Did You Know...
...that Kleenex tissue was originally designed to be a gas mask filter? It was developed at the beginning of World War I to replace cotton, which was then in short supply as a surgical dressing.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7351283 | System and method for fabricating a crystalline thin structure A crystalline thin structure (104, 204, 404) is grown on a surface (108, 228) of a substrate (112, 208, 400) by depositing molecules (136, 220) from a molecular precursor to a lateral growth front (144, 224) of the structure using ... | 04/01/2008 |
| 7155866 | Cementitious exterior sheathing product having improved interlaminar bond strength The present invention provides exterior building products, such as roofing and siding, shake, shingles, siding, sheathing, panels, planks, vertical siding, soffit panels, fencing, decking, fascia, corner posts, column corners and trim boards in which a plurality of ... | 01/02/2007 |
| 7118625 | Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is suppl... | 10/10/2006 |
| 7048797 | Liquid-phase growth process and liquid-phase growth apparatus A liquid-phase growth process for continuously growing a crystal film on a plurality of substrates with respect to their one side surfaces, characterized in that said plurality of substrates are kept afloat on the surface of a flowing solution for liquid-phase epita... | 05/23/2006 |
| 7022181 | Liquid phase growth process, liquid phase growth system and substrate member production method In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucib... | 04/04/2006 |
| 6953506 | Wafer cassette, and liquid phase growth system and liquid-phase growth process which make use of the same A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member an... | 10/11/2005 |
| 6951584 | Apparatus for producing semiconductor thin films on moving substrates An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solut... | 10/04/2005 |
| 6946029 | Sheet manufacturing method, sheet, sheet manufacturing apparatus, and solar cell An inexpensive sheet with excellent evenness and a desired uniform thickness can be obtained by cooling a base having protrusions, dipping the surfaces of the protrusions of the cooled base into a melt material containing at least one of a metal material and a semic... | 09/20/2005 |
| 6902619 | Liquid phase epitaxy The invention provides a method of growing semiconductor epitaxial layers on a substrate comprising the steps of providing a substrate, providing at least a first growth solution and optionally one or more further ... | 06/07/2005 |
| 6869863 | Fabrication process of solar cell Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step. ... | 03/22/2005 |
| 6387780 | Fabrication process of solar cell Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step.... | 05/14/2002 |
| 6338755 | Method for producing a single crystalline member An amorphous film 2 is formed on a single crystalline substrate 1. Then, the amorphous film is selectively removed by photolithography to form windows 3. Subsequently, the windows 3 are contacted with a supersaturated solution 5 dissolving a given element... | 01/15/2002 |
| 6231667 | Liquid phase growth method and liquid phase growth apparatus A liquid phase growth apparatus of a dipping system has a plurality of liquid phase growth chambers and liquid phase growth operations of semiconductors are carried out on a plurality of substrates in the growth chambers. Another liquid phase growth appar... | 05/15/2001 |
| 5922126 | Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder The disclosed semiconductor liquid phase epitaxial growth method and apparatus and the wafer holder used therefor can improve the deposition of polycrystal, the non-uniformity of film thickness, the thermal deterioration of the substrate, etc. The wafer h... | 07/13/1999 |
| 5846319 | Method and apparatus for formation of HgCdTe infrared detection layers employing isothermal crystal growth A system and method for isothermally growing HgCdTe having improved material uniformity and run-to-run repeatability employs a growth solution vessel in which a substrate may be inserted. The growth solution is heated and maintained at a constant temperat... | 12/08/1998 |
| 5616176 | Oxide garnet single crystal A novel rare earth-based oxide garnet single crystal suitable as a material of the elements in a magneto-optical device to exhibit a greatly decreased light absorption loss is proposed, which is prepared by the liquid epitaxial growth method on a oxide ga... | 04/01/1997 |
| 5603762 | Process and apparatus for the production of films of oxide type single crystal A process is disclosed for producing a film of an oxide type single crystal on a substrate of such an oxide type single crystal by epitaxially growing the oxide type single crystal on the substrate through contacting the substrate onto a melt in an overco... | 02/18/1997 |
| 5544616 | Crystallization from high temperature solutions of Si in Cu/Al solvent A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3×1016 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % ... | 08/13/1996 |
| 5539569 | Optoelectric articles and a process for producing the same According to the invention, a film of optoelectric single crystal may be formed on a substrate made of optoelectric single crystal by a liquid phase epitaxial process. The process comprises the steps of producing a melt of a solute and a melting medium, a... | 07/23/1996 |
| 5512511 | Process for growing HgCdTe base and contact layer in one operation A method for fabricating a two layer epitaxial structure by a liquid phase epitaxy (LPE) process, the structure being comprised of a Group II-VI semiconductor material. The method includes the steps of providing an LPE growth chamber that contains a molte... | 04/30/1996 |
| 5362683 | Method of making epitaxial wafers To manufacture epitaxial wafers with a smaller amount of semiconductor crystals at a lower cost by means of an efficient epitaxial growth process. An epitaxial wafer is made by forming, by means of epitaxial growth, GaAlAs layers with identical structures... | 11/08/1994 |
| 5314571 | Crystallization from high temperature solutions of Si in copper A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X1016 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a t... | 05/24/1994 |
