Did You Know...
...that the video game, Pong, was invented by a guy who graduated at the bottom of his engineering class? Nolan Bushnell spent more time running the games at a local amusement park than he did on his studies at the University of Utah. His dreams of working for Disney's amusement empire were dashed when the company wouldn't hire him. Taking a boring job, Nolan daydreamed about electronic versions of popular games. He invented Pong, the first video game, and went on to found Atari Co.
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| Number | Title | Issue Date |
| 7326293 | Patterned atomic layer epitaxy A patterned layer is formed by removing nanoscale passivating particle from a first plurality of nanoscale structural particles or by adding nanoscale passivating particles to the first plurality of nanoscale structural particles. Each of a second plurality of nanos... | 02/05/2008 |
| 7311008 | Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure A semiconductor structure comprises a stress sensitive element. A property of the stress sensitive element is representative of a stress in the semiconductor structure. Additionally, the semiconductor structure may comprise an electrical element. The stress sensitiv... | 12/25/2007 |
| 7168852 | Method and a device for thermal analysis of cast iron The present invention provides a novel method and a system of modules for carrying out thermal analysis of cast iron melts. The characterizing step of the method is de-termination of the position of the thermocouples used for recording cooling curves. The system com... | 01/30/2007 |
| 7074270 | Method for predicting the behavior of dopant and defect components Techniques for predicting the behavior of dopant and defect components in a substrate lattice formed from a substrate material can be implemented in hardware or software. Fundamental data for a set of microscopic processes that can occur during one or more material ... | 07/11/2006 |
| 7014711 | Liquid-phase growth apparatus and method A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors... | 03/21/2006 |
| 6932864 | Method and apparatus for measuring the position of a phase interface during crystal growth In the method and apparatus for measuring the position of the phase interface during growth of a crystal from a melt in a crystal growth container according to the VGF method an incident optical signal is propagated to the phase interface between the melt and the cr... | 08/23/2005 |
| 6902619 | Liquid phase epitaxy The invention provides a method of growing semiconductor epitaxial layers on a substrate comprising the steps of providing a substrate, providing at least a first growth solution and optionally one or more further ... | 06/07/2005 |
| 6685772 | De novo processing of electronic materials Computer programs and computer-implemented methods for predicting from first principles the behavior of dopants and defects in the processing of electronic materials. The distribution of dopant and defect components in a substrate lattice is predicted bas... | 02/03/2004 |
| 6383286 | Method of making semiconductor super-atom and aggregate thereof The present invention probides a novel method for fabricating a semiconductor super-atom and an aggregate thereof, which allows the formation of a semiconductor nano-structure with a diameter in the order of 10 nm, which is meant for constituting a core, ... | 05/07/2002 |
| 6231667 | Liquid phase growth method and liquid phase growth apparatus A liquid phase growth apparatus of a dipping system has a plurality of liquid phase growth chambers and liquid phase growth operations of semiconductors are carried out on a plurality of substrates in the growth chambers. Another liquid phase growth appar... | 05/15/2001 |
| 6059878 | Method of manufacturing a bismuth-substituted rare-earth iron garnet single crystal film A method is used when manufacturing a bismuth-substituted rare-earth iron garnet single crystal (BIG) film by the LPE method. The BIG film is grown on one side of a non-magnetic garnet substrate using a melt that contains flux components and rare-earth ox... | 05/09/2000 |
| 5695556 | Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination By applying the method, the critical film thickness of a compound semiconductor layer is determined, and a semiconductor device having a compound semiconductor layer with an optimized film thickness excellent in emitting performance is manufactured. The r... | 12/09/1997 |
