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| Number | Title | Issue Date |
| 7351906 | Method of manufacturing crystalline film, method of manufacturing crystalline-film-layered substrate, method of manufacturing thermoelectric conversion element, and thermoelectric conversion element It is often the case that a substrate suitable for epitaxial growth does not match a substrate desirable for the use in functional elements such as thermoelectric conversion elements or the like. The present invention makes it possible to separate a predetermined la... | 04/01/2008 |
| 7332031 | Bulk single crystal gallium nitride and method of making same A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; ... | 02/19/2008 |
| 7297209 | Method and device for transferring anisotropic crystal film from donor to receptor, and the donor A method of forming an anisotropic crystal film, comprising providing a donor which comprises a base and an anisotropic crystal film bounded to the base, and a receptor. At least a portion of the anisotropic crystal film is placed in contact with the receptor. A loa... | 11/20/2007 |
| 7261777 | Method for fabricating an epitaxial substrate A method for fabricating an epitaxial substrate. The technique includes providing a crystalline or mono-crystalline base substrate, implanting atomic species into a front face of the base substrate to a controlled mean implantation depth to form a zone of weakness w... | 08/28/2007 |
| 7232488 | Method of fabrication of a substrate for an epitaxial growth The present invention relates to a method of fabrication of a substrate for an epitaxial growth. A relaxed epitaxial base layer is obtained on an auxiliary substrate. The invention allows the fabrication of substrates with a more efficient epitaxial growth of a mate... | 06/19/2007 |
| 7226509 | Method for fabricating a carrier substrate A method for fabricating a carrier substrate. The technique includes providing a crystalline or mono-crystalline base substrate, growing a stiffening layer on a front face of the base substrate at a thickness sufficient to form a carrier substrate for subsequent pro... | 06/05/2007 |
| 6972051 | Bulk single crystal gallium nitride and method of making same A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; ... | 12/06/2005 |
| 6958093 | Free-standing (Al, Ga, In)N and parting method for forming same A method of forming a free-standing (Al, Ga, In)N article, by the steps including: providing an expitaxially compatible sacrificial template; depositing single crystal (Al, Ga, In)N material on the template to form a composite sacrificial template/(Al, Ga, In)N arti... | 10/25/2005 |
| 6923859 | Apparatus for manufacturing GaN substrate and manufacturing method thereof Disclosed are an apparatus for manufacturing GaN substrate and a manufacturing method thereof enabling to prevent micro-cracks or bending of a GaN substrate by separating a substrate and a GaN layer from each other after growing the GaN layer on the substrate in the... | 08/02/2005 |
| 6824610 | Process for producing gallium nitride crystal substrate, and gallium nitride crystal substrate A metal film is deposited on a starting substrate, which is any one of a single crystal sapphire substrate, a substrate comprising a single crystal gallium nitride film grown on a sapphire substrate, and a single crystal semiconductor substrate, and a gallium nitrid... | 11/30/2004 |
| 6689211 | Etch stop layer system A SiGe monocrystalline etch-stop material system on a monocrystalline silicon substrate. The etch-stop material system can vary in exact composition, but is a doped or undoped Si1-x Gex alloy with x generally between 0.2 and 0.5. Acr... | 02/10/2004 |
| 6677249 | Method for manufacturing breakaway layers for detaching deposited layer systems A method for removing layers or layer systems from a substrate and subsequent application onto an alternative substrate. A porous breakaway layer is formed by anodization in hydrofluoric acid. Optionally, a stabilizing layer with lower porosity is previou... | 01/13/2004 |
| 6673149 | Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrate A method for the production of a crack-free epitiaxial film having a thickness greater than that which can be achieved by continuous epitaxial crystal growth. This epitaxial film can be used as is in a device, used as a substrate platform for further epit... | 01/06/2004 |
| 6666916 | Apparatus and method for making free standing diamond A mandrel for use in a diamond deposition process has surfaces with different diamond adhesion properties. According to one embodiment, a mandrel is provided and has first and second surfaces on which a diamond film is deposited, with the second surface f... | 12/23/2003 |
| 6666943 | Film transfer method A device is formed by transferring a film onto a substrate when the film requires but the substrate is not adapted to a high temperature heat treatment process. The film having layers and formed on a first substrate having layers is transferred onto a sec... | 12/23/2003 |
| 6652648 | Method for fabricating GaN single crystal substrate A method for fabricating a gallium nitride single crystal substrate is provided. The method involves: forming a GaN layer on the front side of a sapphire substrate; heating the sapphire substrate at a temperature of 600-1,000° C.; and separating the GaN ... | 11/25/2003 |
| 6649494 | Manufacturing method of compound semiconductor wafer A protector film is formed on the surface of a substrate to cover at least the side surface thereof. Then, a compound semiconductor film including nitrogen is grown through epitaxial growth on the substrate at an exposed portion. Then, the substrate and t... | 11/18/2003 |
| 6641662 | Method for fabricating ultra thin single-crystal metal oxide wave retarder plates and waveguide polarization mode converter using the same A method for fabricating ultra-thin single-crystal metal oxide wave retarder plates, such as a zeroth-order X-cut single-crystal LiNbO3 half-wave plate, comprises ion implanting a bulk birefringent metal oxide crystal at normal incidence throug... | 11/04/2003 |
| 6562127 | Method of making mosaic array of thin semiconductor material of large substrates A method for making an array of thin single-crystal substrates on a handle substrate comprising the steps: attaching a plurality of single-crystal substrates to a face of a support wafer; polishing said plurality of attached single-crystal substrates so t... | 05/13/2003 |
