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Cloaking System Using Optoelectronically Controlled Camouflage
A Cloaking System designed to operate in the visible light spectrum, utilizes optoelectronics and/or photonic components to conceal an object within it.
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| Number | Title | Issue Date |
| 8123856 | Method and apparatus for producing group III nitride based compound semiconductor In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture. The apparatus of the invention is provided for producing a group III nitride based compound semiconductor. The apparatus includes a reactor which maintains ... | 02/28/2012 |
| 8101019 | Method for producing a monocrystalline or polycrystalline semiconductor material In the method of making a monocrystalline or polycrystalline semiconductor material semiconductor raw material is introduced into a melting crucible and directionally solidified using a vertical gradient freeze method. The molten material trickles downward, so that ... | 01/24/2012 |
| 7972439 | Method of growing single crystals from melt In a method of growing single crystals from melt, the starting material is fused and a single crystal is pulled by crystallization of the melt on a seed crystal with controlled removal of the crystallization heat. Independent heating sources constituting thermal zon... | 07/05/2011 |
| 7959729 | Method for producing group-III-element nitride single crystals and apparatus used therein A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing G... | 06/14/2011 |
| RE42279 | Method of preparing a compound semiconductor crystal A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material in a gas-i... | 04/12/2011 |
| 7833347 | Process and apparatus for producing nitride single crystal A nitride single crystal is produced using a growth solution containing an easily oxidizable material. A crucible for storing the growth solution, a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen, and an oxygen absor... | 11/16/2010 |
| 7670430 | Method of recovering sodium metal from flux It is provided a method for gently and safely recovering only sodium metal from a flux containing sodium metal in a short time and in a reusable form. Flux 23 is heated in a medium 19 unreactive with sodium metal 22 at a temperature equal to or ... | 03/02/2010 |
| 7531038 | Crystal growth method A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared... | 05/12/2009 |
| 7507292 | Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one ... | 03/24/2009 |
| RE40662 | Method of preparing a compound semiconductor crystal A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material in a gas-i... | 03/17/2009 |
| 7422633 | Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate The present invention provides a process for forming a bulk monocrystalline gallium-containing nitride, i.e. GaN etc., on the surface of heterogeneous substrate, i.e. SiC etc., comprising the steps of forming a supercritical ammonia solvent containing ion or ions of... | 09/09/2008 |
| 7418835 | Low loss chalcogenide glass and process for making same using arsenic monochalcogenide This invention pertains to a chalcogenide glass of low optical loss that can be on the order of 30 dB/km or lower, and to a process for preparing the chalcogenide glass. The process includes the steps of optionally preparing arsenic monochalcogenide precursor or the... | 09/02/2008 |
| 7393409 | Method for making large-volume CaFsingle cystals with reduced scattering and improved laser stability, the crystals made by the method and uses thereof The method provides CaF2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2 starting material is heat-treated for at... | 07/01/2008 |
| 7387677 | Substrate for epitaxy and method of preparing the same The substrate is used for opto-electric or electrical devices and comprises a layer of nitride grown by means of vapor phase epitaxy growth wherein both main surfaces of the nitride substrate are substantially consisting of non N-polar face and N-polar face respecti... | 06/17/2008 |
| 7384476 | Method for crystallizing silicon A method for crystallizing silicon is provided. The method includes: forming an amorphous silicon layer on a substrate; aligning a mask above the substrate, the mask being divided into a plurality of blocks, each block having at least two transmission patterns, the ... | 06/10/2008 |
| 7374615 | Method and equipment for manufacturing aluminum nitride bulk single crystal The present invention provides a process for forming a bulk monocrystalline aluminum nitride by using a supercritical ammonia. The process comprises the steps of forming a supercritical solvent containing ions of an alkali metal in an autoclave; and dissolving a fee... | 05/20/2008 |
| 7351575 | Methods for processing biological materials using peelable and resealable devices Devices and methods for performing assays on materials, particularly biological materials, are provided. The devices and methods make use of self-sealing members, which can be applied to a flat surface to form wells to facilitate immobilization of materials on the f... | 04/01/2008 |
| 7335908 | Nanostructures and methods for manufacturing the same A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.... | 02/26/2008 |
| 7323053 | Pulling-down apparatus and container therefor It is an object of the present invention to provide a pulling-down apparatus that can breed a crystal having good characteristics of scintillation. The apparatus retains in a container that can control an atmosphere a melting pot having a narrow hole at the bottom s... | 01/29/2008 |
| 7294198 | Process for producing single-crystal gallium nitride A process for producing single-crystal gallium nitride comprising the steps of performing congruent melting of gallium nitride at a high pressure between 6×104 atm. and 10×104 atm. and at a high temperature between 2,200° C. and 2,500° C. a... | 11/13/2007 |
