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Class 117/33 - Replenishing of precursor during growth (e.g., continuous method, zone pulling)


Subclass of Class 117 - Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
Definition: Subject matter in which precursor* is replenished
No. of patents: 96
Last issue date: 04/06/2010


1      
NumberTitleIssue Date
7691199Melter assembly and method for charging a crystal forming apparatus with molten source material
A melter assembly supplies a charge of molten source material to a crystal forming apparatus for use in forming crystalline bodies. The melter assembly comprises a housing and a crucible located in the housing. A heater is disposed relative to the crucible for melti...
04/06/2010
7655089Process and apparatus for producing a single crystal of semiconductor material
A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the...
02/02/2010
7465351Melter assembly and method for charging a crystal forming apparatus with molten source material
A method of servicing multiple crystal forming apparatus with a single melter assembly is provided. The method includes the steps of positioning the melter assembly relative to a first crystal forming apparatus for delivering molten silicon to a crucible of the firs...
12/16/2008
7361219Method for producing silicon wafer and silicon wafer
The present invention are a method for producing a silicon wafer having a crystal orientation from a silicon single crystal ingot grown by a Floating Zone method (FZ method), wherein, at least, an FZ silicon single crystal ingot is grown by being made to be di...
04/22/2008
7311772Apparatus and method for supplying raw material in Czochralski method
Means for supplying raw material in additional charging or recharging of solid granular raw material into molten material in the crucible, comprises a raw material supply tube to be filled with said material, a metallic support member which runs through the inside o...
12/25/2007
7291222Systems and methods for measuring and reducing dust in granular material
The invention is directed to apparatus and methods for measuring and for reducing dust in granular polysilicon. In one aspect, a system includes a process vessel having a vacuum port for pulling dust from the polysilicon. Another system of the invention includes a b...
11/06/2007
7252880Tape and wrapping materials with edge-finding feature
A flexible material such as a transparent tape includes a material which enhances the visibility of a newly formed edge. The material can include a fluorescent dye disposed in the tape, or can be a material which reacts with oxygen, moisture or some other component ...
08/07/2007
7220308Manufacturing method of high resistivity silicon single crystal
To suppress a fluctuation in resistivity around a target value to thereby stably manufacture high resistivity silicon single crystals having almost the same resistivity values in a manufacturing method wherein a silicon raw material is molten to manufacture a high r...
05/22/2007
7203985Shoe bottom having interspersed materials
A shoe (and fabrication techniques therefor) on which is provided a bottom portion that includes a sole portion and a heel portion and that has a bottom surface and an upper portion extending upwardly from the bottom portion. The bottom surface of the bottom portion...
04/17/2007
7135069Coating silicon pellets with dopant for addition of dopant in crystal growth
An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in an aqueous solution comprising a boric acid and polyvinyl alcohol, and (2) heating the solution so as to evaporate water and form a polymerized polyvinyl alcohol c...
11/14/2006
7132091Single crystal silicon ingot having a high arsenic concentration
A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.003 Ω·cm. ...
11/07/2006
7056558Fabric shoe outsole manufacturing methods by electrostatic flocking
A shoe having a fabric outsole and method for manufacturing are disclosed. In described embodiments, a shoe outsole with a bottom surface wherein an adhesive is applied to at least a portion of the bottom surface of the shoe outsole and a plurality of fibers are emb...
06/06/2006
7022164Filters employing porous strongly acidic polymers
A clean, high efficiency, low pressure drop, adsorptive filter material that is porous and includes an acidic functional group. The filter can include, for example, a non-woven filter composite has a porous sulfonated divinyl benzene styrene copolymer beads having s...
04/04/2006
7001456Apparatus and method for supplying Crystalline materials in czochralski method
In supplying crystalline materials in the Czochralski method, it is made use of an apparatus equipped with an inner vessel having an opening portion at the lower part or bottom thereof, which is to be charged with a granular solid material, an outer vessel containin...
02/21/2006
6970154Fringe-field filter for addressable displays
The display kit of the present invention comprises: an addressable display medium configured to exhibit a first aspect under the influence of an addressing vector field in a first direction at an addressing magnitude; and an addressor; where the addressor is configu...
11/29/2005
6908509CZ raw material supply method
Additional charge of a solid raw material 13 in the shapes of granules/lumps, low in raw material cost, and with no risk of cracking, is performed into a molten raw material 14 in a crucible in a static manner without solidifying a surface of the molte...
06/21/2005
6896732Source material feeder apparatus for industrial crystal growth systems
A raw material feeder apparatus for industrial crystal growth systems includes a hopper disposed within a vacuum chamber and adapted to hold a quantity of raw material therein. A slide is disposed adjacent to an opening of the hopper and configured to receive the ra...
05/24/2005
6840998Silicon single crystal produced by crucible-free float zone pulling
A silicon single crystal is produced by crucible-free float zone pulling, has a diameter of at least 200 mm over a length of at least 200 mm and is free of dislocations in the region of this length. A silicon wafer is separated from the silicon single crystal by a p...
01/11/2005
6805746Method for supplying CZ material
Granules/lumps poly-silicon raw material, low in raw material cost and free of the hazard of crack is additionally charged into a crucible in a safe and steady manner. In a single crystal growth according to the CZ method, poly-silicon raw material ins initially cha...
10/19/2004
6740158Process for coating silicon shot with dopant for addition of dopant in crystal growth
An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in a boron dopant spin-on solution comprising a borosilicate, a polymer precursor, and a volatile solvent, and (2) removing the solvent so as to leave a polymeric coa...
