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...that to encourage use of his new invention, the shopping cart, market owner Sylvan Goldman hired fake shoppers to push the carts around his store in Oklahoma City? Seems his customers were reluctant to give up their hand-carried baskets.
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| Number | Title | Issue Date |
| 7279047 | Reactor for extended duration growth of gallium containing single crystals An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If de... | 10/09/2007 |
| 7014706 | Crystal forming apparatus and method for using same A crystal forming apparatus and method for using the apparatus, the apparatus including a plate and a film. The plate has a site adapted to hold a screening solution. The film is adjacent to the plate. The film seals the site and is adapted to contain a precipitant ... | 03/21/2006 |
| 7006539 | Nonlinear optical crystal There is provided a nonlinear optical crystal which is presented by the formula: K2Al2B2O7. This nonlinear optical crystal is a vacuum ultraviolet light generating nonlinear optical crystal which is easy to grow and of hig... | 02/28/2006 |
| 6955719 | Manufacturing methods for semiconductor devices with multiple III-V material layers A method for fabricating semiconductor devices with thin (e.g., submicron) and/or thick (e.g., between 1 micron and 100 microns thick) Group III nitride layers during a single epitaxial run is provided, the layers exhibiting sharp layer-to-layer interfaces. Accordin... | 10/18/2005 |
| 6936357 | Bulk GaN and ALGaN single crystals Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bu... | 08/30/2005 |
| 6921498 | Nonlinear optical crystals of compound Na3La9B8O27 and producing method and uses thereof The present invention relates to nonlinear optical crystals of compound Na3La9B8O27 and producing method and uses thereof. From the Na3La9B8O27 compound, large size single crysta... | 07/26/2005 |
| 6767401 | Crystal forming apparatus and method for using same A crystal forming apparatus and method for using the apparatus, the apparatus including a plate and a film. The plate has a site adapted to hold a screening solution. The film is adjacent to the plate. The film seals the site and is adapted to contain a precipitant ... | 07/27/2004 |
| 5879590 | Low conductivity, doped KTIOPO4 and devices based thereon A method for forming relatively large and inexpensive crystals of KTiOPO4, which exhibit relatively low conductivities, is disclosed. In addition, electro-optic devices based on such crystals are also disclosed.... | 03/09/1999 |
| 5788945 | Method for refining of silicon The present invention relates to a process for removing impurities from molten silicon by treatment of molten silicon contained in a vessel with a slag having the capability of removing the impurities, particularly boron from molten silicon wherein slag i... | 08/04/1998 |
| 5407858 | Method of making gap red light emitting element substrate by LPE To provide a GaP red light emitting element substrate which a large amount of oxygen is doped in the p-type GaP layer, and which very few Ga2 O3 precipitates develop on and/or in p-type GaP layer, and methods of manufacturing said su... | 04/18/1995 |
| 5366583 | Process for preparing barium titanate single crystals A mixture of titanium dioxide and an oxide or carbonate of barium includes one or more transition metal elements selected from the group of V, Cr, Mn, Fe, Co, Ni and Cu, in the amount of 2 ppm or more. This mixture is used as a starting material. The mixt... | 11/22/1994 |
| 5334365 | Single cesium titanyl arsenate-type crystals, and their preparation A flux process is disclosed for producing a single orthorhombic crystal of Cs1-x Mx TiOAsO4 (where M is Na, K, Rb, and/or Tl and x is from 0 to 0.4) wherein the dimension of the crystal along each axis is at least about 2 ... | 08/02/1994 |
| 5326423 | Doped crystalline titanyl arsenates and preparation thereof Doped crystalline compositions (e.g., single domain crystals) of MTiOAsO4 (wherein M is K, Rb and/or Cs) are disclosed which contain at least about 10 ppm total of Fe, Sc and/or In dopant. Also disclosed is a flux process which is characterized... | 07/05/1994 |
| 5322592 | Potassium-lithium-niobate crystals and the manufacture thereof The invention provides a method of manufacturing potassium-lithium-niobate crystals having a composition which corresponds to the formula (K2 O)0.3 (Li2 O)0.2+a (Nb2 O5)0.5+b where -0.01 | 06/21/1994 |
| 5084206 | Doped crystalline compositions and a method for preparation thereof A composition is disclosed which consists essentially of doped crystalline MTiOXO4 (wherein M is selected from the group consisting of K, Rb and Tl, X is selected from the group consisting of P and As) which contain at least about 100 ppm total... | 01/28/1992 |
| 5057487 | Crystal growth method for Y-Ba-Cu-O compounds Methods of growing Y-Ba-Cu-O compound crystal by suspended pellet partial melting and cooling and by skill melting, with crystal pulling after nucleation on a small platinum wedge or epitaxial growth on an inserted substrate.... | 10/15/1991 |
| 5006199 | Process for preparing single crystal of potassium titanium arsenate Disclosed is a process for preparing a single crystal of potassium titanium arsenate by flux growth method, wherein a compound of K2 ZO4, in which Z is at least one of W, S, Mo and Cr, is used as a flux and the flux is blended with p... | 04/09/1991 |
| 4997515 | Method of synthesizing single-crystal KTiOPO4 Single-crystal KTiOPO4 is synthesized by a method that includes using KH2 PO4, K2 CO3, and TiO2 as starting materials and using WO3 as a flux material. These materials are mixed toget... | 03/05/1991 |
| 4961819 | Synthesis in flux of crystals and epitaxies from from isotypic solid solutions of KTiOPO4 The synthesis in flux of KTP and its isotypes of the formula Ka Rb1-a TiOPb As1-b O4 comprises: the use of the hydroxides of potassium and rubidium as flux, heating to a temperature of 600° to 800° C. for abo... | 10/09/1990 |
