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| Number | Title | Issue Date |
| 7758697 | Silicon-containing layer deposition with silicon compounds Methods for depositing a silicon-containing film are described. The methods may include delivering a silicon compound to a surface or a substrate, and reacting the silicon compound to grow the silicon-containing film. The silicon compound may be one or more compound... | 07/20/2010 |
| 7727333 | HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby Hydride phase vapor epitaxy (HVPE) growth apparatus, methods and materials and structures grown thereby. A HVPE growth apparatus includes generation, accumulation and growth zones. A first reactive gas reacts with an indium source inside the generation zone to produ... | 06/01/2010 |
| 7645340 | Vapor phase growth method for A1-containing III-V group compound semiconductor, and method and device for producing A1-containing III-V group compound semiconductor A method for growing a crystal of an Al-containing III-V group compound semiconductor by the conventional HVPE method, characterized in that it comprises a step of reacting Al with hydrogen halide at a temperature of 700° C. or lower to form a halide of Al. The met... | 01/12/2010 |
| 7628856 | Method for producing substrate for single crystal diamond growth There is disclosed a method for producing a substrate for single crystal diamond growth, comprising at least a step of preliminarily subjecting a substrate before single crystal diamond growth to a bias treatment for forming a diamond nucleus thereon by a direct-cur... | 12/08/2009 |
| 7481881 | Method of manufacturing GaN crystal substrate Affords a method of manufacturing GaN crystal substrate in which enlargement of pit size in the growing of GaN crystal is inhibited to enable GaN crystal substrate with a high substrate-acquisition rate to be produced. The method of manufacturing GaN crystal substra... | 01/27/2009 |
| 7438761 | Apparatus for fabricating a III-V nitride film and a method for fabricating the same A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III-V nitride ... | 10/21/2008 |
| 7402206 | Method of synthesizing a compound of the formula MAX, film of the compound and its use A method of synthesizing or growing a compound having the general formula Mn+1AXn(16) where M is a transition metal, n is 1, 2, 3 or higher, A is an A-group element and X is carbon, nitrogen or both, which comprises the step of exposing ... | 07/22/2008 |
| 7399357 | Atomic layer deposition using multilayers A method for the controlled growth of thin films by atomic layer deposition by making use of multilayers and using energetic radicals to facilitate the process is described in this invention. In this method, a first reactant is admitted into the reaction chamber vol... | 07/15/2008 |
| 7381267 | Heteroatomic single-crystal layers A method for forming, by epitaxy, a heteroatomic single-crystal semiconductor layer on a single-crystal semiconductor wafer, the crystal lattices of the layer and of the wafer being different, including forming, before the epitaxy, in the wafer surface, at least one... | 06/03/2008 |
| 7371281 | Silicon carbide single crystal and method and apparatus for producing the same A growth crucible (2) for depositing on a seed crystal substrate (5) a silicon carbide single crystal (6) using a sublimate gas of a silicon carbide raw material (11) is disposed inside of an outer crucible (1). During the course o... | 05/13/2008 |
| 7361220 | Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder)... | 04/22/2008 |
| 7357837 | GaN single crystal substrate and method of making the same The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing st... | 04/15/2008 |
| 7332030 | Method of treating a part in order to alter at least one of the properties thereof Process for the treatment of a component, at least one zone to be treated of which located in the depth of this component at a certain distance from the surface thereof, has at least one property that can be modified when this zone is subjected to a thermal energy d... | 02/19/2008 |
| 7318897 | Method of removing spectator ions from aqueous suspension of solid particles The present invention provides a method of removing spectator ions and contaminants from aqueous suspensions of solid particles. In accordance with the method of the invention, the solid particles are transported across a phase boundary into a non-polar organic solv... | 01/15/2008 |
| 7288153 | Method of fabricating orientation film for crystal display device A method of fabricating an orientation film for a liquid crystal display device is provided. The orientation film is formed on a substrate. An ion-beam irradiation apparatus having an ion generator and a vacuum chamber having a stage on which the substrate is dispos... | 10/30/2007 |
| 7279047 | Reactor for extended duration growth of gallium containing single crystals An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If de... | 10/09/2007 |
| 7276121 | Forming improved metal nitrides Method and apparatus are provided for forming metal nitride (MN), wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and then contacting MI with ammonia to form the MN in a process of reduced or no toxicity. Such method ... | 10/02/2007 |
| 7261776 | Deposition of buffer layers on textured metal surfaces A method of making a multilayer article includes depositing a first material on the surface of a metal substrate to form a seed layer of the first material, the first material being deposited under reducing conditions relative to the metal substrate, and then epitax... | 08/28/2007 |
| 7250083 | ALD method and apparatus A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substra... | 07/31/2007 |
