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| Number | Title | Issue Date |
| 8016942 | Process for producing metal fluoride single crystal A metal fluoride single crystal pulling apparatus that upward pulling initiation through termination, in the state of shallow melt capable of highly effective inhibition of scatterer formation, can perform stable growth of single crystal and can suppress any mixing ... | 09/13/2011 |
| 7799130 | Silicon single crystal ingot and wafer, growing apparatus and method thereof A silicon single crystal ingot growing apparatus for growing a silicon single crystal ingot based on a Czochralski method The silicon single crystal ingot growing apparatus includes a chamber; a crucible provided in the chamber, and for containing a silicon melt; a ... | 09/21/2010 |
| 7799131 | Method for the growth of semiconductor ribbons The present invention provides a method for the continuous production of semiconductor ribbons by growth from a linear molten zone. The creation of the molten zone is achieved by application of an electric current, direct or alternating, parallel to the surface of t... | 09/21/2010 |
| 7628854 | Process for producing silicon single crystal A process for producing a silicon single crystal includes the steps of bringing a seed crystal into contact with a silicon melt, gradually pulling the seed crystal from the melt so as to form a neck having a tapered portion and a constant diameter portion, then pull... | 12/08/2009 |
| 7559988 | Method and apparatus for growing high quality silicon single crystal, silicon single crystal ingot grown thereby and wafer produced from the same single crystal ingot The invention relates to a technique for producing a high quality Si single crystal ingot with a high productivity by the Czochralski method. The technique of the invention can control the magnetic field strength of an oxygen dissolution region different from that o... | 07/14/2009 |
| 7416603 | High quality single crystal and method of growing the same Disclosed is a method of growing a single crystal from a melt contained in a crucible. The method includes the step of making the temperature of a melt increase gradually to a maximum point and then decrease gradually along the axis parallel to the lengthwise direct... | 08/26/2008 |
| 7396405 | Single crystal, single crystal wafer, epitaxial wafer, and method of growing single crystal There is disclosed a single crystal obtained by a single crystal pulling method, wherein an interval of striations incorporated into the single crystal due to temperature fluctuation of crystal melt at the time of crystal growth is controlled, and a method of growin... | 07/08/2008 |
| 7396406 | Single crystal semiconductor manufacturing apparatus and method A single crystal semiconductor manufacturing method for realizing a dislocation-free single crystal while not varying or hardly varying electric power supplied to a heater when and after a seed crystal comes into contact with a melt. The allowable temperature differ... | 07/08/2008 |
| 7374614 | Method for manufacturing single crystal semiconductor The method for manufacturing a single crystal semiconductor achieves an object to reduce the impurity concentration nonuniformity within a semiconductor wafer plane and thus to improve the wafer planarity by introducing an impurity into the single crystal semiconduc... | 05/20/2008 |
| 7371283 | Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby Disclosed is a metod of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt... | 05/13/2008 |
| 7358159 | Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by u... | 04/15/2008 |
| 7335256 | Silicon single crystal, and process for producing it A silicon single crystal which, over an ingot length of over 10 percent of the total ingot length, has a uniform defect picture and narrow radial dopant and oxygen variations. The process in accordance with the Czochralski method involves bringing about a temperatur... | 02/26/2008 |
| 7329317 | Method for producing silicon wafer The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 an... | 02/12/2008 |
| 7314766 | Semiconductor wafer treatment method, semiconductor wafer inspection method, semiconductor device development method and semiconductor wafer treatment apparatus A treatment method of a semiconductor wafer includes treating the semiconductor wafer in a first solution having at least one kind of an oxidative acid and an oxidizing agent and treating the semiconductor wafer in a second solution having at least one of HF and NH | 01/01/2008 |
| 7309373 | Method of making a ceramic body of densified tungsten carbide A method of making tungsten carbide and a method of making a densified tungsten carbide-containing ceramic body with a transverse rupture strength greater than 300,000 psi are disclosed. ... | 12/18/2007 |
| 7300518 | Apparatus and method for producing single crystal, and silicon single crystal The invention provides an apparatus for producing a single crystal, and a method for producing a silicon single crystal using the same. An apparatus for producing a single crystal includes a heating device which heats polycrystalline silicon raw material held in a c... | 11/27/2007 |
| 7291221 | Electromagnetic pumping of liquid silicon in a crystal growing process A method and system for use in combination with a crystal growing apparatus for growing a monocrystalline ingot according to a Czochralski process. The crystal growing apparatus has a heated crucible including a semiconductor melt from which the ingot is pulled. The... | 11/06/2007 |
| 7282095 | Silicon single crystal pulling method [Problem] A silicon single crystal ingot in which point defect agglomerates do not exist over a substantially entire length thereof is manufactured without reducing a pure margin. [Solving Means] A heat shielding member 36 comprises a bulge portion ... | 10/16/2007 |
| 7261773 | Melting crucible The invention relates to producing a melt that is as homogeneous as possible, to which fresh material in the form of granulate is continuously supplied. Since the granulate is cooler than the melt, heat sinks form that are especially pronounced when the granulate fo... | 08/28/2007 |
| 7255740 | Method of growing hexagonal single crystals and use of same as substrates for semiconductor elements A method is described for making low-stress single crystals with a hexagonal crystal structure, which has a crystallographic c-axis perpendicular to a [0001] surface. A single crystal maintained at a temperature under the melting point of the crystal raw material is... | 08/14/2007 |
