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| Number | Title | Issue Date |
| 7422633 | Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate The present invention provides a process for forming a bulk monocrystalline gallium-containing nitride, i.e. GaN etc., on the surface of heterogeneous substrate, i.e. SiC etc., comprising the steps of forming a supercritical ammonia solvent containing ion or ions of... | 09/09/2008 |
| 7418835 | Low loss chalcogenide glass and process for making same using arsenic monochalcogenide This invention pertains to a chalcogenide glass of low optical loss that can be on the order of 30 dB/km or lower, and to a process for preparing the chalcogenide glass. The process includes the steps of optionally preparing arsenic monochalcogenide precursor or the... | 09/02/2008 |
| 7387677 | Substrate for epitaxy and method of preparing the same The substrate is used for opto-electric or electrical devices and comprises a layer of nitride grown by means of vapor phase epitaxy growth wherein both main surfaces of the nitride substrate are substantially consisting of non N-polar face and N-polar face respecti... | 06/17/2008 |
| 7381268 | Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follo... | 06/03/2008 |
| 7306673 | Furnace purification and metal fluoride crystal grown in a purified furnace The invention is directed to a method for growing metal fluoride crystals suitable for use in below 200 nm optical lithography systems, the method comprising including at least the step of heating a crystal growth furnace to a temperature in the range of 1400-2000°... | 12/11/2007 |
| 7294198 | Process for producing single-crystal gallium nitride A process for producing single-crystal gallium nitride comprising the steps of performing congruent melting of gallium nitride at a high pressure between 6×104 atm. and 10×104 atm. and at a high temperature between 2,200° C. and 2,500° C. a... | 11/13/2007 |
| 7267721 | Method for preparing group IV nanocrystals with chemically accessible surfaces Group IV nanocrystals, such as, for example, silicon nanocrysals and germanium nanocrystals, with chemically accessible surfaces are produced in solution reactions. Group IV halides can be reduced in organic solvents such as 1,2-dimethoxyethane (glyme), with soluabl... | 09/11/2007 |
| 7252712 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercri... | 08/07/2007 |
| 7220311 | Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride A crystal growth method of a group III nitride includes the steps of forming a melt mixture of an alkali metal and a group III element in a reaction vessel, and growing a crystal of a group III nitride formed of the group III element and nitrogen from the melt mixtu... | 05/22/2007 |
| 7160388 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercri... | 01/09/2007 |
| 7161110 | Melting and vaporizing apparatus and method An apparatus and method for heating materials or substances in an oven at an oven temperature below their melting and/or vaporization points to either melt and/or vaporize the substance. Substances are inserted into a substantially spherical envelope. The envelope i... | 01/09/2007 |
| 7125801 | Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same The present invention provides a Group III nitride crystal substrate whose surface has concavities and convexities reduced in size. The surfaces with concavities and convexities, such as hillocks, pits and facets, of Group III nitride crystals are brought into conta... | 10/24/2006 |
| 7118625 | Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is suppl... | 10/10/2006 |
| 7087112 | Nitride ceramics to mount aluminum nitride seed for sublimation growth An apparatus and method for fabricating a mount for an aluminum nitride (AlN) seed for single crystal aluminum nitride growth is provided. A holder having a proximal base and wall portions extending therefrom is fabricated from crystal growth crucible material, and ... | 08/08/2006 |
| 7021229 | Sectional barge and methods of use A sectional, self-propelled barge for use in lake, island and waterfront communities for the transportation of equipment and supplies to construction sites, for example, to a site where a septic system is to be installed and methods of use thereof. The barge is oper... | 04/04/2006 |
| 7014711 | Liquid-phase growth apparatus and method A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors... | 03/21/2006 |
| 6592663 | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued whil... | 07/15/2003 |
| 6495189 | Process for producing fat composition Disclosed is a method of producing a fat and oil composition comprising the steps of melting a fat and oil, or emulsion comprising fat and oil, and crystallizing the above-mentioned fat and oil by cooling to produce a fat and oil composition in paste form... | 12/17/2002 |
| 6488770 | Monocrystalline powder and monograin membrane production For production of monocrystalline powders there is formed a melt to which a fluxing agent is added. The melt contains the components of a semiconductor material, an example being the components of copper indium diselenide which are generally used in a sto... | 12/03/2002 |
| 6488769 | Fluoride refining method and fluoride crystal manufacturing method, and optical part and aligner using same In order to provide a fluoride refining method and a fluoride crystal manufacturing method that have great general-purpose properties and can reduce the manufacturing cost and to provide at a low cost a fluoride crystal, an optical part and an aligner the... | 12/03/2002 |
| 6485563 | Method of preparing a compound semiconductor crystal A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material... | 11/26/2002 |
| 6391108 | Liquid phase growth method of silicon crystal, method of producing solar cell, and liquid phase growth apparatus Provided are a liquid phase growth method of silicon crystal comprising a step of injecting a source gas containing at least silicon atoms into a solvent to decompose the source gas and, simultaneously therewith, dissolving the silicon atoms into the solv... | 05/21/2002 |