| 5277746 | High pressure liquid phase epitaxy reactor chamber and method with direct see through capability An apparatus (10) and method are provided for directly viewing, through a viewport assembly (26), the process for forming a layer of mercury cadmium telluride of a predetermined composition on a surface of a wafer (not shown). According to the invention, ... | 01/11/1994 |
| 5234534 | Liquid-phase growth process of compound semiconductor A liquid-phase growth process of a compound semiconductor which is capable of effectively controlling the generation of a surface defect and improve the product quality and production yield is disclosed in which before the start of liquid-phase growth, a ... | 08/10/1993 |
| 5039187 | M1-x Nx TiAs1-a Pa O5 waveguides grown by liquid phase epitaxy and process of making same Optical waveguides prepared by liquid phase epitaxy comprising a film of M1-x Nx TiAs1-a Pa O5 on a substrate of MTiAs1-(a+b) O5 P.sub.(a+30 b) is disclosed.... | 08/13/1991 |
| 4961819 | Synthesis in flux of crystals and epitaxies from from isotypic solid solutions of KTiOPO4 The synthesis in flux of KTP and its isotypes of the formula Ka Rb1-a TiOPb As1-b O4 comprises: the use of the hydroxides of potassium and rubidium as flux, heating to a temperature of 600° to 800° C. for abo... | 10/09/1990 |
| 4810325 | Liquid-phase-epitaxy deposition method in the manufacture of devices Epitaxial layers are grown from a body of molten material which includes flux and layer constituent components; included in the flux are lead oxide and a small amount of boron trioxide. As compared with prior-art processing in the absence of boron trioxid... | 03/07/1989 |
| 4690726 | Liquid phase epitaxial growth of bismuth-containing garnet films Epitaxial layers of bismuth-containing magnetic garnet materials are grown from a melt which comprises flux components lead oxide, bismuth oxide, and one or several additional oxides selected from vanadium oxide, tungsten oxide, molybdenum oxide, and chro... | 09/01/1987 |
| 4675207 | Process and apparatus for the deposition on a substrate of a thin film of a compound containing at least one cationic constituent and at least one anionic constituent The invention relates to a process for the depositing on a substrate a thin film or layer of a compound having at least one cationic constituent C and at least one anionic constituent A, such as zinc sulphide. On the substrate are formed at least two superimpo... | 06/23/1987 |
| 4614672 | Liquid phase epitaxy (LPE) of silicon carbide A method for making cubic SiC devices comprising the steps of preparing a preform consisting of high purity Si on which a layer of cubic SiC has been deposited by CVD; transferring the preform to a furnace containing a molten bath of Si saturated with SiC... | 09/30/1986 |
| 4589737 | Doped and undoped single crystal multilayered structures Disclosed is a multilayer electro-optical material having a plurality of adjacent, single crystals wherein each crystal layer has different electrical and optical properties from its adjacent layer or layers. This material is made by a method wherein the ... | 05/20/1986 |
| 4544438 | Liquid phase epitaxial growth of bismuth-containing garnet films Epitaxial layers of bismuth containing magnetic garnet materials are grown from a melt which comprises flux components lead oxide, bismuth oxide, and one or several additional oxides selected from vanadium oxide, tungsten oxide, and molybdenum oxide. The ... | 10/01/1985 |
| 4540461 | Silver thiogallate single crystal layers epitaxially grown from potassium chloride-silver thiogallate solution A method of making a thin, high purity single crystal layer of silver thiogallate. According to the preferred embodiment of this method, a seed crystal substrate of silver thiogallate is dipped into a molten solution of silver thiogallate dissolved in pot... | 09/10/1985 |
| 4534822 | Method of synthesizing thin, single crystal layers of silver thiogallate (AgGaS2) A method of growing a single crystal layer of silver thiogallate having a maximum thickness of 50 micrometers. This crystal is of a high purity having a higher degree of crystalline perfection than the substrate on which it is grown. The crystal is grown ... | 08/13/1985 |
| 4474640 | In situ differential thermal analysis for HgCdTe LPE For HgCdTe liquid phase epitaxy (LPE), in situ differential thermal analysis apparatus is used to precisely monitor the liquidus temperature of each HgCdTe melt. The neutral body, e.g. a slug of copper enclosed in a silica ampoule, is placed near the LPE ... | 10/02/1984 |
| 4461671 | Process for the manufacture of semiconductor wafers The invention relates to a process for the direct manufacture of semiconductor wafers, wherein the semiconductor wafers are obtained from molten semiconductor material by providing an area of the surface of the semiconductor melt that corresponds approxim... | 07/24/1984 |
| 4389274 | Electrochemical deoxygenation for liquid phase epitaxial growth A method for removing residual oxygen from a growth solution prior to liq phase epitaxial crystal growth comprising the steps of disposing the materials in a containment vessel of a solid oxide electrolyte material under a protective atmosphere, heating ... | 06/21/1983 |
| 4315477 | Semi-open liquid phase epitaxial growth system Disclosed is a semi-open method of growing an epitaxial HgCdTe layer on a CdTe substrate, including the steps of placing the CdTe substrate and a growth solution of Hg, Cd, and Te within a pressure and temperature controlled container, flowing an inert ga... | 02/16/1982 |
| 4293371 | Method of making magnetic film-substrate composites Magnetic film-substrate composites of enhanced quality are provided by rotating a garnet substrate immersed in a melt of magnetic film material to obtain a growth of magnetic film having uniaxial anistropy on the substrate normal to the substrate surface ... | 10/06/1981 |
| 4285911 | Device for growing a crystalline layer on a substrate A magnetic epitaxial layer containing the rare earths yttrium and samarium is grown on a gadolinium-gallium substrate which moves vertically in the melt during the growth process. The substrate remains immersed in a melt containing oxides of iron and the ... | 08/25/1981 |
