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| Number | Title | Issue Date |
| 7396405 | Single crystal, single crystal wafer, epitaxial wafer, and method of growing single crystal There is disclosed a single crystal obtained by a single crystal pulling method, wherein an interval of striations incorporated into the single crystal due to temperature fluctuation of crystal melt at the time of crystal growth is controlled, and a method of growin... | 07/08/2008 |
| 7316746 | Crystals for a semiconductor radiation detector and method for making the crystals A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone... | 01/08/2008 |
| 7279040 | Method and apparatus for zinc oxide single crystal boule growth There is provided a method for growing one or more single crystal ZnO boules within a physical vapor transport furnace system. This method includes the steps of: (a.) placing a source material at a first end of an interior crucible enclosure and placing one or more ... | 10/09/2007 |
| 7252880 | Tape and wrapping materials with edge-finding feature A flexible material such as a transparent tape includes a material which enhances the visibility of a newly formed edge. The material can include a fluorescent dye disposed in the tape, or can be a material which reacts with oxygen, moisture or some other component ... | 08/07/2007 |
| 7147711 | Method of producing silicon wafer and silicon wafer The present invention provides a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 Ω·cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma and doped with nitrogen by the ... | 12/12/2006 |
| 7090724 | Langasite single crystal ingot, substrate for piezoelectric device and method for manufacture thereof, and surface acoustic wave device The contents by weight ratio of lanthanum oxide, gallium oxide, and silicon oxide, which are components, in the longitudinal cross-section and transverse cross-section of the straight part, excluding the shoulder part, of a Langasite single crystal ingot grown by pu... | 08/15/2006 |
| 7014699 | Oxalkylation products produced from epoxides and amines and their use in pigment preparations The invention relates to addition compounds of formula (1): in which: n is a number from 1 to 10; R1 and R2 are identical or different and are each a hydrogen atom or a saturated or unsaturated ali... | 03/21/2006 |
| 6949140 | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device A group-III nitride crystal growth method, comprising the steps of: a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal; b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixe... | 09/27/2005 |
| 6821337 | Preparation of nanocrystallites A method of manufacturing a nanocrystallite from a M-containing salt forms a nanocrystallite. The nanocrystallite can be a member of a population of nanocrystallites having a narrow size distribution and can include one or more semiconductor materials. Semiconductin... | 11/23/2004 |
| 6780239 | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device A crystal growth method, comprising the steps of: a) bringing a nitrogen material into a reaction vessel in which a mixed molten liquid comprising an alkaline metal and a group-III metal; and b) growing a crystal of a group-III nitride using the mixed molten liquid ... | 08/24/2004 |
| 6695912 | Method for growing laser crystals A method for growing solid state laser crystal boules is disclosed that when made into laser rods do not need separate end caps attached to the laser rods. The crystal boule is grown as a single integral unit with three segments. Two segments, the end seg... | 02/24/2004 |
| 6673147 | High resistivity silicon wafer having electrically inactive dopant and method of producing same An improved method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors provided by: a) using the CZ method to grow a silicon single crystal ingot h... | 01/06/2004 |
| 6669775 | High resistivity silicon wafer produced by a controlled pull rate czochralski method A method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors, and while further minimizing in-grown defects is provided by: a) using the CZ method ... | 12/30/2003 |
| 6669777 | Method of producing a high resistivity silicon wafer utilizing heat treatment that occurs during device fabrication A high resistivity wafer which does not exhibit diminishing resistivity after device installation and method of making the high resistivity wafer comprising a) using the CZ method to grow a silicon single crystal ingot with a resistivity of 100 Ω.multido... | 12/30/2003 |
| 6387466 | Single-crystal silicon wafer The high quality silicon wafer of large diameter is invented by mainly paying attention to the particles ascribed to the crystal and the wafer is optimal for manufacturing ultra highly integrated devices. The silicon wafer is of diameter of 300 mm and lar... | 05/14/2002 |
| 6153125 | BaM2 O4 oxide single crystal having non-linear optical property and manufacturing method thereof An oxide single crystal having a nominal composition expressed BaM2 O4 (M is at least an element selected from the group consisting of Al and Ga), M of which is partially substituted with B, is provided. The BaM2 O4 | 11/28/2000 |
| 6059875 | Method of effecting nitrogen doping in Czochralski grown silicon crystal A method of introducing nitrogen into a melt for use in producing a nitrogen-doped silicon single crystal by the Czochralski method includes adding a silicon material to a vessel, such as a quartz crucible, adding a nitrogen-containing powder, preferably ... | 05/09/2000 |
| 5962374 | Preparation of oxide crystals A process for preparing an oxide crystal by means of solution growth in the presence of a solvent is provided. The solvent includes a mixture of an oxide containing at least one member of those elements which constitute the oxide crystal, a halide contain... | 10/05/1999 |
| 5940417 | CsB3 O 5 crystal and its nonlinear optical devices The present invention relates to single crystals of CsB3 O5 having large dimension and high quality which can be grown by pulling methods. The single crystals of CsB3 O5 are useful as NLO materials. The NLO devi... | 08/17/1999 |
| 5851284 | Process for producing garnet single crystal According to the process of the present invention for producing a garnet single crystal fiber, a crystal is grown while the direction of a seed crystal, corresponding to the direction of growth, is set in a direction having angles of at least 10° from a ... | 12/22/1998 |
