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Class 117/71 - At pressure above 1 atmosphere (e.g., hydrothermal processes)


Subclass of Class 117 - Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
Definition: Subject matter in which growth occurs under conditions of
No. of patents: 67
Last issue date: 09/20/2011


1    
NumberTitleIssue Date
8021481Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
A method for large-scale manufacturing of gallium nitride includes a process for reducing and/or minimizing contamination in the crystals, for solvent addition to an autoclave, for improving or optimizing the solvent atmosphere composition, for removal of the solven...
09/20/2011
7410539Template type substrate and a method of preparing the same
The template type substrate is used for opto-electric or electrical devices and comprises A) a layer of bulk mono-crystal nitride containing at least one element of alkali metals (Group I, IUPAC 1989) and B) a layer of nitride grown by means of vapor phase epitaxy g...
08/12/2008
7374616Acentric lithium borate crystals, method for making, and applications thereof
Acentric, tetragonal lithium borate crystals are disclosed along with a hydrothermal method for forming such crystals. The crystals possess unique optical, non-linear optical, and other photonic properties and may be formed of sufficient size to be useful in a wide ...
05/20/2008
7365369Nitride semiconductor device
A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type co...
04/29/2008
7341872Multiautoclave with set of vessels for combinatorial synthesis of zeolites and other materials
A vessel arrangement having a base and multiple vessels suited for simultaneously conducting a plurality of isolated experimental reactions or treatments at atmospheric process conditions or elevated temperatures and pressure condition has been developed. A componen...
03/11/2008
7316746Crystals for a semiconductor radiation detector and method for making the crystals
A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone...
01/08/2008
7306673Furnace purification and metal fluoride crystal grown in a purified furnace
The invention is directed to a method for growing metal fluoride crystals suitable for use in below 200 nm optical lithography systems, the method comprising including at least the step of heating a crystal growth furnace to a temperature in the range of 1400-2000°...
12/11/2007
7176421Straight ribbon heater
A heater for heating a rigid fluid line or hose for freeze protection. The heater has a base made of an outer base layer, a middle base layer attached to the outer base layer; and an inner base layer attached to the middle base layer. The inner base layer can be unc...
02/13/2007
7147894Method for assembling nano objects
A method for the self assembly of a macroscopic structure with a pre-formed nano object is provided. The method includes processing a nano object to a desired aspect ratio and chemical functionality and mixing the processed nano object with a solvent to form a suspe...
12/12/2006
7135072Methods of fabricating silicon carbide crystals
Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed...
11/14/2006
7125453High temperature high pressure capsule for processing materials in supercritical fluids
A capsule for containing at least one reactant and a supercritical fluid in a substantially air-free environment under high pressure, high temperature processing conditions. The capsule includes a closed end, at least one wall adjoining the closed end and extending ...
10/24/2006
7115165Single crystal of nitride containing metal element of group III or IV and method for preparing the same
β-ZrNCl polycrystalline powder prepared by chemical transport method and NH4Cl are mixed in a molar ratio of 1:2. The mixture is encapsulated in a Au capsule (6 mm in inner diameter and 6 mm in depth) of a reaction vessel 2, which is then enclosed...
10/03/2006
7083996Nitride semiconductor device and manufacturing method thereof
A nitride semiconductor device includes a GaN substrate having a single-crystal GaN layer at least on its surface and plurality of device-forming layers made of nitride semiconductor. The device-forming layer contacting the GaN substrate has a coefficient of thermal...
08/01/2006
7018702Component
A component including a base body of a relatively hard material and a coating of a relatively soft material, wherein the coating covers at least a main surface area of the base body. The main surface area is delimited by an outer periphery and an edge portion of the...
03/28/2006
7015053Nitride semiconductor laser device
A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor lase...
03/21/2006
6924588Piezoelectric crystal material and piezoelectric resonator
In a gallium phosphate crystal, a crystallographic Y-axis and a Z-axis that have been rotated about an X-axis counterclockwise through an angle α is referred to as a Y′-axis and a Z′-axis, respectively, where the angle α is in a range from 10° to 20°. A piez...
08/02/2005
6908509CZ raw material supply method
Additional charge of a solid raw material 13 in the shapes of granules/lumps, low in raw material cost, and with no risk of cracking, is performed into a molten raw material 14 in a crucible in a static manner without solidifying a surface of the molte...
06/21/2005
6841000Mineralizer composition and method for growing zinc oxide crystals, films and powders
Aqueous mineralizer solutions having retrograde solubility for ZnO contain a mineral acid in which ZnO is soluble and at least one compound of a coordinating ligand for Zn2+ ions wherein the coordinating ligand compound is present in an amount that is eff...
01/11/2005
6760396Coated metal articles and method of making
The method of protectively coating metallic uranium which comprises dipping the metallic uranium in a molten alloy comprising about 20-75% of copper and about 80-25% of tin, dipping the coated uranium promptly into molten tin, withdrawing it from the molten tin and ...
07/06/2004
6491753Method for the growing of single crystals
To obtain large, high-quality crystals of a metal orthophosphate, in particular GaPO4 or AlPO4, from a nutrient solution with the use of seeds, a seed crystal is used having at least two rod- or wafer-shaped legs which form an angle ...
12/10/2002
6398867Crystalline gallium nitride and method for forming crystalline gallium nitride
A gallium nitride growth process forms crystalline gallium nitride. The process comprises the steps of providing a source gallium nitride; providing mineralizer; providing solvent; providing a capsule; disposing the source gallium nitride, mineralizer and...