| 6273947 | Method of preparing a compound semiconductor crystal A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material... | 08/14/2001 |
| 6273948 | Method of fabrication of highly resistive GaN bulk crystals The method of fabrication of highly resistive GaN bulk crystals by crystallization from the solution of atomic nitrogen in the molten mixture of metals, containing gallium in the concentration not lower than 90 at. % and the Periodic Table group II metals... | 08/14/2001 |
| 6270569 | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method A Group III metal element is heated so as to melt, a gas NH3 containing nitrogen atoms is injected into a melt 3 of the Group III metal element at a temperature lower than the melting point of a nitride to be obtained, thereby producing a nitri... | 08/07/2001 |
| 6238479 | Raw material for manufacturing fluoride crystal, refining method of the same, fluoride crystal, manufacturing method of the same, and optical part The present invention provides a raw material for manufacturing an inexpensive fluoride crystal with excellent optical characteristics, and a method of manufacturing a fluoride crystal using a carbon fluoride-based gas that can easily be handled and is ca... | 05/29/2001 |
| 6123764 | Manufacturing method for calcium fluoride crystal and processing method for calcium fluoride powder A manufacturing method for a single crystal of calcium fluoride includes the steps of degassing calcium fluoride powder particles to desorb impurities from surfaces of the calcium fluoride powder particles, preprocessing the degassed calcium fluoride powd... | 09/26/2000 |
| 5900060 | Pressurized skull crucible apparatus for crystal growth and related system and methods The invention is directed to an apparatus, system and methods for growing high-purity crystals of substances that are peritectic at atmospheric pressure. The apparatus includes a pressure vessel that contains a pressurized gas. The apparatus also includes... | 05/04/1999 |
| 5863326 | Pressurized skull crucible for crystal growth using the Czochralski technique The invention is directed to an apparatus, system and methods for growing high-purity crystals of substances that are peritectic at atmospheric pressure using the Czochralski technique. The apparatus includes a pressure vessel that contains a pressurized ... | 01/26/1999 |
| 5656079 | Statement of government interest The present invention is an apparatus for the synthesis and growth of single crystals of phosphorus compounds starting with the elemental materials in a single furnace without external exposure. The apparatus of the present invention is a crystal growth f... | 08/12/1997 |
| 5544615 | Synthesis and growth processes for zinc germanium diphosphide single crystals New single crystals of ZnGeP2 are grown by a chemical vapor transport process from bulk synthesized polycrystalline ZnGeP2 using the LEK process with a controlled injection of phosphorus. The synthesis of the bulk is based on direct ... | 08/13/1996 |
| 5493984 | Terbium aluminate and method for its production A method for producing a single crystal or polycrystal of terbium aluminate containing at least terbium, aluminum and oxygen and represented by the formula Tb1-x Al1+x O3 wherein -0.5ࣘxࣘ0.5, which comprises growing the... | 02/27/1996 |
| 5493985 | Process and apparatus for controlled synthesis and in-situ single crystal growth of phosphorus compounds and the crystals therefrom The present invention is a process and apparatus for the synthesis and growth of single crystals of phosphorus compounds starting with the elemental materials in a single furnace without external exposure. The apparatus of the present invention is a cryst... | 02/27/1996 |
| 5173283 | Platelets for producing silicon carbide platelets and the platelets so-produced A process for producing silicon carbide platelets having a size of 20 μm or less, and the platelets so produced. The process comprises reacting particles of a non-graphitizable form of hard carbon containing 0.5-1.5% by weight of aluminum and at least 0.... | 12/22/1992 |
| 5134091 | Quantum effective device and process for its production A quantum effective device and its method of manufacture are disclosed, wherein said device comprises quantum well boxes composes of a semiconductor substrate and a compound semiconductor on the surface of the semiconductor substrate at least comprising a... | 07/28/1992 |
| 5132247 | Quantum effective device and process for its production A quantum effective device and its method of manufacture are disclosed, wherein said device comprises quantum well boxes composes of a semiconductor substrate and a compound semiconductor on the surface of the semiconductor substrate at least comprising a... | 07/21/1992 |
| 4917757 | Method of performing solution growth of ZnSe crystals In a method of performing a solution growth of a ZnSe crystal using Se as a solvent and relying on the temperature difference technique, the growth is performed under the conditions that the vapor pressure of Zn which is lower than the vapor pressure of S... | 04/17/1990 |
| 4904336 | Method of manufacturing a single crystal of compound semiconductor and apparatus for the same An apparatus for manufacturing a single crystal of compound semiconductor consisting of Ga and As comprises a crucible storing Ga and having a seed crystal arranged at a lower end portion thereof a gas material susceptor, arranged below the crucible, for ... | 02/27/1990 |
| 4528062 | Method of manufacturing a single crystal of a III-V compound A method of manufacturing a single crystal of a III-V compound by melting a charge of polycrystalline material and progressive crystallization of the molten stoichiometric compound in a closed space. The method is characterized in that on the one hand a certai... | 07/09/1985 |
| 4379733 | Bicameral mode crystal growth apparatus and process An apparatus and process for growing large single halide crystals that are ultra pure is described. A bicameral apparatus and process is employed in which the crystals are grown in a reactive chamber positioned within an inert chamber. A radial seal is pr... | 04/12/1983 |
