torsiona... | 04/01/2008 |
| 7348259 | Method of fabricating a semiconductor structure that includes transferring one or more material layers to a substrate and smoothing an exposed surface of at least one of the material layers A method of fabricating a semiconductor structure. According to one aspect of the invention, on a first semiconductor substrate, a first compositionally graded Si1-xGex buffer is deposited where the Ge composition x is increasing from about zer... | 03/25/2008 |
| 7341628 | Method to reduce crystal defects particularly in group III-nitride layers and substrates Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium ... | 03/11/2008 |
| 7338554 | Method of synthesising and growing nanorods from a metal carbide on a substrate, substrates thus obtained and applications thereof The invention relates to a process for synthesizing nanorods of a carbide of one metal M1 on a substrate, which comprises: a) the deposition, on the substrate, of a layer of nanocrystals of oxide of the metal M1 and n... | 03/04/2008 |
| 7335255 | Manufacturing method of semiconductor device The present invention provides a method for removing a metal element effectively from a crystalline semiconductor film obtained with the use of the metal element, without increasing the number of processes. In the present invention, an amorphous semiconductor film i... | 02/26/2008 |
| 7332030 | Method of treating a part in order to alter at least one of the properties thereof Process for the treatment of a component, at least one zone to be treated of which located in the depth of this component at a certain distance from the surface thereof, has at least one property that can be modified when this zone is subjected to a thermal energy d... | 02/19/2008 |
| 7329317 | Method for producing silicon wafer The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 an... | 02/12/2008 |
| 7326293 | Patterned atomic layer epitaxy A patterned layer is formed by removing nanoscale passivating particle from a first plurality of nanoscale structural particles or by adding nanoscale passivating particles to the first plurality of nanoscale structural particles. Each of a second plurality of nanos... | 02/05/2008 |
| 7322871 | Process to make nano-structured emitters for incandescence light sources In a process to make an emitter (10) for light sources, which can be led to incandescence through the passage of electric current, a layer made of anodized porous alumina (1) is used as sacrificial element for the structuring of at least a part of the ... | 01/29/2008 |
| 7320896 | Infrared radiation detector Electronic devices are disclosed that may be used for infrared radiation detection. An example electronic device includes a substrate, a transistor included in the substrate and a silicon-germanium (Si—Ge) structural layer coupled with the transistor. The structur... | 01/22/2008 |
| 7319530 | System and method for measuring germanium concentration for manufacturing control of BiCMOS films A system and method is disclosed for measuring a germanium concentration in a semiconductor wafer for manufacturing control of BiCMOS films. Germanium is deposited over a silicon substrate layer to form a silicon germanium film. Then a rapid thermal oxidation (RTO) ... | 01/15/2008 |