| 5500390 | Method for control of Si concentration in gallium phosphide single crystal layer by liquid phase epitaxial growth technique A method for controlling the Si concentration in a GaP single crystal layer grown in a series of runs of GaP liquid phase epitaxial growth with the repeated use of one and the same Ga solution, which comprise the steps of: measuring the Si concentrations ... | 03/19/1996 |
| 5277746 | High pressure liquid phase epitaxy reactor chamber and method with direct see through capability An apparatus (10) and method are provided for directly viewing, through a viewport assembly (26), the process for forming a layer of mercury cadmium telluride of a predetermined composition on a surface of a wafer (not shown). According to the invention, ... | 01/11/1994 |
| 5232547 | Simultaneously measuring thickness and composition of a film A semiconductor wafer (11) with a lattice mismatched film (12) on its upper surface is placed on a flat support surface (15). A laser beam (13, 23, 24, 26, 27) is directed onto the film (12). Curvature of the semiconductor wafer caused by the film (12) is... | 08/03/1993 |
| 4906325 | Method of making single-crystal mercury cadmium telluride layers A method of making symmetrical mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communicating zones, kept at different and controlled temperatures. Growth solution is directly prepa... | 03/06/1990 |
| 4872943 | Process for making monocrystalline HGCDTE layers A process for making single-crystal mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communication zones, kept at different and controlled temperatures. The growth solution is direc... | 10/10/1989 |
| 4685995 | Process for manufacturing calcium carbonate single crystal Calcium carbonate single crystal, which can be optically used and industrialized, is produced by hydrothermal synthesis method in which the single crystal over species crystal is grown by using NaCl or KCl or LiCl aqueous solution under fixed temperature ... | 08/11/1987 |
| 4661175 | Method of making InGaAsP and InGaAs double hetero-structure lasers and LEDs A method is provided for manufacturing a double hetero-structure of InGaAsP/InP, or, alternatively of InGaAs/InP, for use in lasers and LEDs by means of liquid phase epitaxy. The resulting structures emit optical radiation up to a wavelength of about 1.7 ... | 04/28/1987 |
| 4474640 | In situ differential thermal analysis for HgCdTe LPE For HgCdTe liquid phase epitaxy (LPE), in situ differential thermal analysis apparatus is used to precisely monitor the liquidus temperature of each HgCdTe melt. The neutral body, e.g. a slug of copper enclosed in a silica ampoule, is placed near the LPE ... | 10/02/1984 |
| 4343674 | Monitoring indium phosphide surface composition in the manufacture of III-V Indium phosphide stoichiometry in III-V semiconductor devices is sensitive to processing conditions during liquid phase epitaxy deposition. Disclosed is a method for determining indium-to-phosphorus ratio in an n-type indium phosphide semiconductor surfac... | 08/10/1982 |
| 4269651 | Process for preparing temperature-stabilized low-loss ferrite films In the preferred embodiment, a monocrystalline film of substituted yttrium iron garnet (YIG) deposited on a oriented gadolinium gallium garnet (GGG) substrate is formulated so that the temperature variation of the ferromagnetic resonance frequency o... | 05/26/1981 |
| 4110133 | Growth of semiconductor compounds by liquid phase epitaxy A method of growing semiconductor compounds which are formed from elements of group III with elements of group V by liquid phase epitaxy. A suitable solvent is provided in contact with a source of the compound to be grown, the solution is heated to a pred... | 08/29/1978 |
| 4096024 | Method for controlling the solidification of a liquid-solid system and a device for the application of the method The growth of a solid obtained by cooling a liquid solution is observed and controlled by measuring the variation in volume of the solid-liquid system at the time of solidification. The method is applicable to the control of oriented crystallization from ... | 06/20/1978 |
| 4050964 | Growing smooth epitaxial layers on misoriented substrates A process for improving the smoothness of semiconductor layers grown by epitaxy is described. Smooth epitaxial layers, free of crystal terraces, are attained by misorienting the growth surface of the substrate from a major crystallographic plane by a smal... | 09/27/1977 |
| 3994755 | Liquid phase epitaxial process for growing semi-insulating GaAs layers Disclosed is a process for fabricating chromium-doped semi-insulating epitaxial layers of gallium arsenide which includes contacting a gallium arsenide substrate with a chromium-doped saturated solution of gallium arsenide in gallium and maintaining the s... | 11/30/1976 |
