Bizarre Patents
Crispy Chip Sandwich and Process of Producing a Sandwich Product
A food product comprising a multilayer cookie or snack having outer layers formed from a crispy type edible food product such as a potato chip or corn chip, etc. with an intermediate marshmallow layer being in contact with the inner surface of each crispy chip and one or more filler substances.
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| Number | Title | Issue Date |
| 7887631 | System and high pressure, high temperature apparatus for producing synthetic diamonds An apparatus for growing a synthetic diamond comprises a growth chamber, at least one manifold allowing access to the growth chamber, and a plurality of safety clamps positioned on opposite sides of the growth chamber; wherein the growth chamber and the plurality of... | 02/15/2011 |
| 7828893 | Silicon wafer and process for the heat treatment of a silicon wafer A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 | 11/09/2010 |
| 7604696 | Method of making a solar grade silicon wafer A method of making a solar grade silicon wafer is disclosed. In at least some embodiments of this invention, the method includes the follow steps: providing a slurry including a liquid that essentially prevents the oxidation of silicon powder and a silicon powder th... | 10/20/2009 |
| 7594965 | Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device The inhomogeneous energy distribution at the beam spot on the irradiated surface is caused by a structural problem and processing accuracy of the cylindrical lens array forming an optical system. According to the present invention, in the optical system for f... | 09/29/2009 |
| 7591894 | LuAP scintillator An LuAP scintillation detector and a method for improving the light output and uniformity of an LuAP scintillator crystal is provided, wherein the method includes disposing the scintillator crystal in a predetermined environment at a threshold temperature to generat... | 09/22/2009 |
| 7531036 | Single crystal heat treatment method The present invention provides a single crystal heat treatment method, having a step of heating a single crystal of a cerium-doped silicate compound represented by any of general formulas (1) to (4) below in an oxygen-containing atmosphere Y2−(x+y) | 05/12/2009 |
| 7524370 | Nanostructure and manufacturing method for same The invention relates to nanostructure and its manufacturing method. In the manufacturing method of a nanostructure, first anisotropic crystalline particles, connectors having an end to be connected to a specific crystal face of each of said crystalline particles, a... | 04/28/2009 |
| 7507288 | Highly anisotropic ceramic thermal barrier coating materials and related composites High temperature composites and thermal barrier coatings, and related methods, using anisotropic ceramic materials, such materials as can be modified to reduce substrate thermal mismatch. ... | 03/24/2009 |
| 7488384 | Direct pyrolysis route to GaN quantum dots Colloidal nanocrystals or “quantum dots” of GaN are directly produced by heating amidogallium dimer, i.e., (Ga2[N(CH3)2]6), in the presence of a functional amine. The GaN quantum dots obtained, which comprise isolated ... | 02/10/2009 |
| 7442250 | Lithium tantalate substrate and method for producing same A lithium tantalate substrate obtained by working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment carried out at a temperature kept ... | 10/28/2008 |
| 7438762 | Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of t... | 10/21/2008 |
| 7431764 | Method for pulling up single crystal The axial temperature gradient G at the vicinity of the solid-liquid interface 24 in an ingot is calculated in consideration of the heating value of a heater 18, the dimensions and physical property values of furnace inside components and the convectio... | 10/07/2008 |
| 7429296 | Method for manufacturing photoconductive layer constituting radiation imaging panel A photoconductive layer formed of a Bi12MO20 sintered body is manufactured without being fused with a setter. An oxide material in which a content of silicon oxide is 1 wt %, and more preferably, 0.3 wt % or less, is used as a setter which moun... | 09/30/2008 |
| 7419547 | Method for marking a crystalline material using cathodoluminescence In a first exemplary embodiment of the present invention, a method is provided for marking a sample of a doped crystalline material. According to a feature of the present invention, the method comprises the steps of causing a controlled alteration to the crystalline... | 09/02/2008 |
| 7396404 | Methods for forming alkali halide ingots into rectangular plates The present disclosure provides methods for forging cylindrical alkali halide melt-grown single-crystal-type ingots into rectangular blocks. The resulting rectangular blocks are devoid of peripheral cracks and fissures, and possess uniform properties and reduced lev... | 07/08/2008 |
| 7393409 | Method for making large-volume CaFsingle cystals with reduced scattering and improved laser stability, the crystals made by the method and uses thereof The method provides CaF2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2 starting material is heat-treated for at... | 07/01/2008 |
| 7390359 | Nitride semiconductor wafer A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconducto... | 06/24/2008 |
| 7381397 | Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals Methods and apparatus for preconditioning a lithium niobate or lithium tantalate crystal. At least a portion of a surface of the crystal is covered with a condensed material including one or more active chemicals. The crystal is heated in a non-oxidizing environment... | 06/03/2008 |
| 7374613 | Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparation Disclosed is a ceramic or metal single-crystal material having high-density dislocations arranged one-dimensionally on respective straight lines. The single-crystal material is produced by compressing a ceramic or metal single-crystal blank at a high temperature fro... | 05/20/2008 |
| 7374955 | Method of manufacturing silicon wafer The present invention provides a method of manufacturing a silicon wafer where a defect does not exist at a wafer surface layer part on which a device is formed, without affecting productivity and production costs of the wafer. An ingot of a silicon single cr... | 05/20/2008 |
