Quotables
"The man with a new idea is a crank until the idea succeeds."
Samuel Clemens
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8043428 | Process for production of silicon single crystal In growing a silicon monocrystal from a silicon melt added with an N-type dopant by Czochralski method, the monocrystal is grown such that a relationship represented by a formula (1) as follows is satisfied. In the formula (1): a dopant concentration in the silicon ... | 10/25/2011 |
| 7780782 | Method and apparatus for growing a ribbon crystal with localized cooling A method of growing ribbon crystal provides a crucible containing molten material, and passes at least two strings through the molten material to produce a partially formed ribbon crystal. The method then directs a fluid to a given portion of the partially formed ri... | 08/24/2010 |
| 7361401 | Surface coverings containing fused recycled material and processes of making the same A backing or an intermediate layer for a surface covering is described which comprises a fused recycled material, wherein the material comprises a thermoplastic material, for instance, a vinyl material from a vinyl backed carpet or vinyl backed carpet manufacturing ... | 04/22/2008 |
| 7329317 | Method for producing silicon wafer The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 an... | 02/12/2008 |
| 7316746 | Crystals for a semiconductor radiation detector and method for making the crystals A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone... | 01/08/2008 |
| 7291222 | Systems and methods for measuring and reducing dust in granular material The invention is directed to apparatus and methods for measuring and for reducing dust in granular polysilicon. In one aspect, a system includes a process vessel having a vacuum port for pulling dust from the polysilicon. Another system of the invention includes a b... | 11/06/2007 |
| 7182809 | Nitrogen-doped silicon substantially free of oxidation induced stacking faults A single crystal silicon, ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect, is substantially free of oxidation induced stacking faults and is nitrogen doped to stabilize oxygen precipitatio... | 02/27/2007 |
| 7147894 | Method for assembling nano objects A method for the self assembly of a macroscopic structure with a pre-formed nano object is provided. The method includes processing a nano object to a desired aspect ratio and chemical functionality and mixing the processed nano object with a solvent to form a suspe... | 12/12/2006 |
| 7001455 | Method and apparatus for doping semiconductors Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles t... | 02/21/2006 |
| 6946185 | Use of collapsible microspheres to create texture in surface coverings Surface coverings and surface covering components that include a textured transparent or translucent wear layer and a design layer, where the design layer is printed with an ink that includes collapsible microspheres, are disclosed. Also disclosed are methods of man... | 09/20/2005 |
| 6936201 | Surface coverings containing fused recycled material and processes of making the same A backing or an intermediate layer for a surface covering is described which comprises a fused recycled material, wherein the material comprises a thermoplastic material, for instance, a vinyl material from a vinyl backed carpet or vinyl backed carpet manufacturing ... | 08/30/2005 |
| 6802899 | Silicon single crystal wafer and manufacturing process therefor There is provided a manufacturing process for a CZ silicon single crystal wafer which is subjected to heat treatment wherein slip resistance of a portion of the CZ silicon single crystal wafer in contact with a heat treatment boat is improved with extreme simplicity... | 10/12/2004 |
| 6491752 | Enhanced n-type silicon material for epitaxial wafer substrate and method of making same An enhanced n+ silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n+ epitaxial wafers based on these substrates. The method fo... | 12/10/2002 |
| 6478883 | Silicon single crystal wafer, epitaxial silicon wafer, and methods for producing them A silicon wafer for epitaxial growth consisting of a highly boron-doped silicon single crystal wafer, an antimony-doped silicon single crystal wafer or a phosphorus-doped silicon single crystal wafer, which allows easy oxygen precipitation and exhibits hi... | 11/12/2002 |
| 6387466 | Single-crystal silicon wafer The high quality silicon wafer of large diameter is invented by mainly paying attention to the particles ascribed to the crystal and the wafer is optimal for manufacturing ultra highly integrated devices. The silicon wafer is of diameter of 300 mm and lar... | 05/14/2002 |
| 6254674 | Method of controllably delivering dopant by limiting the release rate of dopant from a submerged vessel A time-released dopant delivery system and method are provided in a Czochralski-type crystal-growing furnace to enable continuous doping of the melt over time. The dopant delivery system and method adjusts dopant levels within the melt as a function of ti... | 07/03/2001 |
| 6059875 | Method of effecting nitrogen doping in Czochralski grown silicon crystal A method of introducing nitrogen into a melt for use in producing a nitrogen-doped silicon single crystal by the Czochralski method includes adding a silicon material to a vessel, such as a quartz crucible, adding a nitrogen-containing powder, preferably ... | 05/09/2000 |
| 6059876 | Method and apparatus for growing crystals the present invention provides an improved method and apparatus for doping silicon and other crystals made by the Czochralski process wherein the surface of the melt is partially enclosed or covered in order to capture the dopant vapors and improve the ef... | 05/09/2000 |
| 5986288 | Epitaxial wafer for a light-emitting diode and a light-emitting diode An epitaxial wafer for a light-emitting diode includes an n-type GaP single-crystal substrate, and at least an n-type semiconductor epitaxial layer and a p-type semiconductor epitaxial layer formed on the substrate. The substrate has a boron concentration... | 11/16/1999 |
| 5733805 | Method of fabricating semiconductor device utilizing a GaAs single crystal By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, ther... | 03/31/1998 |
| 5567505 | Means and method of applying a plastic finishing layer to the surface of a composite article; coated composite article Means for applying a plastic finishing layer to the surface of a composite article comprising an extruded plastic-based solid body reinforced by one or more bundles of reinforcing fibers, these bundles being affixed to its surface, comprising a ring (1), ... | 10/22/1996 |