| 7288294 | Method of crystallizing amorphous silicon using nanoparticles A method of crystallizing amorphous silicon, wherein the method includes supplying nanoparticles over a surface of an amorphous silicon layer; intermittently melting nanoparticles that reach the surface of the amorphous silicon layer while supplying the nanoparticle... | 10/30/2007 |
| 7264675 | Diamond manufacturing method In a diamond manufacturing method, a melt of carbon and blue kimberlite is contained in a vessel at 1000° C. The vessel is pressurized by a gas of predominantly hydrogen to 200 atmospheres. A crystallization seed is drawn from the melt to generate a piece of diamon... | 09/04/2007 |
| 7235133 | Method for growing single crystal of semiconductor By utilizing a crystal pulling apparatus for producing a single crystal according to the Czochralski method comprising at least a crucible to be charged with a raw material, a heater surrounding the crucible, and subsidiary heating means provided below the crucible,... | 06/26/2007 |
| 7223367 | Chemical sensor arrangement The present invention relates to a chemical sensor arrangement having an analyte sensitive indicator wherein the analyte sensitive indicator has at least one nanoparticle. The invention further relates to a method for providing nanoparticles of defined and different... | 05/29/2007 |
| 7220311 | Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride A crystal growth method of a group III nitride includes the steps of forming a melt mixture of an alkali metal and a group III element in a reaction vessel, and growing a crystal of a group III nitride formed of the group III element and nitrogen from the melt mixtu... | 05/22/2007 |
| 7160388 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercri... | 01/09/2007 |
| 7125801 | Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same The present invention provides a Group III nitride crystal substrate whose surface has concavities and convexities reduced in size. The surfaces with concavities and convexities, such as hillocks, pits and facets, of Group III nitride crystals are brought into conta... | 10/24/2006 |
| 7094441 | Low temperature interconnection of nanoparticles A polymeric linking agent enables the manufacture of photovoltaic cells on flexible substrates, including, for example, polymeric substrates. Photovoltaic cells may be fabricated by a relatively simple continuous manufacturing process, for example, a roll-to-roll pr... | 08/22/2006 |
| 7087112 | Nitride ceramics to mount aluminum nitride seed for sublimation growth An apparatus and method for fabricating a mount for an aluminum nitride (AlN) seed for single crystal aluminum nitride growth is provided. A holder having a proximal base and wall portions extending therefrom is fabricated from crystal growth crucible material, and ... | 08/08/2006 |
| 7063741 | High pressure high temperature growth of crystalline group III metal nitrides A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III metal selected from the group consisting of aluminum, indium, and galliu... | 06/20/2006 |
| 7001543 | Apparatus and method for manufacturing semiconductor grains A crucible is formed of a cylindrical body member and a disk-shaped nozzle member fitted to the bottom portion of the body member, and the nozzle member is provided with a nozzle hole for discharging out a semiconductor molten solution dropwise therethrough. The sem... | 02/21/2006 |
| 6984265 | Three dimensional array films The present invention provides nanoparticle film and methods of making such films. The nanoparticle film comprises a three dimensional cross-linked array of nanoparticles and linker molecules. The nanoparticle film is coherent, robust and self supporting. The film m... | 01/10/2006 |
| 6872251 | Method for manufacturing single crystal ceramic powder, and single crystal ceramic powder, composite material, and electronic element A method for manufacturing single crystal ceramic powder is provided. The method includes a powder supply step for supplying powder consisting essentially of ceramic ingredients to a heat treatment area with a carrier gas, a heat treatment step for heating the powde... | 03/29/2005 |
| 6858077 | Single crystalline silicon wafer, ingot, and producing method thereof The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in a... | 02/22/2005 |
| 6806039 | Photolithographic element blank calcium strontium fluoride UV transmitting mixed fluoride crystal with minimized spatial dispersion The invention provides a UV below 200 nm lithography method utilizing mixed calcium strontium fluoride crystals. The invention includes providing a below 200 nm radiation source for producing | 10/19/2004 |
| 6805746 | Method for supplying CZ material Granules/lumps poly-silicon raw material, low in raw material cost and free of the hazard of crack is additionally charged into a crucible in a safe and steady manner. In a single crystal growth according to the CZ method, poly-silicon raw material ins initially cha... | 10/19/2004 |
| 6605535 | Method of filling trenches using vapor-liquid-solid mechanism A method of filling trenches such as a DT cell with silicon is described that involves a vapor-liquid-solid (VLS) mechanism. First, a thin film of Si is grown on the trench sidewalls. Seed metal such as Au, Ni or Ni alloy is deposited on the sidewalls by ... | 08/12/2003 |
| 6592663 | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued whil... | 07/15/2003 |
| 6562125 | Heater arrangement for crystal growth furnace A furnace for growing a high volume of crystals includes a plurality of individual growth stations and first and second heater matrixes. Each individual growth station has a crucible and an insulating container generally surrounding the crucible and therm... | 05/13/2003 |
| 6544332 | Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer A method for producing a silicon single crystal in accordance with CZ method, characterized in that before producing the crystal having a predetermined kind and concentration of impurity, another silicon single crystal having the same kind and concentrati... | 04/08/2003 |