| 7374612 | Method of producing single-polarized lithium tantalate crystal and single-polarized lithium tantalate crystal A method of producing a lithium-tantalate crystal comprising, at least subjecting a single-polarized lithium-tantalate crystal wherein an optical absorption coefficient at a wave number of 3480 cm−1 is 0.3 cm−1 or less to a heat treatment u... | 05/20/2008 |
| 7371619 | Semiconductor device and method of manufacturing the same In order to obtain a thin-film transistor having high characteristics using a metal element for accelerating the crystallization of silicon, a nickel element is selectively added to the surface of an amorphous silicon film (103) in regions (101) and ( | 05/13/2008 |
| 7364673 | Widely wavelength tuneable polychrome colloidal photonic crystal device The present invention discloses a widely wavelength tunable polychrome colloidal photonic crystal device whose optical Bragg diffraction stop bands and higher energy bands wavelength, width and intensity can be tuned in a continuous and fine, rapid and reversible, r... | 04/29/2008 |
| 7364715 | As-grown single crystal of alkaline earth metal fluoride A single crystal of alkaline earth metal fluoride is produced by a single crystal pulling method, has a straight barrel part diameter of not less than 17 cm, preferably has a straight barrel part length of not less than 5 cm, and has a light transmittance, as measur... | 04/29/2008 |
| 7361217 | Method for crystallising a melamine melt Method for crystallizing a melamine melt to form melamine particles with a D90 of at most 2 mm by cooling a melamine melt to below the crystallization temperature of the melamine, comprising the formation of a suspension of melamine particles in the cooli... | 04/22/2008 |
| 7357838 | Relaxed silicon germanium substrate with low defect density A method of forming a strained silicon layer on a relaxed, low defect density semiconductor alloy layer such as SiGe is provided. ... | 04/15/2008 |
| 7358122 | High performance FET devices and methods thereof Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched between the gate insulator and a l... | 04/15/2008 |
| 7354815 | Method for fabricating semiconductor devices using strained silicon bearing material A method of manufacturing an integrated circuit on semiconductor substrates. The method includes providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing. The semiconductor substrate has an overlying film of mat... | 04/08/2008 |
| 7341628 | Method to reduce crystal defects particularly in group III-nitride layers and substrates Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium ... | 03/11/2008 |
| 7338554 | Method of synthesising and growing nanorods from a metal carbide on a substrate, substrates thus obtained and applications thereof The invention relates to a process for synthesizing nanorods of a carbide of one metal M1 on a substrate, which comprises: a) the deposition, on the substrate, of a layer of nanocrystals of oxide of the metal M1 and n... | 03/04/2008 |
| 7335283 | Production method for composite oxide thin film and device therefor and composite oxide film produced thereby A method and an apparatus which permits making a composite oxide thin film excellent in crystallinity easily and at a low temperature, with the capability of controlling the basic unit cell structure as desired, and without the need for a post annealing, as well as ... | 02/26/2008 |
| 7332030 | Method of treating a part in order to alter at least one of the properties thereof Process for the treatment of a component, at least one zone to be treated of which located in the depth of this component at a certain distance from the surface thereof, has at least one property that can be modified when this zone is subjected to a thermal energy d... | 02/19/2008 |
| 7332027 | Method for manufacturing aluminum nitride single crystal A method for manufacturing an aluminum nitride single crystal is provided, including the steps of preparing a raw material composition containing aluminum oxide and/or an aluminum oxide precursor which is converted into aluminum oxide by heating, and aluminum nitrid... | 02/19/2008 |
| 7332028 | Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon The invention relates to the handling of a composition comprising a rare-earth halide, especially within the context of the growth of crystals from said composition, said crystals generally being of formula AeLnfX(3f+e) in which Ln r... | 02/19/2008 |
| 7329316 | Manufacturing method for QPM wavelength converter elements, QPM wavelength converter element, and medical laser apparatus using it A manufacturing method for quasi phase matching (QPM) wavelength converter elements using crystal quartz as a base material in which twins are periodically induced, comprises a step of periodically inducing the twins by applying a stress onto a crystal quartz substr... | 02/12/2008 |
| 7316747 | Seeded single crystal silicon carbide growth and resulting crystals A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the co... | 01/08/2008 |
| 7314515 | Apparatus for fabrication of GaN bulk single crystal and fabrication method of GaN single crystal ingot using the same An apparatus for fabricating a GaN single crystal and a fabrication method for producing GaN single crystal ingot are provided. The apparatus includes: a reactor including a ceiling, a floor and a wall with a predetermined height encompassing an internal space betwe... | 01/01/2008 |
| 7309476 | Diamondoid-based components in nanoscale construction Novel diamondoid-based components that may be used in nanoscale construction are disclosed. Such components include rods, brackets, screws, gears, rotors, and impellers. Subassemblies (or subsystems) may comprise one or more diamondoid components. Exemplary subassem... | 12/18/2007 |
| 7309392 | Lithium niobate substrate and method of producing the same In a method of producing a lithium niobate substrate by the use of a lithium niobate crystal grown by the Czochralski process, the lithium niobate crystal is heat-treated at a temperature of from 300° C. or more to less than 500° C. in the state the lithium niobat... | 12/18/2007 |
| 7306673 | Furnace purification and metal fluoride crystal grown in a purified furnace The invention is directed to a method for growing metal fluoride crystals suitable for use in below 200 nm optical lithography systems, the method comprising including at least the step of heating a crystal growth furnace to a temperature in the range of 1400-2000°... | 12/11/2007 |
