Celebrity Inventors
Mark Twain (Samuel L. Clemens) received Patent No. 121,992 for "An Improvement in Adjustable and Detachable Straps for Garments." He later received two more patents: one for a self-pasting scrapbook and one for a game to help players remember important historical dates.
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| Number | Title | Issue Date |
| 8123857 | Method for producing p-type SiC semiconductor single crystal A method for producing a p-type SiC semiconductor single crystal, including: using a solution in which C is dissolved in a Si melt and 30 to 70 at. % Cr and 0.1 to 20 at. % Al, based on a total weight of the Si melt, Cr, and Al, are added to the Si melt, to grow a p... | 02/28/2012 |
| 8025728 | Method for manufacturing single crystal of nitride A seed crystal is immersed in a melt containing a flux and a single crystal material in a growth vessel to produce a nitride single crystal on the seed crystal. A difference (TS-TB) of temperatures at a gas-liquid interface of the melt (TS) and at the lowermost part... | 09/27/2011 |
| RE41551 | Method of preparing group III-V compound semiconductor crystal A method is provided for preparing, with high reproducibility, a carbon-doped group III-V compound semiconductor crystal having favorable electrical characteristics and having impurities removed therefrom, and in which the amount of doped carbon can be adjusted easi... | 08/24/2010 |
| 7410540 | Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal In a process for manufacturing doped semiconductor single crystal comprises solidifying in a crucible, the amount of dopant is added into the semiconductor melt after the beginning of the crystal growth onto the seed crystal, or after at least partial solidification... | 08/12/2008 |
| 7407547 | Liquid-phase growth apparatus and method A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a taw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors... | 08/05/2008 |
| 7393409 | Method for making large-volume CaFsingle cystals with reduced scattering and improved laser stability, the crystals made by the method and uses thereof The method provides CaF2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2 starting material is heat-treated for at... | 07/01/2008 |
| 7364620 | Method of purifying alkaline-earth and alkali-earth halides for crystal growth An improved technique that reduces the potential for trapped impurities and/or ensuring desired stoichiometry of a grown crystal. Improved contaminant removal is obtained by bubbling a scavenger gas, such as fluorine gas or hydrogen fluoride gas, through a melt of a... | 04/29/2008 |
| 7344595 | Method and apparatus for purification of crystal material and for making crystals therefrom and use of crystals obtained thereby The method for producing single crystals includes drying crystal raw material by removing water, reaction of impurities with a scavenger, preferably a metal halide, and homogenizing the melt. The method is performed with the raw material in a melt vessel with a vari... | 03/18/2008 |
| 7344598 | Rotationally-vibrated unidirectional solidification crystal growth system and its method A rotationally-vibrated unidirectional solidification crystal growth system comprises a furnace, a crucible, a rotational-vibration device including a mounting holder, a motor and a vibrating apparatus. The furnace contains a high temperature portion, a thermal isol... | 03/18/2008 |
| 7306673 | Furnace purification and metal fluoride crystal grown in a purified furnace The invention is directed to a method for growing metal fluoride crystals suitable for use in below 200 nm optical lithography systems, the method comprising including at least the step of heating a crystal growth furnace to a temperature in the range of 1400-2000°... | 12/11/2007 |
| 7301149 | Apparatus and method for determining a thickness of a deposited material Method and apparatus for determining a thickness of a deposited material. Energy is passed through the deposited material, wherein some of the energy is transmitted. The transmitted energy is received, and the received energy is used to determine a thickness of the ... | 11/27/2007 |
| 7294198 | Process for producing single-crystal gallium nitride A process for producing single-crystal gallium nitride comprising the steps of performing congruent melting of gallium nitride at a high pressure between 6×104 atm. and 10×104 atm. and at a high temperature between 2,200° C. and 2,500° C. a... | 11/13/2007 |
| 7288152 | Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same The present invention provides a manufacturing method in which high quality GaN crystals and GaN crystal substrates can be manufactured under mild conditions of low pressure and low temperature. In a method of manufacturing GaN crystals in which in a gas atmosphere ... | 10/30/2007 |