06/04/2002
6048396Method for producing calcite-type calcium carbonate single crystal
This invention provides a method for producing calcite-type calcium carbonate single crystal available for optical elements, which can be carried out under relatively low temperature and low pressure conditions. The crystal growth process which comprises;...
04/11/2000
6001171ST-cut and AT-cut oriented seed bodies for quartz crystal synthesis and method for making the same
ST-cut and AT-cut quartz seed bodies (18,40) for quartz crystal synthesis and method (100) for making the same are disclosed. An extended quartz seed body (18) having an angle of about 42.75° rotated about a X axis (20) from a +Z axis (22) to a -Y axis (...
12/14/1999
5968265Method for producing silicon carbide monocrystals
A method for producing cubic SiC monocrystals includes dissolving SiC powder or other starting material in a solvent at high overpressures and growing the monocrystals on a seed crystal....
10/19/1999
5902396Ammonothermal growth of chalcogenide single crystal materials
Single crystals of binary and ternary compounds of alkaline earth and a chalcogen, with or without a transition element, are grown by: charging a reaction vessel with an alkaline earth chalcogenide, with or without a transition element or a halide thereof...
05/11/1999
5788765Crystals for ultraviolet light filters
Crystals formed of a solid-solution of K2 Ni(SO4)2 6H2 O provide very good materials for filtering ultraviolet light and will not deteriorate in temperatures as high as 110° C. They are particularly useful in s...
08/04/1998
5714005ST-cut and AT-cut oriented seed bodies for quartz crystal synthesis and method for making the same
ST-cut and AT-cut quartz seed bodies (18,40) for quartz crystal synthesis and method for making the same are disclosed. An extended quartz seed body (18) having an angle of about 42.75° rotated about a X axis (20) from a +Z axis (22) to a -Y axis (24) an...
02/03/1998
5533465Hydrothermal crystallization vessels
A seal apparatus is disclosed for sealing an outlet of a pressurized chamber from fluid loss from the chamber and contamination to the chamber. The apparatus includes certain combinations of (a) a chamber outlet structure; (b) a removable cover; (c) means...
07/09/1996
5456204Filtering flow guide for hydrothermal crystal growth
The present invention is a filtering flow guide for hydrothermal reaction vessels--such as crystal growth apparatus--which improves crystal production efficiency and crystal quality without significantly slowing down flow velocities or crystal growth time...
10/10/1995
5411723Process for reducing the damage susceptibility in optical quality crystals
A process is disclosed for treating a crystal of MTiOXO4 which has crystal structure deficiencies of M and O, wherein M is selected from the group consisting of K, Rb, Tl and NH4 and mixtures thereof and X is selected from the group ...
05/02/1995
5375556Hydrothermal process for growing large crystals or crystal layers
In order to obtain large, high-quality crystals or crystal layers of a me orthophosphate, in particular, GaPO4 or AlPO4, from a nutrient solution with the use of a seed plate, the proposal is put forward that in the initial phase of...
12/27/1994
5322591Hydrothermal growth on non-linear optical crystals
The growth of bismuth silicate crystals occurs in a high pressure vessel or autoclave using a hydrothermal growth process. The nutrient material is placed in a sealed container of noble metal, liner, along with a solvent to a selected fill level. A filler...
06/21/1994
5264073Hydrothermal process for growing optical-quality single crystals and aqueous mineralizer therefor
A hydrothermal process is disclosed for growing a crystal at MTiOXO4 wherein M is NH4, K, Rb and/or Tl or mixtures thereof with Cs and X is P and/or As, at elevated temperatures using a mineralizer comprising both M+1 and ...
11/23/1993
5123997Plenum type crystal growth process
Crystals are grown in a tank which is divided by a baffle into a crystal growth region above the baffle and a plenum region below the baffle. A turbine blade or stirring wheel is positioned in a turbine tube which extends through the baffle to generate a ...
06/23/1992
5122224Direct flow crystal growth system
A crystal is grown in a constantly filtered solution which is flowed directly into the growing face of a crystal. In a continuous flow system, solution at its saturation temperature is removed from a crystal growth tank, heated above its saturation temper...
06/16/1992
5069744Process for producing single crystals of optical calcite
A process is provided for producing single crystals of optical calcite by a hydrothermal method and comprises heating crystalline calcium carbonate, then crystalline calcium carbonate is recrystallized onto one seed plate arranged vertically in an inserti...
12/03/1991
5066356Hydrothermal process for growing optical-quality single crystals
A hydrothermal process for growing a crystal of MTiOXO4 at an elevated temperature is disclosed which employs a growth medium comprising a mineralizer solution, and is characterized as employing aqeuous mineralizer solution in which the concent...
11/19/1991
5006318Particulate compositions of rare earth oxide and method of making same
Particulate compositions of rare earth oxides wherein the particles are present in the form of single crystals of homogeneous size and morphology, the dimensions of which are less than or equal to 10 μm and greater than approximately 0.05 μm and that at...
04/09/1991
4990217Process for the preparation of berlinite crystals with high Q factor
The invention relates to a process for the preparation of berlinite crystals AlPO4, with a high Q factor, from seeds or crystalline flakes of AlPO4, by a hydrothermal method. It is characterized in that the crystallization solution i...
02/05/1991
4961823Method of manufacturing calcium carbonate single crystal
A starting material composed of calcium carbonate is dissolved in a nitrate aqueous solution containing either Ca(NO3)2 or NH4 NO3 under application of heat and pressure. The starting material is hydrothermally ...
10/09/1990
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