| 6558802 | Silicon-on-silicon hybrid wafer assembly A hybrid silicon-on-silicon substrate. A thin film (2101) of single-crystal silicon is bonded to a target wafer (46). A high-quality bond is formed between the thin film and the target wafer during a high-temperature annealing process. It is believed that... | 05/06/2003 |
| 6544431 | Thin film lithium niobate structure and method of making the same A method of forming thin film waveguide regions in lithium niobate uses an ion implant process to create an etch stop at a predetermined distance below the lithium niobate surface. Subsequent to the ion implantation, a heat treatment process is used to mo... | 04/08/2003 |
| 6540827 | Slicing of single-crystal films using ion implantation A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantati... | 04/01/2003 |
| 6521041 | Etch stop layer system A SiGe monocrystalline etch-stop material system on a monocrystalline silicon substrate. The etch-stop material system can vary in exact composition, but is a doped or undoped Si1-x Gex alloy with x generally between 0.2 and 0.5. Acr... | 02/18/2003 |
| 6503321 | Slicing of single-crystal films using ion implantation A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantati... | 01/07/2003 |
| 6497763 | Electronic device with composite substrate A method for making a multilayered electronic device with at least one epitaxial layer grown on a single-crystal film bonded to a composite wherein at least one layer is polycrystalline, the method includes the step of bonding a single-crystal film at lea... | 12/24/2002 |
| 6375738 | Process of producing semiconductor article A process of producing a semiconductor article is disclosed which comprises the steps of epitaxially growing on at least one surface of a single-crystal substrate a plurality of single-crystal semiconductor layers differing from each other in at least one... | 04/23/2002 |
| 6331208 | Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor A crystal silicon substrate is anodized to form a porous layer thereon, and a thin-film crystal is grown by epitaxial growth on the porous layer. Openings extending from the surface of the grown crystal and reaching the porous layer are provided by applyi... | 12/18/2001 |
| 6328796 | Single-crystal material on non-single-crystalline substrate A method for making a multilayered structure with a single crystal film bonded to a polycrystalline substrate has the steps of: bonding a single crystal film to a polycrystalline substrate; and growing an epitaxial layer on said single crystal film bonded to said ... | 12/11/2001 |
| 6280523 | Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques.... | 08/28/2001 |
| 6238482 | Method of producing a wafer with an epitaxial quality layer and device with epitaxial quality layer A method of making a wafer is provided. A first semiconductor film is formed onto a semiconductor substrate. An epitaxial film is formed onto an epitaxial wafer. The epitaxial wafer is placed with the epitaxial film on the first semiconductor film. The ep... | 05/29/2001 |
| 6176925 | Detached and inverted epitaxial regrowth & methods An n-doped, high quality gallium nitride substrate suitable for further device or epitaxial processing, and method for making the same. The nitride substrate is produced by epitaxial deposition of first metal nitride layer on a non-native substrate follow... | 01/23/2001 |
| 6150239 | Method for the transfer of thin layers monocrystalline material onto a desirable substrate A method for transferring of monocrystalline, thin layers from a first monocrystalline substrate onto a second substrate, with a reduced requirement with respect to the hydrogen dose needed for layer splitting is realized by co-implantation of hydrogen-tr... | 11/21/2000 |
| 6146457 | Thermal mismatch compensation to produce free standing substrates by epitaxial deposition A method for producing thick, high quality GaN substrates uses an epitaxially deposited film is used as a substrate material for further device or epitaxial processing. The film is deposited using an epitaxial technique on a thin substrate called the disp... | 11/14/2000 |
| 6120597 | Crystal ion-slicing of single-crystal films A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantati... | 09/19/2000 |
| 6110279 | Method of producing single-crystal silicon carbide A (111) cubic silicon carbide single-crystal layer is formed on a (111) silicon wafer, and then the silicon wafer is removed. Thus prepared (111) cubic silicon carbide single-crystal layer is disposed in a graphite crucible to function as a seed crystal. ... | 08/29/2000 |
| 6080240 | Method for recovering sublimable material Crystal of sublimable material is recovered by introducing a reaction gas containing sublimable material into a vertical recovery chamber kept at a temperature near a depositing temperature of the sublimable material to form a crystal deposit of the subli... | 06/27/2000 |
| 5919305 | Elimination of thermal mismatch defects in epitaxially deposited films through the separation of the substrate from the film at the growth temperature A concept and process is disclosed by which an epitaxially deposited film is removed from its substrate at elevated temperatures to inhibit thermal mismatch strain induced defect generation in the epitaxial layer. The process occurs by gas phase reactions... | 07/06/1999 |
| 5877070 | Method for the transfer of thin layers of monocrystalline material to a desirable substrate A method for transferring of monocrystalline, thin layers from a first monocrystalline substrate onto a second substrate, which may have a substantially different coefficient of thermal expansion than the first substrate is realized by producing hydrogen-... | 03/02/1999 |
| 5846844 | Method for producing group III nitride compound semiconductor substrates using ZnO release layers A nitrogen-group III compound semiconductor satisfying the formula Alx Gay In1-x-y N, inclusive of x=0, y=0 and x=y=0, and a method for producing the same comprising the steps of forming a zinc oxide (ZnO) intermediate lay... | 12/08/1998 |
| 5833748 | Method of and apparatus for obtaining fissure-free crystals A process and an apparatus for obtaining unfissured crystals of GaAs after the crystal has been formed by direction solidification from a melt in a quartz crucible. The quartz crucible is immersed in molten potassium hydroxide or sodium hydroxide at a tem... | 11/10/1998 |