| 7279047 | Reactor for extended duration growth of gallium containing single crystals An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If de... | 10/09/2007 |
| 7261775 | Methods of growing a group III nitride crystal A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the ... | 08/28/2007 |
| 7261774 | Crystal-growing furnace, in particular a vertical Bridgman crystal-growing furnace or a vertical gradient freeze crystal-growing furnace having a jacket heater and a method of regulating the heat output of the jacket heater This invention is based on the problem of achieving the most planar possible phase boundary extending in the horizontal direction between the still molten material and the material that has already crystallized out in a vertical Bridgman crystal-growing furnace or v... | 08/28/2007 |
| RE39778 | Method of preparing group III-V compound semiconductor crystal A method is provided for preparing, with high reproducibility, a carbon-doped group III-V compound semiconductor crystal having favorable electrical characteristics and having impurities removed therefrom, and in which the amount of doped carbon can be adjusted easi... | 08/21/2007 |
| 7214903 | Melting and vaporizing apparatus and method An apparatus and method for heating materials or substances in an oven at an oven temperature below their melting and/or vaporization points to either melt and/or vaporize the substance. Substances are inserted into a substantially spherical envelope. The envelope i... | 05/08/2007 |
| 7211142 | CdTe single crystal and CdTe polycrystal, and method for preparation thereof A CdTe single crystal, wherein chlorine concentration in the crystal is between 0.1 and 5.0 ppmwt and resistivity at room temperature is not less than 1.0×109 Ω·cm is obtained by growing the crystal according to one of a vertical gradient freezing meth... | 05/01/2007 |
| 7211146 | Powder metallurgy crucible for aluminum nitride crystal growth A crucible for growing III-nitride (e.g., aluminum nitride) single crystals is provided. The crucible includes an elongated wall structure defining an interior crystal growth cavity. Embodiments include a plurality of grains and a wall thickness of at least about 1.... | 05/01/2007 |
| 7179331 | Crystal growing equipment The invention presented here relates to a crystal growing equipment. It is equipped in general with a resistance heater for heating a melt (13) as well as with field coils, which generate alternating magnetic field in a crucible, with which flows can be induc... | 02/20/2007 |
| 7175705 | Process for producing compound semiconductor single crystal A process for producing compound semiconductor single crystal, comprises the steps of: putting a compound semiconductor raw material into a crucible, setting the crucible in a vertical type of heating furnace to heat and melt the raw material by a heater, promoting ... | 02/13/2007 |
| 7175707 | P-type GaAs single crystal and its production method A p-type GaAs single crystal containing Si, Zn, B and In as dopants has an average dislocation density of 100 cm−2 or less. It may be produced by cooling a GaAs melt containing Si, Zn, B and In as dopants in a crystal-growing container having a seed cry... | 02/13/2007 |
| 7172918 | Infrared thermopile detector system for semiconductor process monitoring and control A thermopile-based detector for monitoring and/or controlling semiconductor processes, and a method of monitoring and/or controlling semiconductor processes using thermopile-based sensing of conditions in and/or affecting such processes. ... | 02/06/2007 |
| 7166163 | Optical member, method of manufacturing the same, and projection exposure system A method of manufacturing an optical member includes a crystal growing step and a carving step. The crystal growing step includes melting a mixture of fluoride powder and a scavenger at a melting temperature of a melting point for the fluoride and above, and then cr... | 01/23/2007 |
| 7161110 | Melting and vaporizing apparatus and method An apparatus and method for heating materials or substances in an oven at an oven temperature below their melting and/or vaporization points to either melt and/or vaporize the substance. Substances are inserted into a substantially spherical envelope. The envelope i... | 01/09/2007 |
| 7137865 | Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientation A method for the division of single crystals, in particular of GaAs, is provided in which a single crystal (1) to be cut into at least two parts and a cutting tool (2, 3; 8, 8a, 8b, 8c) are moved relative to one anoth... | 11/21/2006 |