05/25/2004
6702892Production device for high-quality silicon single crystals
An apparatus is provided which is to be used in producing single crystals for silicon wafers useful as semiconductor materials and which can stably produce large-diameter, long-length and high-quality single crystals from which wafers limited in the numbe...
03/09/2004
6626993Method for stabilizing dendritic web crystal growth
A process for dendritic web growth is described. The process includes providing a melt, growing a dendritic web crystal from the melt, replenishing the melt during the step of growing the dendritic web crystal, and applying a magnetic field to the melt du...
09/30/2003
6423137Single crystal material supplying apparatus and single crystal material supplying method
The present invention aims to prevent solidification of a melt in a feeding pipe without providing heating means such as heater or heat keeping means such as heat insulating material on outer periphery of the feeding pipe when the melt is supplied from an...
07/23/2002
6402834Apparatus and method for manufacturing monocrystals
In a monocrystal producing device using a pulling-down method, a raw material melt 5m is continuously supplied into a crucible 2 to grow a crystal 18 by supplying a powdery raw material 5p onto a premelt plate 3 inside an electric furnace 10 with a powder...
06/11/2002
6402839System for stabilizing dendritic web crystal growth
A process for dendritic web growth is described. The process includes providing a melt, growing a dendritic web crystal from the melt, replenishing the melt during the step of growing the dendritic web crystal, and applying a magnetic field to the melt du...
06/11/2002
6254674Method of controllably delivering dopant by limiting the release rate of dopant from a submerged vessel
A time-released dopant delivery system and method are provided in a Czochralski-type crystal-growing furnace to enable continuous doping of the melt over time. The dopant delivery system and method adjusts dopant levels within the melt as a function of ti...
07/03/2001
6110272Method for producing silicon single crystal
A method of loading a crucible, comprises loading at least one polycrystalline silicon rod into the crucible. Lump and/or granular polycrystalline silicon may also be loaded into the crucible. Especially when loaded into the crucible in a close-packed pyr...
08/29/2000
6106617Apparatus for feeding raw material into a quartz crucible
A method of an apparatus for automatically and rapidly feeding raw material into a quartz crucible in manufacture of single-crystal silicon by CZ method. After a draining hose 203 is disposed in a quartz crucible 201, pure water is supplied from a water s...
08/22/2000
6027563Method and apparatus for the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber
For the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber (9, 41) with a cooling body (11), which can be lowered relative to the chamber, the flat bottom surface of a seed body (25) of solid silicon is laid...
02/22/2000
6019838Crystal growing apparatus with melt-doping facility
A crystal growing apparatus is able to provide dopant to a melt in the apparatus. A hopper is carrying dopant is integrated into a pull shaft of the apparatus so that dopant can be added to the melt without providing additional orifices in the apparatus o...
02/01/2000
6007621Apparatus for feeding raw material into a quartz crucible and method of feeding the same
The invention is to provide a method for automatically and rapidly feeding raw material into a quartz crucible in manufacture of single-crystal silicon by CZ method. For example, after a draining hose 203 is disposed in a quartz crucible 201, pure water i...
12/28/1999
5919304Method and apparatus for producing oxide series single crystals
When producing an oxide-series single crystal by continuously pulling downwardly by μ pulling down method, the composition of the single crystal can properly and quickly controlled to continuously produce the single crystal of a constant composition by c...
07/06/1999
5919303Process for preparing a silicon melt from a polysilicon charge
A process for preparing a silicon melt from a polysilicon charge, for use in the production of single crystal silicon ingots by the Czochralski method, in a crucible which has a bottom, a sidewall formation, a centerline which is substantially parallel to...
07/06/1999
5902395Method for feeding granular silicon material, feed pipe used in the method, and method of manufacturing a silicon monocrystal
In a pulling apparatus operated according to the multi-pulling method or CCZ method, granular silicon material is first fed to a feed pipe from a feeder so as to form stagnation of the granular silicon material in the feed pipe. The feeding of the granula...
05/11/1999
5900055Method of manufacturing silicon monocrystal by continuously charged Czochralski method
A silicon monocrystal is manufactured according to the continuously charged Czochralski method in which a double crucible is used which includes an outer crucible and an inner crucible which communicate with each other through pores. A dopant is charged t...
05/04/1999
5888293Material supplied for fabricating single-crystal semiconductor
A low-cost and high productivity charging material is provided for use in the recharge or additional charge fabrication of single-crystal semiconductor by means of the CZ method. Common polysilicon rods utilized in recharge or additional charge fabricatio...
03/30/1999
5876496Method for feeding a granular raw material and feeding apparatus
A feeding reservoir 11 for intermittently or continuously feeding granular raw material into a pulling apparatus 1, a chamber 13 connected to the feeding reservoir 11 through a gate valve 12, a granular raw material supply section 15 by which the granular...
03/02/1999
5840115Single crystal growth method
A method of growing a single crystal of semiconductor using a CZ growth technique, having a step (0
11/24/1998
5840116Method of growing crystals
A process of growing crystals in which the uniformity of the oxygen concentration is desirable. In the process, the upper part of the material in the crucible is heated to form a molten layer, and a solid layer is formed at its lower part, then a seed cry...
11/24/1998
5820649Method of and apparatus for continuously producing a solid material
A liquid material such as molten silicon is stored in a crucible. A liquid material, which is identical to and held in the same conditions as the liquid material in the crucible, is continuously supplied from an auxiliary crucible to the crucible to keep ...
10/13/1998
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