| 7235129 | Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof A method for forming an array of zinc oxide nanowires on a substrate is disclosed, which includes forming a crystal phase adjusting buffer on the surface of the substrate and growing 1D zinc oxide nanowires on the buffer by zinc vapor deposition, which are normal to... | 06/26/2007 |
| 7232488 | Method of fabrication of a substrate for an epitaxial growth The present invention relates to a method of fabrication of a substrate for an epitaxial growth. A relaxed epitaxial base layer is obtained on an auxiliary substrate. The invention allows the fabrication of substrates with a more efficient epitaxial growth of a mate... | 06/19/2007 |
| 7211144 | Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereaf... | 05/01/2007 |
| 7201803 | Valve control system for atomic layer deposition chamber A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication wi... | 04/10/2007 |
| 7182811 | Semiconductor light emitting device and method for producing the same A semiconductor light emitting device comprises: a substrate; an n-type layer provided on the substrate and made of a nitride semiconductor material; a multiple quantum well structure active layer including a plurality of well layers each made of InxGa | 02/27/2007 |
| 7147713 | Phase controlled sublimation A method of forming a silicon carbon compound. A silicon source is introduced into an environment. Silicon particles are formed therefrom. One or more hydrocarbons are introduced into the environment separately from the silicon source, thereby forming one or more si... | 12/12/2006 |
| 7128785 | Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates The invention relates to a device and to a method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates. The device comprises a heated reaction chamber with a substrate support that receives at least one substrate; on... | 10/31/2006 |
| 7101795 | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor depo... | 09/05/2006 |
| 7101435 | Methods for epitaxial silicon growth Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral grow... | 09/05/2006 |
| 7094289 | Method for manufacturing highly-crystallized oxide powder A method for manufacturing a highly-crystallized oxide powder, wherein an oxide powder is produced by ejecting a starting material powder containing at least one metal element and/or semimetal element, which will become a constituent component of the oxide, into a r... | 08/22/2006 |
| 7085616 | Atomic layer deposition apparatus A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer sup... | 08/01/2006 |
| 7060131 | Epitaxy with compliant layers of group-V species The present invention relates a method for epitaxial growth of a second group III-V crystal having a second lattice constant over a first group III-V crystal having a first lattice constant, wherein strain relaxation associated with lattice-mismatched epitaxy is sup... | 06/13/2006 |
| 7042023 | Semiconductor light emitting device and method for producing the same A semiconductor light emitting device includes a semiconductor substrate; a stacked semiconductor structure formed on the semiconductor substrate; a striped ridge structure; and a semiconductor current confinement layer provided on a side surface of the striped ridg... | 05/09/2006 |
| 7033437 | Method for making semiconductor device including band-engineered superlattice A method is for making a semiconductor device by forming a superlattice that, in turn, includes a plurality of stacked groups of layers. The method may also include forming regions for causing transport of charge carriers through the superlattice in a parallel direc... | 04/25/2006 |
| 7022948 | Chamber for uniform substrate heating Embodiments of the invention generally provide an apparatus and a method for providing a uniform thermal profile to a plurality of substrates during heat processing. In one embodiment, a cassette containing one or more heated substrate supports is moveably disposed ... | 04/04/2006 |
| 6998579 | Chamber for uniform substrate heating In a first aspect, a first apparatus is provided for heating substrates. The first apparatus includes (1) a chamber having a bottom portion and a top portion; (2) a plurality of heated supports disposed within the chamber to support at least two substrates thereon; ... | 02/14/2006 |
| 6998014 | Apparatus and method for plasma assisted deposition Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a powe... | 02/14/2006 |
| 6964876 | Method and device for depositing layers The invention relates to a device comprising a process chamber which is arranged in a reaction housing and which can be heated especially by supplying heat to a substrate holder, comprising a gas inlet for the admission of gaseous starting material, whereby the deco... | 11/15/2005 |
| 6955719 | Manufacturing methods for semiconductor devices with multiple III-V material layers A method for fabricating semiconductor devices with thin (e.g., submicron) and/or thick (e.g., between 1 micron and 100 microns thick) Group III nitride layers during a single epitaxial run is provided, the layers exhibiting sharp layer-to-layer interfaces. Accordin... | 10/18/2005 |
| 6951804 | Formation of a tantalum-nitride layer A method of forming a tantalum-nitride layer (204) for integrated circuit fabrication is disclosed. Alternating or co-reacting pulses of a tantalum containing precursor and a nitrogen containing precursor are provided to a chamber (100) to form layers ... | 10/04/2005 |
| 6936357 | Bulk GaN and ALGaN single crystals Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bu... | 08/30/2005 |
