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| Number | Title | Issue Date |
| 8157912 | Method of converting PCA to sapphire and converted article Polycrystalline alumina (PCA) that has been doped with magnesium oxide is converted to sapphire by additionally doping the PCA with boron oxide and sintering to induce abnormal grain growth. The boron oxide may be added to an already formed green PCA ceramic shape b... | 04/17/2012 |
| 8118932 | Technique for monitoring dynamic processes in metal lines of microstructures By locally heating specific scan positions within a region of interest and automatically obtaining respective measurement data in a time-resolved and spatially-resolved fashion, dynamic processes within a metallization layer of semiconductor devices may be efficient... | 02/21/2012 |
| 8105435 | Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device The inhomogeneous energy distribution at the beam spot on the irradiated surface is caused by a structural problem and processing accuracy of the cylindrical lens array forming an optical system. According to the present invention, in the optical system for forming ... | 01/31/2012 |
| 8088219 | Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an areal proportion of 10% to 100% of the planar area ... | 01/03/2012 |
| 8052789 | Polycrystalline silicon and crystallization method thereof Disclosed are a polycrystalline silicon and a crystallization method thereof according to an exemplary embodiment of the present invention. The polycrystalline silicon comprises: an insulating substrate; and an optical portion formed on the insulating substrate for ... | 11/08/2011 |
| 8052790 | Mask for silicon crystallization, method of forming poly-silicon thin film, and manufacturing method of thin film transistor A silicon crystallization mask of the present invention includes; a main exposure portion including a plurality of complete light transmission regions which completely transmit light therethrough, and a preliminary exposure portion including a plurality of incomplet... | 11/08/2011 |
| 7985294 | Optical device and method of manufacturing the same An optical device and a method of manufacturing the optical device, with the method including the steps of forming a dopant layer on a stoichiometric lithium niobate single crystal substrate with Li to Nb mole composition ratio of 49.5% to 50.5%, and diffusing a dop... | 07/26/2011 |
| 7981212 | Flash lamp annealing device A flash lamp annealing device comprises a heater plate, a loader, a lamp set and a control circuit. The heater plate heats a wafer to a predetermined temperature. The wafer is loaded on the loader disposed on the heater plate. The lamp set has one or a plurality of ... | 07/19/2011 |
| 7967910 | Fine structure body, process for producing the same, and Raman spectroscopic method and apparatus A fine structure body comprises: (i) a base body, and (ii) a plurality of metal nanorods, which have been distributed and located on a surface of the base body, a proportion X being equal to at least 15%, the proportion X being calculated with the formula: ... | 06/28/2011 |
| 7955432 | Phase modulation device, phase modulation device fabrication method, crystallization apparatus, and crystallization method A phase shifter which modulates the phase of incident light has a light-transmitting substrate such as a glass substrate, and a phase modulator such as a concavity and convexity pattern which is formed on the laser beam incident surface of the light-transmitting sub... | 06/07/2011 |
| 7942965 | Method of fabricating plasma reactor parts A method of fabricating silicon parts are provided herein. The method includes growing a silicon sample, machining the sample to form a part, and annealing the part by exposing the part sequentially to one or more gases. Process conditions during silicon growth and ... | 05/17/2011 |
| 7927421 | Light irradiation apparatus, light irradiation method, crystallization apparatus, crystallization method, and semiconductor device A light irradiation apparatus irradiates a target plane with light having a predetermined light intensity distribution. The apparatus includes a light modulation element having a light modulation pattern of a periodic structure represented by a primitive translation... | 04/19/2011 |
| 7887632 | Process for producing monocrystal thin film and monocrystal thin film device The present invention provides a method for manufacturing a monocrystalline film and a device formed by the above method, and according to the method mentioned above, lift-off of the monocrystalline silicon film is preferably performed and a high-purity monocrystall... | 02/15/2011 |
| 7837790 | Formation and treatment of epitaxial layer containing silicon and carbon Methods and apparatus for formation and treatment of epitaxial layers containing silicon and carbon are disclosed. Treatment of the epitaxial layer converts interstitial carbon to substitutional carbon. Specific embodiments pertain to the formation and treatment of ... | 11/23/2010 |
| 7794538 | Self-assembly method, opal, photonic band gap, and light source A suspension of particles is rapidly self-assembled with a minimal number of defects into a three-dimensional array of particles onto a substrate under simultaneous sedimentating and annealing forces. This array of particles may be ordered as an opal structure. Opti... | 09/14/2010 |
| 7776151 | Method and apparatus for forming crystalline portions of semiconductor film A crystallization method which generates a crystallized semiconductor film by irradiating at least one of a polycrystal semiconductor film and an amorphous semiconductor film with light beams having a light intensity distribution with an inverse peak pattern that a ... | 08/17/2010 |
| 7749323 | Single crystal for scintillator and method for manufacturing same A single crystal for a scintillator that is a specific single crystal of a cerium-activated orthosilicate compound that comprises 0.00005 to 0.1 wt. %, based on the entire weight of the single crystal, of at least one element selected from a group consisting of elem... | 07/06/2010 |
| 7736433 | BaTiO—PbTiOseries single crystal and method of manufacturing the same, piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the po... | 06/15/2010 |
