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| Number | Title | Issue Date |
| 8062423 | Crystal-growing furnace with convectional cooling structure A crystal-growing furnace with a convectional cooling structure includes a furnace body, a heating room, and at least one heater. The heating room is accommodated in the furnace body, and includes an upper partition, a plurality of side partitions, and a lower parti... | 11/22/2011 |
| 8012258 | Melt surface position monitoring apparatus in silicon single crystal growth process The liquid surface position of the melt in the crucible in the silicon single crystal growth process utilizing the Czochralski method is monitored using the melt surface position on the occasion of seeding as a reference position and an estimated melt surface positi... | 09/06/2011 |
| 7655091 | Formation of single-crystal silicon carbide The invention concerns a device (10) for forming in single-crystal state a compound body with incongruent evaporation, capable of being in monocrystalline or polycrystalline form, comprising at least one first chamber (20) containing a substrate (42... | 02/02/2010 |
| 7431764 | Method for pulling up single crystal The axial temperature gradient G at the vicinity of the solid-liquid interface 24 in an ingot is calculated in consideration of the heating value of a heater 18, the dimensions and physical property values of furnace inside components and the convectio... | 10/07/2008 |
| 7431768 | System for performing crystallization trials A crystallization system is provided comprising: a screen replicator configured to transfer screen solutions from wells of a screen storage plate into well regions of multiple crystallization plates; a trial generation station configured to generate crystallization ... | 10/07/2008 |
| 7416708 | Method of measuring protein solubility, process for producing crystal and apparatus therefor Efficient measuring of protein solubility with the use of a precipitating agent as crystallization parameter; and production of a high-quality protein crystal with the use of a solubility curve obtained by the measuring. Protein crystal is disposed, and the surround... | 08/26/2008 |
| 7413605 | Method for manufacturing silicon single crystal By pulling up an ingot in consideration of deformation of a crucible, generation of the defective ingot is prevented and a plurality of ingots having equivalent quality with the first ingot are pulled up in a multiple pull-up. Firstly, a deformation amount of a cruc... | 08/19/2008 |
| 7402207 | Method and apparatus for controlling the thickness of a selective epitaxial growth layer Methods and systems for permitting thickness control of the selective epitaxial growth (SEG) layer in a semiconductor manufacturing process, for example raised source/drain applications in CMOS technologies, are presented. These methods and systems provide the capab... | 07/22/2008 |
| 7344596 | System and method for crystal growing To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucib... | 03/18/2008 |
| 7335261 | Apparatus for forming a semiconductor thin film Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an ... | 02/26/2008 |
| 7332029 | Crystal forming apparatus and method for using same A crystal forming apparatus and method for using the apparatus, the method including depositing a precipitant solution in a site, incubating the site, during which time volatile vapor evaporates from the precipitant solution and accumulates in the site, and pumping ... | 02/19/2008 |
| 7332032 | Precursor mixtures for use in preparing layers on substrates Methods of forming a layer on a substrate using complexes of Formula I. The complexes and methods are particularly suitable for the preparation of semiconductor structures. The complexes are of the formula LyMYz (Formula I) wherein: M is a meta... | 02/19/2008 |
| 7326292 | Quality evaluation method for single crystal ingot The inventive quality evaluation method for a single crystal ingot generally includes a step of determining cropping and sampling positions and a step of evaluating a sample. The step of determining cropping and sampling positions includes: (a) inputting basic infor... | 02/05/2008 |
| 7318865 | Crystallization apparatus and method; manufacturing method of electronic device, electronic device, and optical modulation element A manufacturing method of an electronic device includes positioning a processed substrate with respect to a substrate stage of a crystallization apparatus and supporting it with at least one positioning mark previously provided on the processed substrate being used ... | 01/15/2008 |
| 7318866 | Systems and methods for inducing crystallization of thin films using multiple optical paths The present invention is directed to systems and methods for irradiating regions of a thin film sample(s) with laser beam pulses having different energy beam characteristics that are generated and delivered via different optical paths. Exemplary methods include the ... | 01/15/2008 |
| 7314519 | Vapor-phase epitaxial apparatus and vapor phase epitaxial method A vapor-phase growth apparatus including a reaction furnace, a wafer container disposed in said furnace, a gas supply member, and a heating member, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying a source gas in a ... | 01/01/2008 |
| 7300520 | Crystallization reagent matrices and related methods and kits This invention provides methods, kits and automated systems for identifying a reagent in which a compound crystallizes, and methods for crystallizing a compound. ... | 11/27/2007 |
| 7294197 | Formation of a silicon sheet by cold surface casting Metallurgical grade silicon or high purity silicon beads developed from a fluidized bed process are melted in a cooled aluminum crucible, such that a non wetted interface is created between the molten silicon and a cooled supporting substrate that includes a surface... | 11/13/2007 |
| 7285168 | Method and apparatus for the measurement, orientation and fixation of at least one single crystal For the measurement, orientation and fixation of at least one single crystal, it is the object of the invention to ensure increased accuracy in the determination of crystallographic orientation and oriented fixation regardless of the outer geometry of the single cry... | 10/23/2007 |
