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| Number | Title | Issue Date |
| 8114218 | Crucible for a crystal pulling apparatus A single crystal pull apparatus has a multilayer crucible wherein the crucible has an outer crucible, an insertable layer intimately fitted thereon, and a wire frame positioned between the insertable layer and an inner crucible. The insertable layer, wire frame and ... | 02/14/2012 |
| 7727334 | Apparatus for pulling single crystal by CZ method In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon see... | 06/01/2010 |
| 7442255 | Crucible for a device for producing a block of crystalline material and method for producing same The bottom of the crucible has much greater thermal transfer properties, parallel to an axis substantially perpendicular to the bottom, than those of the side walls. The bottom and side walls are formed by materials having the same main chemical constituents. The bo... | 10/28/2008 |
| 7422631 | Mould parts of silicon nitride and method for producing such mould parts The present invention relates to silicon nitride mould parts, particularly crucibles for use in connection with directional solidification and pulling of silicon single crystals. The mould parts consist of Si3N4 having a total open porosity bet... | 09/09/2008 |
| 7413609 | Semiconductor single crystal manufacturing apparatus A semiconductor single crystal manufacturing apparatus capable of lowering the local deterioration of a wire under high temperature atmosphere in the furnace of a chamber, wherein a crucible (24) in which silicon melt (28) is filled is installed in the... | 08/19/2008 |
| 7399360 | Crucible and method of growing single crystal by using crucible Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of ... | 07/15/2008 |
| 7387680 | Method and apparatus for the production of silicon carbide crystals A method and apparatus for growing silicon carbide crystals is provided. The apparatus includes a sublimation chamber with a plurality of spaced apart dividers that can direct the direction of silicon carbide crystal growth into passages between the dividers to form... | 06/17/2008 |
| 7368015 | Apparatus for producing single crystal and quasi-single crystal, and associated method An apparatus including a crucible, an energy source, and a controller is provided. The crucible may be sealed to a nitrogen-containing gas, and may be chemically inert to at least ammonia at a temperature in a range of about 400 degrees Celsius to about 2500 degrees... | 05/06/2008 |
| 7326297 | Device for the production of crystal rods having a defined cross-section and column-shaped polycrystallization structure by means of floating-zone continuous crystallization The invention relates to a device for the production of crystal rods having a defined cross-section and a column-shaped polycrystalline structure by means of floating-zone continuous crystallization, comprising at least one crucible filled with crystalline material,... | 02/05/2008 |
| 7291222 | Systems and methods for measuring and reducing dust in granular material The invention is directed to apparatus and methods for measuring and for reducing dust in granular polysilicon. In one aspect, a system includes a process vessel having a vacuum port for pulling dust from the polysilicon. Another system of the invention includes a b... | 11/06/2007 |
| 7261773 | Melting crucible The invention relates to producing a melt that is as homogeneous as possible, to which fresh material in the form of granulate is continuously supplied. Since the granulate is cooler than the melt, heat sinks form that are especially pronounced when the granulate fo... | 08/28/2007 |
| 7247584 | System and method for selectively increasing surface temperature of an object A system and method for selectively increasing the thermal effect of a radiant energy source to the surface of an object relative to the substrate is described in the context of rapid thermal processing of semiconductor wafers, and apparatus produced therefrom. A ra... | 07/24/2007 |
| 7235133 | Method for growing single crystal of semiconductor By utilizing a crystal pulling apparatus for producing a single crystal according to the Czochralski method comprising at least a crucible to be charged with a raw material, a heater surrounding the crucible, and subsidiary heating means provided below the crucible,... | 06/26/2007 |
| 7235132 | Durable CFC support crucible for high-temperature processes in the pulling of semiconductor single crystals In order to pull semiconductor single crystals by the Czochralski method, quartz glass crucibles are used which require support crucibles having high temperature capabilities. Such support crucibles may be made of various materials, in which case graphite materials,... | 06/26/2007 |
| 7223304 | Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field Methods and system for controlling crystal growth in a Czochralski crystal growing apparatus. A magnetic field is applied within the crystal growing apparatus and varied to control a shape of the melt-solid interface where the ingot is being pulled from the melt. Th... | 05/29/2007 |
| 7172656 | Device and method for measuring position of liquid surface or melt in single-crystal-growing apparatus In a device and a method for measuring the position of the liquid surface of a melt while a single crystal is being pulled, two measuring-lines are defined in an image of a fusion ring which is captured by means of a two-dimensional CCD camera, the intersections of ... | 02/06/2007 |
| 7166845 | Method of enhancing performance of cerium doped lutetium yttrium orthosilicate crystals and crystals produced thereby A method for enhancing the light yield of a single crystal of cerium doped lutetium yttrium orthosilicate (LYSO) in response to irradiation with high energy radiation includes diffusing oxygen into the crystal by heating the crystal for a period of time in an ambien... | 01/23/2007 |
| 7160386 | Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconducto... | 01/09/2007 |
| 7160387 | High purity silica crucible by electrolytic refining, and its production method and pulling method This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li being contained in the depth of 1 mm from the inside surface is less th... | 01/09/2007 |
| 7151261 | Method of enhancing performance of cerium doped lutetium orthosilicate crystals and crystals produced thereby A method for enhancing the light yield of a single crystal of cerium doped lutetium orthosilicate (LSO) in response to irradiation with high energy radiation includes diffusing oxygen into the crystal by heating the crystal for a period of time in an ambient contain... | 12/19/2006 |