| 5515810 | Method and apparatus for manufacturing semi-insulation GaAs monocrystal To manufacture a low-carbon concentration GaAs wafer required for devices such as hall sensors, FETs, HEMTs etc. at a high production yield without deteriorating the semi-insulation characteristics thereof, a method of manufacturing a semi-insulation GaAs... | 05/14/1996 |
| 5415125 | Method of forming a semiconductor boule A method of forming a semiconductor boule comprises the steps of providing a chamber having a crucible therein; introducing a first material and a second material into the crucible, the second material overlying the first material; heating the crucible to... | 05/16/1995 |
| 5406905 | Cast dopant for crystal growing A dopant (76), such as antimony, is cast around a seed crystal (10) to form a seed-dopant assembly (14) that facilitates doping of a molten semiconductor (36), such as silicon, in a crystal-growing furnace (34). To grow a doped ingot, the seed-dopant asse... | 04/18/1995 |
| 5402747 | Method of growing crystal A single crystal material is filled in a crucible, and the whole of the single crystal material is melted to contain doping impurities. A solid layer coagulated upward from the bottom of the crucible is rendered to coexist with a melted layer over the sol... | 04/04/1995 |
| 5340434 | Process for producing silicon single crystal A process for producing a silicon single crystal is disclosed which comprises the steps of providing a silicon melt in a crucible, feeding grains of silicon polycrystal to the silicon melt and pulling up a silicon single crystal from the silicon melt. The... | 08/23/1994 |
| 5242531 | Continuous liquid silicon recharging process in Czochralski crucible pulling In the Czochralski crucible pulling of crystal ingots, in particular those of silicon and having particularly large crystal diameters, the degree of filling of the crucible is kept approximately constant during the pulling process by continuously adding s... | 09/07/1993 |
| 5186784 | Process for improved doping of semiconductor crystals Doping of IIIB-VB semiconductor crystals grown by the liquid encapsulated Cyochralski techniques is improved by introducing a metal to the crucible. The metal is characterized as having a lower melting temperature and a lower free energy of oxide formatio... | 02/16/1993 |
| 5156978 | Method of fabricating solar cells A method and apparatus for producing crystalline substrate for use in fabricating solid state electronic devices. A hollow crystalline body is grown from a melt containing a dopant and a P-N junction is formed in said crystalline body as it is being grown... | 10/20/1992 |
| 5152867 | Apparatus and method for producing silicon single crystal An apparatus and a method for producing a silicon single crystal by the Czochralski method, whereby the silicon single crystal is pulled up from a crucible while the crucible is heated by a side heater in the lateral periphery of the crucible and a bottom... | 10/06/1992 |
| 5129986 | Method for controlling specific resistance of single crystal and an apparatus therefor A method for controlling a specific resistance of a single crystal in a Czochralski-method type single crystal pulling apparatus having a hermetical chamber in which the single crystal is pulled up from a polycrystal melt and an inert gas supply and exhau... | 07/14/1992 |
| 5073229 | Semiconductor crystal pulling method A crystal pulling method includes the steps of disposing a separation wall concentrically with an in a semiconductor crystal pulling crucible to divide the crucible into an inner chamber and an outer chamber, putting first doped material melt into the inn... | 12/17/1991 |
| 5041186 | Method for manufacturing compound semiconductor single crystals using a hydrogen monitor gas Disclosed is a method of manufacturing a compound semiconductor single crystal, wherein a container containing a raw melt is placed in an atmosphere containing at least one monitor gas selected from the group consisting of hydrogen, oxygen, carbon monoxid... | 08/20/1991 |
| 5034200 | Crystal pulling apparatus and crystal pulling method A crystal pulling apparatus of double structure crucible has a crucible body which is divided into inner and outer chambers by a cylindrical partition wall coaxially disposed in the crucible body. A melt supplying path used to supply melt from the outer c... | 07/23/1991 |
| 4927489 | Method for doping a melt A method for doping a silicon melt for growing silicon dendritic web crystals is disclosed. The melt is doped with antimony prior to commencing web growth, which allows the crystals to be grown without the need for replenishing the dopant, and producing c... | 05/22/1990 |
| 4911780 | LEC method for growing a single crystal of compound semiconductors If the distribution coefficient of an impurity in a compound melt is less than 1, the impurity concentration in the compound melt doped with the impurity increased during a crystal growth in an LEC method. A supplying device replenishes an undoped crystal... | 03/27/1990 |
| 4846927 | Czochralski method for single crystal growing of a compound semiconductor The invention provides a method of high productivity for the preparation of a substantially dislocation-free single crystal of a compound semiconductor such as gallium arsenide by the liquid-encapsulated Czochralski method. The improvement provided by the... | 07/11/1989 |
| 4722764 | Method for the manufacture of dislocation-free monocrystalline silicon rods A method for crucible-free zone pulling of silicon monocrystalline rods is described. According to the invention, a polycrystalline silicon rod obtained by crucible pulling according to the Czochralski procedure is used in lieu of the polycrystalline sili... | 02/02/1988 |
| 4708764 | Method of and apparatus for growing crystals A complex relative movement in a direction transverse to the crystal draw direction is imparted at the interface between the growing crystal bar and a melt of the crystallizable material by controlled electrical energization of a radial stabilizer acting... | 11/24/1987 |
| 4678534 | Method for growing a single crystal A modified liquid encapsulated Czockralski method for growing a single crystal of compound semiconductor is disclosed. This method uses two vessels. An inner vessel is filled with an inactive gas, a gas of an element of group V and optionally an impurity ... | 07/07/1987 |