| 7235133 | Method for growing single crystal of semiconductor By utilizing a crystal pulling apparatus for producing a single crystal according to the Czochralski method comprising at least a crucible to be charged with a raw material, a heater surrounding the crucible, and subsidiary heating means provided below the crucible,... | 06/26/2007 |
| 7235132 | Durable CFC support crucible for high-temperature processes in the pulling of semiconductor single crystals In order to pull semiconductor single crystals by the Czochralski method, quartz glass crucibles are used which require support crucibles having high temperature capabilities. Such support crucibles may be made of various materials, in which case graphite materials,... | 06/26/2007 |
| 7226507 | Method for producing single crystal and single crystal The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed ... | 06/05/2007 |
| 7223304 | Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field Methods and system for controlling crystal growth in a Czochralski crystal growing apparatus. A magnetic field is applied within the crystal growing apparatus and varied to control a shape of the melt-solid interface where the ingot is being pulled from the melt. Th... | 05/29/2007 |
| 7220308 | Manufacturing method of high resistivity silicon single crystal To suppress a fluctuation in resistivity around a target value to thereby stably manufacture high resistivity silicon single crystals having almost the same resistivity values in a manufacturing method wherein a silicon raw material is molten to manufacture a high r... | 05/22/2007 |
| 7208043 | Silicon semiconductor substrate and preparation thereof A silicon semiconductor substrate has a structure possessing oxygen precipitate defects fated to form gettering sites in a high density directly below the defect-free region of void type crystals. The silicon semiconductor substrate is formed by heat-treating a sili... | 04/24/2007 |
| 7179331 | Crystal growing equipment The invention presented here relates to a crystal growing equipment. It is equipped in general with a resistance heater for heating a melt (13) as well as with field coils, which generate alternating magnetic field in a crucible, with which flows can be induc... | 02/20/2007 |
| 7156916 | Monolithic integrated crystal-structure-processed mechanical, and combined mechanical and electrical devices, and methods and systems for making Monolithic integrated crystalline-structure-processed arrays of mechanical, and combined mechanical and electrical devices, and related systems and processing methods. ... | 01/02/2007 |
| 7077905 | Apparatus for pulling a single crystal An apparatus for pulling the single crystal has a radiation shield. The apparatus can improve the ratio of single crystallization, even if the radiation shield is made of graphite base material and covered with silicon carbide. The apparatus can be manufactured by l... | 07/18/2006 |
| 7060133 | Single crystal pulling apparatus for a metal fluoride A single crystal pulling apparatus for a metal fluoride comprising a crucible provided in a chamber for filling with a molten solution of a single crystal material, a melting heater provided to surround the crucible, a vertically movable single crystal pulling bar f... | 06/13/2006 |
| 7040804 | Method for measuring diffusion coefficient in conductive melts, and apparatus for measuring the same Two conductive solid materials with their respective different compositions are joined in parallel with a gravity direction thereof, and then, heated and melted under static magnetic field orthogonal to the gravity direction to form two conductive melts with their r... | 05/09/2006 |
| 7016128 | Method of making a high reflectivity micro mirror and a micro mirror A method of making a high reflectivity micro mirror. A first step involves providing a monolithic bulk crystal silicon having an anisotropic body with a crystalline plane. A second step involves applying chemical agents to selectively remove a portion of the body ov... | 03/21/2006 |
| 6984264 | Single crystal pulling device and method and superconducting magnet A single crystal pulling device is composed of a cylindrical pulling furnace, a crucible disposed in the pulling furnace in which a single crystal material for a semiconductor is poured, a cylindrical vacuum vessel coaxially disposed around the pulling furnace, and ... | 01/10/2006 |
| 6960486 | Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser... | 11/01/2005 |
| 6941774 | Optical fiber preform-heating furnace The present invention provides an optical fiber preform-heating furnace that is simple in its structure and excellent in uniformity of the temperature distribution in a circumferential direction of an optical fiber preform. The optical fiber preform-heating furnace ... | 09/13/2005 |
| 6916371 | Apparatus for growing stoichiometric lithium niobate and lithium tantalate single crystals and method of growing the same A method for growing stoichiometric lithium niobate and lithium tantalate single crystals is provided. A crystal growing apparatus that includes a long crucible with a separation member therein is used. A solid feed material is quenched from a molten state, solidifi... | 07/12/2005 |
| 6908509 | CZ raw material supply method Additional charge of a solid raw material 13 in the shapes of granules/lumps, low in raw material cost, and with no risk of cracking, is performed into a molten raw material 14 in a crucible in a static manner without solidifying a surface of the molte... | 06/21/2005 |
| 6893499 | Silicon single crystal wafer and method for manufacturing the same According to the present invention, there is disclosed a silicon single crystal wafer grown according to the CZ method which is a wafer having a diameter of 200 mm or more produced from a single crystal grown at a growth rate of 0.5 mm/min or more without doping exc... | 05/17/2005 |
| 6843849 | Method and apparatus for growing high quality single crystal In a method for growing a single crystal by bringing a seed crystal (4) into contact with a melt (2) of raw materials melted under heating in a crucible (1) a blade member (5) or a baffle member in disposed in the raw material melt (2 | 01/18/2005 |
| 6805742 | Silicon semiconductor substrate and process for producing the same A semiconductor substrate after heat-treatment in a non-oxidising atmosphere has the characteristics that the depth of the denuded zone may be greater than 12 μm or the defect-free depth of the void type defect is greater than 12 μm and the substrate has a locally... | 10/19/2004 |