| 7132091 | Single crystal silicon ingot having a high arsenic concentration A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.003 Ω·cm. ... | 11/07/2006 |
| 7124036 | Method and system for determining demand in a water distribution system Demand in a water distribution system is determined by the steps of measuring the volume of water flowing into the water distribution system through an input during a predetermined interval of time, measuring the change in the volume of water stored in the storage r... | 10/17/2006 |
| 7071133 | Colored glass compositions and-automotive vision panels with-reduced transmitted-color shift A neutral gray colored glass composition for automotive vision panels having reduced transmitted color shift characteristics is provided. The glass composition has a base portion including 65 to 75 weight percent SiO2, 10 to 20 weight percent Na2 | 07/04/2006 |
| 7067007 | Process and device for growing single crystals The process for growing single crystals, wherein crystal material is melted in a crucible and a crystal nucleus is immersed in the molten crystal material and slowly pulled out, wherein the crystal formed during the pulling is kept at a temperature close to melting ... | 06/27/2006 |
| 7063741 | High pressure high temperature growth of crystalline group III metal nitrides A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III metal selected from the group consisting of aluminum, indium, and galliu... | 06/20/2006 |
| 7060133 | Single crystal pulling apparatus for a metal fluoride A single crystal pulling apparatus for a metal fluoride comprising a crucible provided in a chamber for filling with a molten solution of a single crystal material, a melting heater provided to surround the crucible, a vertically movable single crystal pulling bar f... | 06/13/2006 |
| 7052547 | Apparatus for supplying raw material In single crystal growth by means of a CZ method, a granular/lump polycrystalline raw material is additionally supplied into a raw material melt in a crucible through a vertical charging tube. A raw material accumulating section is provided at a site part way downwa... | 05/30/2006 |
| 7022180 | Method and apparatus for growing multiple crystalline ribbons from a single crucible Methods and apparatus for concurrent growth of multiple crystalline ribbons from a single crucible employ meniscus shapers to facilitate continuous growth of discrete and substantially flat crystalline ribbons having controlled width. ... | 04/04/2006 |
| 7001456 | Apparatus and method for supplying Crystalline materials in czochralski method In supplying crystalline materials in the Czochralski method, it is made use of an apparatus equipped with an inner vessel having an opening portion at the lower part or bottom thereof, which is to be charged with a granular solid material, an outer vessel containin... | 02/21/2006 |
| 6984264 | Single crystal pulling device and method and superconducting magnet A single crystal pulling device is composed of a cylindrical pulling furnace, a crucible disposed in the pulling furnace in which a single crystal material for a semiconductor is poured, a cylindrical vacuum vessel coaxially disposed around the pulling furnace, and ... | 01/10/2006 |
| 6984263 | Shallow melt apparatus for semicontinuous czochralski crystal growth In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible... | 01/10/2006 |
| 6946030 | Method for the production of a silica glass crucible with crystalline regions from a porous silica glass green body A silica glass crucible is produced by a) providing a porous amorphous silica glass green body, which is infiltrated with at least one substance that promotes crystallization of a silica glass crucible, b) drying t... | 09/20/2005 |
| 6942733 | Fluid sealing system for a crystal puller A fluid sealing system is provided for use in a crystal puller for growing a monocrystalline ingot. The crystal puller has a housing, a fluid flow path contained in the housing, and a fluid passage through a wall of the housing for passage of fluid. The fluid sealin... | 09/13/2005 |
| 6916370 | Quartz glass crucible for pulling up silicon single crystal and method for producing the same An object of the invention is to provide a quartz glass crucible for pulling up silicon single crystal and a method for producing the same, suitable for improving the productivity of the crucible and the quality of the silicon single crystal, which, by forming a cry... | 07/12/2005 |
| 6899760 | Silicon single crystal growing furnace supplemented with low melting point dopant feeding instrument and the low melting point dopant feeding method thereof A silicon single crystal growing apparatus supplemented with a low melting point dopant feeding instrument and a low melting point dopant feeding method thereof for producing a heavily doped silicon single crystal with a dopant of low melting point. The apparatus in... | 05/31/2005 |
| 6843849 | Method and apparatus for growing high quality single crystal In a method for growing a single crystal by bringing a seed crystal (4) into contact with a melt (2) of raw materials melted under heating in a crucible (1) a blade member (5) or a baffle member in disposed in the raw material melt (2 | 01/18/2005 |
| 6814802 | Method and apparatus for growing multiple crystalline ribbons from a single crucible Methods and apparatus for concurrent growth of multiple crystalline ribbons from a single crucible employ meniscus shapers to facilitate continuous growth of discrete and substantially flat crystalline ribbons having controlled width. ... | 11/09/2004 |
| 6797061 | Quartz glass crucible for pulling up silicon single crystal and production method therefor Provided are a quartz glass crucible for pulling up a silicon single crystal, with which not only a defectless silicon single crystal can be pulled but a single crystallization ratio can greatly be improved and a production method therefor. The quartz glass crucible... | 09/28/2004 |
| 6770132 | Method for pressurized annealing of lithium niobate and resulting lithium niobate structures In one aspect of the invention, a method for pressurized annealing of lithium niobate or lithium tantalate structures, such as optical modulators and optical wave guides, comprises pressurizing an oxygen atmosphere containing a lithium niobate or lithium tantalate s... | 08/03/2004 |
| 6743293 | Cruicible and growth method for polycrystal silicon using same A crucible used in the growth of polycrystal silicon by a cast method comprises a crucible body for, when solid material silicon is melted, containing the melted material silicon, and a material holder provided on the crucible body, for holding further material sili... | 06/01/2004 |