| 7718000 | Method and article of manufacture corresponding to a composite comprised of ultra nonacrystalline diamond, metal, and other nanocarbons useful for thermoelectric and other applications One provides (101) disperse ultra-nanocrystalline diamond powder material that comprises a plurality of substantially ordered crystallites that are each sized no larger than about 10 nanometers. One then reacts (102) these crystallites with a metallic ... | 05/18/2010 |
| 7569109 | Single crystal scintillator materials and methods for making the same A method of making a rare earth halide single crystal material is provided. The method includes providing a polycrystalline material having a plurality of grains. The method further includes adding a seed crystal to the polycrystalline material to define a plane of ... | 08/04/2009 |
| 7553366 | Laser beam pattern mask and crystallization method using the same A laser beam pattern mask includes at least one or more transmitting parts, each transmitting part having a central portion and a pair of edge portions provided to both sides of the central portion, each having a substantially triangular shape defined by a virtual b... | 06/30/2009 |
| 7520931 | Single crystal scintillator materials and methods for making the same A method of making a single crystal material is provided. The method includes providing a polycrystalline material having a plurality of grains. The method further includes adding a seed crystal to the polycrystalline material to define a plane of growth for the pol... | 04/21/2009 |
| 7520930 | Silicon carbide single crystal and a method for its production A bulk silicon carbide single crystal of good crystalline quality which includes a minimized number of structural defects and is free from micropipe defects can be produced by crystal growth in a melt of an alloy comprising Si, C, and M (wherein M is either Mn or Ti... | 04/21/2009 |
| 7507290 | Flux assisted solid phase epitaxy A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flu... | 03/24/2009 |
| 7507289 | Electroconductive 12CaO—7Al2O3 and compound of same type, and method for preparation thereof In a solid solution system of Al2O3 and CAO or SrO, it has been difficult to obtain a material having a high electrical conductivity (>10−4 S·cm−) at room temperature. A compound is provided in which electrons ... | 03/24/2009 |
| 7503975 | Semiconductor device and fabrication method therefor In a crystalline silicon film fabricated by a related art method, the orientation planes of its crystal randomly exist and the orientation rate relative to a particular crystal orientation is low. A semiconductor material which contains silicon as its main component... | 03/17/2009 |
| 7442250 | Lithium tantalate substrate and method for producing same A lithium tantalate substrate obtained by working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment carried out at a temperature kept ... | 10/28/2008 |
| 7438759 | Ambient environment nanowire sensor An ambient environment nanowire sensor and corresponding fabrication method have been provided. The method includes: forming a substrate such as Silicon (Si) or glass; growing nanowires; depositing an insulator layer overlying the nanowires; etching to expose tips o... | 10/21/2008 |
| 7422630 | Fabrication method of semiconductor device Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorp... | 09/09/2008 |
| 7419547 | Method for marking a crystalline material using cathodoluminescence In a first exemplary embodiment of the present invention, a method is provided for marking a sample of a doped crystalline material. According to a feature of the present invention, the method comprises the steps of causing a controlled alteration to the crystalline... | 09/02/2008 |
| 7416605 | Anneal of epitaxial layer in a semiconductor device An anneal of an epitaxially grown crystalline semiconductor layer comprising a combination of group-IV elements. The layer contains at least one of the group of carbon and tin. The layer of epitaxially grown material is annealed at a temperature substantially in a r... | 08/26/2008 |
| 7413604 | Process for producing polysilicon film The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grai... | 08/19/2008 |
| 7393409 | Method for making large-volume CaFsingle cystals with reduced scattering and improved laser stability, the crystals made by the method and uses thereof The method provides CaF2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2 starting material is heat-treated for at... | 07/01/2008 |
| 7374613 | Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparation Disclosed is a ceramic or metal single-crystal material having high-density dislocations arranged one-dimensionally on respective straight lines. The single-crystal material is produced by compressing a ceramic or metal single-crystal blank at a high temperature fro... | 05/20/2008 |
| 7369828 | Electronically tunable quad-band antennas for handset applications An electronically tunable quad-band antenna which includes a tunable high band antenna tuned by at least one tunable varactor associated therewith; the tunable high band antenna further includes a substrate, a patch element on said substrate, at least one voltage tu... | 05/06/2008 |
| 7368204 | Mask for laser crystallization and crystallization method using the same A mask for laser crystallization includes a transmissive portion defining a crystallization pattern and an alignment pattern. The alignment pattern includes a first pattern group having a size corresponding to the crystallization pattern and a second pattern group h... | 05/06/2008 |
| 7361217 | Method for crystallising a melamine melt Method for crystallizing a melamine melt to form melamine particles with a D90 of at most 2 mm by cooling a melamine melt to below the crystallization temperature of the melamine, comprising the formation of a suspension of melamine particles in the cooli... | 04/22/2008 |
| 7357963 | Apparatus and method of crystallizing amorphous silicon A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of... | 04/15/2008 |
| 7357838 | Relaxed silicon germanium substrate with low defect density A method of forming a strained silicon layer on a relaxed, low defect density semiconductor alloy layer such as SiGe is provided. ... | 04/15/2008 |
| 7347897 | Crystallization apparatus, crystallization method, and phase modulation device A crystallization apparatus of the present invention irradiates a non-single-crystal semiconductor film with a luminous flux having a predetermined light intensity distribution to crystallize the film, and comprises a phase modulation device comprising a plurality o... | 03/25/2008 |