| 5833939 | Ba(B1- x Mx)2 O4 single crystal and synthesis thereof A low-temperature phase oxide single crystal having a nominal composition of Ba(B1-x Mx)2 O4 is synthesized by partially substituting B of BaB2 O4 with one or more additive elements M and b... | 11/10/1998 |
| 5788764 | KTP solid solution single crystals and process for the production thereof Disclosed are a process for the production of solid solution single crystals of KTiOPO4 wherein a part or all of at least one of the elements, K, Ti and P is substituted with one or more other elements, which comprises moving a grown part(s) of... | 08/04/1998 |
| 5785753 | Single crystal manufacturing method In a single-crystal manufacturing method, after a single crystal is grown, the crystal is separated from the molten melt and gradually cooled while suspended immediately above the surface of the melt. During this cooling, a measure, which produces solidif... | 07/28/1998 |
| 5652192 | Catalyst material and method of making The material of the present invention is a mixture of catalytically active material and carrier materials, which may be catalytically active themselves. Hence, the material of the present invention provides a catalyst particle that has catalytically activ... | 07/29/1997 |
| 5632811 | Method of retaining melt of oxide In order to stably retain an oxide-based melt consisting essentially of yttrium or a lanthanoid element, barium, copper and oxygen at a prescribed temperature with no impurity contamination thereby preparing a large oxide crystal of high quality from the ... | 05/27/1997 |
| 5602081 | Method of preparing metal oxide crystal A method of preparing a crystal of a Y-series 123 metal oxide is disclosed, in which a substrate is immersed in a liquid phase which comprises components constituting the metal oxide. The liquid phase contains a solid phase located at a position different... | 02/11/1997 |
| 5593496 | Slurry crystallization method using bubbles directed at a heat exchanger A surface-cooled fluid bed crystallizer apparatus and method are disclosed wherein submerged heat exchanger surfaces (typically heat exchanger tubes or plates through which a coolant is passed) are bathed with a stream of gas bubbles (preferably air). The... | 01/14/1997 |
| 5454345 | Method of growing single crystal of ଲ-barium borate In growing a single crystal of ଲ-BaB2 O4 from a melt of BaB2 O4 by the Czochralski method, crushed single crystal particles of either ଲ-BaB2 O4 or -BaB2 O4 | 10/03/1995 |
| 5407907 | Method of preparing metal oxide crystal A method of pulling a crystal of a metal oxide is disclosed, in which the growth of the crystal is performed in a liquid phase having a composition which is different from the metal oxide and which contains components constituting the metal oxide. The liq... | 04/18/1995 |
| 5381754 | CsB3 O5 crystal and its nonlinear optical devices The present invention relates to single crystals of CsB3 O5 having large dimension and high quality which can be grown by pulling methods. The single crystals of CsB3 O5 are useful as NLO materials. The NLO devi... | 01/17/1995 |
| 5370076 | Method of producing single crystal of KTiOPO.sub.4 A method of growing a single crystal of KTiOPO.sub.4 which is a nonlinear optical material is disclosed. Growth of the single crystal of KTiOPO.sub.4 is carried out by melting a KTiOPO.sub.4 material with a flux to produce a melt, then contacting a seed c... | 12/06/1994 |
| 5334365 | Single cesium titanyl arsenate-type crystals, and their preparation A flux process is disclosed for producing a single orthorhombic crystal of Cs1-x Mx TiOAsO4 (where M is Na, K, Rb, and/or Tl and x is from 0 to 0.4) wherein the dimension of the crystal along each axis is at least about 2 ... | 08/02/1994 |
| 5322588 | Method for producing KTIOPO4 single crystal A method is provided for producing a KTiOPO4 which is grown at a temperature higher than its Curie temperature using a TSSG method. The grown KTiOPO4 single crystal is maintained in contact with a melt while the crystal is maintained... | 06/21/1994 |
| 5186784 | Process for improved doping of semiconductor crystals Doping of IIIB-VB semiconductor crystals grown by the liquid encapsulated Cyochralski techniques is improved by introducing a metal to the crucible. The metal is characterized as having a lower melting temperature and a lower free energy of oxide formatio... | 02/16/1993 |
| 5160401 | Method of growing mixed crystals from melts of oxidic multicomponent systems A method of growing mixed crystals having two lattice sites, each of which having a different number of adjoining oxygen ions, from melts of oxidic multicomponent systems, homogeneous mixed crystals being grown in such a manner that the cations which are ... | 11/03/1992 |
| 5057487 | Crystal growth method for Y-Ba-Cu-O compounds Methods of growing Y-Ba-Cu-O compound crystal by suspended pellet partial melting and cooling and by skill melting, with crystal pulling after nucleation on a small platinum wedge or epitaxial growth on an inserted substrate.... | 10/15/1991 |
| 5047112 | Method for preparing homogeneous single crystal ternary III-V alloys A method for producing homogeneous, single-crystal III-V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner flo... | 09/10/1991 |
| 5030315 | Methods of manufacturing compound semiconductor crystals and apparatus for the same A method of manufacturing compound semiconductor crystals, comprising the steps of, providing a compound semiconductor melt in a crucible, said melt having a composition ratio which deviates from stoichiometry, pulling a compound semiconductor crystal fro... | 07/09/1991 |
| 4997515 | Method of synthesizing single-crystal KTiOPO4 Single-crystal KTiOPO4 is synthesized by a method that includes using KH2 PO4, K2 CO3, and TiO2 as starting materials and using WO3 as a flux material. These materials are mixed toget... | 03/05/1991 |
| 4792377 | Flux growth of sodium beta" alumina A method for growing crystals of sodium beta" alumina is described. The crystals are grown by Czochralski type processes or analogous methods wherein single crystals are formed from a flux or melt. The melt is a eutectic type liquid primarily containing N... | 12/20/1988 |
