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| Number | Title | Issue Date |
| 8097080 | Method of cutting single crystals A method of dividing single crystals, particularly of plates of parts thereof, is proposed, which can comprise: pre-adjusting the crystallographic cleavage plane (2′) relative to the cleavage device, setting a tensional intensity (K) by means of tensional f... | 01/17/2012 |
| 7993453 | Method for producing silicon carbide single crystal A method for the production of an SiC single crystal includes the steps of growing a first SiC single crystal in a first direction of growth on a first seed crystal formed of an SiC single crystal, disposing the first SiC single crystal grown on the first seed cryst... | 08/09/2011 |
| 7534295 | III nitride single crystal manufacturing method A III nitride single-crystal manufacturing method in which a liquid layer (3) of 200 μm or less thickness is formed in between a substrate (1) and a III nitride source-material baseplate (2), and III nitride single crystal (4) is grown o... | 05/19/2009 |
| 7326294 | Preparation of small crystals Small crystals are made by mixing a solution of a desired substance with an anti-solvent in a fluidic vortex mixer in which the residence time is less than 1s, for example 10 ms. The liquid within the fluidic vortex mixer (12) is subjected to high intensity u... | 02/05/2008 |
| 7277619 | Nano-imprinted photonic crystal waveguide This invention relates to a method for forming a nano-imprinted photonic crystal waveguide, comprising the steps of: preparing an optical film on a substrate; preparing a template having a plurality of protrusions of less than 500 nm in length such that the protrusi... | 10/02/2007 |
| 7163826 | Method of fabricating multi layer devices on buried oxide layer substrates A method for fabricating multi layer devices on a substrate with a buried oxide layer is disclosed. Multi layer microelectromechanical, microfluidic, and integrated circuit devices are fabricated on a substrate with layers of predetermined weak and strong bond regio... | 01/16/2007 |
| 7145219 | Vertical integrated circuits A method for fabricating a vertical integrated circuit is disclosed. Integrated circuits are fabricated on a substrate with layers of predetermined weak and strong bond regions where deconstructed layers of integrated circuits are fabricated at or on the weak bond r... | 12/05/2006 |
| 7097718 | Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects Epitaxial wafers comprising a single crystal silicon substrate comprising agglomerated vacancy defects and having an axially symmetric region in which silicon self-interstitials are the predominant intrinsic point defect and which is substantially free of agglomerat... | 08/29/2006 |
| 7094120 | Phosphor screen substrate, image display device using the same, and manufacturing methods thereof A phosphor screen substrate is provided in which withstand voltage properties are superior, white uniformity of display image is superior, and luminescence can be efficiently reflected toward the front side. A method for manufacturing such a phosphor screen substrat... | 08/22/2006 |
| 7081657 | MEMS and method of manufacturing MEMS The present invention relates to micro electro-mechanical systems (MEMS) and production methods thereof, and more particularly to vertically integrated MEMS systems. Manufacturing of MEMS and vertically integrated MEMS is facilitated by forming, preferably on a wafe... | 07/25/2006 |
| 7077905 | Apparatus for pulling a single crystal An apparatus for pulling the single crystal has a radiation shield. The apparatus can improve the ratio of single crystallization, even if the radiation shield is made of graphite base material and covered with silicon carbide. The apparatus can be manufactured by l... | 07/18/2006 |
| 7071133 | Colored glass compositions and-automotive vision panels with-reduced transmitted-color shift A neutral gray colored glass composition for automotive vision panels having reduced transmitted color shift characteristics is provided. The glass composition has a base portion including 65 to 75 weight percent SiO2, 10 to 20 weight percent Na2 | 07/04/2006 |
| 7062135 | Method for fabricating curved elements The present invention provides methods for forming convex and concave elements on the ends of supporting members. A convex element may be formed by forming a droplet on the end of the supporting member, then curing the droplet. The size of the droplet may be control... | 06/13/2006 |
| 7045878 | Selectively bonded thin film layer and substrate layer for processing of useful devices A layered structure generally includes a first layer suitable for having a useful element formed therein or thereon selectively attached or bonded to a second layer. A method to form a layered structure generally comprises selectively adhering a first substrate to a... | 05/16/2006 |
| 6979938 | Electronic device formed from a thin film with vertically oriented columns with an insulating filler material A thin film device comprises: a substrate and a thin film having a thickness formed on the substrate, wherein the thickness of the thin film is at least 1 micrometer, a crystal structure having crystals with a grain size formed within the thin film, wherein the grai... | 12/27/2005 |
| 6970154 | Fringe-field filter for addressable displays The display kit of the present invention comprises: an addressable display medium configured to exhibit a first aspect under the influence of an addressing vector field in a first direction at an addressing magnitude; and an addressor; where the addressor is configu... | 11/29/2005 |
| 6942351 | Forming a silver coating on a vitreous substrate A process for forming a silver coating on a surface of a vitreous substrate is described. The process comprises an activating step in which said surface is contacted with an activating solution, a sensitising step in which said surface is contacted with a sensitisin... | 09/13/2005 |
| 6913647 | Process for cooling a silicon ingot having a vacancy dominated region to produce defect free silicon A process for producing silicon which is substantially free of agglomerated intrinsic point defects in an ingot having a vacancy dominated region. An ingot is grown generally in accordance with the Czochralski method. While intrinsic point defects diffuse from or ar... | 07/05/2005 |
| 6869477 | Controlled neck growth process for single crystal silicon A process for preparing a single crystal silicon in accordance with the Czochralski method, is provided. More specifically, by quickly reducing the pull rate at least once during the growth of the neck portion of the single crystal ingot, in order to change the melt... | 03/22/2005 |
