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| Number | Title | Issue Date |
| 4959245 | Method of modifying a surface of a body using electromagnetic radiation A method of modifying a surface of a body such as a semiconductor body is described in which a beam of electromagnetic radiation is directed towards the surface so that the electromagnetic radiation is incident on the surface at or near the Brewster angle... | 09/25/1990 |
| 4950358 | Vapor phase epitaxy of semiconductor material in a quasi-open system A method for forming an epitaxial layer upon a semiconductor substrate by vapor phase epitaxy is carried out within a quasi-open system having a controllably pressurized vertically orientated reaction chamber containing a charge of source material at a lo... | 08/21/1990 |
| 4931132 | Optical control of deposition of crystal monolayers A method and apparatus for epitaxial growth of precisely one monolayer. The growth is by organometallic chemical vapor deposition in which the substrate is alternately exposed to the anion and cation of a III-V compound. During deposition of the cation, f... | 06/05/1990 |
| 4928626 | Reactant gas injection for IC processing An epitaxial reactor system provides for enhanced gas flow control and, thus, deposition uniformity. Gross reactant gas flow is set by a main flow controller which delivers unequal amounts to a reaction chamber via two nozzle assemblies. A supplemental fl... | 05/29/1990 |
| 4914052 | Process for the formation of a functional deposited film containing groups III and V atoms by microwave plasma chemical vapor deposition process A process for the formation of a functional deposited film containing atoms belonging to the group III and V of the peridoical table as the main constituent atoms by introducing, into a film forming space for forming a deposited film on a substrate dispos... | 04/03/1990 |
| 4908330 | Process for the formation of a functional deposited film containing group IV atoms or silicon atoms and group IV atoms by microwave plasma chemical vapor deposition process A process for the formation of a functional deposited film as a thin semiconductor film constituted with the group IV element or a thin semiconductor film constituted with group IV element alloy, by introducing, into a film forming space, a compound as th... | 03/13/1990 |
| 4869776 | Method for the growth of a compound semiconductor crystal A method for the growth of a compound semiconductor crystal using the sublimation method or the halogen transportation method, comprising maintaining the temperature of a limited portion of the crystal, which has just begun to grow, at a higher level than... | 09/26/1989 |
| 4639377 | Thin film formation technique and equipment A thin film formation technique and apparatus therefor which comprises converting a molecular beam effusing from a molecular beam source equipment to a pulsed molecular beam; introducing the pulsed molecular beam into an ionization chamber in such a fashi... | 01/27/1987 |
| 4575462 | Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device A method of growing an alloy film by a layer-by-layer process on a substrate is described, together with a method of making an semiconductor device in which an alloy film is grown on a substrate by a layer-by-layer process. The atomic ratio of constituent... | 03/11/1986 |
| 4517220 | Deposition and diffusion source control means and method The uniformity and reproducibility of doped, deposited, or etched layers formed in a reaction chamber by a reactant derived in part from a solid or liquid reactant source, through which a carrier gas flows, is improved by dynamically adjusting the carrier... | 05/14/1985 |
| 4483725 | Reactive vapor deposition of multiconstituent material The low temperature method for depositing multiconstituent material on a substrate uses at least two ballistic particle streams that are caused to intersect in a volume of space proximate to the substrate. One particle stream, the "gas" stream, comprises ... | 11/20/1984 |
| 4479845 | Vapor growth with monitoring In vapor growth of a doped semiconductor layer on a substrate, a plurality of sampling points are selected in the layer to be grown and in the substrate and each treated as a diffusion source. Computation is carried out to provide the actual doping progra... | 10/30/1984 |
| 4468278 | Process for mono-crystal growth in a closed tubular chamber The invention relates to the production of mono-crystals. It concerns a process for the growth of at least one mono-crystal in a cylindrical chamber, comprising a source zone and a well zone, heated to different uniform temperatures. By appropriate regula... | 08/28/1984 |
| 4434025 | Controlling crystallinity and thickness of monocrystalline layer by use of an elliptically polarized beam of light Monocrystalline layers of semiconductor materials are formed by epitaxial growth from thermal vapor deposition. Crystallinity and thickness of the monocrystalline layers are monitored and controlled during growth by ellipsometry. Low defect density thin f... | 02/28/1984 |
| 4394210 | Process for forming a lead film There is disclosed a process for forming a lead film by a cluster ion beam deposition which includes the step of impinging ionized and non-ionized neutral clusters having 100 to 2,000 atoms of vapor of lead loosely coupled by Van der Walls force upon a su... | 07/19/1983 |
| 4388342 | Method for chemical vapor deposition A method of forming by CVD technique a layer of material with good uniformity and reproducibility on the surfaces of a plurality of substrates supported within the reaction chamber. The feature of the invention is that a gaseous mixture containing a react... | 06/14/1983 |
| 4343674 | Monitoring indium phosphide surface composition in the manufacture of III-V Indium phosphide stoichiometry in III-V semiconductor devices is sensitive to processing conditions during liquid phase epitaxy deposition. Disclosed is a method for determining indium-to-phosphorus ratio in an n-type indium phosphide semiconductor surfac... | 08/10/1982 |
| 4203799 | Method for monitoring thickness of epitaxial growth layer on substrate In growing on a substrate a film of substance of a similar kind to the substrate, ions are implanted into the substrate to form within the substrate a layer of substance having an optical property different from that of the substrate, and an epitaxial fil... | 05/20/1980 |
| 4190470 | Production of epitaxial layers by vapor deposition utilizing dynamically adjusted flow rates and gas phase concentrations Epitaxial layers of single crystals of gallium arsenide and similar compounds are formed by vapor deposition. A carrier gas flow is passed through a liquid halide of a group VB material to obtain a first vapor having a halogen, carrier gas and group VB ma... | 02/26/1980 |
| 4160166 | System for regulating molecular flux and its application to co-evaporation techniques A system for automatic regulation of the density of a given molecular type at a pre-arranged point in an apparatus called a "flux or molecular jet", intended to make epitaxy layers. In a vacuum enclosure a probe for mass spectrometry analysis (electrostat... | 07/03/1979 |
| 4137122 | Method of manufacturing a semiconductor device The invention relates to a method of manufacturing a semiconductor device in which a compound consisting of at least two semiconductor materials and having an energy gap which is smaller than that of a substrate is deposited epitaxially on the substrate. ... | 01/30/1979 |
| 4125643 | Process for depositing elemental silicon semiconductor material from a gas phase A semiconductor material, such as elemental silicon, is deposited on heated rod-shaped mandrels from a reactive gas stream capable of pyrolytically depositing silicon wherein the gas stream is regulated in such a manner that the silicon deposition rate re... | 11/14/1978 |
