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| Number | Title | Issue Date |
| 8101021 | Flow method and reactor for manufacturing nanocrystals A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a segmented-flow method. ... | 01/24/2012 |
| 7449066 | Apparatus for fabrication of GaN bulk single crystal and fabrication method of GaN single crystal ingot using the same An apparatus for fabricating a GaN single crystal and a fabrication method for producing GaN single crystal ingot are provided. The apparatus includes: a reactor including a ceiling, a floor and a wall with a predetermined height encompassing an internal space betwe... | 11/11/2008 |
| 7439116 | Apparatus and method for forming polycrystalline silicon thin film Apparatus and method for forming a polycrystalline silicon thin film by converting an amorphous silicon thin film into the polycrystalline silicon thin film using a metal are provided. The method includes: a metal nucleus adsorbing step of introducing a vapor phase ... | 10/21/2008 |
| 7435295 | Method for producing compound single crystal and production apparatus for use therein The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal i... | 10/14/2008 |
| 7431768 | System for performing crystallization trials A crystallization system is provided comprising: a screen replicator configured to transfer screen solutions from wells of a screen storage plate into well regions of multiple crystallization plates; a trial generation station configured to generate crystallization ... | 10/07/2008 |
| 7431769 | Method for performing crystallization trials A method is provided that comprises generating a screen storage plate that contains screen solutions at a screen generation station; employing a transport mechanism to transport the screen storage plate from the screen generation station to a screen storage station;... | 10/07/2008 |
| 7413718 | Reaction apparatus for producing silicon A silicon production reactor including a reaction vessel and heating element, the reaction vessel has a vertically extending wall and a space surrounded by the wall, the heating element being capable of heating at least a part, including lower end portion, of the wa... | 08/19/2008 |
| 7396411 | Apparatus for manufacturing single crystal A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a c... | 07/08/2008 |
| 7351286 | One hundred millimeter single crystal silicon carbide wafer A method of producing a high quality bulk single crystal of silicon carbide in a seeded growth system is disclosed. The method includes positioning the seed crystal in a crucible while exerting minimal torsional forces on the seed crystal to thereby prevent torsiona... | 04/01/2008 |
| 7344596 | System and method for crystal growing To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucib... | 03/18/2008 |
| 7335261 | Apparatus for forming a semiconductor thin film Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an ... | 02/26/2008 |
| 7314519 | Vapor-phase epitaxial apparatus and vapor phase epitaxial method A vapor-phase growth apparatus including a reaction furnace, a wafer container disposed in said furnace, a gas supply member, and a heating member, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying a source gas in a ... | 01/01/2008 |
| 7291565 | Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid A method and system is described for treating a substrate with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry comprises fl... | 11/06/2007 |
| 7270137 | Apparatus and method of securing a workpiece during high-pressure processing An apparatus is disclosed for performing high-pressure processing of a workpiece having a top face and a bottom face. The apparatus comprises a processing chamber and a holder for securing the workpiece within the processing chamber so that a substantial portion of ... | 09/18/2007 |
| 7255772 | High pressure processing chamber for semiconductor substrate A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical... | 08/14/2007 |
| 7250374 | System and method for processing a substrate using supercritical carbon dioxide processing A method and system for processing a substrate in a film removal system. The method includes providing the substrate in a substrate chamber of a film removal system, where the substrate has a micro-feature containing a dielectric film on a sidewall of the micro-feat... | 07/31/2007 |
| 7193620 | Wireless device lighting system A wireless device lighting system provides backlighting of a display (104) and/or a user interface (1526) of a wireless device (100). A user interface (1526) includes a plurality of buttons (112) for entering information and at lea... | 03/20/2007 |
| 7175801 | Method for producing a porous titanium material article Method for producing a porous titanium material for example a support. Starting from a titanium powder this powder is sintered under vacuum conditions in an inert/reducing atmosphere. Titanium hydride is added as powder and decomposes during sintering. The hydride i... | 02/13/2007 |
| 7175707 | P-type GaAs single crystal and its production method A p-type GaAs single crystal containing Si, Zn, B and In as dopants has an average dislocation density of 100 cm−2 or less. It may be produced by cooling a GaAs melt containing Si, Zn, B and In as dopants in a crystal-growing container having a seed cry... | 02/13/2007 |
| 7175880 | Surface treatment system and method A surface treatment system in which gas for a deposition reaction is injected into a deposition chamber and power is applied to form a deposition reaction to form a deposition layer at a surface of an object or surface treatment, wherein the deposition chamber has a... | 02/13/2007 |
| 7140393 | Non-contact shuttle valve for flow diversion in high pressure systems A valve for redirecting flow in a supercritical fluid or other high pressure processing system is disclosed. In high pressure supercritical carbon dioxide (SCCO2) equipment for semiconductor wafer processing, a major hurtle in providing clean equipment and clean waf... | 11/28/2006 |