| 7282094 | Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal To precisely predict the distribution of densities and sizes of void defects comprising voids and inner wall oxide membranes in a single crystal. The computer-based simulation determines, at steps 1 to 7, the distribution of temperatures within a singl... | 10/16/2007 |
| 7270709 | Method and apparatus of generating PDMAT precursor A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include... | 09/18/2007 |
| 7264674 | Method for pulling a single crystal An apparatus is used to pull a single crystal, wherein a flow of an inert gas to the single crystal to be grown, a pressure in an apparatus body, and a temperature environment are always kept constant by keeping a melt level at a prescribed position in spite of chan... | 09/04/2007 |
| 7247812 | Laser annealing apparatus An excimer laser annealing apparatus and the application of the same for stabilizing the atmosphere surrounding an area irradiated by an excimer laser. The apparatus includes a chamber, a gas diversion nozzle, an excimer laser and a gas supply device. The gas divers... | 07/24/2007 |
| 7244306 | Method for measuring point defect distribution of silicon single crystal ingot A single crystal ingot is cut to an axial direction so as to including the central axis, a sample for measurement including regions [V], [Pv], [Pi] and [I] is prepared, and a first sample and second sample are prepared by dividing the sample into two so as to be sym... | 07/17/2007 |
| 7217319 | Crystallization apparatus and crystallization method A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity di... | 05/15/2007 |
| 7214270 | Crystallization apparatus, crystallization method, device and phase modulation element The present invention comprises a light modulation optical system having a first element which forms a desired light intensity gradient distribution to an incident light beam and a second element which forms a desired light intensity minimum distribution with an inv... | 05/08/2007 |
| 7211145 | Substrate processing apparatus and substrate processing method A substrate processing apparatus include a spin chuck capable of holding a semiconductor wafer in a horizontal position, a drive motor for driving the spin chuck for rotation, and a processing vessel accommodating the spin chuck and the drive motor 50 therein... | 05/01/2007 |
| 7195670 | High throughput screening of crystallization of materials High throughput screening of crystallization of a target material is accomplished by simultaneously introducing a solution of the target material into a plurality of chambers of a microfabricated fluidic device. The microfabricated fluidic device is then manipulated... | 03/27/2007 |
| 7179331 | Crystal growing equipment The invention presented here relates to a crystal growing equipment. It is equipped in general with a resistance heater for heating a melt (13) as well as with field coils, which generate alternating magnetic field in a crucible, with which flows can be induc... | 02/20/2007 |
| 7135074 | Method for manufacturing silicon carbide single crystal from dislocation control seed crystal A method for manufacturing a silicon carbide single crystal includes the steps of: preparing a seed crystal with a screw dislocation generation region; and growing the single crystal on a growth surface of the seed crystal. The generation region occupies equal to or... | 11/14/2006 |
| 7125452 | Process for calibrating the temperature control unit of an oven and oven for carrying out this process A process for calibrating the temperature control unit of a vertical gradient freeze crystal growth oven, instead of the fused material a test body (3) is used in the oven (1) that does not melt at the oven temperature, that has a heat conductivity com... | 10/24/2006 |
| 7119878 | Exposure apparatus and method of cleaning optical element of the same An exposure apparatus for exposing a substrate to a pattern of a mask by use of exposure light. The apparatus includes an optical system for directing the exposure light from a light source to the substrate, the optical system having an optical element, a first casi... | 10/10/2006 |
| 7105048 | Laser irradiation apparatus Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is cryst... | 09/12/2006 |
| 7101436 | Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display A crystallization apparatus includes an optical illumination system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an inverse peak type light intensity distribution including a minimum light intensity i... | 09/05/2006 |
| 7097709 | Laser annealing apparatus A laser annealing apparatus for crystallizing a semiconductor film with a linearly radiating laser beam including a laser oscillator and laser optical systems for forming a laser beam radiated from the laser oscillator linearly, for application to a semiconductor fi... | 08/29/2006 |
| 7074271 | Method of identifying defect distribution in silicon single crystal ingot A surface of a reference sample is contaminated with a transition metal, and a heat treatment is performed to diffuse the transition metal in the sample. A concentration of recombination centers formed by the transition metal is measured in the entire heat-treated r... | 07/11/2006 |
| 7052545 | High throughput screening of crystallization of materials High throughput screening of crystallization of a target material is accomplished by simultaneously introducing a solution of the target material into a plurality of chambers of a microfabricated fluidic device. The microfabricated fluidic device is then manipulated... | 05/30/2006 |
| 7033439 | Apparatus for fabricating a III-V nitride film and a method for fabricating the same A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III–V nitrid... | 04/25/2006 |
| 7033070 | Method and apparatus for measuring temperature Temperature of molten silicon 1 in an infrared image furnace 2 including a halogen lamp 8 as a heating source to grow a single crystal of silicon in a floating-zone method is measured with high precision according to light radiated from the molt... | 04/25/2006 |
| 7025828 | Screening for optimal yield in the crystallization of multicomponent systems A method of determining the optimal yield of a target compound includes the steps of: (a) determining the initial composition of a mixture of compounds containing the target compound; (b) dissolving the mixture in ... | 04/11/2006 |
