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| Number | Title | Issue Date |
| 7632350 | Crystal grower with integrated Litz coil An apparatus and method of manufacturing a crystal grower is disclosed. The crystal grower includes a reservoir constructed to receive a crystal growing material therein. An induction heater having a coil of woven strands of wire is disposed proximate the reservoir ... | 12/15/2009 |
| 7326294 | Preparation of small crystals Small crystals are made by mixing a solution of a desired substance with an anti-solvent in a fluidic vortex mixer in which the residence time is less than 1s, for example 10 ms. The liquid within the fluidic vortex mixer (12) is subjected to high intensity u... | 02/05/2008 |
| 7291222 | Systems and methods for measuring and reducing dust in granular material The invention is directed to apparatus and methods for measuring and for reducing dust in granular polysilicon. In one aspect, a system includes a process vessel having a vacuum port for pulling dust from the polysilicon. Another system of the invention includes a b... | 11/06/2007 |
| 7277141 | Optical bodies containing cholesteric liquid crystal material and methods of manufacture An optical body includes a substrate and a cholesteric liquid crystal layer disposed on the substrate. The cholesteric liquid crystal layer has a non-uniform pitch along a thickness direction of the layer and comprises a crosslinked polymer material that substantial... | 10/02/2007 |
| 7250202 | Recording sheets for ink jet printing A recording sheet for ink jet printing comprising a support onto which is coated at least one ink receiving layer and includes a porous inorganic oxide and an aliphatic hydroxycarboxylic acid with at least 2 C atoms. ... | 07/31/2007 |
| 7101592 | Method and apparatus for curtain coating In a method and an apparatus for curtain coating of a moved substrate like a paper web substrate is moved below a liquid supply means providing a single or multilayer liquid coating in the form of a free-falling curtain impinging the substrate at a dynamic wetting l... | 09/05/2006 |
| 7067007 | Process and device for growing single crystals The process for growing single crystals, wherein crystal material is melted in a crucible and a crystal nucleus is immersed in the molten crystal material and slowly pulled out, wherein the crystal formed during the pulling is kept at a temperature close to melting ... | 06/27/2006 |
| 6917399 | Optical bodies containing cholesteric liquid crystal material and methods of manufacture An optical body includes a substrate and a cholesteric liquid crystal layer disposed on the substrate. The cholesteric liquid crystal layer has a non-uniform pitch along a thickness direction of the layer and comprises a crosslinked polymer material that substantial... | 07/12/2005 |
| 6908510 | Material purification For producing ultra pure materials a first station has a porous gas distributor. A material supply supplies material to the porous gas distributor. A gas source supplies gas to the distributor and through the distributor to the material in contact with the distribut... | 06/21/2005 |
| 6899758 | Method and apparatus for growing single crystal The present invention provides a method and apparatus for growing a single crystal by the Czochralski method, wherein a single crystal is grown with forced cooling of neighborhood of a crystal growth interface by disposing a cooling cylinder formed of copper or a me... | 05/31/2005 |
| 6843848 | Semiconductor wafer made from silicon and method for producing the semiconductor wafer A semiconductor wafer made from silicon which is doped with hydrogen. The hydrogen concentration is less than 5*1016 atcm−3 and greater than 1*1012 atcm−3. A method for producing a semiconductor wafer from silicon incl... | 01/18/2005 |
| 6770132 | Method for pressurized annealing of lithium niobate and resulting lithium niobate structures In one aspect of the invention, a method for pressurized annealing of lithium niobate or lithium tantalate structures, such as optical modulators and optical wave guides, comprises pressurizing an oxygen atmosphere containing a lithium niobate or lithium tantalate s... | 08/03/2004 |
| 6423137 | Single crystal material supplying apparatus and single crystal material supplying method The present invention aims to prevent solidification of a melt in a feeding pipe without providing heating means such as heater or heat keeping means such as heat insulating material on outer periphery of the feeding pipe when the melt is supplied from an... | 07/23/2002 |
| 6402834 | Apparatus and method for manufacturing monocrystals In a monocrystal producing device using a pulling-down method, a raw material melt 5m is continuously supplied into a crucible 2 to grow a crystal 18 by supplying a powdery raw material 5p onto a premelt plate 3 inside an electric furnace 10 with a powder... | 06/11/2002 |
| 6387177 | Method for manufacturing a segmented crystal The present invention relates to a method for manufacturing a crystal with at least two segments, wherein adjacent segments differ by at least one characteristic. The different segments can, for example, be of different materials, or have a different dopi... | 05/14/2002 |
| 6261364 | Semiconductor single-crystal growth system A system for growing high-quality, low-carbon-concentration single crystals which have an excellent gas-flow guiding function near the melt, containing 1) an inverted conical, flow-guide cover placed above and coaxially with a double-walled crucible, with... | 07/17/2001 |
| 6153008 | Device and method for pulling a single crystal Device for pulling a silicon single crystal 1 includes an element 5 which annularly surrounds the single crystal growing at a crystallization boundary; and the element has a face 6 directed at the single crystal. The element surrounds the single crystal s... | 11/28/2000 |
| 5993540 | Continuous crystal plate growth process and apparatus Reactive gas is released through a crystal source material or melt to react with impurities and carry the impurities away as gaseous products or as precipitates or in light or heavy form. The gaseous products are removed by vacuum and the heavy products f... | 11/30/1999 |
| 5911826 | Method for pulling crystal An electrode is disposed at the lower end of a radiation screen. The electrode is made of single-crystal silicon. A circuit including a power source is established by contacting the electrode and the seed crystal to a silicon melt.... | 06/15/1999 |
| 5865887 | Method for improving mechanical strength of the neck section of czochralski silicon crystal An apparatus and method for growing large diameter silicon crystals using the Czochralski (Cz) method, wherein the neck section of the crystal is significantly strengthened to eliminate the risk of breakage in the neck section, by providing a heat shield ... | 02/02/1999 |