| 4931133 | High temperature solution growth of barium borate (ଲ-BaB2 O4 ) A method of growing optical quality ଲ-BaB2 O4 crystals involves growing these crystals from a fluxed melt of BaB2 O4, Na2 O and NaCl, in certain proportions.... | 06/05/1990 |
| 4793894 | Process for crystal growth from solution A method of producing large flow-free single crystals of either LiNdP4 O12 or XB2 O4, where X is Ba, Sr or Ca, comprising the steps of, preparing a mixture of the final product and a flux of oxide of their precu... | 12/27/1988 |
| 4792377 | Flux growth of sodium beta" alumina A method for growing crystals of sodium beta" alumina is described. The crystals are grown by Czochralski type processes or analogous methods wherein single crystals are formed from a flux or melt. The melt is a eutectic type liquid primarily containing N... | 12/20/1988 |
| 4761202 | Process for crystal growth of KTiOPO4 from solution Large flow-free crystals of KiTiOPO4 and the Rb, Tl, and As analogs are produced by preparing a melt of KtiOPO4 or its analog in a flux in which the ratio by weight of KTiOPO4 to the flux at the seeding temperature is equa... | 08/02/1988 |
| 4746396 | Process for the flux synthesis of crystals of the KTiOPO4 potassium titanyl monophosphate type The process of synthesis of crystals of the KTP type comprises dissolving a mixture of titanium oxide and of oxides, oxide precursors or salts of the constituents of the desired compounds or of compounds of the KTP type prepared beforehand in at least one... | 05/24/1988 |
| 4708763 | Method of manufacturing bismuth germanate crystals The invention relates to a method of manufacturing bismuth germanate (Bi4 Ge3 O12) crystals using the Bridgman technique. A high degree of crystal perfection and an acceptable level of inclusions are obtained by changing t... | 11/24/1987 |
| 4699687 | Method of synthesizing cubic system boron nitride Cubic system boron nitride crystals are synthesized by using a synthesizing vessel separated into a plurality of synthesizing chambers by one or more partition layers. After preparing the synthesizing vessel it is heated under extra-high pressure to achie... | 10/13/1987 |
| 4625390 | Two-step method of manufacturing compressed bismuth-containing garnet films of replicable low anisotropy field value The invention relates to a two step method of manufacturing a magnetically switchable magneto-optic element comprising compressed bismuth-containing garnet film of low anisotropy field value deposited on a monocrystalline gadolinium garnet substrate. The ... | 12/02/1986 |
| 4582562 | Process for preparing a single oxide crystal A process for preparing a single oxide crystal comprising the steps of mixing to fuse raw materials for crystal growth and a flux, cooling the fused mixture slowly to grow and precipitate a single crystal, and dipping up said single crystal from the molte... | 04/15/1986 |
| 4572618 | Method for the preparation of photochromic insulating crystals A method for preparing reversible-photochromic magnesium oxide (MgO) crystals. Single crystals of MgO doped with both lithium (Li) and nickel (Ni) are grown by a conventional arc fusion method. The as-grown crystals are characterized by an amber coloratio... | 02/25/1986 |
| 4525171 | Gradient process of growing crystals from liquid media In a gradient process of growing crystals from liquid media, the need for mechanical seed holders is eliminated in that a solvent is used which at the instantaneous temperature and under the instantaneous pressure employed in the growing process has a den... | 06/25/1985 |
| 4390513 | Process for manufacturing fibrous potassium titanate Fibrous potassium titanate comprises heating to a temperature of 950° C. to 1300° C. potassium titanate of the general formula K2 O.nTiO2 in which n is from 3 to 5, or a mixture of materials from which potassium titanate is formed,... | 06/28/1983 |
| 4293372 | Growth of single-crystal magnetoplumbite Single crystal magnetoplumbite is grown at temperatures under 1000° C. from a fluxed melt having a selected concentration ratio of boron oxide to lead oxide and a selected concentration of iron oxide sufficient to cause magnetoplumbite to crystallize yet... | 10/06/1981 |
| 4292119 | Growth of single-crystal 2PbO.Fe2 O3 Single crystal 2PbO.Fe2 O3 is grown from a fluxed melt having a selected concentration ratio of boron oxide to lead oxide and a selected concentration of iron oxide sufficient to cause 2PbO.Fe2 O3 to crystallize... | 09/29/1981 |
| 4231838 | Method for flux growth of KTiOPO4 and its analogues A process for the manufacture of single crystals of MTiOXO4, wherein M is K, Rb or Tl and X is P or As, of optical quality and of sufficient size for use in nonlinear optical devices. In the process, starting ingredients chosen to be within the... | 11/04/1980 |
| 4217167 | Method of growing large low defect, monocrystals of BeO Careful control of flux composition, growth habit and growth conditions leads to rapid growth of substantially defect-free large monocrystals of BeO.... | 08/12/1980 |
| 4093502 | Process for synthesizing and growing single crystalline beryl A process for synthesizing single crystalline beryl out of a molten salt is disclosed. The process comprises the steps of providing at least one flux to which is added the component oxides of beryl and optionally a colorant. The mixture thus obtained is h... | 06/06/1978 |
| 4013501 | Growth of neodymium doped yttrium aluminum garnet crystals A method is disclosed for growing neodymium doped yttrium aluminum garnet crystals from a melt containing constituent oxides, lead oxide, lead fluoride, and boron trioxide. By subjecting the melt to a controlled temperature cycle while maintaining a tempe... | 03/22/1977 |
| 3962027 | Bi4 Ti3 O12 Single crystal growth from saturated seeded solution Method of growing single crystal of Bi4 Ti3 O12 by a top-seeded growth technique. A solution of TiO2 is a solvent consisting of Bi2 O3 with/without B2 O3 is prepared. ... | 06/08/1976 |
