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| Number | Title | Issue Date |
| 8052791 | Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus A phase modulation element according to the present invention has a first area having a first phase value based on a phase modulation unit having a predetermined size and a second area having a second phase value based on the phase modulation unit having the predete... | 11/08/2011 |
| 7718001 | Method for fabricating semiconductor epitaxial layers using metal islands Disclosed is a method for fabricating a GaN semiconductor epitaxial layer. The method includes the steps of: (a) providing a substrate within a reaction furnace; (b) setting a temperature range of the substrate to be 200° C.˜1,300° C.; (C) supplying a Ga metallic... | 05/18/2010 |
| 7648576 | Epitaxial wafer and method for producing same After cleaning the front and back sides of a silicon wafer with a liquid SC-1 and liquid SC-2, the front and back sides of the silicon wafer are cleaned with an HF solution to be water-repellent surfaces. Following that, an epitaxial layer of silicon is formed on th... | 01/19/2010 |
| 7438759 | Ambient environment nanowire sensor An ambient environment nanowire sensor and corresponding fabrication method have been provided. The method includes: forming a substrate such as Silicon (Si) or glass; growing nanowires; depositing an insulator layer overlying the nanowires; etching to expose tips o... | 10/21/2008 |
| 7422630 | Fabrication method of semiconductor device Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorp... | 09/09/2008 |
| 7413604 | Process for producing polysilicon film The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grai... | 08/19/2008 |
| 7387677 | Substrate for epitaxy and method of preparing the same The substrate is used for opto-electric or electrical devices and comprises a layer of nitride grown by means of vapor phase epitaxy growth wherein both main surfaces of the nitride substrate are substantially consisting of non N-polar face and N-polar face respecti... | 06/17/2008 |
| 7351646 | Laser annealing method and laser annealing device In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the ... | 04/01/2008 |
| 7348226 | Method of forming lattice-matched structure on silicon and structure formed thereby A method (and resultant structure) of forming a semiconductor structure, includes processing an oxide to have a crystalline arrangement, and depositing an amorphous semiconductor layer on the oxide by one of evaporation and chemical vapor deposition (CVD). ... | 03/25/2008 |
| 7348729 | Plasma display panel and production method thereof and plasma display panel display unit A plasma display panel having excellent electron emission properties and a method of making the same. A plasma display panel is provided with a protective layer having a dense growth of columnar crystals formed on a dielectric layer. A middle layer can be provided f... | 03/25/2008 |
| 7335261 | Apparatus for forming a semiconductor thin film Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an ... | 02/26/2008 |
| 7335255 | Manufacturing method of semiconductor device The present invention provides a method for removing a metal element effectively from a crystalline semiconductor film obtained with the use of the metal element, without increasing the number of processes. In the present invention, an amorphous semiconductor film i... | 02/26/2008 |
| 7326631 | Method of manufacturing MOS transistors with gate electrodes formed in a packet of metal layers deposited upon one another Consistent with an example embodiment, a method of manufacturing a semiconductor device comprises MOS transistors having gate electrodes formed in a number of metal layers deposited upon one another. Active silicon regions having a layer of a gate dielectric and fie... | 02/05/2008 |
| 7318866 | Systems and methods for inducing crystallization of thin films using multiple optical paths The present invention is directed to systems and methods for irradiating regions of a thin film sample(s) with laser beam pulses having different energy beam characteristics that are generated and delivered via different optical paths. Exemplary methods include the ... | 01/15/2008 |
| 7311771 | Method and apparatus for forming crystalline portions of semiconductor film A crystallization apparatus according to the present invention includes a first irradiation system which irradiates a predetermined area on a glass substrate having an irradiation target, i.e., an a-Si thin film with light beams having a substantially homogeneous li... | 12/25/2007 |
| 7309476 | Diamondoid-based components in nanoscale construction Novel diamondoid-based components that may be used in nanoscale construction are disclosed. Such components include rods, brackets, screws, gears, rotors, and impellers. Subassemblies (or subsystems) may comprise one or more diamondoid components. Exemplary subassem... | 12/18/2007 |
| 7306670 | Method for producing monocrystalline structures In the case of the epitaxial growth according to the prior art, a number o strips often have to be produced in a plane in order to restore an area to be repaired. This leads to overlapping and misorientation of the crystalline structures. In the case of the method a... | 12/11/2007 |
| 7300826 | Manufacturing method of semiconductor and manufacturing method of semiconductor device The nickel element is provided selectively, i.e., adjacent to part of the surface of an amorphous silicon film in a long and narrow opening. The amorphous silicon film is irradiated with linear infrared light beams emitted from respective linear infrared lamps while... | 11/27/2007 |
| 7279373 | Laser annealing method and laser annealing device In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the ... | 10/09/2007 |
| 7274277 | Ferroelectric devices and method relating thereto The present invention relates to an electrically controllable/tunable microwave device comprising a ferroelectric substrate with a variable dielectric permitivity and conducting electrodes, arranged on said substrate, and the capacitance of which depends on applied ... | 09/25/2007 |