| 5858085 | Method for growing a semiconductor single-crystal A system for growing high-quality, low-carbon-concentration single crystals which have an excellent gas-flow guiding function near the melt, containing 1) an inverted conical, flow-guide cover placed above and coaxially with a double-walled crucible, with... | 01/12/1999 |
| 5824152 | Semiconductor single-crystal pulling apparatus In the manufacture of a single crystal using a semiconductor single-crystal pulling apparatus equipped with a radiation screen, the time of passage of the single crystal through the high-temperature region of 1050° C. and above is made to be long and the... | 10/20/1998 |
| 5759261 | Method for pulling a monocrystal A method and an apparatus for pulling a silicon monocrystal from a melt iudes the pulling of a conical portion in each case at the beginning and at the end of the monocrystal and the pulling of a cylindrical portion between the conical portions. In this ... | 06/02/1998 |
| 5690733 | Method for recharging of silicon granules in a Czochralski single crystal growing operation A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal gro... | 11/25/1997 |
| 5683505 | Process for producing single crystals A process for producing single crystals with little OSF generation and excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the silicon single crystal in the direction of pulling. The process is carried out with an ap... | 11/04/1997 |
| 5681758 | Method for fabricating semiconductor single crystal A method of supplying raw material for fabricating semiconductor single crystal according to the continuously charged method provides an inventive method to overcome the problems of the raw material being charged either insufficiently or excessively, and ... | 10/28/1997 |
| 5629216 | Method for producing semiconductor wafers with low light scattering anomalies A monitor wafer used to determine the cleanliness of a wafer fabrication environment requires a surface having a minimum of light scattering anomalies so that contamination deposited by the environment is not confused with light scattering anomalies initi... | 05/13/1997 |
| 5607506 | Growing crystalline sapphire fibers by laser heated pedestal techiques An improved system and process for growing crystal fibers comprising a means for creating a laser beam having a substantially constant intensity profile through its cross sectional area, means for directing the laser beam at a portion of solid feed materi... | 03/04/1997 |
| 5578123 | Apparatus and method for preparing a single crystal Apparatus for preparing a single crystal made of silicon is according to Czochralski method, which includes a tubular to the conical body which shields the growing single crystal and divides the receiver chamber above the melt into an inner portion and ... | 11/26/1996 |
| 5571320 | Spiral heater for use in czochralski crystal pullers The invention defines an apparatus for controlling oxygen content in Czochralski silicon crystal pullers in which silicon is melted in a quartz crucible. The apparatus includes a susceptor 10, a quartz crucible 12 in said susceptor, a cable 16 for lowerin... | 11/05/1996 |
| 5268063 | Method of manufacturing single-crystal silicon A single crystal silicon is prepared by constructing a silicon melt reservoir of an induction coil coated on its internal surface with a layer of a high melting point insulating material and placing silicon raw material in the reservoir, heating the silic... | 12/07/1993 |
| 5223077 | Method of manufacturing single-crystal silicon A single crystal silicon is prepared by providing a silicon melt reservoir formed of an induction coil coated on its internal surfaces with a high melting insulating material which is subjected to an electromagnetic field which heats silicon placed in sai... | 06/29/1993 |
| 5089238 | Method of forming a temperature pattern of heater and silicon single crystal growth control apparatus using the temperature pattern Used in an apparatus for pulling a Si single crystal 36 up from Si molten liquid 35 by using the Czochralski method. In order to produce a Si single crystal having a desired quality, the diameter of the Si single crystal is controlled by controlling the p... | 02/18/1992 |
| 5087321 | Manufacturing method and equipment of single silicon crystal Method for manufacturing a large columner silicon single crystal having a diameter of 12 cm-30 cm by pulling up a crystal, growing, and rotating it in one direction, from molten silicon material in a quartz crucible rotating in the other direction. The in... | 02/11/1992 |
| 5074953 | Method for monocrystalline growth of dissociative compound semiconductors The present invention relates to a method and apparatus for mono-crystalline growth of a dissociative compound semiconductor. The method, which is based on the Czochralski method, includes the following steps. First, a first volatile component material an... | 12/24/1991 |
| 5069742 | Method and apparatus for crystal ribbon growth Crystals are grown in ribbon shapes by an apparatus for supporting a film of source material, capacitive electrodes contacting the film and heat pipes in thermal contact with the electrodes for first heating the material through the electrodes to near its... | 12/03/1991 |
| 5069741 | Method of manufacturing quartz double crucible assembly A quartz double crucible assembly utilized for producing silicon crystalline rods is manufactured as follows. First, outer and inner quartz crucibles are prepared by means of arc fusion method. Then, the outer and inner crucibles are received in a vessel ... | 12/03/1991 |
| 5055157 | Method of crystal ribbon growth Crystals are grown in ribbon shapes by an apparatus for supporting a film of source material, capacitive electrodes contacting the film and heat pipes in thermal contact with the electrodes for first heating the material through the electrodes to near its... | 10/08/1991 |
| 4971652 | Method and apparatus for crystal growth control A method and apparatus for crystal growth control in a Czochralski crystal pulling process are provided wherein a plurality of thermocouples and individually controllable heating elements are embedded in an upper control section of a raised platform in a ... | 11/20/1990 |
| 4874458 | Single crystal growing method having improved melt control In a single crystal growing technique (crystal pulling) a method for minimizing impurity contamination and preventing heat convection currents from affecting the solid-melt crystal growing interface which uses a floating baffle plate in the interior of th... | 10/17/1989 |