| 7135072 | Methods of fabricating silicon carbide crystals Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed... | 11/14/2006 |
| 7112241 | Protein crystallography hanging drop multiwell plate The present invention includes a microplate for performing crystallography studies. In particular, the microplate has a frame that includes a plurality of wells formed therein. Each well includes a first well and a second well. The first well includes a relatively l... | 09/26/2006 |
| 7105049 | Method of manufacturing single crystal calcium fluoride A method for manufacturing calcium fluoride single crystal includes the step of cooling the calcium fluoride single crystal so that maximum shear stress inside the calcium fluoride single crystal caused by thermal stress is approximately equal to or smaller than cri... | 09/12/2006 |
| 7097709 | Laser annealing apparatus A laser annealing apparatus for crystallizing a semiconductor film with a linearly radiating laser beam including a laser oscillator and laser optical systems for forming a laser beam radiated from the laser oscillator linearly, for application to a semiconductor fi... | 08/29/2006 |
| 7077917 | High-pressure processing chamber for a semiconductor wafer A processing chamber having an improved sealing means is disclosed. The processing chamber comprises a lower element, an upper element, and a sealing means that tightly holds the lower element to the upper element to define a processing volume that is maintained usi... | 07/18/2006 |
| 7060422 | Method of supercritical processing of a workpiece An apparatus for supercritical processing and non-supercritical processing of a workpiece comprises a transfer module, a supercritical processing module, a non-supercritical processing module, and a robot. The transfer module includes an entrance. The supercritical ... | 06/13/2006 |
| 7021635 | Vacuum chuck utilizing sintered material and method of providing thereof A vacuum chuck for holding a semiconductor wafer during high pressure, preferably supercritical, processing comprising: a wafer holding region for holding the wafer; a vacuum region for applying vacuum to a surface of the wafer, the vacuum region within the wafer ho... | 04/04/2006 |
| 7019266 | Substantially-uniform-temperature annealing A method of heating an optical member includes providing the optical member, directing heat from a heat source toward the optical member, and distributing the heat about the optical member through a high-thermal-conductivity apparatus disposed between the heat sourc... | 03/28/2006 |
| 7001468 | Pressure energized pressure vessel opening and closing device and method of providing therefor A closure assembly coupled to a vessel including a chamber and an access port in communication with the chamber, the closure assembly comprising: a door assembly coupled to the vessel and configured to move between an open position and a closed position, the door as... | 02/21/2006 |
| 6938815 | Heat-resistant electronic systems and circuit boards Methods of making improved electronic systems and circuits boards, and more specifically to methods of making improved electronic systems and circuits boards using heat-resistant composite materials having superior mechanical, thermal, and electrical properties.... | 09/06/2005 |
| 6926012 | Method for supercritical processing of multiple workpieces An apparatus for supercritical processing of multiple workpieces comprises a transfer module, first and second supercritical processing modules, and a robot. The transfer module includes an entrance. The first and second supercritical processing modules are coupled ... | 08/09/2005 |
| 6926798 | Apparatus for supercritical processing of a workpiece An apparatus for supercritical processing and non-supercritical processing of a workpiece comprises a transfer module, a supercritical processing module, a non-supercritical processing module, and a robot. The transfer module includes an entrance. The supercritical ... | 08/09/2005 |
| 6921456 | High pressure processing chamber for semiconductor substrate A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical... | 07/26/2005 |
| 6919539 | Substantially-uniform-temperature annealing A system for heating optical members includes a thermally-conductive inner housing defining an interior volume for receiving an optical member to be heated, a thermally-insulative outer housing at least partially containing the thermally-conductive inner housing, an... | 07/19/2005 |
| 6875275 | Production apparatus for producing a crystal A production apparatus for producing a crystal includes a crucible divided into a plurality of stages, each stage containing a crystal precursor material, and a heater arranged to heat the crucible. The crucible has formed therein a degassing hole in a side wall por... | 04/05/2005 |
| 6861144 | Polycrystalline silicon and process and apparatus for producing the same Foamed polycrystalline silicon having bubbles therein and an apparent density of 2.20 g/cm3 or less. This silicon generates an extremely small amount of fine grains by crushing and can be easily crushed. There is also provided a method of producing foamed... | 03/01/2005 |
| 6841210 | Multilayer structured quartz glass crucible and method for producing the same Disclosed is a multilayer structured quartz glass crucible, for pulling up silicon single crystal, whose structure has at least three layers comprising: a translucent outer layer made of naturally occurring quartz glass and having a large number of pores, a transluc... | 01/11/2005 |
| 6824609 | Liquid phase growth method and liquid phase growth apparatus A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flo... | 11/30/2004 |
| 6758902 | Heater arrangement for crystal growth furnace A furnace for growing a high volume of crystals includes a plurality of individual growth stations and first and second heater matrixes. Each individual growth station has a crucible and an insulating container generally surrounding the crucible and thermally isolat... | 07/06/2004 |