| 7271042 | Laser annealing method and laser annealing device In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the ... | 09/18/2007 |
| 7250081 | Methods for repair of single crystal superalloys by laser welding and products thereof Methods for repair of single crystal superalloys by laser welding and products thereof have been disclosed. The laser welding process may be hand held or automated. Laser types include: CO2, Nd:YAG, diode and fiber lasers. Parameters for operating the las... | 07/31/2007 |
| 7231239 | Super conducting cable conductor with rebco-coated conductor elements The present invention relates to a superconducting cable conductor which contains a carrying element, on which is wound at least one layer comprising two or more superconducting conductor elements, the individual conductor elements of each layer being arranged next ... | 06/12/2007 |
| 7217319 | Crystallization apparatus and crystallization method A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity di... | 05/15/2007 |
| 7208041 | Method for single crystal growth of perovskite oxides An effective, simple and low-cost a method for growing single crystals of perovskite oxideshaving primary and secondary abnormal grain growths according to temperature condition higher than a determined temperature or an atmosphere of heat treatment, involves a pero... | 04/24/2007 |
| 7179698 | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a la... | 02/20/2007 |
| 7176109 | Method for forming raised structures by controlled selective epitaxial growth of facet using spacer Raised structures comprising overlying silicon layers formed by controlled selective epitaxial growth, and methods for forming such raised-structure on a semiconductor substrate are provided. The structures are formed by selectively growing an initial epitaxial laye... | 02/13/2007 |
| 7167615 | Resonant waveguide-grating filters and sensors and methods for making and using same Waveguide grating devices. One includes at least one waveguide having an end, the end having an endface; and a waveguide grating fabricated on the endface, the waveguide grating having at least one waveguide layer and at least one grating layer. The waveguide layer ... | 01/23/2007 |
| 7150788 | Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate A method of adjusting the in-plane lattice constant of a substrate and an in-plane lattice constant adjusted substrate are provided. A crystalline substrate (1) made of SrTiO3 is formed at a first preestablished temperature thereon with a first epi... | 12/19/2006 |
| 7149560 | Superconducting cable and superconducting cable line A superconducting cable includes a first conductor layer formed of superconducting wires, and an insulating layer formed at the outer periphery of the first conductor layer. The first conductor layer is an assembly of a plurality of superconducting wires obtained by... | 12/12/2006 |
| 7145415 | Electrically tunable filters with dielectric varactors This invention provides a voltage tunable filter comprising an input connection point, an output connection point, and at least one circuit branch electrically coupled to the input connection point and the output connection point and including a voltage tunable diel... | 12/05/2006 |
| 7115487 | Crystalline thin film and process for production thereof, element employing crystalline thin film, circuit employing element, and device employing element or circuit A process for producing a crystalline thin film is provided which comprises melting and resolidifying a starting thin film having regions different in the state coexisting continuously. A small region of the starting thin film has a size distribution of number conce... | 10/03/2006 |
| 7105048 | Laser irradiation apparatus Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is cryst... | 09/12/2006 |
| 7041580 | Laser annealing method and laser annealing device A laser-annealing method includes the steps of a first step of cleaning a non-monocrystal silicon film formed on a substrate, and a second step of laser-annealing the non-monocrystal silicon film in an atmosphere containing oxygen therein, wherein the first and seco... | 05/09/2006 |
| 7025826 | Methods for surface-biaxially-texturing amorphous films Methods for biaxially-texturing a surface-region of an amorphous material are disclosed, comprising depositing an amorphous material onto a substrate, and supplying active oxygen near the substrate during ion beam bombardment of the amorphous material to create an a... | 04/11/2006 |
| 7026193 | Method of manufacturing a semiconductor device having TFTs with uniform characteristics In a circuit including at least one thin film transistor formed on an insulating substrate, a region 105 to which metal elements that promote crystallinity are added is disposed apart from a semiconductor island region 101 that forms the thin film tran... | 04/11/2006 |
| 7018468 | Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the subst... | 03/28/2006 |
| 7018874 | Method for fabricating thin-film transistor A process for fabricating thin film transistors is disclosed, which comprises a two-step laser annealing process as follows: crystallizing the channel portion by irradiating the channel portion with an irradiation beam; and modifying the el... | 03/28/2006 |
| 7012275 | Method for fabrication of high temperature superconductors A layered article of manufacture and a method of manufacturing same is disclosed. A substrate has a biaxially textured MgO crystalline layer having the c-axes thereof inclined with respect to the plane of the substrate deposited thereon. A layer of one or more of YS... | 03/14/2006 |
| 6987037 | Strained Si/SiGe structures by ion implantation One aspect of this disclosure relates to a method for forming a strained silicon over silicon germanium (Si/SiGe) structure. In various embodiments, germanium ions are implanted into a silicon substrate with a desired dose and energy to be located beneath a surface ... | 01/17/2006 |