| 6866713 | Seed crystals for pulling single crystal silicon The present invention provides for a process for preparing a single crystal silicon ingot by the Czochralski method. The process comprises selecting a seed crystal for Czochralski growth wherein the seed crystal comprises vacancy dominated single crystal silicon. | 03/15/2005 |
| 6811607 | Method for forming aluminum oxide material used in optical data storage The present invention provides aluminum oxide crystalline materials including dopants and oxygen vacancy defects and methods of making such crystalline materials. The crystalline materials of the present invention have particular utility in optical data storage appl... | 11/02/2004 |
| 6749683 | Process for producing a silicon melt A process for controlling the amount of insoluble gas trapped by a silicon melt is disclosed. Polycrystalline silicon is charged to a crucible in a crystal pulling apparatus and the apparatus sealed and evacuated. After evacuation, the crystal pulling apparatus is b... | 06/15/2004 |
| 6695912 | Method for growing laser crystals A method for growing solid state laser crystal boules is disclosed that when made into laser rods do not need separate end caps attached to the laser rods. The crystal boule is grown as a single integral unit with three segments. Two segments, the end seg... | 02/24/2004 |
| 6663710 | Method for continuously pulling up crystal An apparatus and a method that permits a seed crystal to be directed to a precise location of a melt for growing a ribbon-shaped crystal, but after the crystal has commenced growing, the ribbon-shaped crystal is continuously pulled up so as to produce a l... | 12/16/2003 |
| 6652645 | Process for preparing a silicon melt A process for controlling the amount of insoluble gas trapped by a silicon melt is disclosed. After a crucible is charged with polycrystalline silicon, a gas comprising at least about 10% of a gas having a high solubility in silicon is used as the purging... | 11/25/2003 |
| 6565649 | Epitaxial wafer substantially free of grown-in defects The present invention is directed to an epitaxial wafer comprising a single crystal silicon substrate having an axially symmetric region in which silicon self-interstitials are the predominant intrinsic point defect and which is substantially free of aggl... | 05/20/2003 |
| 6417007 | Robotic harvesting of solids from fluids The present invention is directed to the method and apparatus for the robotic harvesting of solids from liquids as exemplified by harvesting protein crystals. Further, the present invention is directed to a fluid/solid management system in a chamber that ... | 07/09/2002 |
| 6409826 | Low defect density, self-interstitial dominated silicon The present invention relates a process for the preparation of single crystal silicon, which contains an axially symmetric region which is free of agglomerated intrinsic point defects. The process for growing the single crystal silicon including controlli... | 06/25/2002 |
| 6372040 | Single crystal growth apparatus and single crystal growth method In an arrangement to grip lower part of a portion with larger diameter of single crystal formed by CZ method, the present invention provides an apparatus and a method for growing and pulling up the single crystal without causing deformation or rupture and... | 04/16/2002 |
| 6350312 | Strontium doping of molten silicon for use in crystal growing process A process for preparing strontium doped molten silicon for use in a single silicon crystal growing process is disclosed. Polysilicon is doped strontium and melted in a silica crucible. During melting and throughout the crystal growing process the strontiu... | 02/26/2002 |
| 6328795 | Process for growth of defect free silicon crystals of arbitrarily large diameters A process for growing single crystal silicon ingots which are substantially free of agglomerated intrinsic point defects. An ingot is grown generally in accordance with the Czochralski method. No portion of the ingot cools to a temperature which is less t... | 12/11/2001 |
| 6315827 | Apparatus for producing single crystal There is described an apparatus for producing a single crystal ingot capable of stably manufacturing a single crystal ingot by means of the Czochralski method, without being affected by influence of variation in extension of wires or an offset in points c... | 11/13/2001 |
| 6287380 | Low defect density silicon The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects, and a process for the preparation thereof. The process comprises controlling... | 09/11/2001 |
| 6254672 | Low defect density self-interstitial dominated silicon The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects, and a process for the preparation thereof. The process for growing the singl... | 07/03/2001 |
| 6210477 | Methods for pulling a single crystal The present invention relates to methods for pulling a single crystal wherein the induction of dislocation can be inhibited and a single crystal can be held safely. An apparatus for pulling a single crystal having a straightening vane in the shape of an i... | 04/03/2001 |
| 6171393 | Seed crystal and method of manufacturing single crystal A seed crystal 1 for manufacturing a single crystal incorporating an unconformity portion B formed at a predetermined position apart from a leading end thereof and structured to conduct the heat of melt and interrupt propagation of dislocation caused from... | 01/09/2001 |
| 6162292 | Method of producing silicon monocrystal There is disclosed a method of producing a silicon monocrystal using a Czochralski method in which a sharp tip end of a seed crystal is brought into contact with silicon melt and is melted, and the seed crystal is then pulled, without performance of a nec... | 12/19/2000 |
| 6159282 | Method of pulling a single crystal A method of pulling a single crystal includes forming an enlarged portion 26b and a reduced portion 26c under a neck 26a, and fitting the reduced portion for pulling an upsized single crystal. The reduced portion is formed with angle θs so tha... | 12/12/2000 |
| 6159285 | Converting <100> and <111> ingots to <110> ingots A new ingot of a desired orientation formed from an original ingot of a different orientation by cutting the new ingot from within the original ingot. In one aspect, to form a ingot from a ingot, a {110} flat is formed on the ingot. The ... | 12/12/2000 |
| 6086670 | Silicon wafer and method for producing the same An n-type wafer is provided having a crystal axis in which the resistivity distribution in the surface of the wafer is uniform. The wafer is suitable for use in, e.g., a zener diode. A method is provided for growing a single crystal of n-type silico... | 07/11/2000 |