| 7125452 | Process for calibrating the temperature control unit of an oven and oven for carrying out this process A process for calibrating the temperature control unit of a vertical gradient freeze crystal growth oven, instead of the fused material a test body (3) is used in the oven (1) that does not melt at the oven temperature, that has a heat conductivity com... | 10/24/2006 |
| 7097707 | GaN boule grown from liquid melt using GaN seed wafers A method of making a single crystal GaN boule, comprising contacting a GaN seed wafer with a GaN source environment under process conditions including a thermal gradient in the GaN source environment producing growth of gallium nitride on the GaN seed wafer, thereby... | 08/29/2006 |
| 7033433 | Crystal growth methods The invention is directed to method of preparing metal fluoride single crystals and particularly to crystals where the metal is calcium, barium, magnesium or strontium, or a mixture thereof. The invention uses a decreasing fast cooling profile and an increasing slow... | 04/25/2006 |
| 7014702 | Method and apparatus for preparation of binary and higher order compounds and devices fabricated using same A heat treatment chamber (30) is provided comprising a treatment region containing a charge (5) of compound material comprising a plurality of n atomic species, each atomic species being associated with at least one gas species. The chamber (30)... | 03/21/2006 |
| 7014707 | Apparatus and process for producing crystal article, and thermocouple used therein In order to prevent a region of supercooling from increasing and to effect uniform crystal growth, the generation of latent heat is detected from changes in temperature of a crucible or a heater or from changes in heat flow rate and also the position of solid-liquid... | 03/21/2006 |
| 7001462 | Method for making an oriented optical fluoride crystal blank A method of making an oriented fluoride crystal blank for transmitting below 250 nm ultraviolet light includes irradiating a fluoride crystal blank with an x-ray beam, detecting the x-ray beams diffracted from the fluoride crystal blank, generating a diffraction pat... | 02/21/2006 |
| 7001458 | Process for growing of optical fluorite single crystals The present invention relates to the technical field of preparing artificial calcium fluoride (optical fluorite) single crystals by growing from a melt by the directed crystallization and by using a seed crystal. The aim of the invention is to obtain oriented single... | 02/21/2006 |
| 6997987 | Optical lithography fluoride crystal annealing furnace A method of making below 250-nm UV light transmitting optical fluoride lithography crystals includes applying heat along a shortest path of conduction of a selected optical fluoride crystal, heating the optical fluoride crystal to an annealing temperature, holding t... | 02/14/2006 |
| 6994750 | Film evaluating method, temperature measuring method, and semiconductor device manufacturing method Reference infrared-absorption spectrum patterns are prepared in advance as a database. The infrared-absorption spectrum pattern of a film targeted for measurement is measured using FT-IR spectroscopy. Subsequently, multivariate analysis is performed using PLS regres... | 02/07/2006 |
| 6955858 | Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same Transition metal doped II–V nitride material films exhibit ferromagnetic properties at or above room temperature. A III–V nitride material film may be doped with a transition metal film in-situ during metal-organic chemical vapor deposition and/or by solid-state... | 10/18/2005 |
| 6949140 | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device A group-III nitride crystal growth method, comprising the steps of: a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal; b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixe... | 09/27/2005 |
| 6942730 | Hybrid stockbarger zone-leveling melting method for directed crystallization and growth of single crystals of lead magnesium niobate-lead titanate (PMN-PT) solid solutions and related piezocrystals This invention provides a hybrid Stockbarger zone-leveling melting method for seeded crystallization and the manufacture of homogenous large-sized crystals of lead magnesium niobate-lead titanate (PMN-PT) based solid solutions and related piezocrystals. The inventio... | 09/13/2005 |
| 6940081 | Infrared irradiation The invention relates to a method and a system for irradiating objects with infrared radiation, in particular in order to dry surface layers and/or fix them in place, wherein a radiation source (10) is moved by means of a robot (1) into one or several ... | 09/06/2005 |
